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    • 43. 发明授权
    • High availability memory system
    • 高可用性内存系统
    • US08086783B2
    • 2011-12-27
    • US12390731
    • 2009-02-23
    • James A. O'ConnorKevin C. GowerLuis A. Lastras-MontanoWarren E. Maule
    • James A. O'ConnorKevin C. GowerLuis A. Lastras-MontanoWarren E. Maule
    • G06F12/00
    • G06F11/1004G06F12/0886
    • A memory system with high availability is provided. The memory system includes multiple memory channels. Each memory channel includes at least one memory module with memory devices organized as partial ranks coupled to memory device bus segments. Each partial rank includes a subset of the memory devices accessible as a subchannel on a subset of the memory device bus segments. The memory system also includes a memory controller in communication with the multiple memory channels. The memory controller distributes an access request across the memory channels to access a full rank. The full rank includes at least two of the partial ranks on separate memory channels. Partial ranks on a common memory module can be concurrently accessed. The memory modules can use at least one checksum memory device as a dedicated checksum memory device or a shared checksum memory device between at least two of the concurrently accessible partial ranks.
    • 提供了高可用性的内存系统。 存储器系统包括多个存储器通道。 每个存储器通道包括至少一个存储器模块,其中存储器件被组织为耦合到存储器设备总线段的部分等级。 每个部分等级包括作为存储器设备总线段的子集上的子信道可访问的存储器件的子集。 存储器系统还包括与多个存储器通道通信的存储器控​​制器。 存储器控制器通过存储器通道分配访问请求以访问完整等级。 完整等级包括在独立内存通道上的至少两个部分等级。 可以同时访问公共内存模块上的部分排名。 存储器模块可以在至少两个可同时访问的部分等级之间使用至少一个校验和存储器设备作为专用校验和存储器设备或共享校验和存储器设备。
    • 45. 发明申请
    • NON-VOLATILE MEMORIES WITH ENHANCED WRITE PERFORMANCE AND ENDURANCE
    • 具有增强的写性能和耐用性的非易失性存储器
    • US20110138105A1
    • 2011-06-09
    • US12631505
    • 2009-12-04
    • Michele M. FranceschiniAshish JagmohanLuis A. Lastras-MontanoMayank Sharma
    • Michele M. FranceschiniAshish JagmohanLuis A. Lastras-MontanoMayank Sharma
    • G06F12/02G06F12/00
    • G06F12/0246
    • Enhanced write performance for non-volatile memories including a memory system that includes a receiver for receiving a data rate of a data sequence to be written to a non-volatile flash memory device. The memory system also includes a physical page selector for selecting a physical address of an invalid previously written memory page from a group of physical addresses of invalid previously written memory pages located on the non-volatile memory device, and for determining if the number of free bits in the invalid previously written memory page at the selected physical address is greater than or equal to the data rate. The memory system also includes a transmitter for outputting the selected physical address of the invalid previously written memory page, the outputting in response to the physical page selector determining that the number of free bits is greater than or equal to the data rate.
    • 对于非易失性存储器的增强的写入性能,包括存储器系统,该存储器系统包括用于接收要写入非易失性闪速存储器件的数据序列的数据速率的接收器。 存储器系统还包括物理页面选择器,用于从位于非易失性存储器设备上的无效的先前写入的存储器页面的一组物理地址中选择无效的先前写入的存储器页面的物理地址,并且用于确定是否有空闲数量 在所选物理地址处的无效的先前写入的存储器页中的位大于或等于数据速率。 存储器系统还包括用于输出无效的先前写入的存储器页面的所选物理地址的发射器,响应于物理页选择器确定空闲位的数量大于或等于数据速率的输出。