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41. 发明授权

US5923951A Method of making a flip-chip bonded GaAs-based opto-electronic device 失效
标题翻译：制造倒装芯片接合GaAs基光电器件的方法
公开(公告)号：US5923951A
公开(公告)日：1999-07-13
申请号：US688131
申请日：1996-07-29
申请人： Keith Wayne Goossen , Jenn-Ming Kuo , Yu-Chi Wang
发明人： Keith Wayne Goossen , Jenn-Ming Kuo , Yu-Chi Wang
IPC分类号： H01L23/12 , H01L21/20 , H01L21/306 , H01L25/16 , H01L31/02 , H01L33/00
CPC分类号： H01L25/167 , H01L21/30612 , H01L21/02395 , H01L21/02461 , H01L21/02546 , H01L2924/0002
摘要： In a method of making a flip-chip bonded GaAs-based opto-electronic device, removal of the GaAs substrate is facilitated by provision of a lattice matched (Al.sub.x Ga.sub.1-x)InP etch stop layer, exemplarily a Ga.sub.0.51 In.sub.0.49 P layer, and use of an etchant that isotropically etches GaAs such that an essentially mirror-like etch stop layer surface results, and that preferably exhibits an etch rate ratio of at least 200:1 for GaAs and the etch stop layer, respectively. Use of the novel substrate removal method can substantially increase device yield, and facilitate manufacture of large device arrays, e.g., arrays of detector/modulator diodes flip-chip bonded to Si CMOS chips.
摘要翻译：在制造倒装芯片接合的GaAs基光电器件的方法中，通过提供晶格匹配（Al x Ga 1-x）InP蚀刻停止层，例如Ga 0.51 In 0.49P层，便于去除GaAs衬底，以及使用各向同性蚀刻GaAs的蚀刻剂，使得基本上形成镜像的蚀刻停止层表面，并且优选地分别对GaAs和蚀刻停止层表现出至少200:1的蚀刻速率比。使用新颖的基板去除方法可以显着提高器件产量，并且便于制造大型器件阵列，例如与Si CMOS芯片接合的检测器/调制器二极管阵列。

42. 发明授权

US5914804A Double-cavity micromechanical optical modulator with plural multilayer mirrors 失效
标题翻译：具有多层多层反射镜的双腔微机械光学调制器
公开(公告)号：US5914804A
公开(公告)日：1999-06-22
申请号：US14983
申请日：1998-01-28
申请人： Keith Wayne Goossen
发明人： Keith Wayne Goossen
IPC分类号： G02B1/10 , G02B26/00 , G02B26/02 , G02B26/08
CPC分类号： G02B5/0825 , G02B26/001 , G02B26/02 , G02B5/0841
摘要： A mechanical modulator is provided that includes a conductive substrate and at least three multilayer mirrors disposed on the substrate. The mirrors are spaced apart from one another to define upper and lower optical cavities. The upper cavity is formed by an airgap having a variable thickness. The multilayer mirror located above the airgap includes a conductive membrane having an optically transparent portion and a flexible support for orienting the membrane in a first position. Under the action of a bias, the membrane moves to a second position, changing the air gap by a fraction of a wavelength of the optical signal, as measured in air. The change in position of the membrane from the first to the second position causes a change in the total reflectivity of the modulator from a minimum to a maximum value.
摘要翻译：提供了一种机械调制器，其包括导电基板和设置在基板上的至少三个多层反射镜。镜子彼此间隔开以限定上部和下部光学腔。上腔由具有可变厚度的气隙形成。位于气隙上方的多层反射镜包括具有光学透明部分的导电膜和用于将膜定向在第一位置的柔性支撑件。在偏置的作用下，膜移动到第二位置，如空气中测量的那样，将气隙改变光信号波长的一小部分。膜从第一位置到第二位置的位置变化导致调制器的总反射率从最小值到最大值的变化。

43. 发明授权

US5900983A Level-setting optical attenuator 失效
标题翻译：电平设置光衰减器
公开(公告)号：US5900983A
公开(公告)日：1999-05-04
申请号：US916859
申请日：1997-08-22
申请人： Joseph E. Ford , Keith Wayne Goossen
发明人： Joseph E. Ford , Keith Wayne Goossen
IPC分类号： G02B6/02 , G02B6/26 , G02B6/35 , G02B27/10 , G02B6/00 , G02B13/22
CPC分类号： G02B6/266 , G02B6/02076 , G02B6/3514 , G02B6/3588 , G02B6/3594
摘要： A level-setting attenuator for generating an output signal having a predetermined optical power from an input optical signal having a varying power is disclosed. The level-setting attenuator includes a telecentric imaging device, a variable atttenuator, an optical power detector and control electronics. The telecentric imaging device collimates a received optical signal which is received and partially attenuated by the variable attenuator. In some embodiments, the variable attenuator generates an attenuated signal portion and an unattenuated signal portion. The attenuated signal is directed, by the variable attenuator, to an optical power detector operable to measure the power of the attenuated optical signal. The detector sends a signal indicative of the measurement to control electronics. The control electronics are operable to generate a control signal for controlling the attenuation of the unattenuated signal portion so that is has the predetermined power level. The unattenuated signal portion is coupled, via the telecentric imaging device, into an output fiber.
摘要翻译：公开了一种用于从具有变化的功率的输入光信号产生具有预定光功率的输出信号的电平设置衰减器。电平设置衰减器包括一个远心成像装置，一个可变的监控器，一个光功率检测器和控制电子装置。远心成像装置对接收到的可变衰减器接收并部分衰减的光信号进行准直。在一些实施例中，可变衰减器产生衰减的信号部分和未衰减的信号部分。衰减信号由可变衰减器引导到可用于测量衰减的光信号的功率的光功率检测器。检测器将指示测量的信号发送到控制电子装置。控制电子装置可操作以产生用于控制未衰减信号部分的衰减的控制信号，使其具有预定的功率电平。未衰减的信号部分经由远心成像装置耦合到输出光纤中。

44. 发明授权

US5735950A Method for producing a precise alloy composition from input variables under nonlinear incorporation conditions 失效
标题翻译：在非线性掺入条件下从输入变量产生精确合金组成的方法
公开(公告)号：US5735950A
公开(公告)日：1998-04-07
申请号：US653086
申请日：1996-05-24
申请人： John Edward Cunningham , Keith Wayne Goossen
发明人： John Edward Cunningham , Keith Wayne Goossen
IPC分类号： C30B23/08 , C30B29/40 , H01L21/20 , H01L21/203 , H01L31/18 , C30B25/16
CPC分类号： H01L31/184 , Y02E10/544
摘要： A process for manufacturing precise alloy compositions in nonlinear alloy systems. The invention implements a new quadratic fitting function that relates alloy composition c.sub.A for a variable A to input fluxes f.sub.A and f.sub.B, as c.sub.A =f.sub.A.sup.2 /(f.sub.A.sup.2 +/.beta.f.sub.B.sup.2). .beta. is a parameter that is used to modify the incorporation of the Group V input variable B. This modification is necessary because of different surface populations of Group V dimer species. This new fitting function precisely predicts alloy compositions in nonlinear systems, such as the GaAs.sub.l-y P.sub.y system, where y is set equal to the composition c.sub.A.
摘要翻译：一种在非线性合金系统中制造精密合金组成的方法。本发明实现了一种新的二次拟合函数，其将变量A的合金组成cA与输入通量fA和fB相关联，如cA = fA2 /（fA2 + /βfB2）。 β是用于修改V组输入变量B的并入的参数。由于V族二聚体物种的不同表面积，这种修饰是必需的。这种新的拟合函数精确地预测非线性系统中的合金组成，例如GaAs1-yPy系统，其中y被设定为等于组成cA。

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