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41. 发明授权

US06312865B1 Semiconductor device using polymer-containing photoresist, and process for manufacturing the same 失效
标题翻译：使用含聚合物的光致抗蚀剂的半导体装置及其制造方法
公开(公告)号：US06312865B1
公开(公告)日：2001-11-06
申请号：US09223510
申请日：1998-12-30
申请人： Min Ho Jung , Jae Chang Jung , Cheol Kyu Bok , Ki Ho Baik
发明人： Min Ho Jung , Jae Chang Jung , Cheol Kyu Bok , Ki Ho Baik
IPC分类号： G03F739
CPC分类号： C08F232/08 , C07C67/347 , C07C69/753 , C08F222/06
摘要： The present invention relates to a semiconductor device using a copolymer-containing photoresist, and a process for manufacturing the same. As a norbornene derivative (monomer) having a hydrophilic group is synthesized and introduced to the backbone chain of a polymer, the polymer according to the present invention has excellent etching resistance and heat resistance, which are the characteristic points of alicyclic olefin structure, and provide excellent resolution due to prominent enhancement of adhesiveness resulted from introducing a hydrophilic group (—OH).
摘要翻译：本发明涉及使用含共聚物的光致抗蚀剂的半导体器件及其制造方法。作为具有亲水基团的降冰片烯衍生物（单体）合成并引入到聚合物的主链中，本发明的聚合物具有优异的耐蚀性和耐热性，这是脂环式烯烃结构的特征点，并提供由于引入亲水基团（-OH）导致的粘附性显着增强，因而具有优异的分辨率。

42. 发明授权

US06632903B2 Polymer-containing photoresist, and process for manufacturing the same 有权
标题翻译：含聚合物的光致抗蚀剂及其制造方法
公开(公告)号：US06632903B2
公开(公告)日：2003-10-14
申请号：US09934369
申请日：2001-08-21
申请人： Min Ho Jung , Jae Chang Jung , Cheol Kyu Bok , Ki Ho Baik
发明人： Min Ho Jung , Jae Chang Jung , Cheol Kyu Bok , Ki Ho Baik
IPC分类号： C08F23200
CPC分类号： C08F232/08 , C07C67/347 , C07C69/753 , C08F222/06
摘要： The present invention relates to a semiconductor device using a copolymer-containing photoresist, and a process for manufacturing the same. As a norbornene derivative (monomer) having a hydrophilic group is synthesized and introduced to the backbone chain of a polymer, the polymer according to the present invention has excellent etching resistance and heat resistance, which are the characteristic points of alicyclic olefin structure, and provide excellent resolution due to prominent enhancement of adhesiveness resulted from introducing a hydrophilic group (—OH).
摘要翻译：本发明涉及使用含共聚物的光致抗蚀剂的半导体器件及其制造方法。作为具有亲水基团的降冰片烯衍生物（单体）合成并引入到聚合物的主链中，本发明的聚合物具有优异的耐蚀性和耐热性，这是脂环式烯烃结构的特征点，并提供由于引入亲水基团（-OH）导致的粘合性的显着增强，优异的分辨率

43. 发明授权

US06369181B1 Copolymer resin, preparation thereof, and photoresist using the same 有权
标题翻译：共聚物树脂及其制备方法和使用其的光致抗蚀剂
公开(公告)号：US06369181B1
公开(公告)日：2002-04-09
申请号：US09222053
申请日：1998-12-29
申请人： Min Ho Jung , Jae Chang Jung , Cheol Kyu Bok , Ki Ho Baik
发明人： Min Ho Jung , Jae Chang Jung , Cheol Kyu Bok , Ki Ho Baik
IPC分类号： C08F3208
CPC分类号： C08F232/08 , C08F222/06 , G03F7/0045 , G03F7/039 , Y10S430/115
摘要： The present invention relates to a copolymer resin for a photoresist used with far ultraviolet rays such as KrF or ArF. The copolymer is represented by the following formula III:
摘要翻译：本发明涉及用于与诸如KrF或ArF的远紫外线一起使用的光刻胶的共聚物树脂。共聚物由下式III表示：

44. 发明授权

US06797451B2 Reflection-inhibiting resin used in process for forming photoresist pattern 失效
标题翻译：用于形成光致抗蚀剂图案的工艺中使用的反射抑制树脂
公开(公告)号：US06797451B2
公开(公告)日：2004-09-28
申请号：US10189056
申请日：2002-07-03
申请人： Sung Eun Hong , Min Ho Jung , Hyeong Soo Kim , Jae Chang Jung , Ki Ho Baik
发明人： Sung Eun Hong , Min Ho Jung , Hyeong Soo Kim , Jae Chang Jung , Ki Ho Baik
IPC分类号： G03C176
CPC分类号： C08F220/32 , G03F7/091 , Y10S430/111 , Y10S430/122
摘要： The present invention provides a resin of the formula: where R1, R2, R3, x and y are those defined herein. The present invention also provides methods for using the above described resin to inhibit reflection of light from the lower layer of a wafer substrate during a photoresist pattern formation process.
摘要翻译：本发明提供下式的树脂：其中R1，R2，R3，x和y是本文定义的那些。本发明还提供了在光致抗蚀剂图案形成工艺期间使用上述树脂抑制来自晶片衬底的下层的光的反射的方法。

45. 发明授权

US06372935B1 Copolymer resin, preparation thereof, and photoresist using the same 失效
标题翻译：共聚物树脂及其制备方法和使用其的光致抗蚀剂
公开(公告)号：US06372935B1
公开(公告)日：2002-04-16
申请号：US09861394
申请日：2001-05-18
申请人： Min Ho Jung , Jae Chang Jung , Cheol Kyu Bok , Ki Ho Baik
发明人： Min Ho Jung , Jae Chang Jung , Cheol Kyu Bok , Ki Ho Baik
IPC分类号： C07C6974
CPC分类号： C07D309/12 , C07C69/013 , C07C69/54 , C07C69/757 , G03F7/0045
摘要： The present invention relates to a copolymer resin for ultra-shortwave light source such as KrF or ArF, process for preparation thereof, and photoresist comprising the same resin. The copolymer resin according to the present invention is easily prepared by conventional radical polymerization due to the introduction of norbornyl(meth)acrylate unit to a structure of copolymer for photoresist. The resin has high transparency at 193 nm wavelength, provides increased etching resistance and enhanced adhesive strength due to a hydrophilic functional group in the norbornyl group, and shows excellent resolution of 0.15 Fm in practical experiment of patterning.
摘要翻译：本发明涉及用于超短波光源如KrF或ArF的共聚物树脂，其制备方法和包含相同树脂的光致抗蚀剂。由于将（甲基）丙烯酸降冰片酯单元引入到光致抗蚀剂共聚物的结构中，本发明的共聚物树脂通过常规的自由基聚合容易地制备。该树脂在193nm波长处具有高透明度，由于降冰片基中的亲水性官能团而提供增强的耐蚀刻性和增强的粘合强度，并且在实际的图案化实验中显示出优异的分辨率为0.15Fm。

46. 发明授权

US06608158B2 Copolymer resin, preparation thereof, and photoresist using the same 有权
公开(公告)号：US06608158B2
公开(公告)日：2003-08-19
申请号：US10055674
申请日：2002-01-22
申请人： Min Ho Jung , Jae Chang Jung , Cheol Kyu Bok , Ki Ho Baik
发明人： Min Ho Jung , Jae Chang Jung , Cheol Kyu Bok , Ki Ho Baik
IPC分类号： C08F3208
CPC分类号： C08F232/08 , C08F222/06 , G03F7/0045 , G03F7/039 , Y10S430/115
摘要： The present invention relates to a copolymer resin for a photoresist used in far ultraviolet ray such as KrF or ArF, process for preparation thereof, and photoresist comprising the same resin. The copolymer resin according to the present invention is easily prepared by conventional radical polymerization due to the introduction of mono-methyl cis-5-norbonen-endo-2,3-dicarboxylate unit to a structure of norbornene-maleic anhydride copolymer for photoresist. The resin has high transparency at 193 nm wavelength, provides increased etching resistance and settles the problem of offensive odor occurred in the course of copolymer resin synthesis. Further, as the resin composition can be easily controlled due to the molecular structure, the resin can be manufactured in a large scale.

47. 发明授权

US06248847B1 Copolymer resin, preparation thereof, and photoresist using the same 有权
标题翻译：共聚物树脂及其制备方法和使用其的光致抗蚀剂
公开(公告)号：US06248847B1
公开(公告)日：2001-06-19
申请号：US09208650
申请日：1998-12-10
申请人： Min Ho Jung , Jae Chang Jung , Cheol Kyu Bok , Ki Ho Baik
发明人： Min Ho Jung , Jae Chang Jung , Cheol Kyu Bok , Ki Ho Baik
IPC分类号： C08F2606
CPC分类号： C07D309/12 , C07C69/013 , C07C69/54 , C07C69/757 , G03F7/0045
摘要： The present invention relates to a copolymer resin for ultra-shortwave light source such as KrF or ArF, process for preparation thereof, and photoresist comprising the same resin. The copolymer resin according to the present invention is easily prepared by conventional radical polymerization due to the introduction of norbonyl(meth)acrylate unit to a structure of copolymer for photoresist. The resin has high transparency at 193 nm wavelength, provides increased etching resistance and enhanced adhesive strength due to a hydrophilic functional group in the norbonyl group, and shows excellent resolution of 0.15 &mgr;m in practical experiment of patterning.
摘要翻译：本发明涉及用于超短波光源如KrF或ArF的共聚物树脂，其制备方法和包含相同树脂的光致抗蚀剂。由于将（甲基）丙烯酸去羰基酯单元引入到光致抗蚀剂共聚物的结构中，本发明的共聚物树脂可以容易地通过常规的自由基聚合制备。该树脂在193nm波长处具有高透明度，由于在诺乃诺基中具有亲水性官能团，提供了更高的抗蚀刻性和增强的粘合强度，并且在实际的图案化实验中显示出优异的0.15μm分辨率。

48. 发明授权

US06537724B1 Photoresist composition for resist flow process, and process for forming contact hole using the same 失效
标题翻译：用于抗蚀剂流程的光刻胶组合物，以及使用其形成接触孔的工艺
公开(公告)号：US06537724B1
公开(公告)日：2003-03-25
申请号：US09704265
申请日：2000-11-01
申请人： Geun Su Lee , Jin Soo Kim , Hyeong Soo Kim , Ki Ho Baik
发明人： Geun Su Lee , Jin Soo Kim , Hyeong Soo Kim , Ki Ho Baik
IPC分类号： G03F7004
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/0395 , Y10S430/106
摘要： The present invention provides photoresist resins and photoresist compositions comprising the same, which are useful in a resist flow process. The present invention also provides a process for forming a contact hole pattern using the same. In particular, the photoresist resin of the present invention comprises a mixture of polymers. Preferably, a mixture of a first copolymer and a second copolymer. In one aspect, the first and the second copolymers have different properties. Photoresist compositions of the present invention can be used to reduce or eliminate photoresist overflow during a resist flow process. In addition, photoresist compositions of the present invention allow formation of uniform sized patterns and improve standing wave effect.
摘要翻译：本发明提供了包含该光刻胶的光致抗蚀剂树脂和光致抗蚀剂组合物，其可用于抗蚀剂流动过程。本发明还提供一种使用其形成接触孔图案的方法。特别地，本发明的光致抗蚀剂树脂包含聚合物的混合物。优选地，第一共聚物和第二共聚物的混合物。一方面，第一和第二共聚物具有不同的性质。本发明的光刻胶组合物可用于在抗蚀剂流动过程中减少或消除光致抗蚀剂溢出。此外，本发明的光致抗蚀剂组合物允许形成均匀尺寸的图案并改善驻波效应。

49. 发明授权

US06630281B2 Photoresist composition for top-surface imaging processes by silylation 失效
标题翻译：用于通过甲硅烷基化的顶表面成像方法的光致抗蚀剂组合物
公开(公告)号：US06630281B2
公开(公告)日：2003-10-07
申请号：US09902152
申请日：2001-07-10
申请人： Cha Won Koh , Geun Su Lee , Ki Ho Baik
发明人： Cha Won Koh , Geun Su Lee , Ki Ho Baik
IPC分类号： G03F7038
CPC分类号： G03F7/0382 , G03F7/38 , Y10S430/106 , Y10S430/11 , Y10S430/128
摘要： Photoresist compositions for a Top-surface Imaging Process by Silylation (TIPS), and a process for forming a positive pattern according to the TIPS using the same. The photoresist composition for the TIPS comprises a cross-linker of following Formula 1 or 2. A protecting group of the cross-linker and a hydroxyl group of the photoresist polymer are selectively crosslinked in the exposed region, and the residual hydroxyl group reacts to a silylating agent in the non-exposed region by silylation. Thus, the non-exposed region only remains after the dry-development, thereby forming a positive pattern. In addition, the photoresist composition of the present invention is suitable for the TIPS lithography using light sources such as ArF (193 nm), VUV (157 nm) and EUV (13 nm). wherein, R1, R2, R3, R4, R5, R6 and R7 are as defined in the specification.
摘要翻译：用于通过甲硅烷基化（TIPS）的顶表面成像方法的光致抗蚀剂组合物，以及根据使用其的TIPS形成阳性图案的方法。用于TIPS的光致抗蚀剂组合物包含下式1或2的交联剂。交联剂的保护基团和光致抗蚀剂聚合物的羟基在暴露区域中选择性交联，并且残余的羟基与通过甲硅烷基化在非暴露区域中的甲硅烷基化剂。因此，未曝光区域仅在干显影之后保留，从而形成正图案。另外，本发明的光致抗蚀剂组合物适用于使用诸如ArF（193nm），VUV（157nm）和EUV（13nm）的光源的TIPS光刻，其中R1，R2，R3，R4，R5 R6和R7如本说明书中所定义。

50. 发明授权

US06387589B1 Photoresist polymers and photoresist compositions containing the same 失效
标题翻译：光致抗蚀剂聚合物和含有它们的光致抗蚀剂组合物
公开(公告)号：US06387589B1
公开(公告)日：2002-05-14
申请号：US09640262
申请日：2000-08-16
申请人： Cha Won Koh , Geun Su Lee , Ki Ho Baik
发明人： Cha Won Koh , Geun Su Lee , Ki Ho Baik
IPC分类号： G03F7004
CPC分类号： G03F7/0046 , C08F232/08 , G03F7/0395 , Y10S430/115 , Y10S430/122 , C08F222/06 , C08F214/26
摘要： The present invention provides photoresist polymers and photoresist compositions comprising the same. The photoresist polymer is represented by the following Chemical Formula 5. Photoresist compositions containing the polymers of the present invention have superior transmittance at 157 nm wavelength, etching resistance, heat resistance, and adhesiveness. In addition, photoresist compositions of the present invention can be developed easily in 2.38 wt % aqueous TMAH solution, and are therefore suitable for lithography processes using a 157 nm wavelength-light source for fabricating a minute circuit of a high integration semiconductor device: wherein R, R*, X, Y, V, W, i, j, w, x, y and z are as described herein.
摘要翻译：本发明提供了包含其的光致抗蚀剂聚合物和光致抗蚀剂组合物。光致抗蚀剂聚合物由以下化学式5表示。含有本发明聚合物的光致抗蚀剂组合物在157nm波长，耐蚀刻性，耐热性和粘合性方面具有优异的透光率。此外，本发明的光致抗蚀剂组合物可以在2.38重量％的TMAH水溶液中容易地开发，因此适用于使用157nm波长光源制造高集成半导体器件的微小电路的光刻工艺：其中R ，R *，X，Y，V，W，i，j，w，x，y和z如本文所述。

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