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41. 发明授权

US4973353A 1,5-diphenyl-1H-1,2,4-triazole-3-carboxamide derivatives and herbicidal composition containing the same 失效
标题翻译： 1,5-二苯基-1H-1,2,4-三唑-3-甲酰胺衍生物和含有它们的除草组合物
公开(公告)号：US4973353A
公开(公告)日：1990-11-27
申请号：US162699
申请日：1988-03-01
申请人： Takafumi Shida , Hideo Arabori , Takeo Watanabe , Yoshikazu Kubota , Isao Ichinose , Yoichi Kanda , Shiro Yamazaki , Hiroyasu Shinkawa
发明人： Takafumi Shida , Hideo Arabori , Takeo Watanabe , Yoshikazu Kubota , Isao Ichinose , Yoichi Kanda , Shiro Yamazaki , Hiroyasu Shinkawa
IPC分类号： A01N43/653 , C07C205/34 , C07C205/35 , C07C217/76 , C07D249/10
CPC分类号： C07C205/34 , A01N43/653 , C07C205/35 , C07C217/76 , C07D249/10
摘要： Disclosed herein is a derivative of 1,5-diphenyl-1H-1,2,4-triazole-3-carboxamide represented by the formula (I): ##STR1## wherein R is a straight-chain alkyl group having 1 to 10 carbon atoms which is non-substituted or substituted with 1 to 19 fluorine atoms, a branched alkyl group having 3 to 10 carbon atoms which is non-substituted or substituted with 1 to 19 fluorine atoms, a cyclic alkyl group having 3 to 10 carbon atoms, an alkyl group having 1 to 3 carbon atoms which is substituted with an alicyclic structure having 3 to 7 carbon atoms, a phenyl group or an aralkyl group having 7 to 9 carbon atoms; X.sup.1 is a halogen or an alkyl group having 1 to 3 carbon atoms; X.sup.2 is a hydrogen, a halogen or an alkyl group having 1 to 3 carbon atoms; Y.sup.1 is a hydrogen or a fluorine; and Y.sup.2 is a hydrogen or a fluorine, and the herbicidal compositions containing said derivatives as active ingredient therefor.The derivative of 1,5-diphenyl-1H-1,2,4-triazole-3-carboxamide represented by the formula (I) of the present invention is the compound having high herbicidal activity and also showing excellent selectivity for killing weeds alone without doing any serious harm to the crops such as rice, wheat and corn.

42. 发明授权

US4902805A Derivatives of dihydrotriazole, and herbicidal compositions containing the same as an active ingredient 失效
标题翻译：二氢三唑衍生物和含有其作为活性成分的除草组合物
公开(公告)号：US4902805A
公开(公告)日：1990-02-20
申请号：US820948
申请日：1986-01-21
申请人： Takafumi Shida , Takeo Watanabe , Shiro Yamazaki , Hiroyasu Shinkawa , Keigo Satake
发明人： Takafumi Shida , Takeo Watanabe , Shiro Yamazaki , Hiroyasu Shinkawa , Keigo Satake
IPC分类号： A01N43/653 , C07D249/10 , C07D405/04
CPC分类号： C07D405/04 , A01N43/653 , C07D249/10
摘要： Disclosed herein are a derivative of dihydrotriazole represented by the general formula (I): ##STR1## wherein R.sup.1 represents an amino group, lower alkoxy group, or lower alkyl amino group, R.sup.2 represents a hydrogen atom, halogen atom, or lower alkyl group and R.sup.3 represents a hydrogen atom, lower alkyl group, benzyl group, furyl group, phenyl group or phenyl group substituted with a halogen atom, hydroxyl group, carboxyl group, methoxycarbonyl group, lower alkyl group or lower alkoxy group, and a herbicidal composition containing as an active ingredient at least one of the derivatives of dihydrotriazole.
摘要翻译：本文公开了由通式（I）表示的二氢三唑衍生物：其中R 1表示氨基，低级烷氧基或低级烷基氨基，R 2表示氢原子，卤原子或低级烷基，R 3表示氢原子，低级烷基，苄基，呋喃基，苯基或被卤素原子，羟基，羧基，甲氧基羰基，低级烷基或低级烷氧基取代的苯基，除草组合物，其含有作为活性成分的二氢三唑衍生物中的至少一种。

43. 发明授权

US4897106A Derivative of 4,5-dihydro-1H-1,2,4-triazole-3-carboxamide, and herbicidal composition containing the derivative 失效
标题翻译： 4,5-二氢-1H-1,2,4-三唑-3-甲酰胺的衍生物和含有该衍生物的除草组合物
公开(公告)号：US4897106A
公开(公告)日：1990-01-30
申请号：US42165
申请日：1987-04-24
申请人： Takafumi Shida , Yoshikazu Kubota , Isao Ichinose , Shiro Yamazaki , Hiroyasu Shinkawa
发明人： Takafumi Shida , Yoshikazu Kubota , Isao Ichinose , Shiro Yamazaki , Hiroyasu Shinkawa
IPC分类号： A01N43/653 , C07D249/10
CPC分类号： C07C251/72 , A01N43/653 , C07D249/10
摘要： Disclosed herein are a derivative of 4,5-dihydro-1H-1,2,4-triazole-3-carboxamide represented by the formula (Io): ##STR1## wherein R.sup.1 represents a hydrogen atom, a halogen atom, an alkyl group of 1 to 3 carbon atoms or an alkoxy group of 1 to 3 carbon atoms, R.sup.2 represents a hydrogen atom or a halogen atom and R represents a straight-chain alkyl group of 1 to 8 carbon atoms, a branched-chain alkyl group of 3 to 8 carbon atoms, a cycloalkyl group of 3 to 8 carbon atoms, a (cycloalkyl)alkyl group of 4 to 8 carbon atoms, an alkenyl group of 3 to 8 carbon atoms, an alkynyl group of 3 to 8 carbon atoms, an alkoxyalkyl group of 3 to 8 carbon atoms, a phenyl group, an aralkyl group of 7 to 9 carbon atoms, a phenyl group substituted by halogen atom(s) or an alkyl group of 2 to 8 carbon atoms which is substituted by fluorine atom(s), an intermediate for producing the derivative and a herbicidal composition containing the derivative as an active ingredient.

44. 发明授权

US09028611B2 Method for producing group III nitride semiconductor 有权
标题翻译： III族氮化物半导体的制造方法
公开(公告)号：US09028611B2
公开(公告)日：2015-05-12
申请号：US12926995
申请日：2010-12-22
申请人： Shiro Yamazaki
发明人： Shiro Yamazaki
IPC分类号： C30B19/10 , C30B19/04 , C30B29/40 , C30B9/10 , C30B19/02 , C30B9/06
CPC分类号： C30B29/403 , C30B9/06 , C30B9/10 , C30B19/02 , C30B19/04 , C30B29/406
摘要： A method for producing a Group III nitride semiconductor includes reacting a molten mixture containing at least a Group III element and an alkali metal with a gas containing at least nitrogen, to thereby grow a Group III nitride semiconductor crystal on the seed crystal. The method includes forming a template substrate including a sapphire substrate and a first Group III nitride semiconductor layer as the seed crystal which is formed by vapor phase growth and which includes a c-plane as a main plane is employed, and the template substrate is placed and maintained in the molten mixture under conditions where crystal growth of the Group III nitride semiconductor is inhibited, to thereby partially melt back a plurality of separated parts of the first Group III nitride semiconductor layer to such a depth that the sapphire substrate is partially exposed.
摘要翻译：制备III族氮化物半导体的方法包括使至少含有III族元素和碱金属的熔融混合物与至少含有氮的气体反应，从而在晶种上生长III族氮化物半导体晶体。该方法包括形成包含蓝宝石衬底和第一III族氮化物半导体层的模板衬底，作为通过气相生长形成并且包括c面作为主平面的晶种，并且将模板衬底放置并且在III族氮化物半导体的晶体生长被抑制的条件下保持在熔融混合物中，从而部分地将第一III族氮化物半导体层的多个分离部分熔融回到蓝宝石衬底部分暴露的深度。

45. 发明授权

US08123856B2 Method and apparatus for producing group III nitride based compound semiconductor 有权
标题翻译：制备III族氮化物基化合物半导体的方法和装置
公开(公告)号：US08123856B2
公开(公告)日：2012-02-28
申请号：US12225550
申请日：2007-04-05
申请人： Shiro Yamazaki , Makoto Iwai , Takanao Shimodaira , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
发明人： Shiro Yamazaki , Makoto Iwai , Takanao Shimodaira , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
IPC分类号： C30B19/00 , C30B19/06
CPC分类号： C30B29/403 , C30B9/00 , Y10S117/90 , Y10T117/10 , Y10T117/1024
摘要： In the flux method, a source nitrogen gas is sufficiently heated before feeding to an Na—Ga mixture.The apparatus of the invention is provided for producing a group III nitride based compound semiconductor. The apparatus includes a reactor which maintains a group III metal and a metal differing from the group III metal in a molten state, a heating apparatus for heating the reactor, an outer vessel for accommodating the reactor and the heating apparatus, and a feed pipe for feeding a gas containing at least nitrogen from the outside of the outer vessel into the reactor. The feed pipe has a zone for being heated together with the reactor by means of the heating apparatus, wherein the zone is heated inside the outer vessel and outside the reactor.
摘要翻译：在通量法中，在将氮源充分加热至Na-Ga混合物之前，充分加热。提供本发明的装置用于制造III族氮化物基化合物半导体。该装置包括在熔融状态下维持III族金属和不同于III族金属的金属的反应器，用于加热反应器的加热装置，用于容纳反应器的外部容器和加热装置，以及用于将从外部容器外部至少含有氮气的气体进料到反应器中。进料管具有通过加热装置与反应器一起加热的区域，其中该区域在外部容器内部和反应器外部被加热。

46. 发明申请

US20090294909A1 N-type group III nitride-based compound semiconductor and production method therefor 有权
标题翻译： N型III族氮化物系化合物半导体及其制造方法
公开(公告)号：US20090294909A1
公开(公告)日：2009-12-03
申请号：US12453743
申请日：2009-05-20
申请人： Seiji Nagai , Shiro Yamazaki , Yasuhide Yakushi , Takayuki Sato , Makoto Iwai , Katsuhiro Imai , Yusuke Mori , Yasuo Kitaoka
发明人： Seiji Nagai , Shiro Yamazaki , Yasuhide Yakushi , Takayuki Sato , Makoto Iwai , Katsuhiro Imai , Yusuke Mori , Yasuo Kitaoka
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： C30B9/12 , C30B9/10 , C30B29/403
摘要： An object of the present invention is to realize, by the flux process, the production of a high-quality n-type semiconductor crystal having high concentration of electrons. The method of the invention for producing an n-type Group III nitride-based compound semiconductor by the flux process, the method including preparing a melt by melting at least a Group III element by use of a flux; supplying a nitrogen-containing gas to the melt; and growing an n-type Group III nitride-based compound semiconductor crystal on a seed crystal from the melt. In the method, carbon and germanium are dissolved in the melt, and germanium is incorporated as a donor into the semiconductor crystal, to thereby produce an n-type semiconductor crystal.The mole percentage of germanium to gallium in the melt is 0.05 mol % to 0.5 mol %, and the mole percentage of carbon to sodium is 0.1 mol % to 3.0 mol %.
摘要翻译：本发明的目的是通过磁通处理来实现具有高浓度电子的高质量n型半导体晶体的生产。本发明的用于通过助熔剂制造n型III族氮化物基化合物半导体的方法，该方法包括通过使用助熔剂熔化至少III族元素来制备熔体; 向熔体供给含氮气体; 以及从所述熔体在籽晶上生长n型III族氮化物基化合物半导体晶体。在该方法中，将碳和锗溶解在熔体中，并将锗作为供体掺入到半导体晶体中，从而制备n型半导体晶体。熔体中锗与镓的摩尔比为0.05摩尔％〜0.5摩尔％，碳与钠的摩尔比为0.1摩尔％〜3.0摩尔％。

47. 发明授权

US07459023B2 Method for producing semiconductor crystal 有权
标题翻译：半导体晶体的制造方法
公开(公告)号：US07459023B2
公开(公告)日：2008-12-02
申请号：US11590930
申请日：2006-11-01
申请人： Shiro Yamazaki , Koji Hirata , Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Yuji Yamada
发明人： Shiro Yamazaki , Koji Hirata , Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Yuji Yamada
IPC分类号： C30B25/12
CPC分类号： C30B25/00 , C30B9/00 , C30B29/403 , C30B29/406
摘要： The present invention provides a method for producing a Group III nitride compound semiconductor crystal, the semiconductor crystal being grown through the flux method employing a flux. At least a portion of a substrate on which the semiconductor crystal is to be grown is formed of a flux-soluble material. While the semiconductor crystal is grown on a surface of the substrate, the flux-soluble material is dissolved in the flux from a surface of the substrate that is opposite the surface on which the semiconductor crystal is grown. Alternatively, after the semiconductor crystal has been grown on a surface of the substrate, the flux-soluble material is dissolved in the flux from a surface of the substrate that is opposite the surface on which the semiconductor crystal has been grown. The flux-soluble material is formed of silicon. Alternatively, the flux-soluble material or the substrate is formed of a Group III nitride compound semiconductor having a dislocation density higher than that of the semiconductor crystal to be grown.
摘要翻译：本发明提供一种用于制造III族氮化物化合物半导体晶体的方法，该半导体晶体通过使用焊剂的焊剂法生长。待生长半导体晶体的基板的至少一部分由助熔剂材料形成。半导体晶体在衬底的表面上生长时，该助熔剂材料从衬底的与生长半导体晶体的表面相反的表面溶解在焊剂中。或者，在半导体晶体已经在基板的表面上生长之后，从基板的与半导体晶体已经生长的表面相对的表面的助熔剂中溶解助熔剂。助熔剂材料由硅形成。或者，助熔剂材料或衬底由位错密度高于要生长的半导体晶体的位错密度的III族氮化物化合物半导体形成。

48. 发明授权

US5242894A N-substituted-3-(nitrogen-containing 5-membered ring)-benzenesulfonamide derivatives, and herbicidal compositions 失效
标题翻译： N-取代-3-（含氮5元环） - 苯磺酰胺衍生物和除草组合物
公开(公告)号：US5242894A
公开(公告)日：1993-09-07
申请号：US871659
申请日：1992-04-21
申请人： Hideo Arahori , Shiro Yamazaki , Masato Arahira , Aiko Murakami
发明人： Hideo Arahori , Shiro Yamazaki , Masato Arahira , Aiko Murakami
IPC分类号： A01N47/36 , C07D207/32 , C07D207/333 , C07D207/337 , C07D207/44 , C07D207/452 , C07D521/00
CPC分类号： C07D207/333 , A01N47/36 , C07D207/337 , C07D207/452 , C07D231/12 , C07D233/56 , C07D249/08 , C07D521/00
摘要： Disclosed herein are N-substituted-3-(nitrogen-containing 5-membered ring)benzenesulfonamide derivatives of the formula (I): ##STR1## R.sup.1 is H, Cl, C.sub.1 -C.sub.3 alkyl or C.sub.1 -C.sub.4 alkoxycarbonyl; Z is CH or N; X.sup.1 is C.sub.1 -C.sub.3 is alkyl, C.sub.1 -C.sub.3 alkoxyl or Cl; and X.sup.2 is C.sub.1 -C.sub.3 alkyl or C.sub.1 -C.sub.3 alkoxyl, a process for the preparation thereof, and herbicidal compositions containing the N-substituted-3-(nitrogen-containing 5-membered ring)benzenesulfonamide derivatives as active ingredients.
摘要翻译：本文公开了式（I）的N-取代-3-（含氮五元环）苯磺酰胺衍生物：其中R 1是H，Cl，C 1 -C 3烷基或 C1-C4烷氧基羰基; Z是CH或N; X1是C1-C3是烷基，C1-C3烷氧基或C1; X2是C1-C3烷基或C1-C3烷氧基，其制备方法和含有N-取代-3-（含氮五元环）苯磺酰胺衍生物作为活性成分的除草组合物。

49. 发明授权

US5198566A N-substituted-3-(substituted hydrazino)-benzenesulfonamides 失效
标题翻译： N-取代-3-（取代的肼基） - 苯磺酰胺
公开(公告)号：US5198566A
公开(公告)日：1993-03-30
申请号：US892890
申请日：1992-06-03
申请人： Hideo Arabori , Shiro Yamazaki , Masato Arahira , Aiko Murakami
发明人： Hideo Arabori , Shiro Yamazaki , Masato Arahira , Aiko Murakami
IPC分类号： A01N47/36 , C07C311/39 , C07D521/00
CPC分类号： C07D521/00 , A01N47/36 , C07C311/39
摘要： Disclosed herein are N-substituted-3-(substituted hydrazino)benzenesulfonamide derivatives of the formula (I): ##STR1## wherein R.sup.1 and CF.sub.3, COOH or CCl=CClCOOH, R.sup.2 is H, Cl, C.sub.1 -C.sub.3 alkyl or C.sub.1 -C.sub.4 alkoxycarbonyl; Z is CH or N; X.sup.1 is C.sub.1 -C.sub.3 alkyl, C.sub.1 -C.sub.3 alkoxyl or Cl; and X.sup.2 is C.sub.1 -C.sub.3 alkyl or C.sub.1 -C.sub.3 alkoxyl, a process for the preparation thereof, and herbicidal compositions containing the N-substituted-3-(substituted hydrazino)benzenesulfonamide derivatives as active ingredients.
摘要翻译：本文公开了式（I）的N-取代-3-（取代的肼基）苯磺酰胺衍生物：其中R 1和CF 3，COOH或CCl = CClCOOH，R 2是H，Cl，C 1 -C 3烷基或 C1-C4烷氧基羰基; Z是CH或N; X1是C1-C3烷基，C1-C3烷氧基或C1; X2是C1-C3烷基或C1-C3烷氧基，其制备方法和含有N-取代-3-取代的肼基苯磺酰胺衍生物作为活性成分的除草组合物。

50. 发明授权

US5162583A Benzylether derivatives 失效
标题翻译：苄醚衍生物
公开(公告)号：US5162583A
公开(公告)日：1992-11-10
申请号：US588996
申请日：1990-09-27
申请人： Takafumi Shida , Hideo Arabori , Takeo Watanabe , Yoshikazu Kubota , Isao Ichinose , Yoichi Kanda , Shiro Yamazaki , Hiroyasu Shinkawa
发明人： Takafumi Shida , Hideo Arabori , Takeo Watanabe , Yoshikazu Kubota , Isao Ichinose , Yoichi Kanda , Shiro Yamazaki , Hiroyasu Shinkawa
IPC分类号： A01N43/653 , C07C201/12 , C07C205/33 , C07C205/34 , C07C205/35 , C07C217/76 , C07D249/10
CPC分类号： A01N43/653 , C07C205/33 , C07C205/34 , C07C205/35 , C07C217/76 , C07D249/10
摘要： Disclosed herein are the derivative of benzyl ether represented by the formula (I) ##STR1## which is useful as an intermediate compound of the derivatives of 1,5-diphenyl-1H-1,2,4- triazole-3-carboxamide represented by the formula (II), ##STR2## wherein R is a straight-chain alkyl group having 1 to 10 carbon atoms which is non-substituted or substituted with 1 to 19 fluorine atoms, a branched alkyl group having 3 to 10 carbon atoms which is non-substituted or substituted with 1 to 19 fluorine atoms, a cyclic alkyl group having 3 to 10 carbon atoms, an alkyl group having 1 to 3 carbon atoms which is substituted with an alicyclic structure having 3 to 7 carbon atoms, a phenyl group or an aralkyl group having 7 to 9 carbon atoms; X.sup.1 is a halogen or an alkyl group having 1 to 3 carbon atoms; X.sup.2 is a hydrogen, a halogen or an alkyl group having 1 to 3 carbon atoms; Y.sup.1 is a hydrogen or a fluorine; Y.sup.2 is a hydrogen or a fluorine; and Z is a nitro group or an amino group.
摘要翻译：本文公开了由式（I）表示的苄基醚衍生物，其可用作1,5-二苯基-1H-1,2,4-三唑-3-基的衍生物的中间体化合物，由式（II）表示的羧酰胺，其中R是未取代或被1〜19个氟原子取代的碳原子数为1〜10的直链烷基，具有3个未取代或被1〜19个氟原子取代的10个碳原子，碳原子数3〜10的环状烷基，碳原子数1〜3的被碳数3〜7的脂环结构取代的烷基原子，苯基或碳原子数为7〜9的芳烷基; X1是卤素或具有1至3个碳原子的烷基; X 2是氢，卤素或具有1至3个碳原子的烷基; Y1是氢或氟; Y2是氢或氟; Z为硝基或氨基。

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