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    • 41. 发明授权
    • Semiconductor integrated circuit device
    • 半导体集成电路器件
    • US07781846B2
    • 2010-08-24
    • US12348524
    • 2009-01-05
    • Kenichi OsadaMasataka MinamiShuji IkedaKoichiro Ishibashi
    • Kenichi OsadaMasataka MinamiShuji IkedaKoichiro Ishibashi
    • H01L29/76H01L27/11
    • H01L27/1104G11C11/412G11C11/417H01L27/11H01L29/4916H01L29/783Y10S257/904
    • Prior known static random access memory (SRAM) cells are required that a diffusion layer be bent into a key-like shape in order to make electrical contact with a substrate with a P-type well region formed therein, which would result in a decrease in asymmetry leading to occurrence of a problem as to the difficulty in micro-patterning. To avoid this problem, the P-type well region in which an inverter making up an SRAM cell is formed is subdivided into two portions, which are disposed on the opposite sides of an N-type well region NW1 and are formed so that a diffusion layer forming a transistor has no curvature while causing the layout direction to run in a direction parallel to well boundary lines and bit lines. At intermediate locations of an array, regions for use in supplying power to the substrate are formed in parallel to word lines in such a manner that one regions is provided per group of thirty two memory cell rows or sixty four cell rows.
    • 现有的已知的静态随机存取存储器(SRAM)单元需要将扩散层弯曲成键状形状,以便与其中形成有P型阱区的衬底进行电接触,这将导致 不对称性导致了微图案化困难的问题的发生。 为了避免这个问题,构成SRAM单元的逆变器的P型阱区被细分成两部分,它们设置在N型阱区NW1的相对侧上,并形成为扩散 形成晶体管的层没有曲率,同时使得布局方向在平行于阱边界线和位线的方向上运行。 在阵列的中间位置处,以与字线平行的方式形成用于向基板供电的区域,以每组三十二个存储单元行或六十四个单元行提供一个区域。
    • 42. 发明授权
    • Method of manufacturing a semiconductor integrated circuit device
    • 制造半导体集成电路器件的方法
    • US07615453B2
    • 2009-11-10
    • US12098312
    • 2008-04-04
    • Masataka Minami
    • Masataka Minami
    • H01L21/8236
    • H01L21/823807H01L21/823814
    • In the chip with which a plurality of MISFET from which threshold value voltage differs is intermingled, leakage current, such as GIDL current and BTBT current, is suppressed, inhibiting the short channel effect of MISFET. The concentration of the impurity for threshold value voltage adjustment implanted to the region in which n channel type MISFET with relatively low threshold value voltage is formed is made lower than the concentration of the impurity for threshold value voltage adjustment implanted to the region in which n channel type MISFET with relatively high threshold value voltage is formed. Implantation amount of the impurity at the time of forming n− type semiconductor region 19 and punch-through stopper layer 20 in region ALTN is made larger than the implantation amount of the impurity at the time of forming n− type semiconductor region 16 and punch-through stopper layer 17 in region AHTN, respectively.
    • 在其中阈值电压不同的多个MISFET与其混合的芯片中,抑制了诸如GIDL电流和BTBT电流的漏电流,从而抑制了MISFET的短沟道效应。 将形成阈值电压相对较低的n沟道型MISFET的区域中注入的阈值电压调整用杂质浓度设定为比n沟道区域注入的阈值电压调整用杂质浓度低 形成具有相对高阈值电压的MISFET型。 使区域ALTN中形成n型半导体区域19和穿通阻挡层20时的杂质的注入量大于形成n-型半导体区域16时的杂质的注入量, 分别通过区域AHTN中的阻挡层17。
    • 45. 发明申请
    • Semiconductor integrated circuit device
    • 半导体集成电路器件
    • US20060050588A1
    • 2006-03-09
    • US11261764
    • 2005-10-31
    • Kenichi OsadaMasataka MinamiShuji IkedaKoichiro Ishibashi
    • Kenichi OsadaMasataka MinamiShuji IkedaKoichiro Ishibashi
    • G11C7/00
    • H01L27/1104G11C11/412G11C11/417H01L27/11H01L29/4916H01L29/783Y10S257/904
    • Prior known static random access memory (SRAM) cells are required that a diffusion layer be bent into a key-like shape in order to make electrical contact with a substrate with a P-type well region formed therein, which would result in a decrease in asymmetry leading to occurrence of a problem as to the difficulty in micropatterning. To avoid this problem, the P-type well region in which an inverter making up an SRAM cell is formed is subdivided into two portions, which are disposed on the opposite sides of an N-type well region NW1 and are formed so that a diffusion layer forming a transistor has no curvature while causing the layout direction to run in a direction parallel to well boundary lines and bit lines. At intermediate locations of an array, regions for use in supplying power to the substrate are formed in parallel to word lines in such a manner that one regions is provided per group of thirty two memory cell rows or sixty four cell rows.
    • 现有的已知的静态随机存取存储器(SRAM)单元需要将扩散层弯曲成键状形状,以便与其中形成有P型阱区的衬底进行电接触,这将导致 不对称性导致了对微图案化困难的问题的发生。 为了避免这个问题,构成SRAM单元的逆变器的P型阱区被细分成两部分,它们设置在N型阱区NW1的相对侧上,并形成为扩散 形成晶体管的层没有曲率,同时使得布局方向在平行于阱边界线和位线的方向上运行。 在阵列的中间位置处,以与字线平行的方式形成用于向基板供电的区域,以每组三十二个存储单元行或六十四个单元行提供一个区域。
    • 47. 发明授权
    • Data processing apparatus and data recording media
    • 数据处理装置和数据记录介质
    • US06529506B1
    • 2003-03-04
    • US09414726
    • 1999-10-08
    • Masaya YamamotoTomoyuki NonomuraMasataka MinamiMasayuki Kozuka
    • Masaya YamamotoTomoyuki NonomuraMasataka MinamiMasayuki Kozuka
    • H04L1228
    • G11B20/00884G11B20/00086G11B20/1217
    • A data processing apparatus is provided with a data obtaining unit which receives a network signal sn on a network N and obtains distributed audio data Dau in which copyright information or the like is embedded, and a control unit which obtains information indicating a watermarking method which has been used when embedding the copyright information or the like in the audio data. The embedded information is extracted by an appropriate watermarking method according to the obtained information indicating the used watermarking method. The extracted information is again embedded in the distributed audio data Dau by using a predetermined watermarking method, and thus obtained audio data is recorded on a recording medium. Therefore, regardless of the watermarking method used for embedding the copyright information or the like in the distributed audio data Dau, the distributed audio data Dau can be appropriately reproduced by reproduction apparatuses as domestic electrical equipment, according to the embedded information.
    • 数据处理装置具有数据获取单元,该数据获取单元接收网络N上的网络信号sn,并获得其中嵌入有版权信息等的分布式音频数据Dau;以及控制单元,获取指示具有 当将版权信息等嵌入在音频数据中时被使用。 根据所获得的指示所使用的水印方式的信息,通过适当的水印方法提取嵌入信息。 所提取的信息通过使用预定的水印方法再次嵌入在分布式音频数据Dau中,并且由此获得的音频数据被记录在记录介质上。 因此,无论在分布式音频数据Dau中嵌入版权信息等的水印方式如何,根据嵌入信息,分布式音频数据Dau可以由作为家用电气设备的再现装置适当地再现。