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41. 再颁专利

USRE36161E Display process and apparatus thereof incorporating overlapping of color filters 失效
标题翻译：显示方法及其装置结合滤色器的重叠
公开(公告)号：USRE36161E
公开(公告)日：1999-03-23
申请号：US888791
申请日：1997-07-07
申请人： Yukitoshi Okubo , Yoshiyuki Osada , Masao Sugata , Katsunori Hatanaka , Takashi Nakagiri
发明人： Yukitoshi Okubo , Yoshiyuki Osada , Masao Sugata , Katsunori Hatanaka , Takashi Nakagiri
IPC分类号： G02F1/1335 , G02F1/1339 , G02F1/1362 , G02F1/1368 , G02F1/133
CPC分类号： G02F1/136213 , G02F1/1335 , G02F1/133512 , G02F1/136209 , G02F1/1368 , G02F1/13394
摘要： A display apparatus comprises a first substrate provided with a thin film transistor array as a driving switching element and a second substrate provided with another electrode, and produces a display by electro-optical change generated between these substrates. Visibility of the display is improved in such a way that rays of light incident on the display apparatus are converted into diffusion light. Photoconductive material, in particular amorphous silicon, can be used by covering semiconductive portions of the thin film transistor array of the display apparatus with an intercepting member. In a display apparatus using a thin film transistor array as a driving switching element, a conductive surface electrically insulated from gate lines on a substrate on where the gate lines for the thin film transistor array are formed, such conductive surface acts as a counter electrode of capacitors for storing charge. Therefore the counter electrode of capacitors is separately formed from gate lines, and writing driving voltage can be set without taking effects of voltage change of gate lines into consideration. Shading layers comprising a plurality of color filters also cover each of the thin film transistors.
摘要翻译：显示装置包括设置有作为驱动开关元件的薄膜晶体管阵列的第一基板和设置有另一电极的第二基板，并且通过在这些基板之间产生的电光变化产生显示。改善了显示器的可视性，使得入射到显示装置上的光线被转换为扩散光。光导材料，特别是非晶硅，可以通过用遮挡构件覆盖显示装置的薄膜晶体管阵列的半导体部分来使用。在使用薄膜晶体管阵列作为驱动开关元件的显示装置中，与形成有薄膜晶体管阵列的栅极线的基板上的栅极线电绝缘的导体表面用作相对电极用于存储电荷的电容器。因此，电容器的对电极由栅极线分开形成，并且可以设置写入驱动电压而不考虑栅极线的电压变化的影响。包括多个滤色器的遮蔽层也覆盖每个薄膜晶体管。

42. 再颁专利

USRE35275E Biasing liquid crystal displays having capacitors and transistors 失效
标题翻译：具有电容器和晶体管的偏置液晶显示器
公开(公告)号：USRE35275E
公开(公告)日：1996-06-18
申请号：US464368
申请日：1995-06-05
申请人： Yukitoshi Okubo , Yoshiyuki Osada , Masao Sugata , Katsunori Hatanaka , Takashi Nakagiri
发明人： Yukitoshi Okubo , Yoshiyuki Osada , Masao Sugata , Katsunori Hatanaka , Takashi Nakagiri
IPC分类号： G02F1/1335 , G02F1/1339 , G02F1/1362 , G02F1/1368 , G02F1/1333 , G09G3/36
CPC分类号： G02F1/136213 , G02F1/1335 , G02F1/133512 , G02F1/136209 , G02F1/1368 , G02F1/13394
摘要： A display apparatus comprises a first substrate provided with a thin film transistor array as a driving switching element and a second substrate provided with another electrode, and produces a display by electro-optical change generated between these substrates. Visibility of the display is improved in such a way that rays of light incident on the display apparatus are converted into diffusion light. Photoconductive material, in particular amorphous silicon, can be used by covering a semiconductive portions of the thin film transistor array of the display apparatus with an intercepting member. In a display apparatus using a thin film transistor array as a driving switching element, a conductive surface electrically insulated from gate lines on a substrate on which the gate lines for the thin film transistor array are formed, such conductive surface acts as a counter electrode of capacitors for storing charge. Therefore the counter electrode of capacitors is separately formed from gate lines, and writing driving voltage can be set without taking effects of voltage change of gate lines into consideration. Shading layers comprising a plurality of color filters also cover each of the thin film transistors.
摘要翻译：显示装置包括设置有作为驱动开关元件的薄膜晶体管阵列的第一基板和设置有另一电极的第二基板，并且通过在这些基板之间产生的电光变化产生显示。改善了显示器的可视性，使得入射到显示装置上的光线被转换为扩散光。光导材料，特别是非晶硅，可以通过用遮挡构件覆盖显示装置的薄膜晶体管阵列的半导体部分来使用。在使用薄膜晶体管阵列作为驱动开关元件的显示装置中，与形成有用于薄膜晶体管阵列的栅极线的基板上的栅极线电绝缘的导电表面用作相对电极用于存储电荷的电容器。因此，电容器的对电极由栅极线分开形成，并且可以设置写入驱动电压而不考虑栅极线的电压变化的影响。包括多个滤色器的遮蔽层也覆盖每个薄膜晶体管。

43. 发明授权

US4814842A Thin film transistor utilizing hydrogenated polycrystalline silicon 失效
标题翻译：利用氢化多晶硅的薄膜晶体管
公开(公告)号：US4814842A
公开(公告)日：1989-03-21
申请号：US201259
申请日：1988-05-25
申请人： Katsumi Nakagawa , Toshiyuki Komatsu , Yutaka Hirai , Satoshi Omata , Yoshiyuki Osada , Takashi Nakagiri
发明人： Katsumi Nakagawa , Toshiyuki Komatsu , Yutaka Hirai , Satoshi Omata , Yoshiyuki Osada , Takashi Nakagiri
IPC分类号： H01L21/205 , H01L27/12 , H01L29/78 , H01L29/786
CPC分类号： H01L29/78618 , H01L29/78 , H01L29/78675 , H01L29/78684
摘要： A thin film transistor comprises a substrate, a semiconductor layer comprising a polycrystalline silicon containing 3 atomic % or less of hydrogen provided on said substrate, a source region and a drain region provided in the surface part of said semiconductor layer, an insulating layer provided on said semiconductor layer at the portion between these two regions, a gate electrode provided on said insulating layer, a source electrode forming an electrical contact with the source region and a drain electrode forming an electrical contact with the drain region, the overlapping portions between said gate electrode through the insulating layer beneath said gate electrode and the source region and between said gate electrode through the insulating layer beneath said gate electrode and the drain region begin 2000 .ANG. or less in width.
摘要翻译：薄膜晶体管包括衬底，包括设置在所述衬底上的含有3原子％以下的氢的多晶硅的半导体层，设置在所述半导体层的表面部分中的源极区域和漏极区域，设置在所述衬底上的绝缘层所述半导体层位于这两个区域之间的部分，设置在所述绝缘层上的栅电极，与源区形成电接触的源电极和与漏区形成电接触的漏极，所述栅之间的重叠部分通过栅极电极和源极区域之间的绝缘层以及位于所述栅极电极和漏极区域之下的绝缘层的所述栅极电极之间的电极开始宽度为2000或更小。

44. 发明授权

US4761058A Biasing liquid crystal displays having capacitors and transistors 失效
标题翻译：具有电容器和晶体管的偏置液晶显示器
公开(公告)号：US4761058A
公开(公告)日：1988-08-02
申请号：US814277
申请日：1985-12-23
申请人： Yukitoshi Okubo , Yoshiyuki Osada , Masao Sugata , Katsunori Hatanaka , Takashi Nakagiri
发明人： Yukitoshi Okubo , Yoshiyuki Osada , Masao Sugata , Katsunori Hatanaka , Takashi Nakagiri
IPC分类号： G02F1/1335 , G02F1/1339 , G02F1/1362 , G02F1/1368 , G02F1/133 , G09G3/36 , H01L29/78
CPC分类号： G02F1/136213 , G02F1/1335 , G02F1/133512 , G02F1/136209 , G02F1/1368 , G02F1/13394
摘要： A display apparatus comprises a first substrate provided with a thin film transistor array as a driving switching element and a second substrate provided with another electrode, and produces a display by electro-optical change generated between these substrates. Visibility of the display is improved in such a way that rays of light incident on the display apparatus are converted into diffusion light. Photoconductive material, in particular amorphous silicon, can be used by covering semiconductive portions of the thin film transistor array of the display apparatus with an intercepting member. In a display apparatus using a thin film transistor array as a driving switching element, a conductive surface electrically insulated from gate lines on a substrate on where the gate lines for the thin film transistor array are formed, such conductive surface acts as a counter electrode of capacitors for storing charge. Therefore the counter electrode of capacitors is separately formed from gate lines, and writing driving voltage can be set without taking effects of voltage change of gate lines into consideration. Shading layers comprising a plurality of color filters also cover each of the thin film transistors.
摘要翻译：显示装置包括设置有作为驱动开关元件的薄膜晶体管阵列的第一基板和设置有另一电极的第二基板，并且通过在这些基板之间产生的电光变化产生显示。改善了显示器的可视性，使得入射到显示装置上的光线被转换为扩散光。光导材料，特别是非晶硅，可以通过用遮挡构件覆盖显示装置的薄膜晶体管阵列的半导体部分来使用。在使用薄膜晶体管阵列作为驱动开关元件的显示装置中，与形成有薄膜晶体管阵列的栅极线的基板上的栅极线电绝缘的导体表面用作相对电极用于存储电荷的电容器。因此，电容器的对电极由栅极线分开形成，并且可以设置写入驱动电压而不考虑栅极线的电压变化的影响。包括多个滤色器的遮蔽层也覆盖每个薄膜晶体管。

45. 发明授权

US4448867A Image forming method and device for same 失效
标题翻译：图像形成方法和装置相同
公开(公告)号：US4448867A
公开(公告)日：1984-05-15
申请号：US340459
申请日：1982-01-18
申请人： Yukitoshi Ohkubo , Yoshiyuki Osada , Masao Sugata , Takashi Nakagiri
发明人： Yukitoshi Ohkubo , Yoshiyuki Osada , Masao Sugata , Takashi Nakagiri
IPC分类号： G03G15/05 , B41M5/00 , G03G15/22 , G03G15/34 , G03G17/00 , G09F9/00 , H01L27/105 , H04N1/29 , G03G13/00 , G11C13/00
CPC分类号： H01L27/105 , G03G15/22 , G03G15/344 , G03G17/00 , H04N1/29
摘要： A method for forming images comprises applying voltage or electric charge to one or more electrodes selected from an electrode group comprising electrodes each of which has a transistor and attaching a toner to the selected electrodes. A device for forming images comprises an electrode group and a toner supplying device, each of electrodes of the electrode group being provided with a transistor.
摘要翻译：一种用于形成图像的方法包括将电压或电荷施加到从包括电极的电极组中选择的一个或多个电极，每个电极具有晶体管并将调色剂附着到所选择的电极。用于形成图像的装置包括电极组和调色剂供应装置，电极组的每个电极设置有晶体管。

46. 发明授权

US4397933A Hydrogenated amorphous silicon photoconductive layer 失效
标题翻译：氢化非晶硅光电导层
公开(公告)号：US4397933A
公开(公告)日：1983-08-09
申请号：US302454
申请日：1981-09-15
申请人： Masao Sugata , Masaki Fukaya , Takashi Nakagiri , Takaaki Yamagata , Yutaka Hirai
发明人： Masao Sugata , Masaki Fukaya , Takashi Nakagiri , Takaaki Yamagata , Yutaka Hirai
IPC分类号： G03G5/08 , C23C16/509 , G03G5/082 , G03G5/10 , H01L31/0248 , H01L31/09 , H01L31/20
CPC分类号： H01L31/095 , C23C16/5096 , G03G5/08214 , G03G5/08221 , G03G5/104 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： The hydrogenated amorphous silicon photoconductive layer has an infrared spectrum containing a peak at 880.+-.10 cm.sup.-1 (intensity of this peak being referred to as I.sub.A) and a peak at 970.+-.10 cm.sup.-1 (intensity of this peak being referred to as I.sub.B) in the infrared spectrum, the ratio I.sub.A /I.sub.B, being not more than 1.0.
摘要翻译：氢化非晶硅光电导层具有包含在880 +/- 10cm -1处的峰值（该峰的强度被称为IA）和在970 +/- 10cm -1处的峰（该峰的强度）的红外光谱被称为IB）在红外光谱中，比率IA / IB不大于1.0。

47. 发明授权

US4347436A Photoelectric transducing element with high polymer substrate 失效
标题翻译：具有高聚合物基底的光电转换元件
公开(公告)号：US4347436A
公开(公告)日：1982-08-31
申请号：US134150
申请日：1980-03-25
申请人： Tadaji Fukuda , Masao Sugata , Takashi Nakagiri , Masaki Konishi
发明人： Tadaji Fukuda , Masao Sugata , Takashi Nakagiri , Masaki Konishi
IPC分类号： H01L31/0248 , H01L31/02 , H01L31/0216 , H01L31/0224 , H01L31/0392 , H01L31/09 , H01J40/14
CPC分类号： H01L31/02161 , H01L31/0224 , H01L31/03921 , H01L31/095 , Y02E10/50
摘要： A photoelectric transducing element with a high polymer substrate, being characterized in that the element comprises a conductor layer formed on a flexible high polymer insulation film substrate and comprising at least one pair of independent conductor patterns and a photoelectric transducing layer superposed on the patterned portion of the conductor layer and consisting of a thin film of amorphous photoconductive material formed by means of a thin film forming means.
摘要翻译：一种具有高聚合物衬底的光电转换元件，其特征在于，元件包括形成在柔性高聚合物绝缘膜基底上的导体层，并且包括至少一对独立导体图案和叠加在图案化部分上的光电转换层该导体层由通过薄膜形成装置形成的非晶光导材料薄膜组成。

48. 发明授权

US4849774A Bubble jet recording apparatus which projects droplets of liquid through generation of bubbles in a liquid flow path by using heating means responsive to recording signals 失效
标题翻译：气泡喷射记录装置，其通过使用响应于记录信号的加热装置在液体流路中产生气泡而突出液滴
公开(公告)号：US4849774A
公开(公告)日：1989-07-18
申请号：US151281
申请日：1988-02-01
申请人： Ichiro Endo , Yasushi Sato , Seiji Saito , Takashi Nakagiri , Shigeru Ohno
发明人： Ichiro Endo , Yasushi Sato , Seiji Saito , Takashi Nakagiri , Shigeru Ohno
IPC分类号： B41J2/05 , B41J2/135 , B41J2/195 , B41J2/21
CPC分类号： B41J2/0458 , B41J2/04593 , B41J2/195 , B41J2/2128
摘要： A bubble jet recording apparatus comprises an inlet for accepting a liquid to be delivered to an outlet orifice through a liquid flow path. Liquid is supplied to the inlet for flow through the liquid flow path to a heating element, which heats liquid in the liquid flow path in response to recording signals. Heating is sufficient to cause a change of state of the liquid (that is, to generate a bubble) and produce a force acting on the liquid which overcomes the surface tension of liquid at the orifice and thereby projects a droplet of liquid from the orifice. The temperature of the heating element is raised at each actuation to a temperature above the maximum temperature at which the liquid is heated so as to promote substantially instantaneous transfer of heat to the liquid proximate to the heating element and to retard the transfer of heat from the heating element to liquid at other locations in the liquid floor path.
摘要翻译：气泡喷射记录装置包括用于接收通过液体流动路径输送到出口孔的液体的入口。液体被供应到入口以通过液体流动路径流到加热元件，加热元件响应于记录信号加热液体流动路径中的液体。加热足以引起液体状态的变化（即产生气泡）并产生作用在液体上的力，其克服了孔处液体的表面张力，从而从孔突出液滴。加热元件的温度在每次致动时升高到高于液体被加热的最高温度的温度，从而促使热量基本上瞬间传递到靠近加热元件的液体，并阻止热量从在液体地板路径中的其他位置处将元件加热到液体。

49. 发明授权

US4740829A Semiconductor device having a thin layer comprising germanium atoms as a matrix with a restricted range of hydrogen atom concentration 失效
标题翻译：具有包含锗原子作为基质的薄层的半导体器件具有限制的氢原子浓度范围
公开(公告)号：US4740829A
公开(公告)日：1988-04-26
申请号：US937432
申请日：1986-12-03
申请人： Takashi Nakagiri , Yutaka Hirai , Yoshiyuki Osada
发明人： Takashi Nakagiri , Yutaka Hirai , Yoshiyuki Osada
IPC分类号： H01L29/04 , H01L29/16 , H01L29/786 , H01L31/0368 , H01L31/113
CPC分类号： H01L29/04 , H01L29/16 , H01L29/78684 , H01L31/03682 , H01L31/1136 , Y02E10/546
摘要： A semiconductor device comprises a polycrystalline semiconductor thin film layer comprising germanium atoms as a matrix and containing 3 atomic % or less of hydrogen atoms.
摘要翻译：半导体器件包括包含锗原子作为基体并且含有3原子％以下的氢原子的多晶半导体薄膜层。

50. 发明授权

US4719501A Semiconductor device having junction formed from two different hydrogenated polycrystalline silicon layers 失效
标题翻译：具有由两个不同的氢化多晶硅层形成的结的半导体器件
公开(公告)号：US4719501A
公开(公告)日：1988-01-12
申请号：US815113
申请日：1985-12-26
申请人： Katsumi Nakagawa , Toshiyuki Komatsu , Yutaka Hirai , Yoshiyuki Osada , Satoshi Omata , Takashi Nakagiri
发明人： Katsumi Nakagawa , Toshiyuki Komatsu , Yutaka Hirai , Yoshiyuki Osada , Satoshi Omata , Takashi Nakagiri
IPC分类号： H01L21/285 , H01L29/04 , H01L29/786 , H01L29/812 , H01L29/872 , H01L31/0368 , H01L31/0392 , H01L31/108 , H01L31/18
CPC分类号： H01L21/28537 , H01L29/04 , H01L29/78675 , H01L29/78684 , H01L29/8126 , H01L29/872 , H01L31/03682 , H01L31/03921 , H01L31/108 , H01L31/18 , Y02E10/546
摘要： A semiconductor element is mainly composed of a polycrystalline Si thin film layer containing 0.01-3 atomic %, and further having a maximum surface unevenness of substantially not more than 800 .ANG. and/or a particular range of etching rate when etched with a predetermined etchant.
摘要翻译：半导体元件主要由含有0.01-3原子％的多晶Si薄膜层构成，并且当用预定的蚀刻剂进行蚀刻时，还具有基本上不大于800的最大表面凹凸和/或蚀刻速率的特定范围。

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