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    • 42. 发明授权
    • Nitride-based semiconductor device of reduced voltage drop, and method of fabrication
    • 降低电压降的氮化物半导体器件及其制造方法
    • US07671375B2
    • 2010-03-02
    • US11378963
    • 2006-03-17
    • Koji OtsukaTetsuji MokuJunji SatoYoshiki TadaTakashi Yoshida
    • Koji OtsukaTetsuji MokuJunji SatoYoshiki TadaTakashi Yoshida
    • H01L33/00
    • H01L29/267H01L21/02381H01L21/02458H01L21/02507H01L21/0254H01L21/02576H01L21/02579H01L21/0262H01L29/2003H01L33/007
    • A light-emitting diode is built on a silicon substrate which has been doped with a p-type impurity to possess sufficient conductivity to provide part of the current path through the LED. The p-type silicon substrate has epitaxially grown thereon a buffer region of n-type AlInGaN. Further grown epitaxially on the buffer region is the main semiconductor region of the LED which comprises a lower confining layer of n-type GaN, an active layer for generating light, and an upper confining layer of p-type GaN. In the course of the growth of the buffer region and main semiconductor region there occurs a thermal diffusion of gallium and other Group III elements from the buffer region into the p-type silicon substrate, with the consequent creation of a p-type low-resistance region in the substrate. Interface levels are created across the heterojunction between p-type silicon substrate and n-type buffer region. The interface levels expedite carrier transport from substrate to buffer region, contributing to reduction of the drive voltage requirement of the LED.
    • 在已经掺杂有p型杂质的硅衬底上建立发光二极管以具有足够的导电性以提供通过LED的电流路径的一部分。 p型硅衬底在其上外延生长n型AlInGaN的缓冲区。 在缓冲区域外延生长的是LED的主要半导体区域,其包括n型GaN的下约束层,用于产生光的有源层和p型GaN的上部约束层。 在缓冲区和主半导体区域的生长过程中,发生镓和其他III族元素从缓冲区到p型硅衬底的热扩散,随之产生p型低电阻 区域。 在p型硅衬底和n型缓冲区之间的异质结上形成界面电平。 接口电平加快了从衬底到缓冲区域的载流子传输,有助于降低LED的驱动电压要求。
    • 43. 发明授权
    • Controlled compressor apparatus
    • 受控压缩机设备
    • US06688121B2
    • 2004-02-10
    • US10230254
    • 2002-08-29
    • Yoshiki TadaShigeki Iwanami
    • Yoshiki TadaShigeki Iwanami
    • B60H132
    • F25B27/00B60H1/3222F25B49/022F25B2600/023F25B2700/151
    • A controlled compressor apparatus for idle-stopping vehicles that permits precise variable displacement control of a compressor and reduces power consumption when the compressor is motor-driven. The apparatus includes a battery-powered motor and a control unit for selecting the engine or the motor to drive the compressor and for controlling the displacement of the compressor. A current detector detects the magnitude of a current supplied to the motor. The control unit stores a relationship between the displacement and the current and controls the displacement based on the current detected by the current detector.
    • 一种用于怠速停止车辆的受控压缩机装置,其允许对压缩机进行精确的可变排量控制并且当压缩机被电动驱动时降低功率消耗。 该装置包括电池供电的电动机和用于选择发动机或电动机以驱动压缩机并控制压缩机的排量的控制单元。 电流检测器检测提供给电动机的电流的大小。 控制单元存储位移和电流之间的关系,并且基于由电流检测器检测到的电流来控制位移。