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    • 43. 发明授权
    • Method of manufacturing thin film transistor substrate
    • 制造薄膜晶体管基板的方法
    • US07790532B2
    • 2010-09-07
    • US12324231
    • 2008-11-26
    • Jae-Hyuk ChangKyu-Young Kim
    • Jae-Hyuk ChangKyu-Young Kim
    • H01L21/84
    • H01L27/1288H01L27/1248
    • In a method of manufacturing a thin film transistor substrate, a gate line and a gate electrode are formed on a substrate. A gate insulating layer is formed to cover the gate line and the gate electrode. A semiconductor layer is formed on the gate insulating layer to overlap with the gate electrode. A data line, a source electrode, and a drain electrode are formed on the gate insulating layer and the semiconductor layer. A photoresist layer is formed on the data line, the source electrode, and the drain electrode. The photoresist layer is patterned, and an organic layer is formed on the substrate having the photoresist layer pattern. Then, the photoresist layer pattern is removed.
    • 在制造薄膜晶体管基板的方法中,在基板上形成栅极线和栅电极。 形成栅极绝缘层以覆盖栅极线和栅电极。 在栅绝缘层上形成半导体层以与栅电极重叠。 在栅极绝缘层和半导体层上形成数据线,源电极和漏电极。 在数据线,源电极和漏电极上形成光致抗蚀剂层。 对光致抗蚀剂层进行图案化,在具有光致抗蚀剂层图案的基板上形成有机层。 然后,去除光致抗蚀剂层图案。