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41. 发明申请

US20090142908A1 METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE 有权
标题翻译：制造光电转换器件的方法
公开(公告)号：US20090142908A1
公开(公告)日：2009-06-04
申请号：US12324065
申请日：2008-11-26
申请人： Fumito Isaka , Sho Kato , Kosei Nei , Ryu Komatsu , Akihisa Shimomura , Koji Dairiki
发明人： Fumito Isaka , Sho Kato , Kosei Nei , Ryu Komatsu , Akihisa Shimomura , Koji Dairiki
IPC分类号： H01L21/203 , H01L21/36
CPC分类号： H01L31/1804 , H01L31/077 , Y02E10/547 , Y02P70/521
摘要： A photoelectric conversion device having an excellent photoelectric conversion characteristic is provided while effectively utilizing limited resources. A fragile layer is formed in a region at a depth of less than 1000 nm from one surface of a single crystal semiconductor substrate, and a first impurity semiconductor layer, a first electrode, and an insulating layer are formed on the one surface side of the single crystal semiconductor substrate. After bonding the insulating layer to a supporting substrate, the single crystal semiconductor substrate is separated with the fragile layer or its vicinity used as a separation plane, thereby forming a first single crystal semiconductor layer over the supporting substrate. A second single crystal semiconductor layer is formed by epitaxially growing a semiconductor layer on the first single crystal semiconductor layer in accordance with a plasma CVD method in which a silane based gas and hydrogen with a flow rate 50 times or more that of the silane gas are used as a source gas. A second impurity semiconductor layer which has a conductivity type opposite to that of the first impurity semiconductor layer is formed over the second single crystal semiconductor layer. A second electrode is formed over the second impurity semiconductor layer.
摘要翻译：提供具有优异的光电转换特性的光电转换装置，同时有效地利用有限的资源。在单晶半导体衬底的一个表面的深度小于1000nm的区域形成脆性层，在第一杂质半导体层，第一电极和绝缘层上形成有脆性层单晶半导体衬底。在将绝缘层粘合到支撑基板上之后，将单晶半导体基板与用作分离平面的易碎层或其附近分离，从而在支撑基板上形成第一单晶半导体层。第二单晶半导体层是通过以等离子体CVD法在第一单晶半导体层上外延生长半导体层而形成的，其中硅烷气体和氢气的流量为硅烷气体的50倍以上用作源气体。在第二单晶半导体层上形成具有与第一杂质半导体层相反的导电类型的第二杂质半导体层。在第二杂质半导体层上形成第二电极。

42. 发明申请

US20090142904A1 METHOD FOR MANUFACTURING SOI SUBSTRATE 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US20090142904A1
公开(公告)日：2009-06-04
申请号：US12277352
申请日：2008-11-25
申请人： Fumito Isaka , Sho Kato , Ryu Komatsu , Kosei Nei , Akihisa Shimomura
发明人： Fumito Isaka , Sho Kato , Ryu Komatsu , Kosei Nei , Akihisa Shimomura
IPC分类号： H01L21/762
CPC分类号： H01L27/1266 , H01L21/2007 , H01L21/32115 , H01L21/76254 , H01L27/1214 , H01L29/66772
摘要： A second single crystal semiconductor film is formed over a first single crystal semiconductor film; a separation layer is formed by addition of ions into the second single crystal semiconductor film; a second insulating film functioning as a bonding layer is formed over the second single crystal semiconductor film; a surface of a first SOI substrate and a surface of a second substrate are made to face each other, so that a surface of the second insulating film and the surface of the second substrate are bonded to each other; and then heat treatment is performed to cause cleavage at the separation layer, so that a second SOI substrate in which a part of the second single crystal semiconductor film is provided over the second substrate with the second insulating film interposed therebetween is formed.
摘要翻译：在第一单晶半导体膜上形成第二单晶半导体膜; 通过向第二单晶半导体膜中添加离子形成分离层; 用作接合层的第二绝缘膜形成在第二单晶半导体膜上; 使第一SOI衬底的表面和第二衬底的表面彼此面对，使得第二绝缘膜的表面和第二衬底的表面彼此接合; 然后进行热处理以在分离层处引起裂纹，从而形成第二SOI衬底，其中第二单晶半导体膜的一部分设置在第二衬底上，其间插入第二绝缘膜。

43. 发明申请

US20090117692A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件的制造方法
公开(公告)号：US20090117692A1
公开(公告)日：2009-05-07
申请号：US12261832
申请日：2008-10-30
申请人： Masaki Koyama , Fumito Isaka , Akihisa Shimomura , Junpei Momo , Shunpei Yamazaki
发明人： Masaki Koyama , Fumito Isaka , Akihisa Shimomura , Junpei Momo , Shunpei Yamazaki
IPC分类号： H01L21/336
CPC分类号： H01L27/1266 , H01L21/2007 , H01L21/32115 , H01L21/76254 , H01L27/1214 , H01L27/1218 , H01L27/1274 , H01L29/66772 , H01L29/78603
摘要： A single crystal semiconductor substrate bonded over a supporting substrate with a buffer layer interposed therebetween and having a separation layer is heated to separate the single crystal semiconductor substrate using the separation layer or a region near the separation layer as a separation plane, thereby forming a single crystal semiconductor layer over the supporting substrate. The single crystal semiconductor layer is irradiated with a laser beam to re-single-crystallize the single crystal semiconductor layer through melting. An impurity element is selectively added into the single crystal semiconductor layer to form a pair of impurity regions and a channel formation region between the pair of impurity regions. The single crystal semiconductor layer is heated at temperature which is equal to or higher than 400° C. and equal to or lower than a strain point of the supporting substrate and which does not cause melting of the single crystal semiconductor layer.
摘要翻译：加热粘合在支撑基板上的缓冲层之间并具有分离层的单晶半导体基板，使用分离层或分离层附近的区域作为分离平面分离单晶半导体基板，从而形成单个半导体基板晶体半导体层在支撑衬底上。用激光束照射单晶半导体层，通过熔融使单晶半导体层重新单晶化。在单晶半导体层中选择性地添加杂质元素，以在一对杂质区之间形成一对杂质区和沟道形成区。单晶半导体层在等于或高于400℃并等于或低于支撑衬底的应变点的温度下被加热，并且不会引起单晶半导体层的熔化。

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