会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 41. 发明申请
    • COMPOUND, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN
    • 化合物,树脂,耐蚀组合物和用于生产耐腐蚀图案的方法
    • US20110053086A1
    • 2011-03-03
    • US12873919
    • 2010-09-01
    • Kazuhiko HashimotoKoji Ichikawa
    • Kazuhiko HashimotoKoji Ichikawa
    • G03F7/004C07C69/88C07C69/96C07C69/017C08F20/10G03F7/20
    • C07C69/84C07C69/54C07C69/96C07C2603/74C08F20/30G03F7/0045G03F7/0046G03F7/0397
    • A compound of the present invention is represented by the formula (A); wherein R1 represents a hydrogen atom or a C1 to C6 alkyl group; Z1 represents a single bond, —CO—O—* or —CO—O—(CH2)k—CO—O—*; Z2 represents a single bond, *—O—CO—, *—CO—O—, *—O—(CH2)k—CO—, *—CO—(CH2)k—O—, *—O—(CH2)k—CO—O—, *—O—CO—(CH2)k—O— or *—O—CO—(CH2)k—O—CO—; k represents an integer of 1 to 6; * represents a binding position to W; W represents a C4 to C36 (n+1) valent alicyclic hydrocarbon group or a C6 to C18 (n+1) valent aromatic hydrocarbon group, one or more hydrogen atoms contained in the alicyclic hydrocarbon group and the aromatic hydrocarbon group may be replaced by a halogen atom, a C1 to C12 alkyl group, a C1 to C12 alkoxy group, a C2 to C4 acyl group or —OR10; R10 represents a hydrogen atom or a group represented by the formula (R2-2); R2 represents a hydrogen atom, a group represented by the formula (R2-1) or (R2-2); n represents an integer of 1 to 3; R4, R5 and R6 independently represent a C1 to C12 hydrocarbon group; R7 and R8 independently represent a hydrogen atom or a C1 to C12 hydrocarbon group; R9 represents a C1 to C14 hydrocarbon group.
    • 本发明的化合物由式(A)表示; 其中R1表示氢原子或C1-C6烷基; Z1表示单键,-CO-O- *或-CO-O-(CH2)k-CO-O- *; Z2表示单键,* -O-CO-,* -CO-O-,* -O-(CH2)k-CO-,* -CO-(CH2)k-O-,* -O- )k-CO-O-,* -O-CO-(CH2)k-O-或* -O-CO-(CH2)k-O-CO-; k表示1〜6的整数, *表示与W的绑定位置; W表示C 4〜C 36(n + 1)价的脂环式烃基或C 6〜C 18(n + 1)价芳香族烃基,脂环式烃基和芳香族烃基所含有的1个以上氢原子可以被 卤素原子,C1〜C12烷基,C1〜C12烷氧基,C2〜C4酰基或-OR10; R 10表示氢原子或式(R2-2)表示的基团。 R2表示氢原子,式(R2-1)或(R2-2)表示的基团; n表示1〜3的整数, R4,R5和R6独立地表示C1〜C12烃基; R7和R8独立地表示氢原子或C1〜C12烃基; R9表示C1〜C14烃基。
    • 45. 发明授权
    • Positive resist composition
    • 正抗蚀剂组成
    • US5843616A
    • 1998-12-01
    • US419604
    • 1995-04-10
    • Kunishige EdamatsuYuji YoshidaKazuhiko HashimotoHaruyoshi Osaki
    • Kunishige EdamatsuYuji YoshidaKazuhiko HashimotoHaruyoshi Osaki
    • G03F7/022C08G8/24G03F7/004G03F7/023H01L21/027
    • C08G8/24G03F7/0236
    • A positive resist composition sensitive to radiations such as ultraviolet rays, far ultraviolet rays, which comprises; an o-quinonediazide compound; and a novolac resin(1) obtained by allowing an aromatic aldehyde of the formula(I) ##STR1## wherein R.sub.4 to R.sub.6 represents hydrogen, alkyl, cycloalkyl, alkoxy, alkenyl or aryl, k'0 represents an integer not smaller than 0 and p represents 1, 2 or 3, to react with a phenol compound of the formula (II) ##STR2## wherein R.sub.7 to R.sub.9 represents hydrogen, hydroxy, alkyl, cycloalkyl, alkoxy, alkenyl or aryl, provided that at least one of R.sub.7 to R.sub.9 is cycloalkyl having 6 or less carbon atoms, in the presence of an acid catalyst to obtain a reaction product(1) containing low molecular weight ingredients; and, then, allowing the reaction product(1) to further react with a phenol compound(1) and formaldehyde.
    • 对紫外线,远紫外线等辐射敏感的正性抗蚀剂组合物,其包含: 邻醌二叠氮化合物; 和通过使式(I)的芳香醛(I)得到的酚醛清漆树脂(1),其中R4至R6表示氢,烷基,环烷基,烷氧基,烯基或芳基,k'0表示不小于 与式(II)的酚化合物反应,其中R 7至R 9表示氢,羟基,烷基,环烷基,烷氧基,烯基或芳基,条件是 在酸催化剂的存在下,R7至R9中的至少一个是具有6个或更少个碳原子的环烷基,得到含有低分子量成分的反应产物(1); 然后使反应产物(1)进一步与酚化合物(1)和甲醛反应。
    • 47. 发明授权
    • Detecting apparatus and measuring method of warm object
    • 温暖物体的检测装置和测量方法
    • US5726449A
    • 1998-03-10
    • US760865
    • 1996-12-05
    • Nobuyuki YoshiikeKazuhiko HashimotoKatsuya Morinaka
    • Nobuyuki YoshiikeKazuhiko HashimotoKatsuya Morinaka
    • G01V8/12F24F11/02G01J5/00G01J5/48G01S15/02G01S15/04G01V11/00G08B13/16G08B13/194G08B13/191
    • G01S15/04G08B13/1645G01S15/025Y10S250/01
    • A warm object detector that includes an infrared object detector and an ultrasonic object detector. A thermal image signal processor obtains thermal object information representative of a warm object in an area by processing signals from the infrared object detector. An ultrasonic processor obtains ultrasonic object information representative of an object in an area by processing signals generated by the ultrasonic object detector. Then a new object determining device determines the presence of a new object in the area by comparing ultrasonic object information supplied from the ultrasonic image signal processor at a prior time with ultrasonic object information being currently supplied by the ultrasonic image signal processor. The new object determining device provides output information representative of a determined new object. Then, a new warm object determining device determines the presence of a new warm object in the area by comparing the thermal object information obtained by the thermal image processor with the output information from the new object determining processor by overlapping the thermal object information with the output information.
    • 一种暖物体检测器,包括红外物体检测器和超声波物体检测器。 热图像信号处理器通过处理来自红外对象检测器的信号来获取表示区域中的暖物体的热物体信息。 超声波处理器通过处理由超声波物体检测器产生的信号,获得表示区域中的物体的超声波物体信息。 然后,新对象确定装置通过将超声波图像信号处理器提供的超声波对象信息与超声波图像信号处理器当前提供的超声波对象信息进行比较,来确定该区域中的新对象的存在。 新对象确定装置提供表示所确定的新对象的输出信息。 然后,新的温暖对象确定装置通过将热图像处理器获得的热对象信息与来自新对象确定处理器的输出信息进行比较,从而通过将热对象信息与输出 信息。
    • 48. 发明授权
    • Method of screening semiconductor device
    • 半导体器件的筛选方法
    • US5543334A
    • 1996-08-06
    • US356419
    • 1994-12-15
    • Ichiro YoshiiHiroyuki KamijohYoshio OzawaKikuo YamabeKazuhiko HashimotoKatsuya OkumuraKaoru Hama
    • Ichiro YoshiiHiroyuki KamijohYoshio OzawaKikuo YamabeKazuhiko HashimotoKatsuya OkumuraKaoru Hama
    • H01L21/66
    • H01L22/14H01L2924/0002
    • A method of screening a semiconductor device. A silicon wafer having gate electrodes formed on the gate oxide film is prepared. An insulating layer is deposited on the silicon wafer. Gate electrode portions of a group of transistors to be tested are exposed. A conductive layer is deposited on the silicon wafer having exposed gate electrodes. The conductive layer is patterned to be a wiring layer so that the gate electrodes of a group of the transistors can be electrically connected to each other. The chip area to be tested is irradiated with light having intensity enough to generate a required quantity of carriers in a depletion layer between a well and a substrate. A predetermined test voltage is applied between the wiring layer and the substrate of the silicon wafer during irradiation of the light to measure current flowing through the wiring layer and the gate oxide film. An abnormality of the gate oxide film can be detected on the basis of the measured current value. The screening method may be conducted before the completion of forming the gate electrodes. Further, gate electrode portions not to be used by a user may not be electrically connected to the gate electrode portions to be used.
    • 一种半导体器件的屏蔽方法。 制备在栅氧化膜上形成栅电极的硅晶片。 绝缘层沉积在硅晶片上。 待测试的一组晶体管的栅电极部分露出。 在具有暴露的栅电极的硅晶片上沉积导电层。 导电层被图案化为布线层,使得一组晶体管的栅电极可以彼此电连接。 用足够强度的光照射要测试的芯片面积,以在阱和衬底之间的耗尽层中产生所需量的载流子。 在光照射期间,在布线层和硅晶片的基板之间施加预定的测试电压,以测量流过布线层和栅氧化膜的电流。 可以基于测量的电流值来检测栅氧化膜的异常。 筛选方法可以在形成栅电极的完成之前进行。 此外,用户不使用的栅电极部分可以不与要使用的栅电极部分电连接。