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41. 发明授权

US08476683B2 On-chip radiation dosimeter 有权
标题翻译：片上辐射剂量计
公开(公告)号：US08476683B2
公开(公告)日：2013-07-02
申请号：US13569745
申请日：2012-08-08
申请人： Michael S. Gordon , Kenneth P. Rodbell , Jeng-Bang Yau
发明人： Michael S. Gordon , Kenneth P. Rodbell , Jeng-Bang Yau
IPC分类号： H01L27/14 , G01T1/02 , G01T1/24
CPC分类号： H01L21/26533 , H01L21/3115 , H01L21/76243 , H01L21/84 , H01L27/1203 , H01L31/119 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a first field effect transistor (FET) located on a substrate; and a second FET located on the substrate, the second FET comprising a first buried oxide (BOX) region located underneath a channel region of the second FET, wherein the first BOX region of the second FET is configured to cause the second FET to have a higher radiation sensitivity that the first FET.
摘要翻译：半导体器件包括位于衬底上的第一场效应晶体管（FET）; 以及位于所述衬底上的第二FET，所述第二FET包括位于所述第二FET的沟道区下方的第一掩埋氧化物（BOX）区域，其中所述第二FET的所述第一BOX区域被配置为使所述第二FET具有第一FET的辐射灵敏度更高。

42. 发明申请

US20130049130A1 ON-CHIP RADIATION DOSIMETER 有权
标题翻译：片上辐射剂量计
公开(公告)号：US20130049130A1
公开(公告)日：2013-02-28
申请号：US13569745
申请日：2012-08-08
申请人： Michael S. Gordon , Kenneth P. Rodbell , Jeng-Bang Yau
发明人： Michael S. Gordon , Kenneth P. Rodbell , Jeng-Bang Yau
IPC分类号： H01L27/092
CPC分类号： H01L21/26533 , H01L21/3115 , H01L21/76243 , H01L21/84 , H01L27/1203 , H01L31/119 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a first field effect transistor (FET) located on a substrate; and a second FET located on the substrate, the second FET comprising a first buried oxide (BOX) region located underneath a channel region of the second FET, wherein the first BOX region of the second FET is configured to cause the second FET to have a higher radiation sensitivity that the first FET.
摘要翻译：半导体器件包括位于衬底上的第一场效应晶体管（FET）; 以及位于所述衬底上的第二FET，所述第二FET包括位于所述第二FET的沟道区下方的第一掩埋氧化物（BOX）区域，其中所述第二FET的所述第一BOX区域被配置为使所述第二FET具有第一FET的辐射灵敏度更高。

43. 发明申请

US20130026544A1 FULLY DEPLETED SILICON ON INSULATOR NEUTRON DETECTOR 有权
标题翻译：绝缘子中性探测器上的全部绝缘硅
公开(公告)号：US20130026544A1
公开(公告)日：2013-01-31
申请号：US13189848
申请日：2011-07-25
申请人： Michael S. Gordon , Kenneth P. Rodbell , Jeng-Bang Yau
发明人： Michael S. Gordon , Kenneth P. Rodbell , Jeng-Bang Yau
IPC分类号： H01L31/119 , H01L31/18
CPC分类号： H01L31/119
摘要： A method for forming a neutron detector comprises thinning a backside silicon substrate of a radiation detector; and forming a neutron converter layer on the thinned backside silicon substrate of the radiation detector to form the neutron detector. The neutron converter layer comprises one of boron-10 (10B), lithium-6 (6Li), helium-3 (3He), and gadolinium-157 (157Gd).
摘要翻译：一种形成中子检测器的方法，包括使辐射检测器的背面硅衬底变薄; 并在辐射检测器的薄化的背面硅衬底上形成中子转换层以形成中子检测器。中子转换层包括硼-10（10B），锂-6（6Li），氦-3（3He）和钆-157（157Gd）中的一种。

44. 发明申请

US20090108212A1 RADIATION DETECTION SCHEMES, APPARATUS AND METHODS OF TRANSMITTING RADIATION DETECTION INFORMATION TO A NETWORK 审中-公开
标题翻译：辐射检测方案，向网络发射辐射检测信息的装置和方法
公开(公告)号：US20090108212A1
公开(公告)日：2009-04-30
申请号：US12326198
申请日：2008-12-02
申请人： Michael S. Gordon , Kenneth P. Rodbell , Robert L. Wisnieff
发明人： Michael S. Gordon , Kenneth P. Rodbell , Robert L. Wisnieff
IPC分类号： G01T1/00
CPC分类号： G01T1/04
摘要： Personal radiation detection devices, methods of obtaining radiation exposure data, and networks of personal radiation devices. The detection devices may include passive devices and active devices. The passive detection devices may have the same form factor as credit cards or be included in common types of credit card form factor sized cards.
摘要翻译：个人辐射检测装置，获得辐射照射数据的方法和个人辐射装置的网络。检测设备可以包括无源设备和有源设备。被动检测设备可以具有与信用卡相同的形式，或者被包括在常规类型的信用卡形状因子大小的卡中。

45. 发明授权

US07491948B2 Method of detecting and transmitting radiation detection information to a network 失效
标题翻译：检测和发射辐射检测信息到网络的方法
公开(公告)号：US07491948B2
公开(公告)日：2009-02-17
申请号：US11342429
申请日：2006-01-30
申请人： Michael S. Gordon , Kenneth P. Rodbell , Robert L. Wisnieff
发明人： Michael S. Gordon , Kenneth P. Rodbell , Robert L. Wisnieff
IPC分类号： G01T3/00
CPC分类号： G01T1/04
摘要： A method of detecting and transmitting radiation detection information to a network. The method including: communicating with one or more personal radiation detection devices, each device including, a host memory, an event memory, a microprocessor, a global positioning unit and a transceiver or a transmitter; a radiation shield around the host memory and the event memory; a radiation detection memory, the radiation detection memory, responsive to alpha radiation and including two or more SRAM arrays including cross-coupled invertors coupled to wordlines through different value capacitors; a conversion device including a material able to convert neutron and/or gamma radiation into alpha radiation; and an event detection circuit configured to detect and to store data relative to detection of the alpha radiation events by the radiation detection memory; storing the data in the event memory; and retrieving, in a reading device of the network, the data stored in the event memory.
摘要翻译：一种检测和发射辐射检测信息到网络的方法。该方法包括：与一个或多个个人辐射检测设备通信，每个设备包括主机存储器，事件存储器，微处理器，全球定位单元和收发器或发射器; 围绕主机存储器和事件存储器的辐射屏蔽; 辐射检测存储器，所述辐射检测存储器响应于α辐射并且包括两个或更多个SRAM阵列，包括通过不同值电容器耦合到字线的交叉耦合的反相器; 转换装置，其包括能够将中子和/或γ辐射转换为α辐射的材料; 以及事件检测电路，被配置为检测并存储相对于所述辐射检测存储器对所述α辐射事件的检测的数据; 将数据存储在事件存储器中; 以及在所述网络的读取设备中检索存储在所述事件存储器中的数据。

46. 发明授权

US07491643B2 Method and structure for reducing contact resistance between silicide contact and overlying metallization 有权
标题翻译：用于降低硅化物接触和上覆金属化之间的接触电阻的方法和结构
公开(公告)号：US07491643B2
公开(公告)日：2009-02-17
申请号：US11440202
申请日：2006-05-24
申请人： Christian Lavoie , Conal E. Murray , Kenneth P. Rodbell
发明人： Christian Lavoie , Conal E. Murray , Kenneth P. Rodbell
IPC分类号： H01L21/4763
CPC分类号： H01L23/485 , H01L21/28518 , H01L21/76877 , H01L21/76883 , H01L23/53209 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： A semiconductor structure in which the contact resistance in the contact opening is reduced as well as a method of forming the same are provided. This is achieved in the present invention by replacing conventional contact metallurgy, such as tungsten, or a metal silicide, such as Ni silicide or Cu silicide, with a metal germanide-containing contact material. The term “metal germanide-containing” is used in the present application to denote a pure metal germanide (i.e., MGe alloy) or a metal germanide that includes Si (i.e., MSiGe alloy).
摘要翻译：提供了其中接触开口中的接触电阻降低的半导体结构及其形成方法。这在本发明中通过用含金属锗化物的接触材料代替常规的接触冶金例如钨或金属硅化物，例如硅化镍或硅化铜，来实现。在本申请中使用的术语“含金属锗”表示纯金属锗（即MGe合金）或包含Si（即，MSiGe合金）的金属锗化物。

47. 发明申请

US20090039515A1 IONIZING RADIATION BLOCKING IN IC CHIP TO REDUCE SOFT ERRORS 有权
标题翻译： IC芯片中的放射线阻塞减少软错误
公开(公告)号：US20090039515A1
公开(公告)日：2009-02-12
申请号：US11836819
申请日：2007-08-10
申请人： Mukta G. Farooq , Ian D. Melville , Kevin S. Petrarca , Kenneth P. Rodbell
发明人： Mukta G. Farooq , Ian D. Melville , Kevin S. Petrarca , Kenneth P. Rodbell
IPC分类号： H01L21/44 , H01L23/48
CPC分类号： H01L23/5329 , H01L23/556 , H01L2924/0002 , Y10S438/958 , Y10S438/967 , H01L2924/00
摘要： Methods of blocking ionizing radiation to reduce soft errors and resulting IC chips are disclosed. One embodiment includes forming a front end of line (FEOL) for an integrated circuit (IC) chip; and forming at least one back end of line (BEOL) dielectric layer including ionizing radiation blocking material therein. Another embodiment includes forming a front end of line (FEOL) for an integrated circuit (IC) chip; and forming an ionizing radiation blocking layer positioned in a back end of line (BEOL) of the IC chip. The ionizing radiation blocking material or layer absorbs ionizing radiation and reduces soft errors within the IC chip.
摘要翻译：公开了阻止电离辐射以减少软错误的方法和产生的IC芯片。一个实施例包括形成用于集成电路（IC）芯片的线路前端（FEOL）; 以及在其中形成包括其中的电离辐射阻挡材料的至少一个后端线（BEOL）电介质层。另一实施例包括形成用于集成电路（IC）芯片的线路前端（FEOL）; 以及形成位于IC芯片的后端（BEOL）的电离辐射阻挡层。电离辐射阻挡材料或层吸收电离辐射并减少IC芯片内的软误差。

48. 发明授权

US07386817B1 Method of determining stopping powers of design structures with respect to a traveling particle 有权
标题翻译：确定设计结构相对于行进颗粒的停止力的方法
公开(公告)号：US07386817B1
公开(公告)日：2008-06-10
申请号：US11618993
申请日：2007-01-02
申请人： Giovanni Fiorenza , Conal E. Murray , Kenneth P. Rodbell , Henry Tang
发明人： Giovanni Fiorenza , Conal E. Murray , Kenneth P. Rodbell , Henry Tang
IPC分类号： G06F17/50 , G06F19/00 , G06G7/62
CPC分类号： G06F17/5009 , G06F2217/16
摘要： A method of determining a stopping power of a design structure with respect to a traveling particle. The method includes (i) providing design information of the design structure comprising a back-end-of-line layer which includes N interconnect layers, N being a positive integer, (ii) dividing each interconnect layer of the N interconnect layers into multiple pixels, and (iii) determining a first path of the traveling particle in a first interconnect layer of the N interconnect layers, (iv) identifying M path pixels of the multiple pixels of the first interconnect layer on the first path of the traveling particle, M being a positive integer, and (v) determining a first loss energy lost by the traveling particle due to its completely passing through a first pixel of the M path pixels.
摘要翻译：确定设计结构相对于行进颗粒的停止力的方法。该方法包括（i）提供设计结构的设计信息，该设计结构包括后端行层，其包括N个互连层，N为正整数，（ii）将N个互连层的每个互连层划分成多个像素，和（iii）确定所述N个互连层的第一互连层中的所述行进粒子的第一路径，（iv）识别所述行进粒子的所述第一路径上的所述第一互连层的所述多个像素的M个路径像素，M 作为正整数，以及（v）确定由于行进粒子完全通过M路径像素的第一像素而损失的第一损失能量。

49. 发明授权

US06909772B2 Method and apparatus for thin film thickness mapping 有权
标题翻译：用于薄膜厚度测绘的方法和装置
公开(公告)号：US06909772B2
公开(公告)日：2005-06-21
申请号：US10744413
申请日：2003-12-23
申请人： Krzysztof J. Kozaczek , David S. Kurtz , Paul R. Moran , Roger I. Martin , Patrick W. Dehaven , Kenneth P. Rodbell , Sandra G. Malhotra
发明人： Krzysztof J. Kozaczek , David S. Kurtz , Paul R. Moran , Roger I. Martin , Patrick W. Dehaven , Kenneth P. Rodbell , Sandra G. Malhotra
IPC分类号： G01B15/02 , G01N23/20
CPC分类号： G01N23/20 , G01B15/02
摘要： An apparatus and method for mapping film thickness of textured polycrystalline thin films. Multiple sample films of known thicknesses are provided, and each is irradiated by x-ray at a measurement point to generate a diffraction image that captures a plurality of diffraction arcs. Texture information (i.e., pole densities) of each sample film is calculated based on multiple incomplete pole figures collected from the diffraction image and used to correct the x-ray diffraction intensities obtained from such sample film. Corrected and integrated diffraction intensities of the sample films are then correlated to respective known film thicknesses of such films, and the correlation so determined can be used to map the film thickness of a textured polycrystalline thin film of unknown thickness, based on the corrected and integrated diffraction intensity calculated for such thin film.
摘要翻译：用于绘制纹理多晶薄膜的膜厚度的装置和方法。提供了已知厚度的多个样品膜，并且在测量点将X射线照射，以产生捕获多个衍射弧的衍射图像。基于从衍射图像收集的多个不完全极数来计算每个样品膜的纹理信息（即极点密度），并用于校正从这种样品膜获得的x射线衍射强度。然后将样品膜的校正和积分的衍射强度与这些膜的各自已知的膜厚度相关联，并且所确定的相关性可用于基于校正和积分的图形来绘制未知厚度的纹理多晶薄膜的膜厚度为这种薄膜计算的衍射强度。

50. 发明授权

US06870263B1 Device interconnection 失效
标题翻译：设备互连
公开(公告)号：US06870263B1
公开(公告)日：2005-03-22
申请号：US09052688
申请日：1998-03-31
申请人： Lawrence A. Clevenger , Ronald G. Filippi , Mark Hoinkis , Jeffery L. Hurd , Roy C. Iggulden , Herbert Palm , Hans W. Poetzlberger , Kenneth P. Rodbell , Florian Schnabel , Stefan Weber , Ebrahim A. Mehter
发明人： Lawrence A. Clevenger , Ronald G. Filippi , Mark Hoinkis , Jeffery L. Hurd , Roy C. Iggulden , Herbert Palm , Hans W. Poetzlberger , Kenneth P. Rodbell , Florian Schnabel , Stefan Weber , Ebrahim A. Mehter
IPC分类号： H01L21/28 , H01L21/768 , H01L23/485 , H01L23/532 , H01L23/48
CPC分类号： H01L21/76843 , H01L21/76807 , H01L21/76849 , H01L21/76876 , H01L23/485 , H01L23/53223 , H01L2924/0002 , H01L2924/00
摘要： A conductor for interconnecting integrated circuit components having improved reliability. The conductor includes a liner surrounding at least three surfaces of the conductor, producing a low textured conductor. It has been found that low textured conductor results in improved electromigration lifetime.
摘要翻译：用于互连具有改进的可靠性的集成电路部件的导体。导体包括围绕导体的至少三个表面的衬垫，产生低纹理导体。已经发现，低纹理导体导致改善的电迁移寿命。

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