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41. 发明授权

US08003547B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08003547B2
公开(公告)日：2011-08-23
申请号：US12850863
申请日：2010-08-05
申请人： Masanori Sakai
发明人： Masanori Sakai
IPC分类号： H01L21/31
CPC分类号： G05D7/0635 , C23C16/4485 , C23C16/52
摘要： A substrate processing apparatus, a method of manufacturing a semiconductor device, and a method of confirming an operation of a liquid flowrate control device are provided. The substrate processing apparatus comprises: a process chamber accommodating a substrate; a liquid source supply system supplying a liquid source into the process chamber; a solvent supply system supplying a solvent having a vapor pressure greater than that of the liquid source into the process chamber; a liquid flowrate control device controlling flowrates of the liquid source and the solvent; and a controller controlling the liquid source supply system, the solvent supply system, and the liquid flowrate control device so that the solvent is supplied into the liquid flowrate control device than the solvent supply system to confirm an operation of the liquid flowrate control device before the liquid source supply system supplies the liquid source into the process chamber.
摘要翻译：提供了一种基板处理装置，半导体装置的制造方法以及确认液体流量控制装置的操作的方法。基板处理装置包括：容纳基板的处理室; 液体源供应系统，将液体源供应到处理室中; 溶剂供应系统，将具有大于液体源的蒸气压的溶剂供应到处理室中; 控制液体源和溶剂的流量的液体流量控制装置; 以及控制液体源供给系统，溶剂供应系统和液体流量控制装置的控制器，使得溶剂供应到液体流量控制装置中而不是溶剂供应系统，以确认液体流量控制装置在液体源供应系统将液体源供应到处理室中。

42. 发明申请

US20110189865A1 ELECTRONIC APPARATUS 有权
标题翻译：电子设备
公开(公告)号：US20110189865A1
公开(公告)日：2011-08-04
申请号：US13019647
申请日：2011-02-02
申请人： Masanori Sakai , Taro Fuchigami
发明人： Masanori Sakai , Taro Fuchigami
IPC分类号： H01R12/00
CPC分类号： H01R12/00
摘要： Connector jacks are surface-mounted on one surface of a substrate. A reinforcing member reinforces the connector jacks. On the reinforcing member, a first reinforcing part, which is in contact with the back of the surface of the substrate on which the connector jack is mounted, and second reinforcing parts, which elastically urge the top surface of the connector jacks, are formed.
摘要翻译：连接器插座表面安装在基板的一个表面上。加强构件加强连接器插座。在加强构件上形成有与安装有连接器插座的基板的表面的背面接触的第一加强部和弹性地推压连接器插座的顶面的第二加强部。

43. 发明授权

US07742279B2 Energy conversion device 失效
标题翻译：能量转换装置
公开(公告)号：US07742279B2
公开(公告)日：2010-06-22
申请号：US12022208
申请日：2008-01-30
申请人： Hirofumi Takahashi , Kyoko Honbo , Masanori Sakai
发明人： Hirofumi Takahashi , Kyoko Honbo , Masanori Sakai
IPC分类号： H01G9/00
CPC分类号： H01M4/13 , H01G9/058 , H01G9/155 , H01M4/14 , H01M4/242 , H01M4/32 , H01M4/366 , H01M4/62 , H01M10/052 , H01M10/06 , H01M10/345
摘要： A secondary battery comprises a single-plate lead acid battery (Va), a positive electrode capacitor layer and a negative electrode capacitor layer, which are formed on the respective surfaces of a positive electrode plate, and a negative electrode plate. Each of the positive electrode plate and negative electrode plate contains an active material, to have a configuration in which activated carbon has a concentration gradient. The electronic resistance between a collector terminal and the center of a portion where activated carbon is present at a high concentration is lower than the electronic resistance between the collector terminal and the center of a portion where activated carbon is present at a low concentration. In the single-plate lead acid battery, charges are accumulated in the positive electrode capacitor layer and in the negative electrode capacitor layer.
摘要翻译：二次电池包括形成在正极板和负极板的各个表面上的单板铅酸蓄电池（Va），正电极电容器层和负极电容器层。正极板和负极板均含有活性物质，具有活性炭具有浓度梯度的结构。集电极端子与活性炭以高浓度存在的部分的中心之间的电子电阻低于集电极端子与活性炭以低浓度存在的部分的中心之间的电子电阻。在单板铅酸电池中，在正极电容器层和负极电容器层中蓄积电荷。

44. 发明申请

US20100009079A1 Method for processing substrate and substrate processing apparatus 审中-公开
标题翻译：基板和基板处理装置的处理方法
公开(公告)号：US20100009079A1
公开(公告)日：2010-01-14
申请号：US12457779
申请日：2009-06-22
申请人： Hirohisa Yamazaki , Yuji Takebayashi , Masanori Sakai , Tsutomu Kato
发明人： Hirohisa Yamazaki , Yuji Takebayashi , Masanori Sakai , Tsutomu Kato
IPC分类号： C23C16/455 , C23C16/40
CPC分类号： H01L21/0228 , C23C16/405 , C23C16/4412 , C23C16/45527 , C23C16/45557 , H01L21/02112 , H01L21/02205
摘要： There is provided a substrate processing method, comprising the steps of: supplying source gas into a processing chamber in which substrates are accommodated; removing the source gas and an intermediate body of the source gas remained in the processing chamber; supplying ozone into the processing chamber in a state of substantially stopping exhaust of an atmosphere in the processing chamber; and removing the ozone and the intermediate body of the ozone remained in the processing chamber; with these steps repeated multiple number of times, to thereby form an oxide film on the surface of the substrates by supplying the source gas and the ozone alternately so as not to be mixed with each other.
摘要翻译：提供了一种基板处理方法，包括以下步骤：将源气体供应到容纳基板的处理室中; 去除源气体和源气体的中间体残留在处理室中; 在基本上停止排出处理室中的气氛的状态下将臭氧供给到处理室中; 并且除去臭氧和中间体的臭氧残留在处理室中; 这些步骤重复多次，由此通过交替地供给源气体和臭氧而不使其彼此混合而在基板的表面上形成氧化膜。

45. 发明申请

US20090197424A1 Substrate processing apparatus and method for manufacturing semiconductor device 审中-公开
标题翻译：基板处理装置及半导体装置的制造方法
公开(公告)号：US20090197424A1
公开(公告)日：2009-08-06
申请号：US12320577
申请日：2009-01-29
申请人： Masanori Sakai , Yuji Takebayashi , Tsutomu Kato , Shinya Sasaki , Hirohisa Yamazaki
发明人： Masanori Sakai , Yuji Takebayashi , Tsutomu Kato , Shinya Sasaki , Hirohisa Yamazaki
IPC分类号： H01L21/30 , C23C16/54
CPC分类号： C23C16/4584 , C23C16/405 , C23C16/4412 , C23C16/45546 , C23C16/45591
摘要： A substrate processing apparatus according to the present invention promotes supplying gases to spaces between adjacent substrates without reducing the number of substrates which can be collectively processed. The substrate processing apparatus includes: a processing chamber for storing and processing substrates stacked in multiple stages in horizontal posture; at least one processing gas supply nozzle which extends running along an inner wall of the processing chamber in the stacking direction of the substrates and supplies a processing gas to the inside of the processing chamber; a pair of inactive gas supply nozzles which are provided so as to extend running along the inner wall of the processing chamber in the stacking direction of the substrates and so as to sandwich the processing gas supply nozzle from both sides thereof along the circumferential direction of the substrates and which supply the inactive gas to the inside of the processing chamber; and an exhaust line for exhausting the inside of the processing chamber.
摘要翻译：根据本发明的基板处理装置促进向相邻基板之间的空间供应气体，而不减少可以共同处理的基板的数量。基板处理装置包括：处理室，用于以水平姿态存储和处理以多级堆叠的基板; 至少一个处理气体供给喷嘴，其沿着所述处理室的内壁在所述基板的层叠方向上延伸，并且将处理气体供给到所述处理室的内部; 一对非活性气体供给喷嘴，沿着基板的堆叠方向沿着处理室的内壁延伸，并且沿着该基板的圆周方向从其两侧夹着处理气体供给喷嘴并且将惰性气体供应到处理室的内部; 以及用于排出处理室内部的排气管线。

46. 发明申请

US20080250619A1 Vertical type semiconductor device producing apparatus 有权
标题翻译：垂直型半导体器件制造装置
公开(公告)号：US20080250619A1
公开(公告)日：2008-10-16
申请号：US12155625
申请日：2008-06-06
申请人： Kazuyuki Okuda , Yasushi Yagi , Toru Kagaya , Masanori Sakai
发明人： Kazuyuki Okuda , Yasushi Yagi , Toru Kagaya , Masanori Sakai
IPC分类号： H01L21/67
CPC分类号： C23C16/45523 , C23C16/345 , Y10T29/41
摘要： A semiconductor device is produced by providing a reaction chamber with a substrate and sequentially repeating steps of: supplying a first kind of gas into the reaction chamber, exhausting the first kind of gas from the reaction chamber, supplying a second kind of gas into the reaction chamber, and exhausting the second kind of gas from the reaction chamber to process the substrate disposed in the reaction chamber. The first kind of gas is pre-reserved in an intermediate portion of a supply path through which the first kind of gas flows, and is supplied into the reaction chamber with exhaust of the reaction chamber being substantially stopped.
摘要翻译：通过向反应室提供衬底并依次重复以下步骤来制造半导体器件：将第一种气体供应到反应室中，从反应室排出第一种气体，向反应器中供应第二种气体并从反应室排出第二种气体，以处理设置在反应室中的基板。第一种气体预先保留在供应路径的中间部分，第一种气体通过该中间部分流动，并被供应到反应室中，反应室的排气基本停止。

47. 发明申请

US20080153309A1 Substrate Processing Apparatus and Semiconductor Device Producing Method 有权
标题翻译：基板加工装置及半导体装置生产方法
公开(公告)号：US20080153309A1
公开(公告)日：2008-06-26
申请号：US10592348
申请日：2005-03-11
申请人： Masanori Sakai , Tomohiro Yoshimura
发明人： Masanori Sakai , Tomohiro Yoshimura
IPC分类号： H01L21/00 , B05C11/10
CPC分类号： H01L21/0228 , C23C16/345 , C23C16/45525 , C23C16/45544 , C23C16/45546 , C23C16/45563 , C23C16/4584 , C23C16/509 , C23C16/52 , H01L21/0217 , H01L21/67017 , H01L21/67109 , H01L21/67253
摘要： Disclosed is a substrate processing apparatus, including: a processing chamber for processing a substrate; a substrate rotating mechanism for rotating the substrate; a gas supply unit for supplying gas to the substrate, at least two kinds of gases A and B being alternately supplied a plurality of times to form a desired film on the substrate; and a controller for controlling a rotation period of the substrate or a gas supply period defined as a time period between an instant when the gas A is made to flow and an instant when the gas A is made to flow next time such that the rotation period and the gas supply period are not brought into synchronization with each other at least while the alternate gas supply is carried out predetermined times.
摘要翻译：公开了一种基板处理装置，包括：处理基板的处理室; 用于旋转衬底的衬底旋转机构; 用于向基板供给气体的气体供给单元，至少两种气体A和B交替地供给多次以在基板上形成所需的膜; 以及控制器，用于控制基板的旋转周期或气体供给周期，其被定义为当气体A流动的时刻与下一次气体A流动的时刻之间的时间段，使得旋转周期并且至少在交替气体供给被执行预定次数时，气体供给周期不彼此同步。

48. 发明申请

US20070292974A1 Substrate Processing Method and Substrate Processing Apparatus 审中-公开
标题翻译：基板加工方法及基板加工装置
公开(公告)号：US20070292974A1
公开(公告)日：2007-12-20
申请号：US11664282
申请日：2006-01-27
申请人： Norikazu Mizuno , Taketoshi Sato , Masanori Sakai , Kazuyuki Okuda
发明人： Norikazu Mizuno , Taketoshi Sato , Masanori Sakai , Kazuyuki Okuda
IPC分类号： B05C11/00 , H01L21/00
CPC分类号： C23C16/45546 , C23C16/345 , C23C16/50 , H01L21/0217 , H01L21/0228 , H01L21/3141
摘要： Disclosed is a substrate processing method in which a plurality of processing gases are alternately supplied to and exhausted from a processing chamber forming a space in which a substrate or substrates are to be processed to form a desired thin film on the substrate or each of the substrates comprising transferring the substrate or the substrates into the processing chamber, and controlling a supply time of one of the plurality of the processing gases to control an amount of a chemical species which exists in the thin film and the existing amount of which a film stress depends on, thereby controlling the film stress of the thin film.
摘要翻译：公开了一种基板处理方法，其中多个处理气体被交替地供给到处理室并从其中排出，所述处理室形成要在其上处理基板或基板的空间，以在基板或每个基板上形成期望的薄膜包括将衬底或衬底转移到处理室中，并且控制多个处理气体中的一个处理气体的供给时间以控制存在于薄膜中的化学物质的量以及薄膜应力所依赖的现有量从而控制薄膜的薄膜应力。

49. 发明授权

US07167266B2 Image memory apparatus 失效
标题翻译：图像存储装置
公开(公告)号：US07167266B2
公开(公告)日：2007-01-23
申请号：US10754924
申请日：2004-01-12
申请人： Masanori Sakai , Toshihiro Kadowaki , Naoto Arakawa , Tetsuya Ohnishi
发明人： Masanori Sakai , Toshihiro Kadowaki , Naoto Arakawa , Tetsuya Ohnishi
IPC分类号： G06F3/12 , G06K15/00
CPC分类号： H04N1/00384 , H04N1/00352 , H04N1/00392 , H04N1/00411 , H04N1/00413 , H04N1/00416 , H04N1/00424 , H04N1/00427 , H04N1/00435 , H04N1/00437 , H04N1/0044 , H04N1/00466 , H04N1/00472 , H04N1/00474 , H04N1/00482 , H04N1/00816 , H04N1/32358 , H04N1/3875 , H04N1/6016 , H04N2201/218 , H04N2201/3287
摘要： An image memory apparatus includes a unit for storing input image information, a unit for designating a storing capacity of the storing unit for the input image information, and a control unit for performing storing control of the storing unit for the input image information in accordance with an instruction from the designating unit.
摘要翻译：图像存储装置包括：存储输入图像信息的单元，用于指定输入图像信息的存储单元的存储容量的单元;以及控制单元，用于根据输入图像信息对输入图像信息进行存储单元的存储控制来自指定单位的指示。

50. 发明申请

US20060258174A1 Substrate treatment apparatus and method of manufacturing semiconductor device 审中-公开
标题翻译：基板处理装置及半导体装置的制造方法
公开(公告)号：US20060258174A1
公开(公告)日：2006-11-16
申请号：US10549698
申请日：2004-07-09
申请人： Masanori Sakai , Toru Kagaya , Hirohisa Yamazaki
发明人： Masanori Sakai , Toru Kagaya , Hirohisa Yamazaki
IPC分类号： C23C16/00 , H01L21/31
CPC分类号： H01L21/3162 , C23C16/403 , C23C16/45546 , C23C16/4557 , C23C16/45578 , C23C16/46 , H01L21/02164 , H01L21/02178 , H01L21/02181 , H01L21/0228 , H01L21/3141 , H01L21/67109
摘要： A substrate treatment apparatus, comprising a reaction tube (203) and a heater (207) heating a silicon wafer (200), wherein trimethyl aluminum (TMA) and ozone (O3) are alternately fed into the reaction tube (203) to generate Al2O3 film on the surface of the wafer (200). The apparatus also comprises supply tubes (232a) and (232b) for flowing the ozone and TMA and a nozzle (233) supplying gas into the reaction tube (203). The two supply tubes (232a) and (232b) are connected to the nozzle (233) disposed inside the heater (207) in a zone inside the reaction tube (203) where a temperature is lower than a temperature near the wafer (200) and the ozone and TMA are supplied into the reaction tube (203) through the nozzle (233).
摘要翻译：一种基板处理装置，包括反应管（203）和加热硅晶片（200）的加热器（207），其中三甲基铝（TMA）和臭氧（O 3 3）交替地供给到反应管（203）以在晶片（200）的表面上产生Al 2 O 3 N 3膜。该设备还包括用于使臭氧和TMA流动的供应管（232a）和（232b）和向反应管（203）供应气体的喷嘴（233）。两个供应管（232a）和（232b）连接到设置在加热器（207）内部的喷嘴（233）内，反应管（203）内的温度低于晶片附近的温度 200），并且臭氧和TMA通过喷嘴（233）供应到反应管（203）中。

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