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41. 发明授权

US08837086B2 Magnetic recording head, manufacturing method thereof, and magnetic disk device 有权
标题翻译：磁记录头，其制造方法和磁盘装置
公开(公告)号：US08837086B2
公开(公告)日：2014-09-16
申请号：US13402914
申请日：2012-02-23
申请人： Yuta Udo , Katsuro Watanabe
发明人： Yuta Udo , Katsuro Watanabe
IPC分类号： G11B5/127 , G11B5/31 , G11B5/187 , G11B5/00
CPC分类号： G11B5/1278 , G11B5/187 , G11B5/3146 , G11B2005/0024 , Y10T29/49032
摘要： A magnetic recording head used for microwave-assisted magnetic recording includes: a main pole; a spin torque oscillator provided on the main pole, including a high-speed rotating magnetization layer in which the magnetization is rapidly rotated by a spin torque; a trailing shield provided on the spin torque oscillator; and a sub pole magnetically coupled to the trailing shield provided in a medium-facing surface, extending in a vertical direction to the medium-facing surface. Then, a non-magnetic electrode is provided on the outside of a trailing gap in which the spin torque oscillator is provided with respect to a magnetic material of the main pole, the trailing shield, or the sub pole, to prevent the line resistance variation due to the AMR effect or the eddy current. Thus, the variation of the current flowing to the spin torque oscillator can be controlled to achieve stable oscillation.
摘要翻译：用于微波辅助磁记录的磁记录头包括：主极; 设置在主极上的自旋转矩振荡器，包括高速旋转磁化层，其中磁化通过自旋转矩快速旋转; 设置在自旋扭矩振荡器上的后挡板; 以及一个磁极耦合到后屏蔽的子磁极，该副磁极设置在面向介质的表面上，该平面沿垂直方向延伸到面向介质的表面。然后，在相对于主极，后挡板或副极的磁性材料设置自旋扭矩振荡器的拖尾间隙的外侧设置非磁性电极，以防止线路电阻变化由于AMR效应或涡流。因此，可以控制流向自旋转矩振荡器的电流的变化，以实现稳定的振荡。

42. 发明申请

US20130063837A1 MAGNETIC RECORDING HEAD, MANUFACTURING METHOD THEREOF, AND MAGNETIC DISK DEVICE 有权
标题翻译：磁记录头及其制造方法及磁盘装置
公开(公告)号：US20130063837A1
公开(公告)日：2013-03-14
申请号：US13402914
申请日：2012-02-23
申请人： Yuta UDO , Katsuro Watanabe
发明人： Yuta UDO , Katsuro Watanabe
IPC分类号： G11B5/127 , G11B5/187 , G11B21/02
CPC分类号： G11B5/1278 , G11B5/187 , G11B5/3146 , G11B2005/0024 , Y10T29/49032
摘要： A magnetic recording head used for microwave-assisted magnetic recording includes: a main pole; a spin torque oscillator provided on the main pole, including a high-speed rotating magnetization layer in which the magnetization is rapidly rotated by a spin torque; a trailing shield provided on the spin torque oscillator; and a sub pole magnetically coupled to the trailing shield provided in a medium-facing surface, extending in a vertical direction to the medium-facing surface. Then, a non-magnetic electrode is provided on the outside of a trailing gap in which the spin torque oscillator is provided with respect to a magnetic material of the main pole, the trailing shield, or the sub pole, to prevent the line resistance variation due to the AMR effect or the eddy current. Thus, the variation of the current flowing to the spin torque oscillator can be controlled to achieve stable oscillation.
摘要翻译：用于微波辅助磁记录的磁记录头包括：主极; 设置在主极上的自旋转矩振荡器，包括高速旋转磁化层，其中磁化通过自旋转矩快速旋转; 设置在自旋扭矩振荡器上的后挡板; 以及一个磁极耦合到后屏蔽的子磁极，该副磁极设置在面向介质的表面上，该平面沿垂直方向延伸到面向介质的表面。然后，在相对于主极，后挡板或副极的磁性材料设置自旋扭矩振荡器的拖尾间隙的外侧设置非磁性电极，以防止线路电阻变化由于AMR效应或涡流。因此，可以控制流向自旋转矩振荡器的电流的变化，以实现稳定的振荡。

43. 发明授权

US07735213B2 Method for fabricating magnetic head slider 失效
标题翻译：制造磁头滑块的方法
公开(公告)号：US07735213B2
公开(公告)日：2010-06-15
申请号：US11845010
申请日：2007-08-24
申请人： Nobuto Yasui , Katsuro Watanabe , Takateru Seki , Kazuhito Miyata , Tetsuya Matsusaki
发明人： Nobuto Yasui , Katsuro Watanabe , Takateru Seki , Kazuhito Miyata , Tetsuya Matsusaki
IPC分类号： H04R31/00
CPC分类号： G11B5/3163 , G11B5/3169 , G11B5/3173 , G11B5/6011 , Y10T29/49021 , Y10T29/49032 , Y10T29/49041
摘要： Embodiments of the present invention provide a method of fabricating a magnetic head slider realizing high-recording density at high-yields by preventing formation of a short circuit on the air-bearing surface of a magnetic head slider and preventing formation of an oxidized layer with significant film thickness which increases the effective magnetic spacing, on the air-bearing surface of the magnetic head slider. According to one embodiment, after air-bearing surface mechanical lapping of a row bar or a magnetic head slider, cleaning is performed by ion beam bombardment to remove a conductive smear. Oxygen exposure is performed to recover a damaged region which was formed by ion beam bombardment at the end face of an intermediate layer of a magnetoresistive film 5. Thereafter, air-bearing surface protection films are formed and followed by rail formation. If the processes are performed on the row bar, the row bar is cut into individual separated magnetic head sliders.
摘要翻译：本发明的实施例提供一种制造磁头滑块的方法，其通过防止在磁头滑块的空气轴承表面上形成短路而以高产率实现高记录密度，并且防止形成具有显着性的氧化层在磁头滑块的空气轴承表面上增加有效磁间距的膜厚度。根据一个实施例，在排杆或磁头滑块的空气轴承表面机械研磨之后，通过离子束轰击进行清洁以除去导电涂片。进行氧曝光以回收在磁阻膜5的中间层的端面处通过离子束轰击形成的损伤区域。之后，形成空气轴承表面保护膜，然后形成轨道。如果在行条上执行过程，则将行条切割成单独的分离的磁头滑块。

44. 发明申请

US20100053821A1 CPP Structure Magnetoresistive Head 有权
标题翻译： CPP结构磁阻头
公开(公告)号：US20100053821A1
公开(公告)日：2010-03-04
申请号：US12547394
申请日：2009-08-25
申请人： Katsuro Watanabe , Shigeo Fujita , Norihiro Ookawa , Kenichi Meguro
发明人： Katsuro Watanabe , Shigeo Fujita , Norihiro Ookawa , Kenichi Meguro
IPC分类号： G11B5/127
CPC分类号： G01R33/093 , B82Y25/00 , G11B5/398 , G11B5/40
摘要： According to one embodiment, a magnetoresistive head has a magnetoresistive sensor film between a lower shield layer and an upper shield layer. The magnetoresistive sensor film is formed by stacking at least a pinning layer, a first ferromagnetic layer, an intermediate layer, and a second ferromagnetic layer, in which a sense current flows so as to pass through an interface between the intermediate layer and the second ferromagnetic layer, and a resistance change of the magnetoresistive sensor film in accordance with the change of an external magnetic field is detected. Also, a lateral side metal layer having an electric resistivity lower than the electric resistivity of the pinning layer is disposed at least on a side wall of the pinning layer among side walls of layers constituting the magnetoresistive sensor film, the lateral side metal layer being in contact with the lower shield layer. Other embodiments are described as well.
摘要翻译：根据一个实施例，磁阻头在下屏蔽层和上屏蔽层之间具有磁阻传感器膜。磁阻传感器膜通过堆叠至少一个感测电流流过的钉扎层，第一铁磁层，中间层和第二铁磁层形成，以便穿过中间层和第二铁磁体之间的界面层，并且检测到根据外部磁场的变化的磁阻传感器膜的电阻变化。此外，具有低于钉扎层的电阻率的电阻率的侧面金属层至少设置在构成磁阻传感器膜的层的侧壁中的钉扎层的侧壁上，侧面金属层位于与下屏蔽层接触。还描述了其它实施例。

45. 发明授权

US07280321B2 Magnetoresistive head 有权
标题翻译：磁阻头
公开(公告)号：US07280321B2
公开(公告)日：2007-10-09
申请号：US11501844
申请日：2006-08-10
申请人： Katsuro Watanabe , Kikuo Kusukawa , Kenichi Meguro
发明人： Katsuro Watanabe , Kikuo Kusukawa , Kenichi Meguro
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/313 , G11B5/3903 , G11B5/3909 , G11B5/40 , G11B2005/3996
摘要： A magnetoresistive head of a type including a magnetoresistive film arranged between a lower shield layer and an upper shield layer, wherein the lower shield layer has a non-magnetic layer adjacent to it and the lower shield layer and the upper shield layer are formed such that their separation at at least part of a boundary between the lower shield layer and the upper shield layer is larger than their separation in a vicinity of the magnetoresistive film, and an insulating film is arranged between the lower shield layer and the upper shield layer, wherein the lower shield layer and the non-magnetic layer adjacent thereto are formed such that they differ in height and there exists a difference in level at their boundary.
摘要翻译：一种包括布置在下屏蔽层和上屏蔽层之间的磁阻膜的类型的磁阻头，其中下屏蔽层具有与其相邻的非磁性层，并且形成下屏蔽层和上屏蔽层，使得它们在下屏蔽层和上屏蔽层之间的边界的至少一部分上的分离大于其在磁阻膜附近的分离，并且绝缘膜布置在下屏蔽层和上屏蔽层之间，其中形成下部屏蔽层和与其相邻的非磁性层，使得它们的高度不同，并且在其边界处存在水平差异。

46. 发明申请

US20070206333A1 Magnetoresistive head and a manufacturing method thereof 有权
标题翻译：磁阻头及其制造方法
公开(公告)号：US20070206333A1
公开(公告)日：2007-09-06
申请号：US11706152
申请日：2007-02-13
申请人： Katsuro Watanabe , Taku Shintani , Kazuhiro Ueda , Masahiro Osugi
发明人： Katsuro Watanabe , Taku Shintani , Kazuhiro Ueda , Masahiro Osugi
IPC分类号： G11B5/33
CPC分类号： G11B5/3903 , G11B5/3163 , G11B5/398
摘要： Embodiments in accordance with the present invention reduce the influence of etching damage at junction edge of a magnetoresistive film in the sensor height direction, lower the deterioration of dielectric breakdown voltage between an upper magnetic shield layer and a lower magnetic shield layer and instability of reproducing property resulting from shield process, and maintain electrostatic capacity to a small value in a CPP magnetoresistive head. In an embodiment of a magnetoresistive head of the present invention, length in the sensor height direction of bottom surface of a pinning layer is longer than the length in the sensor height direction of bottom surface of a first ferromagnetic layer. The angle formed by an edge in the sensor height direction of the pinning layer to the surface extended from a bottom surface of a magnetoresistive film is smaller than the angle formed by an edge in the sensor height direction of a second ferromagnetic layer to the surface extended from a bottom surface of the magnetoresistive film. Height of top surface of a sensor height direction refill film is equal to or higher than the top surface of the magnetoresistive film.
摘要翻译：根据本发明的实施例减小了在传感器高度方向上的磁阻膜的接合边缘处的蚀刻损伤的影响，降低了上磁屏蔽层和下磁屏蔽层之间的介电击穿电压的劣化以及再现性能的不稳定性由屏蔽过程产生，并且在CPP磁阻头中将静电容量维持在较小的值。在本发明的磁阻头的一个实施例中，钉扎层的底表面的传感器高度方向上的长度比第一铁磁层的底表面的传感器高度方向上的长度长。由钉扎层的传感器高度方向的边缘到从磁阻膜的底面延伸的表面形成的角度小于由第二铁磁层的传感器高度方向上的边缘延伸到表面延伸的角度从磁阻膜的底表面。传感器高度方向充填膜的顶表面的高度等于或高于磁阻膜的顶表面。

47. 发明申请

US20060018055A1 Magnetic head with side shield and manufacturing method thereof 失效
标题翻译：带侧面屏蔽的磁头及其制造方法
公开(公告)号：US20060018055A1
公开(公告)日：2006-01-26
申请号：US11166338
申请日：2005-06-24
申请人： Chiseki Haginoya , Masahiko Hatatani , Chiaki Ishikawa , Kenichi Meguro , Kazuhiro Nakamoto , Katsuro Watanabe
发明人： Chiseki Haginoya , Masahiko Hatatani , Chiaki Ishikawa , Kenichi Meguro , Kazuhiro Nakamoto , Katsuro Watanabe
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： G11B5/3912 , G11B5/3163
摘要： In a side shield structure employed to narrow the effective track, a noise caused by the side shield structure can be reduced. In one embodiment, the side shield is inclined with respect to the film plane to suppress the generation of a magnetic pole in the end portion of the side shield. To this end, the side face of a device is inclined at a desired angle. Further, a reproduction device is formed at two or more angles β1 and β2 to improve the track width accuracy.
摘要翻译：在用于缩小有效轨道的侧屏蔽结构中，可以减少由侧屏蔽结构引起的噪声。在一个实施例中，侧屏蔽件相对于膜平面倾斜以抑制在侧屏蔽件的端部中产生磁极。为此，装置的侧面以期望的角度倾斜。此外，再现装置形成为β1和β2两个或更多个角度以改善轨道宽度精度。

48. 发明授权

US06771535B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US06771535B2
公开(公告)日：2004-08-03
申请号：US10412423
申请日：2003-04-14
申请人： Takeshi Sakata , Satoru Hanzawa , Hideyuki Matsuoka , Katsuro Watanabe , Kenchi Ito
发明人： Takeshi Sakata , Satoru Hanzawa , Hideyuki Matsuoka , Katsuro Watanabe , Kenchi Ito
IPC分类号： G11C1100
CPC分类号： H01L27/226 , B82Y10/00 , G11C11/16
摘要： Disclosed are a fast, highly-integrated and highly-reliable magnetoresistive random access memory (MRAM) and a semiconductor device which uses the MRAM. The semiconductor device performs the read-out operation of the MRAM using memory cells for storing information by using a change in magnetoresistance of a magnetic tunnel junction (MTJ) element with a high S/N ratio. Each memory cell includes an MTJ element and a bipolar transistor. The read-out operation is carried out by selecting a word line, amplifying a current flowing in the MTJ element of a target memory cell by the bipolar transistor and outputting the-amplified current to an associated read data line.
摘要翻译：公开了一种快速，高度集成和高可靠性的磁阻随机存取存储器（MRAM）和使用MRAM的半导体器件。半导体器件使用存储单元执行MRAM的读出操作，用于通过使用具有高S / N比的磁性隧道结（MTJ）元件的磁阻的变化来存储信息。每个存储单元包括MTJ元件和双极晶体管。通过选择字线，通过双极晶体管放大在目标存储单元的MTJ元件中流动的电流并将放大的电流输出到相关联的读取数据线来执行读出操作。

49. 发明授权

US06560135B2 Magnetic semiconductor memory apparatus and method of manufacturing the same 失效
公开(公告)号：US06560135B2
公开(公告)日：2003-05-06
申请号：US09934602
申请日：2001-08-23
申请人： Hideyuki Matsuoka , Takeshi Sakata , Katsuro Watanabe , Kiyoo Itoh
发明人： Hideyuki Matsuoka , Takeshi Sakata , Katsuro Watanabe , Kiyoo Itoh
IPC分类号： G11C1702
CPC分类号： H01L27/228 , H01L27/224
摘要： Since a memory cell of a so-called MRAM utilizing a conventional tunnel magnetic resistance forms writing word lines below data lines, there are the following problems. A process becomes hard because it is necessary to execute a self-aligned contact opening process with passing through portions between the writing word lines, or since it is hard that the writing word lines sufficiently overlap with a magnetic resistance device in a planner manner due to a restriction of layout, the data writing becomes unstable. In order to solve the problems mentioned above, the present invention provides a structure of MRAM memory cell in which the writing word lines are formed above the bit lines, and a method of manufacturing the same. In accordance with the present invention, a process at a time of forming a memory cell plug becomes easy in comparison with a conventional one, there can be obtained a layout so that a magnetic field from the writing word line effectively acts on a magnetic resistance device due to the writing word line formed in an upper portion, and a stable writing can be executed.

50. 发明授权

US6157526A Magnetoresistive head and magnetic disk apparatus 失效
标题翻译：磁阻磁头和磁盘装置
公开(公告)号：US6157526A
公开(公告)日：2000-12-05
申请号：US450763
申请日：1999-11-30
申请人： Katsuro Watanabe , Takashi Kawabe , Shigeru Tadokoro , Hiroshi Kamio , Takao Imagawa
发明人： Katsuro Watanabe , Takashi Kawabe , Shigeru Tadokoro , Hiroshi Kamio , Takao Imagawa
IPC分类号： G11B5/012 , G11B5/39 , G11B5/55 , G11B5/596
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , G11B5/012 , G11B5/5526 , G11B5/59683
摘要： A magnetoresistive head in which Barkhausen noise is substantially suppressed and a variation in reproduction is minimized, and a magnetic disk apparatus using the same magnetic head have been provided. The feature of the magnetic head and the magnetic disk apparatus of the invention resides in the provision of a longitudinal bias layer which comprises a hard magnetic thin film formed on an underlayer made of either a ferromagnetic thin film having a body-centered cubic lattice crystal structure, or an amorphous ferromagnetic thin film or antiferromagnetic thin film having a body-centered cubic lattice crystal structure.
摘要翻译：巴克豪森噪声基本上被抑制并且再现的变化最小化的磁阻头，并且已经提供了使用相同磁头的磁盘装置。本发明的磁头和磁盘装置的特征在于提供一种纵向偏置层，其包括形成在由具有体心立方晶格结构结构的铁磁薄膜制成的底层上的硬磁薄膜或具有体心立方晶格结构的非晶铁磁薄膜或反铁磁薄膜。

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