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41. 发明授权

US08258757B2 Charging method and charging device for charging a rechargeable battery 失效
标题翻译：充电方法和充电器为充电电池充电
公开(公告)号：US08258757B2
公开(公告)日：2012-09-04
申请号：US12785145
申请日：2010-05-21
申请人： Chung-Hsing Chang , Wen-Yi Chen , Chia-Liang Lin
发明人： Chung-Hsing Chang , Wen-Yi Chen , Chia-Liang Lin
IPC分类号： H01M10/44 , H01M10/46
CPC分类号： H02J7/0083
摘要： A charging method fit for use with and applicable to a rechargeable battery is provided. The charging method involves charging the rechargeable battery to a first preset voltage and then charging the rechargeable battery to a second preset voltage. The charging method includes the steps of: (a) using the first preset current as a charging current, and performing the constant current charging of the rechargeable battery by the first preset current until the rechargeable battery reaches the first preset voltage for the first instance; (b) subtracting a current difference value from the charging current used by the rechargeable battery to reach the first preset voltage in the preceding instance so as to obtain a new charging current, and performing the constant current charging of the rechargeable battery by the new charging current thus obtained until the rechargeable battery reaches the first preset voltage again; (c) repeating step (b) until the new charging current equals a second preset current; and step (d) using the second preset current of step (c) as another new charging current, and performing the constant current charging of the rechargeable battery by the second preset current until the rechargeable battery reaches a second preset voltage for the first instance.
摘要翻译：提供适用于可充电电池的充电方法。充电方法包括将可再充电电池充电到第一预设电压，然后将可再充电电池充电到第二预设电压。充电方法包括以下步骤：（a）使用第一预置电流作为充电电流，并且通过第一预设电流执行可再充电电池的恒定电流充电直到可再充电电池首次达到第一预置电压; （b）从先前的例子中减去由可再充电电池使用的充电电流达到第一预设电压的电流差值，以获得新的充电电流，并通过新充电来执行可再充电电池的恒定电流充电直到可再充电电池再次达到第一预置电压为止; （c）重复步骤（b），直到新的充电电流等于第二预设电流; 和步骤（d）使用步骤（c）的第二预设电流作为另一新的充电电流，并且通过第二预设电流执行可再充电电池的恒定电流充电，直到可再充电电池达到第一预定电压为止。

42. 发明授权

US08227150B2 Holographic reticle and patterning method 有权
标题翻译：全息掩模版和图案化方法
公开(公告)号：US08227150B2
公开(公告)日：2012-07-24
申请号：US12768405
申请日：2010-04-27
申请人： Shih-Ming Chang , Chung-Hsing Chang , Wen-Chuan Wang , Chi-Lun Lu , Sheng-Chi Chin , Chin-Hsiang Lin , Chun-Kuang Chen
发明人： Shih-Ming Chang , Chung-Hsing Chang , Wen-Chuan Wang , Chi-Lun Lu , Sheng-Chi Chin , Chin-Hsiang Lin , Chun-Kuang Chen
IPC分类号： G03F1/00 , G03C5/00
CPC分类号： G03F1/14 , G03F1/50 , G03F7/70283 , G03F7/70416 , G03H1/0005 , G03H1/0244 , G03H1/08 , G03H1/2205 , G03H2001/0094 , G03H2001/0833 , G03H2210/30 , G03H2224/04 , G03H2240/12 , G03H2240/13 , G03H2240/23 , G03H2270/52
摘要： A hologram reticle and method of patterning a target. A layout pattern for an image to be transferred to a target is converted into a holographic representation of the image. A hologram reticle is manufactured that includes the holographic representation. The hologram reticle is then used to pattern the target. Three-dimensional patterns may be formed in a photoresist layer of the target in a single patterning step. These three-dimensional patterns may be filled to form three-dimensional structures or else used in a multi-surface imaging composition. The holographic representation of the image may also be transferred to a top photoresist layer of a top surface imaging (TSI) semiconductor device, either directly or using the hologram reticle. The top photoresist layer may then be used to pattern an underlying photoresist layer with the image. The lower photoresist layer is used to pattern a material layer of the device.
摘要翻译：全息图掩模版和图案化目标的方法。要传输到目标的图像的布局图案被转换成图像的全息图。制造包括全息图的全息标线。然后使用全息图标线来对目标进行图案化。可以在单个图案化步骤中在靶的光致抗蚀剂层中形成三维图案。这些三维图案可以被填充以形成三维结构，或者用于多表面成像组合物中。图像的全息图也可以直接地或使用全息图掩模图传递到顶表面成像（TSI）半导体器件的顶部光致抗蚀剂层。然后可以使用顶部光致抗蚀剂层来用图像对下面的光致抗蚀剂层进行图案化。下部光致抗蚀剂层用于对该器件的材料层进行图案化。

43. 发明申请

US20100297538A1 Holographic Reticle and Patterning Method 有权
标题翻译：全息光罩和图案化方法
公开(公告)号：US20100297538A1
公开(公告)日：2010-11-25
申请号：US12768405
申请日：2010-04-27
申请人： Shih-Ming Chang , Chung-Hsing Chang , Wen-Chuan Wang , Chi-Lun Lu , Sheng-Chi Chin , Chin-Hsiang Lin , Chun-Kuang Chen
发明人： Shih-Ming Chang , Chung-Hsing Chang , Wen-Chuan Wang , Chi-Lun Lu , Sheng-Chi Chin , Chin-Hsiang Lin , Chun-Kuang Chen
IPC分类号： G03F7/20 , G03F1/00
CPC分类号： G03F1/14 , G03F1/50 , G03F7/70283 , G03F7/70416 , G03H1/0005 , G03H1/0244 , G03H1/08 , G03H1/2205 , G03H2001/0094 , G03H2001/0833 , G03H2210/30 , G03H2224/04 , G03H2240/12 , G03H2240/13 , G03H2240/23 , G03H2270/52
摘要： A hologram reticle and method of patterning a target. A layout pattern for an image to be transferred to a target is converted into a holographic representation of the image. A hologram reticle is manufactured that includes the holographic representation. The hologram reticle is then used to pattern the target. Three-dimensional patterns may be formed in a photoresist layer of the target in a single patterning step. These three-dimensional patterns may be filled to form three-dimensional structures or else used in a multi-surface imaging composition. The holographic representation of the image may also be transferred to a top photoresist layer of a top surface imaging (TSI) semiconductor device, either directly or using the hologram reticle. The top photoresist layer may then be used to pattern an underlying photoresist layer with the image. The lower photoresist layer is used to pattern a material layer of the device.
摘要翻译：全息图掩模版和图案化目标的方法。要传输到目标的图像的布局图案被转换成图像的全息图。制造包括全息图的全息标线。然后使用全息图标线来对目标进行图案化。可以在单个图案化步骤中在靶的光致抗蚀剂层中形成三维图案。这些三维图案可以被填充以形成三维结构，或者用于多表面成像组合物中。图像的全息图也可以直接地或使用全息图掩模图传递到顶表面成像（TSI）半导体器件的顶部光致抗蚀剂层。然后可以使用顶部光致抗蚀剂层来用图像对下面的光致抗蚀剂层进行图案化。下部光致抗蚀剂层用于对该器件的材料层进行图案化。

44. 发明授权

US07722997B2 Holographic reticle and patterning method 有权
标题翻译：全息掩模版和图案化方法
公开(公告)号：US07722997B2
公开(公告)日：2010-05-25
申请号：US11939790
申请日：2007-11-14
申请人： Shih-Ming Chang , Chung-Hsing Chang , Chih-Cheng Chin , Wen-Chuan Wang , Chi-Lun Lu , Sheng-Chi Chin , Chin-Hsiang Lin
发明人： Shih-Ming Chang , Chung-Hsing Chang , Chih-Cheng Chin , Wen-Chuan Wang , Chi-Lun Lu , Sheng-Chi Chin , Chin-Hsiang Lin
IPC分类号： G03F1/00 , G03H1/02
CPC分类号： G03F7/70291 , G03F1/50 , G03H1/0005 , G03H1/0244 , G03H1/0808 , G03H1/2205 , G03H2001/0094 , G03H2001/0833 , G03H2210/30 , G03H2210/452 , G03H2224/04 , G03H2240/12 , G03H2240/13 , G03H2240/23 , G03H2270/52
摘要： A hologram reticle and method of patterning a target. A layout pattern for an image to be transferred to a target is converted into a holographic representation of the image. A hologram reticle is manufactured that includes the holographic representation. The hologram reticle is then used to pattern the target. Three-dimensional patterns may be formed in a photoresist layer of the target in a single patterning step. These three-dimensional patterns may be filled to form three-dimensional structures. The holographic representation of the image may also be transferred to a top photoresist layer of a top surface imaging (TSI) semiconductor device, either directly or using the hologram reticle. The top photoresist layer may then be used to pattern an underlying photoresist layer with the image. The lower photoresist layer is used to pattern a material layer of the device.
摘要翻译：全息图掩模版和图案化目标的方法。要传输到目标的图像的布局图案被转换成图像的全息图。制造包括全息图的全息标线。然后使用全息图标线来对目标进行图案化。可以在单个图案化步骤中在靶的光致抗蚀剂层中形成三维图案。可以填充这些三维图案以形成三维结构。图像的全息图也可以直接地或使用全息图掩模图传递到顶表面成像（TSI）半导体器件的顶部光致抗蚀剂层。然后可以使用顶部光致抗蚀剂层来用图像对下面的光致抗蚀剂层进行图案化。下部光致抗蚀剂层用于对该器件的材料层进行图案化。

45. 发明授权

US07312021B2 Holographic reticle and patterning method 有权
标题翻译：全息掩模版和图案化方法
公开(公告)号：US07312021B2
公开(公告)日：2007-12-25
申请号：US10792084
申请日：2004-03-03
申请人： Shih-Ming Chang , Chung-Hsing Chang , Chih-Cheng Chin , Wen-Chuan Wang , Chi-Lun Lu , Sheng-Chi Chin , Chin-Hsiang Lin
发明人： Shih-Ming Chang , Chung-Hsing Chang , Chih-Cheng Chin , Wen-Chuan Wang , Chi-Lun Lu , Sheng-Chi Chin , Chin-Hsiang Lin
IPC分类号： G03C5/00 , G03F1/00
CPC分类号： G03F7/70291 , G03F1/50 , G03H1/0005 , G03H1/0244 , G03H1/0808 , G03H1/2205 , G03H2001/0094 , G03H2001/0833 , G03H2210/30 , G03H2210/452 , G03H2224/04 , G03H2240/12 , G03H2240/13 , G03H2240/23 , G03H2270/52
摘要： A hologram reticle and method of patterning a target. A layout pattern for an image to be transferred to a target is converted into a holographic representation of the image. A hologram reticle is manufactured that includes the holographic representation. The hologram reticle is then used to pattern the target. Three-dimensional patterns may be formed in a photoresist layer of the target in a single patterning step. These three-dimensional patterns may be filled to form three-dimensional structures. The holographic representation of the image may also be transferred to a top photoresist layer of a top surface imaging (TSI) semiconductor device, either directly or using the hologram reticle. The top photoresist layer may then be used to pattern an underlying photoresist layer with the image. The lower photoresist layer is used to pattern a material layer of the device.
摘要翻译：全息图掩模版和图案化目标的方法。要传输到目标的图像的布局图案被转换成图像的全息图。制造包括全息图的全息标线。然后使用全息图标线来对目标进行图案化。可以在单个图案化步骤中在靶的光致抗蚀剂层中形成三维图案。可以填充这些三维图案以形成三维结构。图像的全息图也可以直接地或使用全息图掩模图传递到顶表面成像（TSI）半导体器件的顶部光致抗蚀剂层。然后可以使用顶部光致抗蚀剂层来用图像对下面的光致抗蚀剂层进行图案化。下部光致抗蚀剂层用于对该器件的材料层进行图案化。

46. 发明授权

US06982135B2 Pattern compensation for stitching 失效
标题翻译：拼接图案补偿
公开(公告)号：US06982135B2
公开(公告)日：2006-01-03
申请号：US10402590
申请日：2003-03-28
申请人： Chung-Hsing Chang , Chien-Hung Lin , Burn J. Lin , Chia-Hui Lin , Chih-Cheng Chin , Chin-Hsiang Lin , Fu-Jye Liang , Jeng-Horng Chen , Bang-Ching Ho
发明人： Chung-Hsing Chang , Chien-Hung Lin , Burn J. Lin , Chia-Hui Lin , Chih-Cheng Chin , Chin-Hsiang Lin , Fu-Jye Liang , Jeng-Horng Chen , Bang-Ching Ho
IPC分类号： G03F9/00 , G03F7/20
CPC分类号： G03F1/20 , G03B27/42 , G03F1/00 , G03F7/70475
摘要： A method for transferring a pattern from a mask to a substrate (or wafer), comprises dividing a mask generation data file into a plurality of segments. The segments include a main pattern area and a stitching area. Each stitching area contains a respective common pattern. An image of an illuminated portion of the main pattern area is formed. Connection ends of the segments in a substrate area (or wafer area) are illuminated with an illumination beam. An image of the illuminated portion of the main pattern area is formed, and a halftone gray level dosage distribution is produced in the substrate area (or wafer area) corresponding to the common pattern. The common patterns of adjacent segments substantially overlap in the substrate area (or wafer area).
摘要翻译：将图案从掩模转印到基板（或晶片）的方法包括将掩模生成数据文件分割成多个段。片段包括主图案区域和缝合区域。每个缝合区域包含各自的共同图案。形成主图案区域的照明部分的图像。衬底区域（或晶片区域）中的段的连接端用照明光束照射。形成主图案区域的照明部分的图像，并且在对应于共同图案的基板区域（或晶片区域）中产生半色调灰度级剂量分布。相邻段的共同图案在衬底区域（或晶片区域）中基本上重叠。

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