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41. 发明授权

US07477475B2 Helical scan type magnetic tape reproduction apparatus and magnetic tape reproduction method 失效
标题翻译：螺旋扫描型磁带再现装置和磁带复制方法
公开(公告)号：US07477475B2
公开(公告)日：2009-01-13
申请号：US11747464
申请日：2007-05-11
申请人： Toshiyuki Hirose , Hideki Nonoyama , Osamu Nakamura , Akira Itou , Yoshinori Saito
发明人： Toshiyuki Hirose , Hideki Nonoyama , Osamu Nakamura , Akira Itou , Yoshinori Saito
IPC分类号： G11B5/584
CPC分类号： G11B5/534 , G11B5/588
摘要： Disclosed herein is a helical scan type magnetic tape reproduction apparatus, including: a helical scan type reproduction head capable of moving in the track widthwise direction by displacement of said actuator itself; target time decision means for measuring a period of time from a reference point of time with regard to each of a plurality of markers recorded in a dispersed relationship at predetermined positions on the tracks in advance to the marker by a predetermined number of times, averaging the measurement time periods of the markers and storing the average time periods; and tracking control means for measuring actual time periods from the reference time points with regard to the markers and performing updating control of a control voltage to be applied to said actuator for said reproduction head in accordance with time information of the differences between the target time periods and the actual time periods.
摘要翻译：这里公开了一种螺旋扫描型磁带再现装置，包括：能够通过所述致动器本身的位移沿轨道宽度方向移动的螺旋扫描型再现头; 目标时间决定装置，用于相对于在轨道上的预定位置以分散关系记录的多个标记中的每一个，从参考时间点预先指定预定次数来测量一段时间，标记的测量时间段并存储平均时间段; 以及跟踪控制装置，用于根据标记的参考时间点测量实际时间段，并根据目标时间段之间的差异的时间信息执行要施加到所述再现头的所述致动器的控制电压的更新控制和实际时间段。

42. 发明授权

US07465593B2 Electronics device, semiconductor device, and method for manufacturing the same 有权
标题翻译：电子器件，半导体器件及其制造方法
公开(公告)号：US07465593B2
公开(公告)日：2008-12-16
申请号：US12007293
申请日：2008-01-09
申请人： Shunpei Yamazaki , Masaharu Nagai , Osamu Nakamura
发明人： Shunpei Yamazaki , Masaharu Nagai , Osamu Nakamura
IPC分类号： H01L21/00
CPC分类号： H01L27/3244 , G02F1/13454 , G02F1/136227 , H01L27/12 , H01L27/1214 , H01L27/1248 , H01L27/3246 , H01L27/3258 , H01L51/5246 , H01L51/529 , H01L2251/5323
摘要： It is an object of the present invention to provide a high reliable EL display device and a manufacturing method thereof by shielding intruding moisture or oxygen which is a factor of deteriorating the property of an EL element without enlarging the EL display device.In the invention, application is used as a method for forming a high thermostability planarizing film 16, typically, an interlayer insulating film (a film which serves as a base film of a light emitting element later) of a TFT in which a skeletal structure is configured by the combination of silicon (Si) and oxygen (O). After the formation, an edge portion or an opening portion is formed to have a tapered shape. Afterwards, distortion is given by adding an inert element with a comparatively large atomic radius to modify or highly densify a surface (including a side surface) for preventing the intrusion of moisture or oxygen.
摘要翻译：本发明的目的是提供一种高可靠性的EL显示装置及其制造方法，该EL显示装置及其制造方法通过屏蔽侵入的水分或氧气，这是使EL元件的特性劣化而不扩大EL显示装置的因素。在本发明中，作为用于形成高热稳定性平坦化膜16的方法，通常使用其中骨架结构是TFT的TFT层的绝缘膜（用作发光元件的基膜的膜）由硅（Si）和氧（O）的组合构成。在形成之后，形成具有锥形形状的边缘部分或开口部分。然后，通过添加具有较大原子半径的惰性元素来改变或高度致密化表面（包括侧表面）以防止水分或氧气的侵入而给出变形。

43. 发明授权

US07401885B2 Droplet discharge apparatus 有权
标题翻译：滴液排放装置
公开(公告)号：US07401885B2
公开(公告)日：2008-07-22
申请号：US11197835
申请日：2005-08-05
申请人： Shunpei Yamazaki , Osamu Nakamura
发明人： Shunpei Yamazaki , Osamu Nakamura
IPC分类号： B41J2/015 , B41J2/14 , B41J2/175
CPC分类号： B41J2/165 , B41J2/14016 , B41J2/14201 , B41J2202/05
摘要： An object of the invention is to provide a droplet discharge apparatus which does not cause defective discharge due to drying, solidification, or the like of a composition in discharging the composition from a nozzle. One feature of the invention is to comprise a nozzle portion provided with a nozzle hole for discharging a composition, a piezo method for discharging the composition from the nozzle hole, a channel for supplying the composition to the bottom surface of the nozzle portion, wherein lyophilic treatment is performed on the bottom surface of the nozzle portion.
摘要翻译：本发明的目的是提供一种液滴喷射装置，其在从喷嘴排出组合物时不会由于组合物的干燥，固化等而引起不良的排出。本发明的一个特征是包括一个喷嘴部分，其具有用于排出组合物的喷嘴孔，用于从喷嘴孔排出组合物的压电方法，用于将组合物供给到喷嘴部分的底表面的通道，其中亲液在喷嘴部的底面上进行处理。

44. 发明授权

US07384860B2 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07384860B2
公开(公告)日：2008-06-10
申请号：US10941000
申请日：2004-09-15
申请人： Osamu Nakamura , Manabu Katsumura , Shunpei Yamazaki
发明人： Osamu Nakamura , Manabu Katsumura , Shunpei Yamazaki
IPC分类号： H01L21/36 , H01L21/20 , H01L21/84
CPC分类号： H01L21/02672 , H01L21/2022 , H01L21/3226 , H01L27/1277 , H01L29/4908 , H01L29/66757 , H01L29/78621 , H01L29/78627
摘要： The present invention relates to a method of manufacturing a semiconductor device having an excellent gettering effect. In this method, when phosphorus is added to a poly-Si film, which has been crystallized by the addition of a metal, to subject the resultant poly-Si film to the heat treatment to carry out gettering therefor, the device is performed for the shape of the island-like insulating film on the poly-Si film which is employed when implanting phosphorus. Thereby, the area of the boundary surface between the region to which phosphorus has been added and the region to which no phosphorus has been added is increased to enhance gettering efficiency.
摘要翻译：本发明涉及一种制造具有优异吸气效果的半导体器件的方法。在这种方法中，当通过添加金属将已经结晶的多晶硅膜加入磷中时，为了进行吸热而使得到的多晶硅膜进行热处理，对于在植入磷时使用的多晶硅膜上的岛状绝缘膜的形状。由此，增加了添加了磷的区域与没有添加磷的区域之间的边界面的面积，以提高吸气效率。

45. 发明授权

US07332432B2 Method for manufacturing wiring, thin film transistor, light emitting device and liquid crystal display device, and droplet discharge apparatus for forming the same 有权
标题翻译：制造布线，薄膜晶体管，发光装置和液晶显示装置的方法以及用于形成它的液滴喷射装置
公开(公告)号：US07332432B2
公开(公告)日：2008-02-19
申请号：US10946649
申请日：2004-09-22
申请人： Osamu Nakamura , Kiyofumi Ogino
发明人： Osamu Nakamura , Kiyofumi Ogino
IPC分类号： H01L21/44
CPC分类号： H01L51/0022 , G09G2300/0814 , H01L21/288 , H01L21/76838 , H01L27/3244 , H01L27/3276 , H01L51/56 , H01L2251/5315 , H01L2251/5323
摘要： As a semiconductor device, specifically, a pixel portion included in a semiconductor device is made to have higher precision and higher aperture ratio, it is required to form a smaller wiring in width. In the case of forming a wiring by using an ink-jet method, a dot spreads on a wiring formation surface, and it is difficult to narrow width of a wiring. In the present invention, a photocatalytic substance typified by TiO2 is formed on a wiring formation surface, and a wiring is formed by utilizing photocatalytic activity of the photocatalytic substance. According to the present invention, a narrower wiring, that is, a smaller wiring in width than a diameter of a dot formed by an ink-jet method can be formed.
摘要翻译：作为半导体装置，具体地说，将包括在半导体器件中的像素部分制成具有更高的精度和更高的开口率，需要在宽度上形成更小的布线。在通过喷墨法形成布线的情况下，点布线在布线形成面上，难以缩小布线的宽度。在本发明中，在布线形成面上形成以TiO 2为代表的光催化剂物质，利用光催化剂的光催化活性形成配线。根据本发明，可以形成较窄的布线，即宽度小于通过喷墨法形成的点的直径的布线。

46. 发明申请

US20080026490A1 Evaluation method using a TEG, a method of manufacturing a semiconductor device having the TEG, an element substrate and a panel having the TEG, a program for controlling dosage and a computer-readable recording medium recording the program 有权
标题翻译：使用TEG的评价方法，具有TEG的半导体装置的制造方法，具有TEG的元件基板和面板，用于控制剂量的程序以及记录程序的计算机可读记录介质
公开(公告)号：US20080026490A1
公开(公告)日：2008-01-31
申请号：US11826861
申请日：2007-07-19
申请人： Etsuko Asano , Osamu Nakamura , Masayuki Sakakura
发明人： Etsuko Asano , Osamu Nakamura , Masayuki Sakakura
IPC分类号： H01L21/66
CPC分类号： H01L29/78627 , H01L22/34
摘要： The reliability of a GOLD structure TFT depends on an impurity concentration in its gate-overlapped region. Thus, it is an object of the present invention to obtain a resistance distribution corresponding to a tapered shape of a gate electrode in a gate-overlapped region. According to the present invention, plural TEGs are manufactured as Lov resistance monitors in which mask alignment is misaligned with several μm interval to perform a resistance measurement on each of the TEGs. Consequently, a resistance distribution corresponding to a tapered shape can be obtained in a channel forming region, a gate-overlapped region and a source/drain region.
摘要翻译： GOLD结构TFT的可靠性取决于其栅极重叠区域中的杂质浓度。因此，本发明的目的是获得对应于栅极重叠区域中的栅电极的锥形形状的电阻分布。根据本发明，将多个TEG制造为Lov电阻监视器，其中掩模对准以几个间隔间隔对准，以对每个TEG执行电阻测量。因此，可以在沟道形成区域，栅极重叠区域和源极/漏极区域中获得对应于锥形形状的电阻分布。

47. 发明授权

US07314785B2 Display device and manufacturing method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US07314785B2
公开(公告)日：2008-01-01
申请号：US10968240
申请日：2004-10-20
申请人： Shunpei Yamazaki , Osamu Nakamura , Aki Yamamiti , Naoto Yamade
发明人： Shunpei Yamazaki , Osamu Nakamura , Aki Yamamiti , Naoto Yamade
IPC分类号： H01L21/336 , H01L21/00 , H01L21/84
CPC分类号： H01L27/1259 , H01L27/1214 , H01L27/3244 , H01L27/3246 , H01L27/3258 , H01L27/3272 , H01L51/5206 , H01L51/524 , H01L51/5253 , H01L51/5284 , H01L2251/5323 , H01L2251/552
摘要： A display device with improved reliability and a manufacturing method of the same with improved yield. A display device according to the invention comprises a display area including a first electrode, an insulating layer covering an edge of the first electrode, a layer containing an organic compound, which is formed on the first electrode, and a second electrode. The first electrode and the insulating layer are doped with an impurity element of one conductivity.
摘要翻译：一种可靠性提高的显示装置及其制造方法，其产率提高。根据本发明的显示装置包括显示区域，包括第一电极，覆盖第一电极的边缘的绝缘层，形成在第一电极上的含有机化合物的层和第二电极。第一电极和绝缘层掺杂有一种导电性的杂质元素。

48. 发明申请

US20070099440A1 Method for manufacturing semiconductor device, semiconductor device, and laser irradiation apparatus 有权
标题翻译：半导体器件，半导体器件和激光照射设备的制造方法
公开(公告)号：US20070099440A1
公开(公告)日：2007-05-03
申请号：US11637914
申请日：2006-12-13
申请人： Shunpei Yamazaki , Osamu Nakamura , Hironobu Shoji
发明人： Shunpei Yamazaki , Osamu Nakamura , Hironobu Shoji
IPC分类号： H01L21/00
CPC分类号： H01L21/02686 , C30B1/023 , C30B1/08 , C30B29/06 , H01L21/02683 , H01L21/2026
摘要： [Object]It is an object of the present invention to provide a laser irradiation apparatus being able to crystallize the semiconductor film homogeneously while suppressing the variation of the crystallinity in the semiconductor film and the unevenness of the state of the surface thereof. It is another object of the present invention to provide a method for manufacturing a semiconductor device using the laser irradiation apparatus which can suppress the variation of on-current, mobility, and threshold of TFT, and to further provide a semiconductor device manufactured with the manufacturing method. [Solution]A method for manufacturing a semiconductor device comprising the steps of adding the first noble gas to the semiconductor film formed over the insulating surface with the ion doping method and irradiating the semiconductor film with the first noble gas added therein with the laser light in an atmosphere of second noble gas, wherein the magnetic field is applied to the semiconductor film with the first noble gas added when the laser light is irradiated.
摘要翻译：本发明的目的是提供一种激光照射装置，其能够在抑制半导体膜中的结晶性的变化和其表面状态的不均匀的同时，均匀地结晶半导体膜。本发明的另一个目的是提供一种使用能够抑制TFT的导通电流，迁移率和阈值的变化的激光照射装置的半导体器件的制造方法，并且进一步提供利用制造制造的半导体器件方法。 [解决方案]一种半导体器件的制造方法，其特征在于，包括以下步骤：通过离子掺杂法将形成在绝缘表面上的半导体膜添加第一稀有气体，并将其中添加有激光的第一稀土气体照射到半导体膜第二惰性气体的气氛，其中当照射激光时，将第一稀有气体施加到半导体膜上。

49. 发明授权

US07209306B2 Recording medium, recording method, and recording/reproducing device 有权
标题翻译：记录介质，记录方法和记录/再现装置
公开(公告)号：US07209306B2
公开(公告)日：2007-04-24
申请号：US10477916
申请日：2003-03-12
申请人： Osamu Nakamura
发明人： Osamu Nakamura
IPC分类号： G11B5/09
CPC分类号： G11B20/1883 , G11B5/00813 , G11B5/0086 , G11B15/087 , G11B20/10 , G11B20/1208 , G11B27/107 , G11B27/11 , G11B27/3027 , G11B27/3063 , G11B2220/655 , G11B2220/90
摘要： As a tape recording format, tracks are formed by a succession of block units, and a data unit called a group is formed by data of size equivalent to a predetermined plurality of tracks. Using this format, a base group number indicating the group to which the current track physically belongs is recorded in the ID information for a track, and the lower four bits or similar of a group number indicating the group to which the current block logically belongs is recorded within a block. By this means, even if rewriting is performed in block units and a recorded state results in which the blocks of a plurality of groups are intermixed within a track, the group to which each block belongs can be correctly identified during reproduction.
摘要翻译：作为磁带记录格式，通过一系列块单元形成轨迹，并且称为组的数据单元由等同于预定多个磁道的大小的数据形成。使用该格式，表示当前轨道物理上属于的组的基组号被记录在轨道的ID信息中，并且指示当前块逻辑上属于的组的组号的低四位或类似值是记录在一个块内。通过这种方式，即使以块为单位执行重写，并且记录状态导致多个组中的块被混合在轨道内，则可以在再现期间正确地识别每个块所属的组。

50. 发明申请

US20060237397A1 Method for manufacturing semiconductor device and laser irradiation apparatus 有权
标题翻译：半导体装置及激光照射装置的制造方法
公开(公告)号：US20060237397A1
公开(公告)日：2006-10-26
申请号：US11471494
申请日：2006-06-21
申请人： Shunpei Yamazaki , Osamu Nakamura , Hironobu Shoji , Koichiro Tanaka
发明人： Shunpei Yamazaki , Osamu Nakamura , Hironobu Shoji , Koichiro Tanaka
IPC分类号： H01L21/36 , B23K26/00
CPC分类号： H01L21/02683 , B23K26/0604 , B23K26/0608 , B23K26/064 , B23K26/0643 , B23K26/0648 , B23K26/0665 , B23K26/12 , B23K26/123 , B23K26/127 , H01L21/2026 , H01L21/268 , H01L29/66757
摘要： According to the present invention, oxygen and nitrogen are effectively prevented from mixing into the semiconductor film by doping Ar or the like in the semiconductor film in advance, and by irradiating the laser light in the atmosphere of Ar or the like. Therefore, the variation of the impurity concentration due to the fluctuation of the energy density can be suppressed and the variation of the mobility of the semiconductor film can be also suppressed. Moreover, in TFT formed with the semiconductor film, the variation of the on-current in addition to the mobility can be also suppressed. Furthermore, in the present invention, the first laser light converted into the harmonic easily absorbed in the semiconductor film is irradiated to melt the semiconductor film and to increase the absorption coefficient of the fundamental wave.
摘要翻译：根据本发明，通过预先在半导体膜中掺杂Ar等，并且通过在Ar等的气氛中照射激光来有效地防止氧和氮混入半导体膜。因此，可以抑制由于能量密度的波动引起的杂质浓度的变化，并且还可以抑制半导体膜的迁移率的变化。此外，在由半导体膜形成的TFT中，还可以抑制导通电流的变化，同时也抑制迁移率。此外，在本发明中，照射转换为在半导体膜中容易吸收的谐波的第一激光以熔化半导体膜并增加基波的吸收系数。

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