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41. 发明授权

US07352421B2 Liquid crystal display apparatus and manufacturing method thereof 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US07352421B2
公开(公告)日：2008-04-01
申请号：US11364195
申请日：2006-03-01
申请人： Tadaki Nakahori , Nobuaki Ishiga , Kensuke Nagayama , Takuji Yoshida
发明人： Tadaki Nakahori , Nobuaki Ishiga , Kensuke Nagayama , Takuji Yoshida
IPC分类号： G02F1/1335
CPC分类号： G02F1/133555 , G02F1/133371 , G02F1/136227
摘要： A liquid crystal apparatus includes a TFT array substrate which includes gate wirings having a gate electrode, source wirings having a source electrode, a thin film transistor having the gate electrode, a semiconductor layer, the source electrode, and a drain electrode, an interlayer insulating film provided above the thin film transistor and the gate and source wirings, a transparent pixel electrode having a first transparent conductive film connected to the drain electrode through a contact hole, and put into contact with a surface of a insulating substrate through a pixel opening provided in a gate insulating film and the interlayer insulating film, a reflective pixel electrode made of an Al-alloy connected to the drain electrode, and a second transparent conductive film formed on the reflective electrode. The second transparent conductive film has a same pattern shape as the reflective pixel electrode and a thickness thereof is at least 5 nm.
摘要翻译：液晶装置包括TFT阵列基板，其包括具有栅电极的栅极布线，具有源电极的源极布线，具有栅电极的薄膜晶体管，半导体层，源电极和漏电极，层间绝缘设置在薄膜晶体管上方的薄膜晶体管和栅极和源极布线的透明像素电极，具有通过接触孔连接到漏极的第一透明导电膜的透明像素电极，并通过设置在像素开口处的像素开口与绝缘基板的表面接触在栅极绝缘膜和层间绝缘膜中，由连接到漏电极的Al合金制成的反射像素电极和形成在反射电极上的第二透明导电膜。第二透明导电膜具有与反射像素电极相同的图案形状，并且其厚度为至少5nm。

42. 发明申请

US20090230401A1 LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US20090230401A1
公开(公告)日：2009-09-17
申请号：US12401226
申请日：2009-03-10
申请人： Shingo NAGANO , Osamu Miyakawa , Nobuaki Ishiga
发明人： Shingo NAGANO , Osamu Miyakawa , Nobuaki Ishiga
IPC分类号： H01L33/00 , H01L21/28
CPC分类号： G02F1/134363 , H01L27/124
摘要： A liquid crystal display device includes a gate line placed above a substrate, a gate insulating layer to cover the gate line, a source line placed above the gate insulating layer, an interlayer insulating layer to cover the source line, a comb-shaped or slit-shaped pixel electrode electrically connected a drain electrode of a TFT through a contact hole penetrating the interlayer insulating layer, a first counter electrode placed below and opposite to the pixel electrode with an insulating layer interposed therebetween to generate an oblique electric field with the pixel electrode, and a second counter electrode formed in the same layer as the pixel electrode and placed overlapping the source line in a given area to generate an in-plane electric field with the pixel electrode.
摘要翻译：液晶显示装置包括位于基板上方的栅极线，覆盖栅极线的栅极绝缘层，栅极绝缘层上方的源极线，覆盖源极线的层间绝缘层，梳状或狭缝形状的像素电极通过穿过层间绝缘层的接触孔电连接TFT的漏电极，第一对置电极放置在像素电极的下方并与其相对的绝缘层上，以产生与像素电极的倾斜电场以及形成在与像素电极相同的层中并且在给定区域中与源极重叠的第二对电极以与像素电极产生面内电场。

43. 发明申请

US20070295963A1 TFT ARRAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译： TFT阵列基板及其制造方法
公开(公告)号：US20070295963A1
公开(公告)日：2007-12-27
申请号：US11762398
申请日：2007-06-13
申请人： Shinichi YANO , Tadaki Nakahori , Nobuaki Ishiga
发明人： Shinichi YANO , Tadaki Nakahori , Nobuaki Ishiga
IPC分类号： H01L29/04
CPC分类号： H01L29/4908 , H01L27/12 , H01L27/124 , H01L29/458
摘要： A TFT array substrate includes a TFT having an ohmic contact film and a source electrode and a drain electrode formed on the ohmic contact film. It also includes a pixel electrode electrically connected with the drain electrode. The source electrode and the drain electrode are made of an Al alloy containing Ni as an additive.
摘要翻译： TFT阵列基板包括具有欧姆接触膜和形成在欧姆接触膜上的源电极和漏电极的TFT。它还包括与漏电极电连接的像素电极。源电极和漏极由含有Ni作为添加剂的Al合金制成。

44. 发明申请

US20060267120A1 Liquid crystal display apparatus and manufacturing method thereof 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US20060267120A1
公开(公告)日：2006-11-30
申请号：US11364195
申请日：2006-03-01
申请人： Tadaki Nakahori , Nobuaki Ishiga , Kensuke Nagayama , Takuji Yoshida
发明人： Tadaki Nakahori , Nobuaki Ishiga , Kensuke Nagayama , Takuji Yoshida
IPC分类号： H01L29/82
CPC分类号： G02F1/133555 , G02F1/133371 , G02F1/136227
摘要： A liquid crystal apparatus includes a TFT array substrate which includes gate wirings having a gate electrode, source wirings having a source electrode, a thin film transistor having the gate electrode, a semiconductor layer, the source electrode, and a drain electrode, an interlayer insulating film provided above the thin film transistor and the gate and source wirings, a transparent pixel electrode having a first transparent conductive film connected to the drain electrode through a contact hole, and put into contact with a surface of a insulating substrate through a pixel opening provided in a gate insulating film and the interlayer insulating film, a reflective pixel electrode made of an Al-alloy connected to the drain electrode, and a second transparent conductive film formed on the reflective electrode. The second transparent conductive film has a same pattern shape as the reflective pixel electrode and a thickness thereof is at least 5 nm.
摘要翻译：液晶装置包括TFT阵列基板，其包括具有栅电极的栅极布线，具有源电极的源极布线，具有栅电极的薄膜晶体管，半导体层，源电极和漏电极，层间绝缘设置在薄膜晶体管上方的薄膜晶体管和栅极和源极布线的透明像素电极，具有通过接触孔连接到漏极的第一透明导电膜的透明像素电极，并通过设置在像素开口处的像素开口与绝缘基板的表面接触在栅极绝缘膜和层间绝缘膜中，由连接到漏电极的Al合金制成的反射像素电极和形成在反射电极上的第二透明导电膜。第二透明导电膜具有与反射像素电极相同的图案形状，并且其厚度为至少5nm。

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