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    • 43. 发明授权
    • Semiconductor transducer
    • 半导体传感器
    • US4680606A
    • 1987-07-14
    • US617122
    • 1984-06-04
    • James W. KnuttiHenry V. AllenKurt E. PetersenCarl R. Kowalski
    • James W. KnuttiHenry V. AllenKurt E. PetersenCarl R. Kowalski
    • G01L9/04G01L1/18H01L29/84G01B7/16
    • G01L1/18
    • A semiconductor transducer (10) including a substrate having a well (18) formed in one surface thereof and a semiconductor layer (14) having a first surface (26) bonded to the substrate about the periphery of the well to form a diaphragm (30) and a second surface (28) which is substantially coplanar to the first surface and has a pedestal (16) projecting therefrom which is disposed above the well. The side walls (32) of the pedestal are substantially orthogonal to the second surface of the semiconductor layer. Means (34) are provided for sensing the deflection of the diaphragm as a function of force applied to the pedestal. The substrate includes protrusions (38) which extend upward from the bottom of the well to limit the deflection of the diaphragm.
    • 一种半导体传感器(10),包括在其一个表面中形成有阱(18)的基板和具有围绕所述阱的周边结合到所述基板的第一表面(26)的半导体层(14),以形成隔膜(30) )和第二表面(28),所述第二表面(28)基本上与所述第一表面共面并且具有设置在所述阱上方的从其突出的基座(16)。 基座的侧壁(32)基本上正交于半导体层的第二表面。 提供装置(34)用于感测作为施加到基座的力的函数的振动膜的偏转。 衬底包括从井的底部向上延伸以限制隔膜的偏转的突起(38)。
    • 44. 发明授权
    • Method and apparatus for forming hermetically sealed electrical
feedthrough conductors
    • 用于形成密封的电馈通导体的方法和装置
    • US4525766A
    • 1985-06-25
    • US573508
    • 1984-01-25
    • Kurt E. Petersen
    • Kurt E. Petersen
    • H01G7/00G01L9/00H01L23/31H01L23/485H01L29/84H04N9/09H05K5/02
    • G01L9/0073Y10T29/435
    • Hermetically sealed electrical feedthrough conductors are formed across the periphery or boundary between a hermetically sealed region on a semiconductor substrate and a second or external region thereof by first forming a planar insulative layer on the surface of the silicon substrate along the predetermined path of the feedthrough conductor across the periphery, said insulative layer having at least one planar projection on each side thereof extending out from the path and coming to a point, and then forming thereon a planar metal feedthrough conductor layer that substantially covers the insulative layer, including corresponding metal planar projections. An insulator element sized to encapsulate the region to be sealed is then mallory bonded to the periphery, including the feedthrough conductor, so as to form a hermetic seal along the entire periphery including in the region of said feedthrough conductor. The planar projections form a compression bond that eliminates any tenting region that would otherwise form beneath the insulator element at the edges of the feedthrough conductor and the underlying insulative layer.
    • 通过首先沿着馈通导体的预定路径在硅衬底的表面上形成平面绝缘层,在半导体衬底上的气密密封区域和第二或外部区域之间的周边或边界上形成密封电馈通导体 所述绝缘层在其每一边上至少有一个从该路径延伸出来的一个平面突起并且到达一个点,然后在其上形成基本上覆盖绝缘层的平面金属馈通导体层,包括相应的金属平面突起 。 尺寸为封装要密封的区域的绝缘体元件然后与包括馈通导体在内的周边连接,以便沿着包括所述馈通导体的区域中的整个周边形成气密密封。 平面突起形成压接,消除了在馈通导体和下面的绝缘层的边缘处不会在绝缘体元件下方形成的任何突起区域。
    • 49. 发明授权
    • Cooling system for VLSI circuit chips
    • VLSI电路芯片的冷却系统
    • US4561040A
    • 1985-12-24
    • US630031
    • 1984-07-12
    • Dean E. EastmanJerome M. EldridgeKurt E. PetersenGraham Olive
    • Dean E. EastmanJerome M. EldridgeKurt E. PetersenGraham Olive
    • F28F27/02H01L23/473H05K7/20
    • H01L23/4332F28F9/0278H01L23/473H01L2224/16H01L2924/3011
    • A system for cooling integrated circuit chips and particularly those involving very large scale integrated circuits; the system provides for closely associating the heat-sink or heat exchange element with the integrated circuit chip by having the heat-sink, in the form of a "cooling chip", in intimate contact with the back surface of an integrated circuit chip (in a "flip chip" configuration, the front, or circuit-implemented, surface, makes contact with a ceramic carrier or module); the cooling chip is provided with a plurality of spaced parallel grooves which extend along the one side or surface opposite the surface that is in bearing contact with the integrated circuit chip, whereby liquid coolant flows through the grooves so as to remove heat from the integrated circuit chip; further included in the system is a specially configured bellows for conducting the liquid coolant from a source to the heat-sink, and for removing the liquid coolant; a coolant distribution means, in the form of at least one glass plate or manifold, is provided with spaced passageways interconnecting the respective incoming and outgoing coolant flow paths of the bellows with the heat-sink.
    • 用于冷却集成电路芯片的系统,特别是涉及非常大规模集成电路的芯片; 该系统通过将散热器与“集成电路芯片”的后表面紧密接触,形成“冷却芯片”的形式,使散热器或热交换元件与集成电路芯片紧密相关 一个“倒装芯片”配置,前面或电路实现的表面与陶瓷载体或模块接触); 冷却芯片设置有多个间隔开的平行凹槽,其沿着与集成电路芯片轴承接触的表面相对的一侧或表面延伸,由此液体冷却剂流过凹槽,以便从集成电路移除热量 芯片; 进一步包括在系统中的是专门构造的波纹管,用于将液体冷却剂从源传导到散热器,并用于去除液体冷却剂; 形成至少一个玻璃板或歧管形式的冷却剂分配装置设置有将波纹管的相应进入和流出冷却剂流动路径与散热器互连的间隔通道。