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    • 41. 发明授权
    • In situ, non-destructive CVD surface monitor
    • 原位,无损CVD表面监测
    • US5386121A
    • 1995-01-31
    • US173314
    • 1993-12-23
    • Steven G. BarbeeTony F. HeinzLeping LiVictor J. Silvestri
    • Steven G. BarbeeTony F. HeinzLeping LiVictor J. Silvestri
    • C23C16/52G01N21/55G01N21/09
    • C23C16/52G01N21/552
    • A non-intrusive, in-situ monitoring technique and apparatus is used for evaluating the presence and extent of a critical contaminating or passivating layer on a transparent sample, prior to a subsequent process step. A multiple internal reflection apparatus and method without the need for aligning mirrors reduces the time to maximize the light intensity through the sample and to the detector and eliminates the intensity loss due to reflection from each mirror. The technique and apparatus can be used to monitor for a critical hydrogen passivation layer so that it is maintained on the silicon surface right up to the point at which the reactants are introduced for the deposition. The in-situ monitoring and process control technique uses Fourier Transform Infrared Spectroscopy with Multiple Internal Reflections (FTIRS-MIR) which looks at the Si--H bond vibration. Apparatus implementing the technique provides a means of insuring reproducibility in films through direct monitoring of the passivating layer. The technique can be utilized in UHV Chemical Vapor Deposition (CVD) Low Pressure CVD (LPCVD), mid-pressure and atmospheric Chemical Vapor Deposition (CVD) systems. The technique provides a powerful experimental technique for correlating imposed experimental conditions with the presence or destruction of the passivation and the subsequent film quality obtained. The method is applicable to any portion of the electromagnetic spectrum for which the sample is transparent and internally reflecting with the absorption of energy at the sample's surface attributable to any species of interest that can be detected.
    • 在随后的处理步骤之前,使用非侵入式原位监测技术和装置来评估透明样品上临界污染或钝化层的存在和程度。 不需要对准反射镜的多重内反射装置和方法减少了通过样品和检测器使光强度最大化的时间,并消除了由于每个反射镜的反射引起的强度损失。 该技术和装置可用于监测临界氢钝化层,使得其保持在硅表面上直到引入反应物用于沉积的点。 原位监测和过程控制技术使用具有多重内部反射(FTIRS-MIR)的傅里叶变换红外光谱,其观察Si-H键振动。 实施该技术的装置提供了通过直接监测钝化层来确保膜再现性的方法。 该技术可用于特高压化学气相沉积(CVD)低压CVD(LPCVD),中压和大气化学气相沉积(CVD)系统。 该技术提供了强大的实验技术,用于将施加的实验条件与钝化的存在或破坏以及获得的随后的膜质量相关联。 该方法适用于电磁谱的任何部分,其中样品是透明的并且内部反射,其中能够在样品表面处吸收可归因于可以检测的任何感兴趣的物质。
    • 42. 发明授权
    • Interferometer for in situ measurement of thin film thickness changes
    • 干涉仪用于原位测量薄膜厚度变化
    • US5220405A
    • 1993-06-15
    • US811506
    • 1991-12-20
    • Steven G. BarbeeLeping LiVictor J. Silvestri
    • Steven G. BarbeeLeping LiVictor J. Silvestri
    • G01B9/02G01B11/00G01B11/06H01L21/306H01L21/66H01S3/00
    • G01B11/0675
    • An interferometer 10 for measuring the position of the process surface 21 of a substrate 20 includes a coherent light source 12 for providing a light beam 14 which is partially transmitted and partially reflected by a beam splitter 16. The reflected light beam 18 is reflected off of the process surface 21 and the transmitted light beam 30 is reflected off of a translator 32 which vibrates a predetermined distance at a predetermined frequency. The phase shift between the light beams 22, 31 reflected off of translator 32 and the process surface 21 is measured using a photodetector 24, which provides an output signal 26 to a feedback servo unit 28. The servo unit 28 provides an output signal 38 which controls the vibration of translator 32. The output signal 38 of servo unit 28 is also indicative of the position of the process surface 21.
    • 用于测量衬底20的处理表面21的位置的干涉仪10包括相干光源12,用于提供被分束器16部分透射和部分反射的光束14.反射光束18被反射离开 处理表面21和透射光束30从以预定频率振动预定距离的平移器32反射。 使用光电检测器24测量从平移器32和处理表面21反射的光束22,31之间的相移,光电检测器24向反馈伺服单元28提供输出信号26.伺服单元28提供输出信号38, 控制转换器32的振动。伺服单元28的输出信号38也指示处理表面21的位置。
    • 50. 发明授权
    • Endpoint detection in chemical-mechanical polishing of patterned wafers having a low pattern density
    • 具有低图案密度的图案化晶片的化学机械抛光中的端点检测
    • US06835117B1
    • 2004-12-28
    • US10707120
    • 2003-11-21
    • Xinhui WangLeping LiYingru GuHung-Chin Guthrie
    • Xinhui WangLeping LiYingru GuHung-Chin Guthrie
    • B24B4900
    • B24B37/013B24B49/00B24B57/02
    • A chemical-mechanical polishing (CMP) system and method includes pumping polishing slurry from a CMP apparatus through a sampling tube to an endpoint detection apparatus during a polishing operation, and flushing the sampling tube while a polishing operation is not in progress. The flushing of the sampling tube is commenced in accordance with a control signal from the endpoint detection apparatus terminating the polishing operation; the flushing is terminated in accordance with a starting signal to the CMP apparatus. The pump, which pumps a sample of slurry into the endpoint detection apparatus, continuously pumps slurry and/or water. Clogging of the slurry sampling tube is thus eliminated, thereby ensuring robust operation of the CMP apparatus. Contamination of the sampling tube is also avoided, so that the system may reliably provide sensitive endpoint detection and process control, even when a film of low pattern density is polished.
    • 化学机械抛光(CMP)系统和方法包括在抛光操作期间将抛光浆料从CMP装置通过采样管泵送到端点检测装置,并且在抛光操作未进行时冲洗采样管。 取样管的冲洗是根据来自终点检测装置的终止抛光操作的控制信号开始的; 根据到CMP设备的启动信号来终止冲洗。 将浆料样品泵入端点检测装置的泵连续地泵送浆液和/或水。 因此消除了浆料采样管的堵塞,从而确保CMP设备的稳定操作。 也避免了采样管的污染,使得系统可以可靠地提供敏感的端点检测和过程控制,即使当低图案密度的膜被抛光时。