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41. 发明授权

US06246098B1 Apparatus for reducing reflections off the surface of a semiconductor surface 失效
标题翻译：用于减少离开半导体表面的反射的装置
公开(公告)号：US06246098B1
公开(公告)日：2001-06-12
申请号：US08778019
申请日：1996-12-31
申请人： Mario J. Paniccia
发明人： Mario J. Paniccia
IPC分类号： H01L310232
CPC分类号： G01R31/311 , G01N21/9501 , G01N21/9505 , H01L22/12 , H01L2224/48091 , H01L2924/30107 , H01L2924/00014 , H01L2924/00
摘要： An apparatus for reducing the reflection of photons off the surface of a semiconductor device under test. In one embodiment, the present invention includes a semiconductor device comprising an integrated circuit formed on the top side of a semiconductor substrate. An anti-reflective coating is disposed over the back side of the semiconductor substrate for reducing the reflection of photons at the silicon/air interface.
摘要翻译：一种减少被测半导体器件表面的光子反射的装置。在一个实施例中，本发明包括一种半导体器件，其包括在半导体衬底的顶侧上形成的集成电路。在半导体衬底的背面设置防反射涂层，以减少硅/空气界面处光子的反射。

42. 发明授权

US08829566B2 Germanium/silicon avalanche photodetector with separate absorption and multiplication regions 有权
标题翻译：锗/硅雪崩光电探测器，具有单独的吸收和乘法区域
公开(公告)号：US08829566B2
公开(公告)日：2014-09-09
申请号：US11724805
申请日：2007-03-15
申请人： Michael T. Morse , Olufemi I. Dosunmu , Ansheng Liu , Mario J. Paniccia
发明人： Michael T. Morse , Olufemi I. Dosunmu , Ansheng Liu , Mario J. Paniccia
IPC分类号： H01L31/107 , H01L31/18 , H01L31/028 , H01L31/0312
CPC分类号： H01L31/1075 , H01L27/14629 , H01L31/028 , H01L31/0312 , H01L31/1812 , Y02E10/547
摘要： A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region.
摘要翻译：公开了一种基于半导体波导的光接收器。根据本发明的方面的装置包括吸收区域，其包括靠近第二类型的半导体区域的第一类型的半导体区域。第一类型的半导体是吸收第一波长范围内的光并且第二类型的半导体吸收在第二波长范围内的光。倍增区域被定义为接近并与吸收区域分离。乘法区域包括本征半导体区域，其中存在用于乘以在吸收区域中产生的电子的电场。

43. 发明授权

US08600237B2 Broadband radio transceiver with optical transform 有权
标题翻译：带光变换的宽带无线电收发器
公开(公告)号：US08600237B2
公开(公告)日：2013-12-03
申请号：US12976099
申请日：2010-12-22
申请人： Evan R. Green , Mario J. Paniccia , Sean M. Koehl , Richard Jones , Guy S. Anthony
发明人： Evan R. Green , Mario J. Paniccia , Sean M. Koehl , Richard Jones , Guy S. Anthony
IPC分类号： H04B10/00
CPC分类号： H04B10/2575 , H04B1/71635 , H04B1/71637 , H04B2210/006 , H04L27/2096 , H04L27/223 , H04L27/2601
摘要： A broadband receiving apparatus includes an antenna to receive a radio signal having a plurality of modulation frequencies. An amplifier drives a laser source from the broadband radio signal to produce an optical signal having a plurality of spectral components. A diffraction grating transforms the optical signal into its spectral components. An array of photo-detectors converts the spectral components into electronic signals corresponding to the plurality of modulation frequencies. A transmitting apparatus includes an array of coherent laser emitters driven by electronic signals corresponding to a plurality of modulation frequencies to produce optical signals corresponding to a plurality of spectral components. A diffraction grating inverse transforms the spectral components into a composite optical signal. A photo-detector converts the composite optical signal into a composite electronic signal including the plurality of modulation frequencies. An amplifier amplifies the composite electronic signal for transmission as a broadband radio signal.
摘要翻译：宽带接收装置包括用于接收具有多个调制频率的无线电信号的天线。放大器从宽带无线电信号驱动激光源以产生具有多个频谱分量的光信号。衍射光栅将光信号转换成其光谱分量。光检测器阵列将光谱分量转换成对应于多个调制频率的电子信号。发送装置包括由对应于多个调制频率的电子信号驱动的相干激光发射器的阵列，以产生对应于多个频谱分量的光信号。衍射光栅将光谱分量逆变换成复合光信号。光检测器将复合光信号转换成包括多个调制频率的复合电子信号。放大器放大复合电子信号作为宽带无线电信号进行传输。

44. 发明授权

US08588570B2 Two-photon-absorption-based silicon waveguide photo-power monitor 失效
标题翻译：双光子吸收型硅波导光功率监视器
公开(公告)号：US08588570B2
公开(公告)日：2013-11-19
申请号：US12895578
申请日：2010-09-30
申请人： Haisheng Rong , I-Wei Andy Hsieh , Mario J. Paniccia
发明人： Haisheng Rong , I-Wei Andy Hsieh , Mario J. Paniccia
IPC分类号： G02B6/12
CPC分类号： H01L22/14 , H01L22/34
摘要： Instead of monitoring the optical power coming out of a waveguide, a direct method of monitoring the optical power inside the waveguide without affecting device or system performance is provided. A waveguide comprises a p-i-n structure which induces a TPA-generated current and may be enhanced with reverse biasing the diode. The TPA current may be measured directly by probing metal contacts provided on the top surface of the waveguide, and may enable wafer-level testing. The p-i-n structures may be implemented at desired points throughout an integrated network, and thus allows probing of different devices for in-situ power monitor and failure analysis.
摘要翻译：提供了监视波导中的光功率而不是监视波导内的光功率而不影响设备或系统性能的直接方法。波导包括p-i-n结构，其诱导TPA产生的电流并且可以通过反向偏置二极管来增强。可以通过探测设置在波导顶表面上的金属触点直接测量TPA电流，并且可以实现晶片级测试。 p-i-n结构可以在整个集成网络中的所需点处实现，并且因此允许探测用于原位功率监测和故障分析的不同设备。

45. 发明授权

US08530818B2 Apparatus, method and system for providing reflection of an optical signal 有权
标题翻译：用于提供光信号反射的装置，方法和系统
公开(公告)号：US08530818B2
公开(公告)日：2013-09-10
申请号：US12825257
申请日：2010-06-28
申请人： John Heck , Ansheng Liu , Mario J. Paniccia
发明人： John Heck , Ansheng Liu , Mario J. Paniccia
IPC分类号： H03F3/08
CPC分类号： G02B6/4214 , G02B6/422
摘要： Techniques and architectures for providing a reflective target area of an integrated circuit die assembly. In an embodiment, a reflective bevel surface of a die allows an optical signal to be received from the direction of a side surface of a die assembly for reflection into a photodetector. In another embodiment, one or more grooves in a coupling surface of the die provide respective leverage points for aligning a target area of the bevel surface with a detecting surface of the photodetector.
摘要翻译：用于提供集成电路管芯组件的反射目标区域的技术和架构。在一个实施例中，模具的反射斜面可允许从模组件的侧表面的方向接收光信号以反射到光电检测器中。在另一个实施例中，模具的联接表面中的一个或多个凹槽提供相应的杠杆点，用于将斜面的目标区域与光电检测器的检测表面对准。

46. 发明授权

US08338857B2 Germanium/silicon avalanche photodetector with separate absorption and multiplication regions 有权
标题翻译：锗/硅雪崩光电探测器，具有单独的吸收和乘法区域
公开(公告)号：US08338857B2
公开(公告)日：2012-12-25
申请号：US12870811
申请日：2010-08-28
申请人： Michael T. Morse , Olufemi I. Dosunmu , Ansheng Liu , Mario J. Paniccia
发明人： Michael T. Morse , Olufemi I. Dosunmu , Ansheng Liu , Mario J. Paniccia
IPC分类号： H01L31/028 , H01L31/0352
CPC分类号： H01L31/1075 , H01L27/14629 , H01L31/028 , H01L31/0312 , H01L31/1812 , Y02E10/547
摘要： A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region.
摘要翻译：公开了一种基于半导体波导的光接收器。根据本发明的方面的装置包括吸收区域，其包括靠近第二类型的半导体区域的第一类型的半导体区域。第一类型的半导体是吸收第一波长范围内的光并且第二类型的半导体吸收在第二波长范围内的光。倍增区域被定义为接近并与吸收区域分离。乘法区域包括本征半导体区域，其中存在用于乘以在吸收区域中产生的电子的电场。

47. 发明申请

US20100320502A1 GERMANIUM/SILICON AVALANCHE PHOTODETECTOR WITH SEPARATE ABSORPTION AND MULTIPLICATION REGIONS 有权
标题翻译：具有单独吸收和多样化区域的锗/硅玻璃光电转换器
公开(公告)号：US20100320502A1
公开(公告)日：2010-12-23
申请号：US12870811
申请日：2010-08-28
申请人： Michael T. Morse , Olufemi I. Dosunmu , Ansheng Liu , Mario J. Paniccia
发明人： Michael T. Morse , Olufemi I. Dosunmu , Ansheng Liu , Mario J. Paniccia
IPC分类号： H01L31/107
CPC分类号： H01L31/1075 , H01L27/14629 , H01L31/028 , H01L31/0312 , H01L31/1812 , Y02E10/547
摘要： A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region.
摘要翻译：公开了一种基于半导体波导的光接收器。根据本发明的方面的装置包括吸收区域，其包括靠近第二类型的半导体区域的第一类型的半导体区域。第一类型的半导体是吸收第一波长范围内的光并且第二类型的半导体吸收在第二波长范围内的光。倍增区域被定义为接近并与吸收区域分离。乘法区域包括本征半导体区域，其中存在用于乘以在吸收区域中产生的电子的电场。

48. 发明授权

US07508576B2 Digital signal regeneration, reshaping and wavelength conversion using an optical bistable silicon raman laser 失效
标题翻译：使用光学双稳态硅拉曼激光器进行数字信号再生，整形和波长转换
公开(公告)号：US07508576B2
公开(公告)日：2009-03-24
申请号：US11040238
申请日：2005-01-20
申请人： Ansheng Liu , Mario J. Paniccia
发明人： Ansheng Liu , Mario J. Paniccia
IPC分类号： H01S3/00
CPC分类号： H01S3/30 , H01S3/063 , H01S3/0637 , H01S5/32
摘要： An optical bistable silicon Raman laser is disclosed, which provides digital signal regeneration, reshaping and wavelength conversion. An apparatus according to aspects of the present invention includes an optical waveguide disposed in semiconductor material. First and second reflectors are disposed in the optical waveguide. The first and second reflectors define a cavity in the optical waveguide. The cavity is to receive a first optical beam having a first wavelength. A power level of the first optical beam received by the cavity rising above a second power level results in emission of a second optical beam of a second wavelength from the cavity until the power level of the first optical beam received by the cavity falls below a first power level. The first power level is less than the second power level.
摘要翻译：公开了一种光学双稳态硅拉曼激光器，其提供数字信号再生，整形和波长转换。根据本发明的方面的装置包括设置在半导体材料中的光波导。第一和第二反射器设置在光波导中。第一和第二反射器限定光波导中的空腔。腔体将接收具有第一波长的第一光束。由空腔接收的第一光束的功率电平升高到高于第二功率电平，导致从空腔发射第二波长的第二光束，直到由空腔接收的第一光束的功率电平落在第一能量等级。第一功率电平小于第二功率电平。

49. 发明授权

US07233051B2 Germanium/silicon avalanche photodetector with separate absorption and multiplication regions 有权
标题翻译：锗/硅雪崩光电探测器，具有单独的吸收和乘法区域
公开(公告)号：US07233051B2
公开(公告)日：2007-06-19
申请号：US11170556
申请日：2005-06-28
申请人： Michael T. Morse , Olufemi I. Dosunmu , Ansheng Liu , Mario J. Paniccia
发明人： Michael T. Morse , Olufemi I. Dosunmu , Ansheng Liu , Mario J. Paniccia
IPC分类号： H01L31/107
CPC分类号： H01L31/1075 , H01L27/14629 , H01L31/028 , H01L31/0312 , H01L31/1812 , Y02E10/547
摘要： A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region.
摘要翻译：公开了一种基于半导体波导的光接收器。根据本发明的方面的装置包括吸收区域，其包括靠近第二类型的半导体区域的第一类型的半导体区域。第一类型的半导体是吸收第一波长范围内的光并且第二类型的半导体吸收在第二波长范围内的光。倍增区域被定义为接近并与吸收区域分离。乘法区域包括本征半导体区域，其中存在用于乘以在吸收区域中产生的电子的电场。

50. 发明授权

US06999664B2 Polarization insensitive method and apparatus for switching and modulating an optical beam 失效
标题翻译：用于切换和调制光束的偏振不敏感方法和装置
公开(公告)号：US06999664B2
公开(公告)日：2006-02-14
申请号：US10603379
申请日：2003-06-24
申请人： Remus Nicolaescu , Mario J. Paniccia
发明人： Remus Nicolaescu , Mario J. Paniccia
IPC分类号： G02F1/295 , G02B6/27
CPC分类号： G02B6/126 , G02B6/272 , G02B6/2793 , G02B6/29352 , G02F1/011 , G02F1/0136 , G02F1/025 , G02F1/3133 , G02F2001/0144 , G02F2203/06
摘要： A polarization beam splitter and combiner and a polarization insensitive modulating and switching method and apparatus. In one aspect of the present invention, the disclosed apparatus a first optical waveguide disposed in a semiconductor material layer. A second optical waveguide is also disposed in the semiconductor material layer. An insulating region is disposed between the first and second optical waveguides to provide a coupling region in the semiconductor material layer between the first and second optical waveguides. The coupling region has a first coupling length for a first polarization mode of an optical beam directed through one of the first and second optical waveguides into the coupling region. The coupling region has a second coupling length for a second polarization mode of the optical beam.
摘要翻译：偏振分束器和组合器以及偏振不敏感的调制和切换方法和装置。在本发明的一个方面，所公开的装置设置在半导体材料层中的第一光波导。第二光波导也设置在半导体材料层中。绝缘区域设置在第一和第二光波导之间，以在第一和第二光波导之间的半导体材料层中提供耦合区域。耦合区域具有用于通过第一和第二光波导中的一个引导到耦合区域中的光束的第一偏振模式的第一耦合长度。耦合区域具有用于光束的第二偏振模式的第二耦合长度。

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