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    • 49. 发明授权
    • Photoresist composition for deep UV and process thereof
    • 用于深紫外线的光致抗蚀剂组合物及其工艺
    • US07189491B2
    • 2007-03-13
    • US10734022
    • 2003-12-11
    • M. Dalil Rahman
    • M. Dalil Rahman
    • G03F7/004G03F7/30
    • G03F7/0395G03F7/0397Y10S430/106Y10S430/111
    • The present invention relates to a novel photoresist composition sensitive to radiation in the deep ultraviolet and a process for imaging the composition. The photoresist composition comprises a) a novel polymer that is insoluble in an aqueous alkaline solution and comprises at least one acid labile group, and b) a compound capable of producing an acid upon irradiation. The novel polymer of the present invention comprises at least one unit with a bisester group, (—C(O)OWC(O)O—), attached on one side to a polymer backbone unit (A) comprising an aliphatic group, and attached on the other side to an adamantyl group. The invention also relates to the novel polymer and a novel monomer for obtaining the novel polymer.
    • 本发明涉及对深紫外线辐射敏感的新型光致抗蚀剂组合物和用于对组合物进行成像的方法。 光致抗蚀剂组合物包含:a)不溶于碱性水溶液并包含至少一种酸不稳定基团的新型聚合物,和b)在照射时能够产生酸的化合物。 本发明的新型聚合物包含至少一个具有双酯基团的单元,(-C(O)OWC(O)O-),一侧连接到包含脂族基团的聚合物主链单元(A)上,并附着 另一方面是金刚烷基。 本发明还涉及新型聚合物和用于获得新型聚合物的新型单体。