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41. 发明申请

US20050057288A1 Semiconductor device with pump circuit 有权
标题翻译：带泵电路的半导体器件
公开(公告)号：US20050057288A1
公开(公告)日：2005-03-17
申请号：US10941004
申请日：2004-09-15
申请人： Minoru Senda , Kiyohiro Furutani , Taku Ogura , Shigehiro Kuge , Satoshi Kawasaki , Tadaaki Yamauchi
发明人： Minoru Senda , Kiyohiro Furutani , Taku Ogura , Shigehiro Kuge , Satoshi Kawasaki , Tadaaki Yamauchi
IPC分类号： G11C16/06 , G11C5/14 , G11C16/04 , G11C16/30 , H01L21/822 , H01L21/8247 , H01L27/04 , H01L27/10 , H01L27/115 , H01L29/788 , H01L29/792 , H02M3/07 , H03L7/06
CPC分类号： G11C16/30 , G11C5/145 , G11C16/04 , H02M3/073 , H02M2003/071 , H02M2003/075 , H02M2003/077 , H03K3/356113
摘要： In the present semiconductor device a positive, driving pump circuit is driven by an external power supply potential EXVDD (for example of 1.8V) to generate a positive voltage VPC (for example of 2.4V). A negative pump circuit for internal operation is driven by the positive voltage VPC to generate a negative voltage VNA (for example of −9.2V) required in an erasure or similar internal operation for a word line. The negative pump circuit for internal operation can have a smaller number of stages of pump and hence consume a smaller area than when the circuit is driven by the external power supply voltage EXVDD (for example of 1.8V) as conventional.
摘要翻译：在本半导体器件中，正的驱动泵电路由外部电源电位EXVDD（例如1.8V）驱动以产生正电压VPC（例如2.4V）。用于内部操作的负泵电路由正电压VPC驱动以产生对于字线的擦除或类似的内部操作所需的负电压VNA（例如-9.2V）。用于内部操作的负泵电路可以具有较少数量的泵级，并且因此消耗比通过外部电源电压EXVDD（例如1.8V）驱动电路时更小的面积。

42. 外观设计

USD699349S1 Scaler tip 有权
标题翻译：缩放提示
公开(公告)号：USD699349S1
公开(公告)日：2014-02-11
申请号：US29420161
申请日：2012-05-04
申请人： Satoshi Kawasaki
设计人： Satoshi Kawasaki

43. 发明授权

US07919553B2 Rubber composition for base tread and tire 有权
标题翻译：基础胎面和轮胎的橡胶组合物
公开(公告)号：US07919553B2
公开(公告)日：2011-04-05
申请号：US12555885
申请日：2009-09-09
申请人： Satoshi Kawasaki , Takayuki Hattori
发明人： Satoshi Kawasaki , Takayuki Hattori
IPC分类号： C08K5/04 , C08K5/00
CPC分类号： C08L7/00 , B60C1/0016 , C08K5/098 , C08L9/00 , C08L21/00 , C08L2666/08
摘要： The present invention aims to produce a rubber composition for a base tread, which suppresses reversion and achieves excellent mechanical strength, fuel economy and processability, and a tire using the rubber composition, with high efficiency to provide them to customers at low prices. The present invention relates to a rubber composition for a base tread, containing: a rubber component; and a mixture of a zinc salt of an aliphatic carboxylic acid and a zinc salt of an aromatic carboxylic acid, wherein the rubber component contains natural rubber and butadiene rubber, the butadiene rubber content being 10 to 90% by mass per 100% by mass of the rubber component, and the mixture of a zinc salt of an aliphatic carboxylic acid and a zinc salt of an aromatic carboxylic acid is contained in an amount of 1 to 10 parts by mass per 100 parts by mass of the rubber component.
摘要翻译：本发明的目的在于制造一种用于胎面基底的橡胶组合物，其能够高效率地以低价格向顾客提供逆转和优异的机械强度，燃料经济性和加工性，以及使用该橡胶组合物的轮胎。本发明涉及一种用于胎面基底的橡胶组合物，其包含：橡胶组分; 和脂肪族羧酸的锌盐与芳香族羧酸的锌盐的混合物，其中，所述橡胶成分含有天然橡胶和丁二烯橡胶，丁二烯橡胶的含量为每100质量％为10〜90质量％橡胶成分，芳香族羧酸的锌盐和锌盐的混合物的含量相对于橡胶成分为100质量份为1〜10质量份。

44. 发明申请

US20090310410A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US20090310410A1
公开(公告)日：2009-12-17
申请号：US12546062
申请日：2009-08-24
申请人： Yoshihiko Kusakabe , Kenichi Oto , Satoshi Kawasaki
发明人： Yoshihiko Kusakabe , Kenichi Oto , Satoshi Kawasaki
IPC分类号： G11C16/04 , G11C8/10
CPC分类号： G11C8/08 , G11C8/10 , G11C8/14 , G11C16/08
摘要： A sub-decoder element provided corresponding to each word line is constructed by the same conductive type MOS transistors. The sub-decoder elements are arranged in a plurality of columns such that the layout of active regions for forming the sub-decoder elements is inverted in a Y direction and displaced by one sub-decoder element in an X direction. The arrangement of the sub-decoder elements is adjusted such that high voltage is not applied to both of gate electrodes adjacent in the Y direction. A well voltage of a well region for forming the sub-decoder element group is set to a voltage level such that a source to substrate of the transistor of the sub-decoder element is set into a deep reversed-bias state. In a nonvolatile semiconductor memory device, the leakage by a parasitic MOS in a sub-decoder circuit or word line driving circuit to which a positive or negative high voltage is supplied, can be suppressed.
摘要翻译：对应于每个字线提供的子解码器元件由相同的导电型MOS晶体管构成。子解码器元件布置在多个列中，使得用于形成子解码器元件的有源区域的布局在Y方向上反转并且沿着X方向被一个子解码器元件移位。调整副解码器元件的布置，使得高电压不施加到在Y方向上相邻的两个栅电极。用于形成子解码器元件组的阱区的阱电压被设置为电压电平，使得子解码器元件的晶体管的源极到衬底被设置为深的反向偏置状态。在非易失性半导体存储器件中，可以抑制在供给正或负高电压的子解码器电路或字线驱动电路中的寄生MOS的泄漏。

45. 发明授权

US07596033B2 Nonvolatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US07596033B2
公开(公告)日：2009-09-29
申请号：US12216489
申请日：2008-07-07
申请人： Yoshihiko Kusakabe , Kenichi Oto , Satoshi Kawasaki
发明人： Yoshihiko Kusakabe , Kenichi Oto , Satoshi Kawasaki
IPC分类号： G11C16/06 , G11C16/04
CPC分类号： G11C8/08 , G11C8/10 , G11C8/14 , G11C16/08
摘要： A sub-decoder element provided corresponding to each word line is constructed by the same conductive type MOS transistors. The sub-decoder elements are arranged in a plurality of columns such that the layout of active regions for forming the sub-decoder elements is inverted in a Y direction and displaced by one sub-decoder element in an X direction. The arrangement of the sub-decoder elements is adjusted such that high voltage is not applied to both of gate electrodes adjacent in the Y direction. A well voltage of a well region for forming the sub-decoder element group is set to a voltage level such that a source to substrate of the transistor of the sub-decoder element is set into a deep reversed-bias state. In a nonvolatile semiconductor memory device, the leakage by a parasitic MOS in a sub-decoder circuit or word line driving circuit to which a positive or negative high voltage is supplied, can be suppressed.
摘要翻译：对应于每个字线提供的子解码器元件由相同的导电型MOS晶体管构成。子解码器元件布置在多个列中，使得用于形成子解码器元件的有源区域的布局在Y方向上反转并且沿着X方向被一个子解码器元件移位。调整副解码器元件的布置，使得高电压不施加到在Y方向上相邻的两个栅电极。用于形成子解码器元件组的阱区的阱电压被设置为电压电平，使得子解码器元件的晶体管的源极到衬底被设置为深的反向偏置状态。在非易失性半导体存储器件中，可以抑制在供给正或负高电压的子解码器电路或字线驱动电路中的寄生MOS的泄漏。

46. 发明申请

US20080273396A1 Nonvolatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US20080273396A1
公开(公告)日：2008-11-06
申请号：US12216489
申请日：2008-07-07
申请人： Yoshihiko Kusakabe , Kenichi Oto , Satoshi Kawasaki
发明人： Yoshihiko Kusakabe , Kenichi Oto , Satoshi Kawasaki
IPC分类号： G11C16/04
CPC分类号： G11C8/08 , G11C8/10 , G11C8/14 , G11C16/08
摘要： A sub-decoder element provided corresponding to each word line is constructed by the same conductive type MOS transistors. The sub-decoder elements are arranged in a plurality of columns such that the layout of active regions for forming the sub-decoder elements is inverted in a Y direction and displaced by one sub-decoder element in an X direction. The arrangement of the sub-decoder elements is adjusted such that high voltage is not applied to both of gate electrodes adjacent in the Y direction. A well voltage of a well region for forming the sub-decoder element group is set to a voltage level such that a source to substrate of the transistor of the sub-decoder element is set into a deep reversed-bias state. In a nonvolatile semiconductor memory device, the leakage by a parasitic MOS in a sub-decoder circuit or word line driving circuit to which a positive or negative high voltage is supplied, can be suppressed.
摘要翻译：对应于每个字线提供的子解码器元件由相同的导电型MOS晶体管构成。子解码器元件布置在多个列中，使得用于形成子解码器元件的有源区域的布局在Y方向上反转并且沿着X方向被一个子解码器元件移位。调整副解码器元件的布置，使得高电压不施加到在Y方向上相邻的两个栅电极。用于形成子解码器元件组的阱区的阱电压被设置为电压电平，使得子解码器元件的晶体管的源极到衬底被设置为深的反向偏置状态。在非易失性半导体存储器件中，可以抑制在供给正或负高电压的子解码器电路或字线驱动电路中的寄生MOS的泄漏。

47. 发明申请

US20070183213A1 Nonvolatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US20070183213A1
公开(公告)日：2007-08-09
申请号：US11701404
申请日：2007-02-02
申请人： Yoshihiko Kusakabe , Kenichi Oto , Satoshi Kawasaki
发明人： Yoshihiko Kusakabe , Kenichi Oto , Satoshi Kawasaki
IPC分类号： G11C16/06 , G11C8/00 , G11C11/34 , G11C16/04
CPC分类号： G11C8/08 , G11C8/10 , G11C8/14 , G11C16/08
摘要： A sub-decoder element provided corresponding to each word line is constructed by the same conductive type MOS transistors. The sub-decoder elements are arranged in a plurality of columns such that the layout of active regions for forming the sub-decoder elements is inverted in a Y direction and displaced by one sub-decoder element in an X direction. The arrangement of the sub-decoder elements is adjusted such that high voltage is not applied to both of gate electrodes adjacent in the Y direction. A well voltage of a well region for forming the sub-decoder element group is set to a voltage level such that a source to substrate of the transistor of the sub-decoder element is set into a deep reversed-bias state. In a nonvolatile semiconductor memory device, the leakage by a parasitic MOS in a sub-decoder circuit or word line driving circuit to which a positive or negative high voltage is supplied, can be suppressed.
摘要翻译：对应于每个字线提供的子解码器元件由相同的导电型MOS晶体管构成。子解码器元件布置在多个列中，使得用于形成子解码器元件的有源区域的布局在Y方向上反转并且沿着X方向被一个子解码器元件移位。调整副解码器元件的布置，使得高电压不施加到在Y方向上相邻的两个栅电极。用于形成子解码器元件组的阱区的阱电压被设置为电压电平，使得子解码器元件的晶体管的源极到衬底被设置为深的反向偏置状态。在非易失性半导体存储器件中，可以抑制在供给正或负高电压的子解码器电路或字线驱动电路中的寄生MOS的泄漏。

48. 发明申请

US20070120592A1 Semiconductor device with pump circuit 有权
公开(公告)号：US20070120592A1
公开(公告)日：2007-05-31
申请号：US11699427
申请日：2007-01-30
申请人： Minoru Senda , Kiyohiro Furutani , Taku Ogura , Shigehiro Kuge , Satoshi Kawasaki , Tadaaki Yamauchi
发明人： Minoru Senda , Kiyohiro Furutani , Taku Ogura , Shigehiro Kuge , Satoshi Kawasaki , Tadaaki Yamauchi
IPC分类号： G05F1/10
CPC分类号： G11C16/30 , G11C5/145 , G11C16/04 , H02M3/073 , H02M2003/071 , H02M2003/075 , H02M2003/077 , H03K3/356113
摘要： In the present semiconductor device a positive, driving pump circuit is driven by an external power supply potential EXVDD (for example of 1.8V) to generate a positive voltage VPC (for example of 2.4V). A negative pump circuit for internal operation is driven by the positive voltage VPC to generate a negative voltage VNA (for example of −9.2V) required in an erasure or similar internal operation for a word line. The negative pump circuit for internal operation can have a smaller number of stages of pump and hence consume a smaller area than when the circuit is driven by the external power supply voltage EXVDD (for example of 1.8V) as conventional.

49. 发明授权

US07086492B2 Fuel cell vehicle 有权
标题翻译：燃料电池车
公开(公告)号：US07086492B2
公开(公告)日：2006-08-08
申请号：US10646236
申请日：2003-08-22
申请人： Satoshi Kawasaki , Tohru Ono , Yukio Hiruta
发明人： Satoshi Kawasaki , Tohru Ono , Yukio Hiruta
IPC分类号： B60K28/10
CPC分类号： B60L11/1896 , B60K1/04 , B60L3/0007 , B60L11/1877 , Y02T10/705 , Y02T90/34
摘要： A fuel cell vehicle driven by generated electric power of a fuel cell comprises a fuel cell box disposed underneath a floor for storing therein the fuel call, G sensors for detecting a deformation of a vehicle body sideward of the fuel cell box, and a shut-off valve for closing a supply side piping of a hydrogen gas supplied to the fuel cell when a predetermined amount of deformation or the vehicle body is detected by the G sensors.
摘要翻译：由燃料电池的发电电动机驱动的燃料电池车辆包括：燃料电池箱，设置在地板下面，用于在其中存储燃料呼叫;用于检测燃料电池箱侧车体的变形的G传感器; 关闭阀，用于当通过G传感器检测到预定量的变形或车体时，关闭供给到燃料电池的氢气的供给侧管路。

50. 发明授权

US06953099B2 Body structure of fuel cell vehicle 失效
标题翻译：燃料电池车体结构
公开(公告)号：US06953099B2
公开(公告)日：2005-10-11
申请号：US10611202
申请日：2003-06-30
申请人： Satoshi Kawasaki , Tohru Ono
发明人： Satoshi Kawasaki , Tohru Ono
IPC分类号： B62D25/04 , B60K1/00 , B60K1/04 , B60K15/01 , B60K15/063 , B60K15/07 , B60L11/18 , B62D25/20 , H01M8/00 , H01M8/04
CPC分类号： B60L11/1896 , B60K1/04 , B60K15/07 , B60K2015/0638 , B60L3/0007 , Y02T90/34
摘要： A body structure of a fuel cell vehicle which is driven using power generated by a fuel cell. The body structure comprises a frame unit which supports a fuel tank for storing fuel for the fuel cell; a fuel cell box which accommodates the fuel cell, the fuel cell box being disposed in proximity of the frame unit at a floor of the vehicle, a fuel feed pipe which connects the fuel tank and the fuel cell, and a pillar which is disposed at a position, viewed from the side of the vehicle, covering at least a part of the fuel cell box and at least a part of the frame unit.
摘要翻译：使用燃料电池产生的电力驱动燃料电池车辆的车体结构。车身结构包括一个框架单元，该框架单元支撑用于储存用于燃料电池的燃料的燃料箱; 燃料电池箱，其容纳所述燃料电池，所述燃料电池箱设置在所述车架单元的车辆底部附近，连接所述燃料箱和所述燃料电池的燃料供给管，以及配置在所述燃料电池盒从车辆侧观察位置，覆盖燃料电池箱的至少一部分和框架单元的至少一部分。

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