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41. 发明申请

US20130022014A1 METHOD AND APPARATUS FOR DETERMINING SEARCH SPACES AND SEARCH POSITIONS IN A COMMUNICATION SYSTEM WHICH OPERATES A PLURALITY OF COMPONENT CARRIERS, AND METHOD AND APPARATUS FOR DECODING CONTROL INFORMATION USING SAME 审中-公开
标题翻译：用于确定操作多个组件运营商的通信系统中的搜索空间和搜索位置的方法和装置，以及用于使用相同方式解码控制信息的方法和装置
公开(公告)号：US20130022014A1
公开(公告)日：2013-01-24
申请号：US13638918
申请日：2011-03-31
申请人： Sungkwon Hong , Kibum Kwon , Jae Hyun Ahn
发明人： Sungkwon Hong , Kibum Kwon , Jae Hyun Ahn
IPC分类号： H04W72/04
CPC分类号： H04L1/0032 , H04L1/0027 , H04L1/0029 , H04L1/0038 , H04L1/0072 , H04L5/001
摘要： Aspects of the invention include a method and apparatus for allocating a control information resource in a wireless communication system, which operates a plurality of component carriers, and for decoding control information. Control information on the plurality of component carriers is realigned in accordance with the order of decoding and resources are allocated to reduce control information decoding complexity at the receiving end and to enable an estimation of amount of computation for decoding. A method for determining a search space, which is a set of physical downlink control channel (PDCCH) candidates to be monitored by a terminal in a communication system, involves determining, as the search space, an extended search candidate formed by the value obtained by multiplying the number of search candidates applied to a carrier component and carrier indication information on the component carriers of user equipment if the user equipment uses a plurality of component carriers.
摘要翻译：本发明的方面包括一种用于在无线通信系统中分配控制信息资源的方法和装置，该无线通信系统操作多个分量载波，并用于解码控制信息。根据解码的顺序对多个分量载波的控制信息重新排列，分配资源以减少接收端的控制信息解码复杂度，并且能够估计解码的计算量。一种用于确定搜索空间的方法，所述搜索空间是由通信系统中的终端监视的一组物理下行链路控制信道（PDCCH）候选，涉及确定由所述搜索空间形成的扩展搜索候选，所述扩展搜索候选由如果用户设备使用多个分量载波，则将应用于载波分量的搜索候选的数量和用户设备的分量载波上的载波指示信息相乘。

42. 发明申请

US20080011942A1 CMOS IMAGE SENSOR WITH PHOTO DIODE GATE 有权
标题翻译：具有光电二极管的CMOS图像传感器
公开(公告)号：US20080011942A1
公开(公告)日：2008-01-17
申请号：US11771255
申请日：2007-06-29
申请人： Sungkwon Hong , Jeff McKee
发明人： Sungkwon Hong , Jeff McKee
IPC分类号： H01L31/00
CPC分类号： H01L27/14689 , H01L27/14603 , H01L27/14609 , H01L27/1462
摘要： A photodiode has a photodiode gate structure on the surface of the substrate. The photodiode may be located in a pixel sensor cell comprising a substrate having a first surface level. The photodiode has a first doped region of a first conductivity type and a second doped region of a second conductivity type located beneath the first surface level of the substrate. A photodiode gate is formed of a first dielectric substance layer formed over the first surface of the substrate, thereby forming a second surface, and a second polysilicon layer formed over the second surface of the first layer. A transistor is located adjacent to the photodiode. The photodiode gate improves charge transfer from the photodiode to the transfer gate and floating diffusion region. The improved charge transfer minimizes image lag and leakage and reduces energy barriers.
摘要翻译：光电二极管在基板的表面上具有光电二极管栅极结构。光电二极管可以位于包括具有第一表面水平的衬底的像素传感器单元中。光电二极管具有位于衬底的第一表面水平下方的第一导电类型的第一掺杂区域和第二导电类型的第二掺杂区域。光电二极管栅极由在基板的第一表面上形成的第一电介质层形成，从而形成第二表面，以及形成在第一层的第二表面上的第二多晶硅层。晶体管位于光电二极管附近。光电二极管栅极改善了从光电二极管到传输门和浮动扩散区的电荷转移。改进的电荷传输使图像滞后和泄漏最小化，并减少能量屏障。

43. 发明申请

US20070065970A1 Method of fabricating a storage gate pixel design 有权
标题翻译：制造存储门像素设计的方法
公开(公告)号：US20070065970A1
公开(公告)日：2007-03-22
申请号：US11516731
申请日：2006-09-07
申请人： Inna Patrick , Sungkwon Hong
发明人： Inna Patrick , Sungkwon Hong
IPC分类号： H01L21/00
CPC分类号： H01L27/14609 , H01L27/14643 , H01L27/14689
摘要： A method of fabricating a pixel cell having a shutter gate structure. First and second charge barriers are respectively created between a photodiode and a first charge storage region and between the first storage region and a floating diffusion region. A global shutter gate is formed to control the charge barrier and transfer charges from the photodiode to the first charge storage region by effectively lowering the first charge barrier. A transfer transistor acts to transfer charges from the first storage region to the floating diffusion region by reducing the second charge barrier.
摘要翻译：一种制造具有快门门结构的像素单元的方法。分别在光电二极管和第一电荷存储区之间以及在第一存储区域和浮动扩散区域之间产生第一和第二电荷势垒。形成全局快门闸门，通过有效降低第一电荷势垒来控制电荷势垒，并将电荷从光电二极管转移到第一电荷存储区。转移晶体管用于通过减少第二电荷势垒将电荷从第一存储区转移到浮动扩散区。

44. 发明授权

US07075049B2 Dual conversion gain imagers 有权
标题翻译：双转换增益成像器
公开(公告)号：US07075049B2
公开(公告)日：2006-07-11
申请号：US10458262
申请日：2003-06-11
申请人： Howard E. Rhodes , Sungkwon Hong
发明人： Howard E. Rhodes , Sungkwon Hong
IPC分类号： H01L27/00 , H01L31/062
CPC分类号： H01L27/14603 , H04N5/35572 , H04N5/3559 , H04N5/37452
摘要： An imager with dual conversion gain floating diffusion regions. The dual conversion gain regions yield (1) high conversion gain and sensitivity to achieve excellent low light performance and (2) high full well capacity and conversion gain to achieve high dynamic range. A dual conversion gain element is coupled between each floating diffusion node and a respective capacitor. The dual conversion gain element switches in the capacitance of the capacitor to change the conversion gain of the floating diffusion node from a first conversion gain to a second conversion gain. The imager may be a CMOS or CCD type imager.
摘要翻译：具有双转换增益的成像器浮动扩散区域。双转换增益区产生（1）高转换增益和灵敏度，以实现优异的低光性能，（2）高全容量和转换增益实现高动态范围。双转换增益元件耦合在每个浮动扩散节点和相应的电容器之间。双转换增益元件切换电容器的电容，以将浮动扩散节点的转换增益从第一转换增益改变为第二转换增益。成像器可以是CMOS或CCD型成像器。

45. 发明授权

US07071020B2 Method of forming an elevated photodiode in an image sensor 有权
标题翻译：在图像传感器中形成升高的光电二极管的方法
公开(公告)号：US07071020B2
公开(公告)日：2006-07-04
申请号：US11126343
申请日：2005-05-11
申请人： Sungkwon Hong
发明人： Sungkwon Hong
IPC分类号： H01L21/00
CPC分类号： H01L27/1462 , H01L27/14609 , H01L27/14636 , H01L27/14689
摘要： The invention provides an elevated photodiode for image sensors and methods of formation of the photodiode. Elevated photodiodes permit a decrease in size requirements for pixel sensor cells while reducing leakage, image lag and barrier problems typically associated with conventional photodiodes.
摘要翻译：本发明提供了用于图像传感器的升高的光电二极管和形成光电二极管的方法。升高的光电二极管可以减小像素传感器单元的尺寸要求，同时减少通常与常规光电二极管相关的泄漏，图像滞后和屏障问题。

46. 发明申请

US20060131481A1 CMOS image sensor having pinned diode floating diffusion region 有权
公开(公告)号：US20060131481A1
公开(公告)日：2006-06-22
申请号：US11299665
申请日：2005-12-13
申请人： Sungkwon Hong
发明人： Sungkwon Hong
IPC分类号： H01L31/00
CPC分类号： H01L27/14609 , H01L27/1463 , H01L27/14643 , H01L27/14689 , H04N5/35527 , H04N5/3559
摘要： The present invention provides an image sensor having a pinned floating diffusion region in addition to a pinned photodiode. The pinned floating diffusion region increases the capacity of the sensor to store charge, increases the dynamic range of the sensor and widens intra-scene intensity variation.

47. 发明申请

US20060060904A1 Dual gate structure for imagers and method of formation 有权
公开(公告)号：US20060060904A1
公开(公告)日：2006-03-23
申请号：US11273391
申请日：2005-11-15
申请人： Sungkwon Hong
发明人： Sungkwon Hong
IPC分类号： H01L29/94
CPC分类号： H01L27/0623 , H01L21/28052 , H01L21/823842 , H01L27/10873 , H01L27/14643 , H01L27/14689 , H01L27/148 , H01L28/55
摘要： A device, as in an integrated circuit, includes diverse components such as transistors and capacitors. After conductive layers for all types of components are produced, a silicide layer is provided over conductive layers, reducing resistance. The device can be an imager in which pixels in an array includes a capacitor and readout circuitry with NMOS transistors. Periphery circuitry around the array can include PMOS transistors. Because the silicide layer is formed after the conductive layers, it is not exposed to high temperatures and, therefore, migration and cross-contamination of dopants is reduced.

48. 发明申请

US20050040395A1 Imaging with gate controlled charge storage 有权
公开(公告)号：US20050040395A1
公开(公告)日：2005-02-24
申请号：US10876514
申请日：2004-06-28
申请人： Sungkwon Hong
发明人： Sungkwon Hong
IPC分类号： H01L27/146 , H01L27/148 , H01L35/24
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14643 , H01L27/14689
摘要： A pixel cell comprises a photo-conversion device for generating charge and a gate controlled charge storage region for storing photo-generated charge under control of a control gate. The charge storage region can be a single CCD stage having a buried channel to obtain efficient charge transfer and low charge loss. The charge storage region is adjacent to a gate of a transistor. The transistor gate is adjacent to the photo-conversion device and, in conjunction with the control gate, transfers photo-generated charge from the photo-conversion device to the charge storage region.

49. 发明申请

US20140105151A1 METHOD FOR RESOURCE ALLOCATION AND TRANSMISSION IN WIRELESS COMMUNICATION SYSTEM, AND TRANSMITTING DEVICE THEREOF, RECEIVING DEVICE CORRESPONDING THERETO 审中-公开
标题翻译：无线通信系统中的资源分配和传输方法及其发送装置，接收与之相关的设备
公开(公告)号：US20140105151A1
公开(公告)日：2014-04-17
申请号：US14118220
申请日：2012-05-10
申请人： Sungkwon Hong
发明人： Sungkwon Hong
IPC分类号： H04W72/04
CPC分类号： H04W72/04 , H04B1/713 , H04L5/001 , H04L5/0012 , H04L5/0037 , H04L5/0044 , H04L5/0053
摘要： The present invention relates to a method for resource allocation in a wireless communication system, a device thereof, and a system thereof.
摘要翻译：本发明涉及无线通信系统中的资源分配方法及其装置及其系统。

50. 发明授权

US08637910B2 Image sensor 有权
标题翻译：图像传感器
公开(公告)号：US08637910B2
公开(公告)日：2014-01-28
申请号：US12940499
申请日：2010-11-05
申请人： Junemo Koo , Ihara Hisanori , Yoondong Park , HoonSang Oh , Sangjun Choi , HyungJin Bae , Tae Eung Yoon , Sungkwon Hong
发明人： Junemo Koo , Ihara Hisanori , Yoondong Park , HoonSang Oh , Sangjun Choi , HyungJin Bae , Tae Eung Yoon , Sungkwon Hong
IPC分类号： H01L31/113
CPC分类号： H01L27/14609 , H01L27/1463 , H01L27/14647
摘要： An image sensor includes an active region including a photoelectric conversion region and a floating diffusion region, which are separated from each other, defined by a device isolation region on a semiconductor substrate, and a transfer transistor including a first sub-gate provided on an upper surface of the semiconductor substrate and a second sub-gate extending within a recessed portion of the semiconductor substrate on the active region between the photoelectric conversion region and the floating diffusion region, wherein the photoelectric conversion region includes a plurality of photoelectric conversion elements, which vertically overlap each other within the semiconductor substrate and are spaced apart from the recessed portion.
摘要翻译：图像传感器包括由半导体衬底上的器件隔离区限定的彼此分离的光电转换区和浮动扩散区的有源区，以及包括设置在上部的第一子栅极的转移晶体管半导体衬底的表面和在所述光电转换区域和所述浮动扩散区域之间的有源区域上在所述半导体衬底的凹陷部分内延伸的第二子栅极，其中所述光电转换区域包括多个光电转换元件，在半导体衬底内彼此重叠并且与凹部间隔开。

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