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41. 发明授权

US06240782B1 Semiconductor physical quantity sensor and production method thereof 有权
标题翻译：半导体物理量传感器及其制造方法
公开(公告)号：US06240782B1
公开(公告)日：2001-06-05
申请号：US09247865
申请日：1999-02-11
申请人： Nobuyuki Kato , Toshimasa Yamamoto , Tsuyoshi Fukada , Minekazu Sakai
发明人： Nobuyuki Kato , Toshimasa Yamamoto , Tsuyoshi Fukada , Minekazu Sakai
IPC分类号： G01P15125
CPC分类号： G01P15/125 , G01P15/0802 , G01P2015/0814
摘要： A semiconductor physical quantity sensor includes a substrate, a beam-structure movable portion and a fixed portion. The beam-structure movable portion is suspended by four anchors formed of polycrystalline films. A rectangular mass is suspended between beams. Movable electrodes project from both sides of the mass. First fixed electrodes and second fixed electrodes are fixedly provided on the surface of the substrate. The substrate has a laminated structure, wherein an oxide film, attaching film, insulating films, conductive film and insulating film are laminated on the substrate. An anchor formed from the conductive film is electrically connected to the attaching film. An electrode pad made of an aluminum film is provided the above the anchor. Because this structure enables the potential of the attaching film to be fixed, parasitic capacitance can be decreased.
摘要翻译：半导体物理量传感器包括基板，梁结构可动部和固定部。梁结构可移动部分由由多晶膜形成的四个锚固件悬挂。梁之间悬挂有矩形质量块。活动电极从质量两侧投射。第一固定电极和第二固定电极固定地设置在基板的表面上。基板具有叠层结构，其中在基板上层压氧化膜，附着膜，绝缘膜，导电膜和绝缘膜。由导电膜形成的锚固件与连接膜电连接。在锚上方设置由铝膜制成的电极垫。由于该结构能够使固定膜的电位固定，所以可以降低寄生电容。

42. 发明授权

US5932921A Sensor chip having a diode portions and a thin-wall portion 失效
标题翻译：传感器芯片具有二极管部分和薄壁部分
公开(公告)号：US5932921A
公开(公告)日：1999-08-03
申请号：US958319
申请日：1997-10-27
申请人： Minekazu Sakai , Inao Toyoda , Nobukazu Oba
发明人： Minekazu Sakai , Inao Toyoda , Nobukazu Oba
IPC分类号： G01L9/00 , H01L21/3063 , H01L29/84 , H01L29/82
CPC分类号： G01L9/0042 , H01L29/84
摘要： When a diaphragm portion of the pressure sensor or the like is fabricated, anisotropic etching is needed. This etching is carried out by electrochemically stopped etching. During this process, a voltage is applied to the diaphragm portion. A diode is connected between said diaphragm portion and an integrated circuit to prevent the voltage from being applied to the integrated circuit connected with the diaphragm portion. The diode is obtained by shorting the base and collector of a lateral p-n-p transistor to each other. A collector region is formed offset from immediately under a conductor pattern to prevent a parasitic MOS effect from producing a channel serving as a leakage current path. Further, a heavily doped n-type diffused region acting as a channel stopper is formed along the outer periphery of the collector region.
摘要翻译：当制造压力传感器等的隔膜部分时，需要进行各向异性蚀刻。该蚀刻通过电化学停止蚀刻进行。在该过程中，向隔膜部分施加电压。二极管连接在所述隔膜部分和集成电路之间，以防止电压施加到与隔膜部分连接的集成电路。二极管通过将侧面p-n-p晶体管的基极和集电极彼此短接而获得。集电极区域形成为从导体图案的正下方偏移，以防止寄生MOS效应产生用作漏电流路径的通道。此外，沿集电区域的外周形成充当通道阻挡件的重掺杂n型扩散区域。

43. 发明授权

US5654244A Process for producing semiconductor strain-sensitive sensor 失效
标题翻译：生产半导体应变敏感传感器的工艺
公开(公告)号：US5654244A
公开(公告)日：1997-08-05
申请号：US427960
申请日：1995-04-26
申请人： Minekazu Sakai , Tsuyoshi Fukada , Hiroshige Sugito
发明人： Minekazu Sakai , Tsuyoshi Fukada , Hiroshige Sugito
IPC分类号： G01L1/22 , G01L9/00 , H01L29/84 , H01L21/46
CPC分类号： G01L9/0042
摘要： In the present invention, a first protective layer formed over a diaphragm is prevented from being etched unnecessarily at the time of etching a second protective layer, and the detection accuracy of the diaphragm is improved.In a process for producing a semiconductor pressure sensor, a first protective layer 4, a metal layer 8 and a second protective layer 6 are successively formed by deposition over a diaphragm 1a, and the second protective layer 6 is removed by etching so that the second protective layer 6 is left on a predetermined portion of an electrode 5. Since the metal layer 8 acts as an etching stopper layer at the time of removing the second protective layer 6 by etching, the first protective layer 4 over the diaphragm 1a is prevented from being etched. The metal layer 8 is removed by etching thereafter so that only the first protective layer 4 is formed over the diaphragm 1a.
摘要翻译：在本发明中，在蚀刻第二保护层时防止在隔膜上形成的第一保护层不必要地被蚀刻，并且提高了隔膜的检测精度。在制造半导体压力传感器的工艺中，通过在隔膜1a上沉积来连续地形成第一保护层4，金属层8和第二保护层6，并且通过蚀刻去除第二保护层6，使得第二保护层6 保护层6留在电极5的预定部分上。由于金属层8在通过蚀刻去除第二保护层6时用作蚀刻停止层，所以防止隔膜1a上的第一保护层4 被蚀刻之后通过蚀刻除去金属层8，使得在隔膜1a上仅形成第一保护层4。

44. 发明申请

US20140077824A1 HUMIDITY SENSOR AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：湿度传感器及其制造方法
公开(公告)号：US20140077824A1
公开(公告)日：2014-03-20
申请号：US14115901
申请日：2012-05-30
申请人： Naohisa Niimi , Minekazu Sakai
发明人： Naohisa Niimi , Minekazu Sakai
IPC分类号： G01N27/22
CPC分类号： G01N27/223 , G01N27/121
摘要： A humidity sensor includes a humidity detention section, a pad section, and a dam section. The humidity detention section includes a pair of detection electrodes facing each other on a predetermined surface of a substrate and a humidity-sensitive film covering the detection electrodes. The pad section is spaced from the humidity detection section on the surface and covered with a protection gel section. The dam section is located between the humidity detection section and the pad section on the surface. The dam section includes a dam wire that is made from the same material as the detection electrodes and a dam humidity-sensitive film that is made from the same material as the humidity-sensitive film and covers at least part of the dam wire.
摘要翻译：湿度传感器包括湿度滞留部分，垫部分和坝部分。湿度滞留部分包括在基板的预定表面上彼此面对的一对检测电极和覆盖检测电极的湿敏膜。垫部分与表面上的湿度检测部分间隔开并用保护凝胶部分覆盖。水坝段位于湿度检测部分和表面上的垫部分之间。坝段包括由与检测电极相同的材料制成的坝线，以及由与湿敏膜相同的材料制成并覆盖至少一部分坝线的水坝湿度敏感膜。

45. 发明授权

US08604565B2 Physical quantity detection device and method for manufacturing the same 失效
标题翻译：物理量检测装置及其制造方法
公开(公告)号：US08604565B2
公开(公告)日：2013-12-10
申请号：US13083732
申请日：2011-04-11
申请人： Tetsuo Fujii , Minekazu Sakai , Takumi Shibata
发明人： Tetsuo Fujii , Minekazu Sakai , Takumi Shibata
IPC分类号： H01L29/82
CPC分类号： G01L9/0005
摘要： A physical quantity detection device includes: an insulating layer; a semiconductor layer on the insulating layer; and first and second electrodes in the semiconductor layer. Each electrode has a wall part, one of which includes two diaphragms and a cover part. The diaphragms facing each other provide a hollow cylinder having an opening covered by the cover part. One diaphragm faces the other wall part or one diaphragm in the other wall part. A distance between the one diaphragm and the other wall part or the one diaphragm in the other wall part is changed with pressure difference between reference pressure in the hollow cylinder and pressure of an outside when a physical quantity is applied to the diaphragms. The physical quantity is detected by a capacitance between the first and second electrodes.
摘要翻译：物理量检测装置包括：绝缘层; 绝缘层上的半导体层; 以及半导体层中的第一和第二电极。每个电极具有壁部分，其中一个包括两个隔膜和盖部分。彼此相对的隔膜提供具有由盖部分覆盖的开口的中空圆柱体。一个隔膜面对另一个壁部分或另一个壁部分的一个隔膜。当物理量施加到隔膜时，一个隔膜和另一个壁部分中的另一个壁部分或一个隔膜之间的距离随空心圆柱体中的参考压力和外部压力之间的压力差而改变。物理量由第一和第二电极之间的电容检测。

46. 发明授权

US07622781B2 Semiconductor dynamic quantity sensor 有权
标题翻译：半导体动量传感器
公开(公告)号：US07622781B2
公开(公告)日：2009-11-24
申请号：US11137435
申请日：2005-05-26
申请人： Minekazu Sakai
发明人： Minekazu Sakai
IPC分类号： H01L29/82
CPC分类号： G01P15/125
摘要： When movable electrodes of beam arrangement structures are displaced in a direction perpendicular to the surface of a support substrate in first and second capacitance constituent portions by action of an acceleration while carrier voltages are applied, the difference between a first capacitance and second capacitance is output from the support substrate through a third capacitance constituent portion. Under self-diagnosis, the voltage applying counter electrode portion of the self-diagnosis fixed capacitance constituent portion is set to a first potential, and a signal output counter electrode portion of the third capacitance constituent portion is set to a second potential different from the first potential, whereby the potential of the support substrate corresponding to the fixed electrode in the first and second capacitance constituent portions is forcedly changed.
摘要翻译：当施加载波电压时，通过加速度的作用，在布置结构的可移动电极在第一和第二电容构成部分的垂直于支撑基板的表面的方向上位移时，第一电容和第二电容之间的差从支撑基板通过第三电容构成部分。在自诊断下，将自诊断固定电容构成部分的电压施加对电极部分设定为第一电位，将第三电容构成部分的信号输出对置电极部分设定为与第一电位不同的第二电位电位，由此强制地改变与第一和第二电容构成部分中的固定电极相对应的支撑衬底的电位。

47. 发明申请

US20070289384A1 Semiconductor device for providing capacitive semiconductor sensor and method for manufacturing capacitive semiconductor sensor 有权
标题翻译：用于提供电容半导体传感器的半导体器件和用于制造电容半导体传感器的方法
公开(公告)号：US20070289384A1
公开(公告)日：2007-12-20
申请号：US11723428
申请日：2007-03-20
申请人： Minekazu Sakai , Tameharu Oota
发明人： Minekazu Sakai , Tameharu Oota
IPC分类号： G01P15/125
CPC分类号： G01P15/125 , B81C1/00238 , B81C99/004 , G01P15/0802 , H01L2224/94
摘要： A method for manufacturing a capacitive semiconductor sensor includes: forming a plurality of circuit chips in a wafer, wherein each circuit chip includes a pad for testing a sensor chip; bonding the sensor chip on each circuit chip with a bump so that the sensor chip is electrically coupled with the circuit chip, wherein each sensor chip is made of semiconductor and has a capacitance changing portion, which is disposed on one side of the sensor chip and has a variable capacitance, wherein the circuit chip detects a capacitance change of the sensor chip, and wherein the one side of the sensor chip faces the circuit chip; testing each sensor chip through the pad; and cutting the wafer into individual circuit chips so that the circuit chip and the sensor chip provide the capacitive semiconductor sensor.
摘要翻译：制造电容式半导体传感器的方法包括：在晶片中形成多个电路芯片，其中每个电路芯片包括用于测试传感器芯片的焊盘; 将每个电路芯片上的传感器芯片与凸块接合，使得传感器芯片与电路芯片电耦合，其中每个传感器芯片由半导体制成，并具有电容改变部分，其设置在传感器芯片的一侧，具有可变电容，其中电路芯片检测传感器芯片的电容变化，并且其中传感器芯片的一侧面向电路芯片; 通过垫片测试每个传感器芯片; 并将晶片切割成单独的电路芯片，使得电路芯片和传感器芯片提供电容半导体传感器。

48. 发明授权

US07243545B2 Physical quantity sensor having spring 有权
标题翻译：物理量传感器有弹簧
公开(公告)号：US07243545B2
公开(公告)日：2007-07-17
申请号：US10795322
申请日：2004-03-09
申请人： Minekazu Sakai , Tameharu Ohta
发明人： Minekazu Sakai , Tameharu Ohta
IPC分类号： G01P15/125
CPC分类号： G01P15/125 , G01P2015/0814
摘要： A physical quantity sensor detects physical quantity. The sensor includes a plurality of springs, which have different spring constants, respectively. The sensor has a wide detection range of the physical quantity without assembling multiple sensors. Therefore, the sensor can be minimized. Further, since the sensor has an excellent linearity of the output characteristics, the sensor has a wide dynamic range and a high sensitivity.
摘要翻译：物理量传感器检测物理量。传感器包括分别具有不同弹簧常数的多个弹簧。传感器具有较宽的物理量检测范围，无需组装多个传感器。因此，传感器可以最小化。此外，由于传感器具有良好的输出特性的线性度，所以传感器具有宽动态范围和高灵敏度。

49. 发明授权

US06984541B2 Method of manufacturing capacitive type dynamic quantity sensor 有权
标题翻译：制造电容式动态量传感器的方法
公开(公告)号：US06984541B2
公开(公告)日：2006-01-10
申请号：US10994283
申请日：2004-11-23
申请人： Minekazu Sakai
发明人： Minekazu Sakai
IPC分类号： G01P15/125 , H01L21/02
CPC分类号： G01P15/125 , G01P2015/0814
摘要： In a capacitive type dynamic quantity sensor, a width of a beam in a beam portion extending in a direction that is perpendicular to a predetermined deformation direction and a gap disposed between a movable electrode and the fixed electrode in the predetermined deformation direction are approximately identical. Accordingly, manufacturing error is prevented from affecting the sensitivity of the capacitive type dynamic quantity sensor. For example, a manufacturing tolerance error of ±2.5% is allowed as a result of designing the width of the beam and the gap to be identical in length.
摘要翻译：在电容型动态量传感器中，沿着与预定变形方向垂直的方向延伸的梁部分中的梁的宽度和在预定变形方向上设置在可动电极和固定电极之间的间隙的宽度大致相同。因此，防止制造误差影响电容式动态量传感器的灵敏度。例如，通过设计光束的宽度和长度上相同的间隙，允许±2.5％的制造公差误差。

50. 发明授权

US06973844B2 Semiconductor mechanical quantity sensor 失效
标题翻译：半导体机械量传感器
公开(公告)号：US06973844B2
公开(公告)日：2005-12-13
申请号：US10791893
申请日：2004-03-04
申请人： Minekazu Sakai
发明人： Minekazu Sakai
IPC分类号： B81B7/04 , G01P15/125 , H01L29/84 , G01D7/00
CPC分类号： G01P15/125 , B81B7/04 , G01P2015/0814
摘要： A semiconductor mechanical quantity sensor includes two sensor chips (100a, 100b) having the same structure and the same characteristics formed on semiconductor substrates (10a, 10b), arranged on a circuit chip (6) in the same direction. There may be used a sensor chip having two sensors of the same structure formed in one semiconductor substrate in the same direction. The number of the sensors may be three or more. A plurality of sensors may be stacked on the semiconductor substrate or on the circuit chip, or may be arranged on both surfaces of the semiconductor substrate (10a, 10b) or the circuit chip (6).
摘要翻译：半导体机械量传感器包括在相同方向上布置在电路芯片（6）上的具有形成在半导体衬底（10a，10b）上的具有相同结构和相同特性的两个传感器芯片（100a，100b）。可以使用具有相同结构的两个传感器的传感器芯片，其在相同方向上形成在一个半导体衬底中。传感器的数量可以是三个以上。多个传感器可以堆叠在半导体衬底或电路芯片上，或者可以布置在半导体衬底（10a，10b）或电路芯片（6）的两个表面上。

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