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41. 发明授权

US07031037B2 Holographic recording medium and holographic recording medium manufacturing method 失效
公开(公告)号：US07031037B2
公开(公告)日：2006-04-18
申请号：US10876028
申请日：2004-06-25
申请人： Akiko Hirao , Kazuki Matsumoto , Katsutaro Ichihara
发明人： Akiko Hirao , Kazuki Matsumoto , Katsutaro Ichihara
IPC分类号： G03H1/02
CPC分类号： G03H1/02 , G03H1/0256 , G03H2222/31 , G11B7/00781 , G11B7/0938 , G11B7/135 , G11B7/24044 , G11B7/2405 , G11B7/245 , G11B7/246 , G11B7/2472 , G11B7/248 , G11B7/249 , G11B7/2534 , G11B7/2575 , G11B7/2578 , G11B7/259 , G11B7/26 , G11B2007/25706 , G11B2007/25708 , G11B2007/2571 , G11B2007/25711 , G11B2007/25713 , G11B2007/25715 , G11B2007/25718
摘要： A holographic recording medium includes a transparent layer having a servo surface and a light incidence surface which face each other; a reflecting layer formed on the servo surface-side transparent layer; and a holographic recording layer formed on the light illuminating-side transparent layer. The transparent layer includes resin films laminated so that adjacent resin films differ in stretching direction by 90 degrees.

42. 发明申请

US20060077853A1 Apparatus and method for recording and reproducing hologram, and spatial light modulator therefor 失效
公开(公告)号：US20060077853A1
公开(公告)日：2006-04-13
申请号：US11209800
申请日：2005-08-24
申请人： Kazuki Matsumoto , Akiko Hirao , Rumiko Hayase , Takayuki Tsukamoto
发明人： Kazuki Matsumoto , Akiko Hirao , Rumiko Hayase , Takayuki Tsukamoto
IPC分类号： G11B7/00
CPC分类号： G11B7/128 , G11B7/0065 , G11B7/083
摘要： A hologram recording/reproducing apparatus includes a recording/reproducing optical system that guides at least one of an information beam and a reference beam to an optical recording medium; a spatial light modulator that is arranged in an optical path of the recording/reproducing optical system, and spatially modulates a beam guided via the recording/reproducing optical system to generate the information beam; a first misalignment detecting unit that detects a first misalignment between the recording/reproducing optical system and the spatial light modulator using a beam for detecting the first misalignment; and a first misalignment correcting unit that corrects the first misalignment based on the first misalignment detected by the first misalignment detecting unit.

43. 发明申请

US20060014081A1 Holographic recording medium and method of manufacturing the same 失效
公开(公告)号：US20060014081A1
公开(公告)日：2006-01-19
申请号：US11129403
申请日：2005-05-16
申请人： Rumiko Hayase , Akiko Hirao , Kazuki Matsumoto , Takayuki Tsukamoto , Katsutaro Ichihara , Urara Ichihara
发明人： Rumiko Hayase , Akiko Hirao , Kazuki Matsumoto , Takayuki Tsukamoto , Katsutaro Ichihara , Urara Ichihara
IPC分类号： G03H1/02 , G03C1/735
CPC分类号： G11B7/0065 , G03H2001/026 , G03H2001/0264 , G11B7/245 , G11B7/26
摘要： Disclosed is a holographic recording medium and methods of manufacturing the holographic recording medium. The example of the medium has a recording layer containing a three dimensionally cross-linked polymer matrix including an epoxy resin, a radically polymerizable monomer, and a photo radical polymerization initiator. The radically polymerizable monomer comprises both N-vinylcarbazole (VC) and N-vinylpyrrolidone (VP) or N-vinylcarbazole alone. The weight ratio of N-vinylcarbazole (VC) to the sum of N-vinylcarbazole (VC) and N-vinylpyrrolidone (VP), i.e., (VC/(VC+VP)), is not smaller than 0.75 and not larger than 1.0.

44. 发明申请

US20050026079A1 Recording medium 失效
标题翻译：录音媒体
公开(公告)号：US20050026079A1
公开(公告)日：2005-02-03
申请号：US10868803
申请日：2004-06-17
申请人： Naoko Kihara , Katsutaro Ichihara , Akiko Hirao , Kazuki Matsumoto , Hideyuki Nishizawa , Urara Ichihara
发明人： Naoko Kihara , Katsutaro Ichihara , Akiko Hirao , Kazuki Matsumoto , Hideyuki Nishizawa , Urara Ichihara
IPC分类号： G03F7/038 , G03C1/73 , G03F7/00 , G03F7/004 , G03F7/039 , G03H1/02 , G11B7/24 , G11B7/244
CPC分类号： G03F7/001 , G03F7/0045 , G03F7/039 , Y10S430/111 , Y10S430/115 , Y10S430/128
摘要： Disclosed is a recording medium comprising a recording layer including a photo-acid generating agent that generates an acid upon irradiation with an actinic radiation and a polymer having a polymerizable substituent group bonded to a main chain of the polymer via a functional group that cleaves in the presence of the acid.
摘要翻译：公开了一种记录介质，其包括记录层，该记录层包括在通过光化辐射照射时产生酸的光酸产生剂和具有通过在聚合物主链中切割的官能团而与聚合物主链键合的聚合性取代基的聚合物存在酸。

45. 发明授权

US06723628B2 Method for forming bonding pad structures in semiconductor devices 有权
标题翻译：在半导体器件中形成焊盘结构的方法
公开(公告)号：US06723628B2
公开(公告)日：2004-04-20
申请号：US09817935
申请日：2001-03-27
申请人： Kazuki Matsumoto , Yukio Morozumi , Michio Asahina
发明人： Kazuki Matsumoto , Yukio Morozumi , Michio Asahina
IPC分类号： H01L2144
CPC分类号： H01L24/05 , H01L21/32051 , H01L21/76801 , H01L21/76828 , H01L21/76829 , H01L21/76841 , H01L23/53223 , H01L24/03 , H01L24/45 , H01L24/48 , H01L2224/02126 , H01L2224/02166 , H01L2224/04042 , H01L2224/05082 , H01L2224/05083 , H01L2224/05124 , H01L2224/05157 , H01L2224/05166 , H01L2224/0517 , H01L2224/05179 , H01L2224/05187 , H01L2224/05624 , H01L2224/451 , H01L2224/48463 , H01L2224/85399 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01027 , H01L2924/01029 , H01L2924/01032 , H01L2924/0104 , H01L2924/01041 , H01L2924/0105 , H01L2924/04941 , H01L2924/1305 , H01L2924/13091 , H01L2924/04953 , H01L2224/45099 , H01L2924/00
摘要： Certain embodiments of the present invention relate to a semiconductor device that has a pad section having an excellent coherency with an interlayer dielectric layer, and a method for manufacturing the same. A semiconductor device 1000 has a pad layer 30A formed over an interlayer dielectric layer 20. The pad section 30A includes a wetting layer 32 and a metal wiring layer 37. The metal wiring layer 37 includes an alloy layer 34 that contacts the wetting layer 32. The alloy layer 34 is formed from a material composing the wetting layer 32 and a material composing the metal wiring layer 37.
摘要翻译：本发明的某些实施例涉及一种半导体器件，其具有与层间介质层具有优异相干性的焊盘部分及其制造方法。半导体器件1000具有在层间电介质层20上形成的焊盘层30A。焊盘部分30A包括润湿层32和金属布线层37.金属布线层37包括接触润湿层32的合金层34。合金层34由构成润湿层32的材料和构成金属布线层37的材料形成。

46. 发明授权

US06511910B2 Method for manufacturing semiconductor devices 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US06511910B2
公开(公告)日：2003-01-28
申请号：US10162361
申请日：2002-06-03
申请人： Michio Asahina , Eiji Suzuki , Kazuki Matsumoto , Naohiro Moriya
发明人： Michio Asahina , Eiji Suzuki , Kazuki Matsumoto , Naohiro Moriya
IPC分类号： H01L214763
CPC分类号： H01L21/76846 , H01L21/2855 , H01L21/76801 , H01L21/76819 , H01L21/76843 , H01L21/76855 , H01L21/76856 , H01L21/76864 , H01L21/76868 , H01L21/76886 , H01L23/485 , H01L23/53223 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a semiconductor substrate having a device element, an interlayer dielectric layer (silicon oxide layer, BPSG layer) formed on the semiconductor substrate, a through hole defined in the interlaver dielectric layer, a barrier layer formed on surfaces of the interlayer dielectric layer and the through hole, and a wiring layer formed on the barrier layer. The barrier layer includes a first metal oxide layer formed from an oxide of a metal that forms the barrier layer (e.g., a first titanium oxide layer), a metal nitride layer formed from a nitride of the metal that forms the barrier layer (e.g., a titanium nitride layer), and a second metal oxide layer formed from an oxide of the metal that forms the barrier layer (e.g., a second titanium oxide layer). The semiconductor device thus manufactured has a barrier layer of an excellent barrier capability.
摘要翻译：半导体器件包括具有器件元件的半导体衬底，形成在半导体衬底上的层间介电层（氧化硅层，BPSG层），在隔板电介质层中限定的通孔，形成在层间电介质的表面上的阻挡层层和通孔，以及形成在阻挡层上的布线层。阻挡层包括由形成阻挡层（例如，第一氧化钛层）的金属的氧化物形成的第一金属氧化物层，由形成阻挡层的金属的氮化物形成的金属氮化物层（例如，氮化钛层）和由形成阻挡层的金属的氧化物形成的第二金属氧化物层（例如，第二氧化钛层）。由此制造的半导体器件具有优异的阻挡能力的阻挡层。

47. 发明授权

US06486555B2 Semiconductor device having a contact structure using aluminum 有权
标题翻译：具有使用铝的接触结构的半导体器件
公开(公告)号：US06486555B2
公开(公告)日：2002-11-26
申请号：US09140016
申请日：1998-08-26
申请人： Michio Asahina , Junichi Takeuchi , Naohiro Moriya , Kazuki Matsumoto
发明人： Michio Asahina , Junichi Takeuchi , Naohiro Moriya , Kazuki Matsumoto
IPC分类号： H01L2348
CPC分类号： H01L21/76856 , H01L21/76814 , H01L21/76843 , H01L21/76877 , H01L23/485 , H01L23/53223 , H01L2924/0002 , H01L2924/00
摘要： A method of fabricating a semiconductor device comprises the following steps (a) to (f): (a) a step of forming a the contact hole in an interlayer dielectric formed on a semiconductor substrate including an electronic element; (b) a degassing step for removing gaseous components included within the interlayer dielectric, by thermal processing under a reduced pressure at a substrate temperature of 300° C. to 550° C.; (c) a step of forming a barrier layer on the interlayer dielectric and the contact hole; (d) a step of cooling the substrate to a temperature of no more than 100° C.; (e) a step of forming a first aluminum layer on the barrier layer, at a temperature of no more than 200° C., including aluminum or an alloy in which aluminum is the main component; and (f) a step is of forming a second aluminum layer on the first aluminum layer, at a temperature of at least 300° C., including aluminum or an alloy in which aluminum is the main component.
摘要翻译：一种制造半导体器件的方法包括以下步骤（a）至（f）：（a）在包括电子元件的半导体衬底上形成的层间电介质中形成接触孔的步骤; （b）通过在300℃至550℃的基板温度下在减压下热处理来去除包含在层间电介质中的气体组分的脱气步骤。（c）在所述层间电介质和所述接触孔上形成阻挡层的步骤; （d）将基板冷却至不超过100℃的温度; （e）在不超过200℃的温度下在阻挡层上形成第一铝层的步骤，包括铝或以铝为主要成分的合金; 和（f）步骤是在至少300℃的温度下在第一铝层上形成第二铝层，包括铝或其中以铝为主要成分的合金。

48. 发明授权

US06458703B2 Method for manufacturing semiconductor devices with allevration of thermal stress generation in conductive coating 失效
标题翻译：用于制造导电涂层中产生热应力的半导体器件的方法
公开(公告)号：US06458703B2
公开(公告)日：2002-10-01
申请号：US09389515
申请日：1999-09-03
申请人： Mamoru Endo , Junichi Takeuchi , Michio Asahina , Eiji Suzuki , Kazuki Matsumoto
发明人： Mamoru Endo , Junichi Takeuchi , Michio Asahina , Eiji Suzuki , Kazuki Matsumoto
IPC分类号： H01L2144
CPC分类号： H01L21/76856 , H01L21/28518 , H01L21/76828 , H01L21/76843 , H01L21/76877
摘要： A method for manufacturing a semiconductor device that fills contact holes with conductive material such as aluminum or an aluminum alloy. A semiconductor device is manufactured by the process of forming an opening such as a contact hole in an interlayer dielectric film formed on a semiconductor substrate having a device element formed thereon. A first film and a second film made of conductive material such as aluminum or an alloy containing aluminum are formed on the interlayer dielectric film and the opening. The second film is then gradually cooled.
摘要翻译：一种半导体器件的制造方法，其用诸如铝或铝合金的导电材料填充接触孔。通过在其上形成有器件元件的半导体衬底上形成的层间电介质膜中形成诸如接触孔的开口的方法来制造半导体器件。在层间电介质膜和开口上形成由铝或含有铝的合金的导电材料制成的第一膜和第二膜。然后第二个膜逐渐冷却。

49. 发明授权

US06429493B1 Semiconductor device and method for manufacturing semiconductor device 失效
标题翻译：半导体装置及半导体装置的制造方法
公开(公告)号：US06429493B1
公开(公告)日：2002-08-06
申请号：US09420025
申请日：1999-10-18
申请人： Michio Asahina , Eiji Suzuki , Kazuki Matsumoto , Naohiro Moriya
发明人： Michio Asahina , Eiji Suzuki , Kazuki Matsumoto , Naohiro Moriya
IPC分类号： H01L2348
CPC分类号： H01L21/76846 , H01L21/2855 , H01L21/76801 , H01L21/76819 , H01L21/76843 , H01L21/76855 , H01L21/76856 , H01L21/76864 , H01L21/76868 , H01L21/76886 , H01L23/485 , H01L23/53223 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a semiconductor substrate having a device element, an interlayer dielectric layer (silicon oxide layer, BPSG layer) formed on the semiconductor substrate, a through hole defined in the interlayer dielectric layer, a barrier layer formed on surfaces of the interlayer dielectric layer and the through hole, and a wiring layer formed on the barrier layer. The barrier layer includes a first metal oxide layer formed from an oxide of a metal that forms the barrier layer (e.g., a first titanium oxide layer), a metal nitride layer formed from a nitride of the metal that forms the barrier layer (e.g., a titanium nitride layer), and a second metal oxide layer formed from an oxide of the metal that forms the barrier layer (e.g., a second titanium oxide layer). The semiconductor device thus manufactured has a barrier layer of an excellent barrier capability.
摘要翻译：半导体器件包括具有器件元件的半导体衬底，形成在半导体衬底上的层间绝缘层（氧化硅层，BPSG层），层间绝缘层中限定的通孔，形成在层间电介质的表面上的阻挡层层和通孔，以及形成在阻挡层上的布线层。阻挡层包括由形成阻挡层（例如，第一氧化钛层）的金属的氧化物形成的第一金属氧化物层，由形成阻挡层的金属的氮化物形成的金属氮化物层（例如，氮化钛层）和由形成阻挡层的金属的氧化物形成的第二金属氧化物层（例如，第二氧化钛层）。由此制造的半导体器件具有优异的阻挡能力的阻挡层。

50. 发明授权

US06326287B1 Semiconductor device and method of fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06326287B1
公开(公告)日：2001-12-04
申请号：US09384210
申请日：1999-08-27
申请人： Michio Asahina , Kazuki Matsumoto , Eiji Suzuki
发明人： Michio Asahina , Kazuki Matsumoto , Eiji Suzuki
IPC分类号： H01L2120
CPC分类号： H01L21/76856 , H01L21/28518 , H01L21/2855 , H01L21/31612 , H01L21/31625 , H01L21/32051 , H01L21/76801 , H01L21/76802 , H01L21/76828 , H01L21/76843 , H01L21/76846 , H01L21/76877 , H01L23/485 , H01L23/53223 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device comprising a semiconductor substrate including an electronic element such as a MOSFET, interlayer dielectric (silicon oxide layer or BPSG layer) formed on the semiconductor substrate, a through-hole formed in the interlayer dielectric, a barrier layer formed on a surface of the interlayer dielectric and on a surface of the through-hole, and a metal wiring layer formed on the barrier layer. The metal wiring layer contains aluminum as its major component and 0.1 wt % to 3 wt % of beryllium. An aluminum alloy can be embedded in the through-hole without creation of any void or breaking of wire, and the semiconductor device is highly resistant to electro-migration.
摘要翻译：一种半导体器件，包括：半导体衬底，其包括形成在所述半导体衬底上的诸如MOSFET的电子元件，层间电介质（氧化硅层或BPSG层），形成在所述层间电介质中的通孔，形成在所述半导体衬底的表面上的阻挡层所述层间电介质和所述通孔的表面，以及形成在所述阻挡层上的金属布线层。金属配线层含有铝作为主要成分，0.1重量％〜3重量％的铍。铝合金可嵌入通孔中而不产生任何空隙或断线，半导体器件具有很高的抗电迁移能力。

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