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41. 发明授权

US07179703B2 Method of forming shallow doped junctions having a variable profile gradation of dopants 有权
标题翻译：形成具有可变轮廓层级的掺杂剂的浅掺杂结的方法
公开(公告)号：US07179703B2
公开(公告)日：2007-02-20
申请号：US11259489
申请日：2005-10-25
申请人： Fernando Gonzalez , Randhir Thakur
发明人： Fernando Gonzalez , Randhir Thakur
IPC分类号： H01L21/8238
CPC分类号： H01L29/6659 , H01L21/2236 , H01L21/26513 , H01L21/2652 , H01L29/66575 , H01L29/7833 , H01L29/7836 , Y10S257/90
摘要： Disclosed are methods for forming a shallow junction with a variable concentration profile gradation of dopants. The process of the present invention includes first providing and masking a surface on an in-process integrated circuit wafer on which the shallow junction is to be formed. Next, a low ion velocity and low energy ion bombardment plasma doping or PLAD operation is conducted to provide a highly doped inner portion of a shallow junction. In a further step, a higher ion velocity and energy conventional ion bombardment implantation doping operation is conducted using a medium power implanter to extend the shallow junction boundaries with a lightly doped outer portion. In various embodiments, the doping steps can be performed in reverse order. In addition, an anneal step can be performed after any doping operation.
摘要翻译：公开了用于形成具有可变浓度分布层级的掺杂剂的浅结的方法。本发明的方法包括首先提供和掩蔽要在其上形成浅结的过程中集成电路晶片上的表面。接下来，进行低离子速度和低能离子轰击等离子体掺杂或PLAD操作以提供浅结的高掺杂内部部分。在另一步骤中，使用中功率注入机进行较高的离子速度和能量常规的离子轰击注入掺杂操作，以用轻掺杂的外部部分延伸浅结边界。在各种实施例中，可以以相反的顺序执行掺杂步骤。此外，可以在任何掺杂操作之后执行退火步骤。

42. 发明申请

US20060266389A1 Method and apparatus for wafer cleaning 审中-公开
公开(公告)号：US20060266389A1
公开(公告)日：2006-11-30
申请号：US11496826
申请日：2006-07-31
申请人： Randhir Thakur , Steven Verhaverbeke , J. Truman
发明人： Randhir Thakur , Steven Verhaverbeke , J. Truman
IPC分类号： B08B3/02
CPC分类号： H01L21/67051 , B08B3/024 , B08B3/12
摘要： A single wafer cleaning apparatus that includes a rotatable bracket that can hold a wafer, a rinse fluid having a first surface tension, a second fluid having a second surface tension lower than the first surface tension, a first nozzle capable of applying the rinse fluid at a first location on the wafer positioned in the bracket, second nozzle capable of applying the second fluid at a second location on the wafer where the second location is inboard of the first location, and the first nozzle and the second nozzle are capable of moving across the wafer to translate the first location and the second location from the wafer center to the wafer outer edge.

43. 发明申请

US20060199311A1 ANTIFUSE HAVING TANTALUM OXYNITRIDE FILM AND METHOD FOR MAKING SAME 审中-公开
标题翻译：具有氧化铝薄膜的抗菌剂及其制备方法
公开(公告)号：US20060199311A1
公开(公告)日：2006-09-07
申请号：US11419942
申请日：2006-05-23
申请人： Scott DeBoer , Husam Al-Shareef , Randhir Thakur , Dan Gealy
发明人： Scott DeBoer , Husam Al-Shareef , Randhir Thakur , Dan Gealy
IPC分类号： H01L21/82
CPC分类号： H01L21/02326 , G11C17/16 , H01L21/02183 , H01L21/02271 , H01L21/02337 , H01L21/0234 , H01L21/31604 , H01L21/31637 , H01L23/5252 , H01L27/10852 , H01L27/10861 , H01L27/112 , H01L27/11206 , H01L28/40 , H01L28/65 , H01L28/84 , H01L2924/0002 , H01L2924/00
摘要： A capacitor has a tantalum oxynitride film. One method for making the film comprises forming a bottom plate electrode and then forming a tantalum oxide film on the bottom plate electrode. Nitrogen is introduced to form a tantalum oxynitride film. A top plate electrode is formed on the tantalum oxynitride film. Embodiments include a method of operating an antifuse, comprising applying a voltage across electrodes of a capacitor having a tantalum oxynitride film and forming a hole in the tantalum oxynitride film.
摘要翻译：电容器具有氮氧化钽膜。制造薄膜的一种方法包括形成底板电极，然后在底板电极上形成氧化钽膜。引入氮气以形成氮氧化钽膜。在氮氧化钽膜上形成顶板电极。实施例包括操作反熔丝的方法，包括在具有氮氧化钽膜的电容器的电极上施加电压并在氮氧化钽膜中形成孔。

44. 发明申请

US20060035473A1 Method for stabilizing high pressure oxidation of a semiconductor device 失效
标题翻译：稳定半导体器件的高压氧化的方法
公开(公告)号：US20060035473A1
公开(公告)日：2006-02-16
申请号：US11251973
申请日：2005-10-17
申请人： F. Gealy , Dave Chapek , Scott DeBoer , Husam Al-Shareef , Randhir Thakur
发明人： F. Gealy , Dave Chapek , Scott DeBoer , Husam Al-Shareef , Randhir Thakur
IPC分类号： H01L21/31
CPC分类号： H01L21/28202 , C30B33/005 , H01L21/02183 , H01L21/02197 , H01L21/02271 , H01L21/31662 , H01L29/518 , Y10S438/903
摘要： A method and apparatus for preventing N2O from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace are disclosed. The method and apparatus utilize a catalyst to catalytically disassociate N2O as it enters the high pressure oxidation furnace. This catalyst is used in an environment of between five atmospheres and 25 atmospheres N2O and a temperature range of 600° to 750° C., which are the conditions that lead to the N2O going super critical. By preventing the N2O from becoming super critical, the reaction is controlled that prevents both temperature and pressure spikes. The catalyst can be selected from the group of noble transition metals and their oxides. This group can comprise palladium, platinum, iridium, rhodium, nickel, silver, and gold.
摘要翻译：公开了一种在高压氧化炉内的高压氧化阶段防止N 2 O变得超临界的方法和装置。该方法和装置利用催化剂在进入高压氧化炉时催化分解N 2 O 2。该催化剂在五个大气压和25个大气压N 2 O 2的温度范围和600℃至750℃的温度范围内使用，这是导致N 2 O超级关键。通过防止N 2 O 2变得超临界，控制反应以防止温度和压力尖峰。催化剂可以选自贵金属过渡金属及其氧化物。该组可以包括钯，铂，铱，铑，镍，银和金。

45. 发明申请

US20050260357A1 Stabilization of high-k dielectric materials 有权
标题翻译：高k电介质材料的稳定化
公开(公告)号：US20050260357A1
公开(公告)日：2005-11-24
申请号：US10851514
申请日：2004-05-21
申请人： Christopher Olsen , Pravin Narwankar , Shreyas Kher , Randhir Thakur , Shankar Muthukrishnan , Philip Kraus
发明人： Christopher Olsen , Pravin Narwankar , Shreyas Kher , Randhir Thakur , Shankar Muthukrishnan , Philip Kraus
IPC分类号： C23C16/40 , C23C16/455 , C23C16/56 , H01L21/28 , H01L21/314 , H01L21/316 , B05D7/00
CPC分类号： H01L21/3141 , C23C16/401 , C23C16/405 , C23C16/45529 , C23C16/56 , H01L21/28202 , H01L21/3143 , H01L21/31637 , H01L21/31645 , H01L29/517
摘要： In one embodiment, a method for forming a dielectric stack on a substrate is provided which includes depositing a first layer of a dielectric material on a substrate surface, exposing the first layer to a nitridation process, depositing a second layer of the dielectric material on the first layer, exposing the second layer to the nitridation process, and exposing the substrate to an anneal process. In another embodiment, a method for forming a dielectric material on a substrate is provided which includes depositing a metal oxide layer substantially free of silicon on a substrate surface, exposing the metal oxide layer to a nitridation process, and exposing the substrate to an anneal process.
摘要翻译：在一个实施例中，提供了一种在衬底上形成电介质堆叠的方法，其包括在衬底表面上沉积介电材料的第一层，将第一层暴露于氮化工艺，将第二层介电材料沉积在第一层，将第二层暴露于氮化工艺，并将衬底暴露于退火工艺。在另一个实施例中，提供了一种用于在衬底上形成介电材料的方法，其包括在衬底表面上沉积基本上不含硅的金属氧化物层，将金属氧化物层暴露于氮化工艺，以及将衬底暴露于退火工艺。

46. 发明申请

US20050153569A1 Process for growing a dielectric layer on a silicon-containing surface using a mixture of N2O and O3 有权
标题翻译：使用N2O和O3的混合物在含硅表面上生长电介质层的方法
公开(公告)号：US20050153569A1
公开(公告)日：2005-07-14
申请号：US11075187
申请日：2005-03-08
申请人： Gurtej Sandhu , Randhir Thakur
发明人： Gurtej Sandhu , Randhir Thakur
IPC分类号： H01L21/28 , H01L21/316 , H01L29/51 , H01L21/31 , C23C14/10 , H01L21/336 , H01L21/469
CPC分类号： H01L21/28202 , H01L21/0214 , H01L21/02249 , H01L21/02255 , H01L21/28185 , H01L21/28211 , H01L21/31662 , H01L21/32105 , H01L29/518
摘要： This invention is embodied in an improved process for growing high-quality silicon dioxide layers on silicon by subjecting it to a gaseous mixture of nitrous oxide (N2O) and ozone (O3). The presence of O3 in the oxidizing ambiance greatly enhances the oxidation rate compared to an ambiance in which N2O is the only oxidizing agent. In addition to enhancing the oxidation rate of silicon, it is hypothesized that the presence of O3 interferes with the growth of a thin silicon oxynitride layer near the interface of the silicon dioxide layer and the unreacted silicon surface which makes oxidation in the presence of N2O alone virtually self-limiting. The presence of O3 in the oxidizing ambiance does not impair oxide reliability, as is the case when silicon is oxidized with N2O in the presence of a strong, fluorine-containing oxidizing agent such as NF3 or SF6.
摘要翻译：本发明体现在用于通过使其经受一氧化二氮（N 2 O 2 O）和臭氧（O 3 O 3）的气体混合物在硅上生长高质量二氧化硅层的改进方法， SUB>）。氧化气氛中O 3 3的存在与其中N 2 O 2是唯一的氧化剂的环境相比，大大地提高了氧化速率。除了提高硅的氧化速率之外，假设O 3 3的存在妨碍了二氧化硅层和未反应的硅表面界面附近的薄氧氮化硅层的生长，在N 2 O 2存在下进行氧化，实际上是自限制的。氧化气氛中的O 3 3的存在不会损害氧化物的可靠性，如在强的氟化物存在下用N 2 O 2氧化硅的情况，含有氧化剂如NF 3或SF 6。

47. 发明申请

US20050028936A1 Apparatus for stabilizing high pressure oxidation of a semiconductor device 有权
标题翻译：用于稳定半导体器件的高压氧化的装置
公开(公告)号：US20050028936A1
公开(公告)日：2005-02-10
申请号：US10933890
申请日：2004-09-02
申请人： F. Gealy , Dave Chapek , Scott DeBoer , Husam Al-shareef , Randhir Thakur
发明人： F. Gealy , Dave Chapek , Scott DeBoer , Husam Al-shareef , Randhir Thakur
IPC分类号： C30B33/00 , H01L21/316 , C23F1/00
CPC分类号： H01L21/28202 , C30B33/005 , H01L21/02183 , H01L21/02197 , H01L21/02271 , H01L21/31662 , H01L29/518 , Y10S438/903
摘要： A method and apparatus for preventing N2O from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace are disclosed. The method and apparatus utilize a catalyst to catalytically disassociate N2O as it enters the high pressure oxidation furnace. This catalyst is used in an environment of between five (5) atmospheres to twenty-five (25) atmospheres N20 and a temperature range of 600° to 750° C., which are the conditions that lead to the N2O going super critical. By preventing the N2O from becoming super critical, the reaction is controlled that prevents both temperature and pressure spikes. The catalyst can be selected from the group of noble transition metals and their oxides. This group can comprise palladium, platinum, iridium, rhodium, nickel, silver, and gold.
摘要翻译：公开了一种在高压氧化炉内高压氧化阶段防止N2O变得超临界的方法和装置。该方法和装置利用催化剂在进入高压氧化炉时催化分解N2O。该催化剂用于在五（5）大气压至二十五（25）个大气压二氧化氮和600℃至750℃的温度范围的环境中，这是导致N2O变得超临界的条件。通过防止N2O变得超临界，可以控制反应，防止温度和压力尖峰。催化剂可以选自贵金属过渡金属及其氧化物。该组可以包括钯，铂，铱，铑，镍，银和金。

48. 发明授权

US06803297B2 Optimal spike anneal ambient 失效
公开(公告)号：US06803297B2
公开(公告)日：2004-10-12
申请号：US10251440
申请日：2002-09-20
申请人： Dean Jennings , Sairaju Tallavarjula , Randhir Thakur
发明人： Dean Jennings , Sairaju Tallavarjula , Randhir Thakur
IPC分类号： H01L21425
CPC分类号： H01L21/67115 , H01L21/324 , H01L21/67109
摘要： A method for activating implanted dopants in a semiconductor substrate to form shallow junctions comprises the steps of: maintaining gas pressure in the processing chamber at a level significantly lower than atmospheric pressure, providing a flow of a carrier gas into the processing chamber, subjecting the substrate to a temperature treatment process, and introducing oxygen into the processing chamber during all or part of the temperature treatment process.

49. 发明授权

US06737696B1 DRAM capacitor formulation using a double-sided electrode 失效
标题翻译： DRAM电容器配方采用双面电极
公开(公告)号：US06737696B1
公开(公告)日：2004-05-18
申请号：US09089445
申请日：1998-06-03
申请人： Scott J. DeBoer , Husam Al-Shareef , Randhir Thakur
发明人： Scott J. DeBoer , Husam Al-Shareef , Randhir Thakur
IPC分类号： H01L27108
CPC分类号： H01L27/10852 , H01L21/31604 , H01L27/10811 , H01L27/10888 , H01L28/55 , H01L28/91
摘要： A capacitor having a double sided electrode for enhanced capacitance. In one embodiment, the double sided electrode capacitor is a stacked container capacitor used in a dynamic random access memory circuit. The double sided electrode is preferably formed of a conductive metal, provided that an oxide of the metal is conductive. The double sided electrode capacitor provides a capacitor that has high storage capacitance which provides an increased efficiency for a cell without an increase in the size of the cell.
摘要翻译：具有用于增强电容的双面电极的电容器。在一个实施例中，双面电极电容器是用于动态随机存取存储器电路中的层叠容器电容器。双面电极优选由导电金属形成，只要金属的氧化物是导电的。双面电极电容器提供具有高存储电容的电容器，其在不增加电池尺寸的情况下为电池提供增加的效率。

50. 发明授权

US06717211B2 Shallow doped junctions with a variable profile gradation of dopants 失效
标题翻译：具有可变轮廓层次的掺杂剂的浅掺杂结
公开(公告)号：US06717211B2
公开(公告)日：2004-04-06
申请号：US09981549
申请日：2001-10-17
申请人： Fernando Gonzalez , Randhir Thakur
发明人： Fernando Gonzalez , Randhir Thakur
IPC分类号： H01L2976
CPC分类号： H01L29/6659 , H01L21/2236 , H01L21/26513 , H01L21/2652 , H01L29/66575 , H01L29/7833 , H01L29/7836 , Y10S257/90
摘要： An electrical device including a shallow junction with a variable concentration profile gradation of dopants. The junction is suitable for forming source and drain regions in MOS transistors, especially where a contact or interconnect is intended to engage the source and drain regions. The variable concentration profile gradation of dopants helps to maintain proper threshold voltage levels and reduces reverse bias current leakage. The electrical device includes a semiconductor substrate having a top surface, a gate region overlapping a portion of the semiconductor substrate, and a source/drain region disposed within the semiconductor substrate. The source/drain region includes an inner portion and an outer portion, wherein the inner portion extends from the top surface of the semiconductor substrate to a bottom periphery and does not underlap the gate region, and the outer portion extends from the bottom periphery of the inner portion and underlaps the gate region. An electrical insulation layer is situated upon the gate region and overlaps the source/drain region.
摘要翻译：包括具有可变浓度分布层级的掺杂剂的浅结的电气装置。该结适用于在MOS晶体管中形成源极和漏极区域，特别是在接触或互连用于接合源极和漏极区域的情况下。掺杂剂的可变浓度分布层次有助于保持适当的阈值电压电平并减少反向偏置电流泄漏。电气装置包括具有顶表面，与半导体衬底的一部分重叠的栅极区域和设置在半导体衬底内的源极/漏极区域的半导体衬底。源极/漏极区域包括内部部分和外部部分，其中内部部分从半导体衬底的顶表面延伸到底部周边，并且不会使栅极区域下凹，并且外部部分从底部周边延伸内部部分并且使栅极区域重叠。电绝缘层位于栅极区上并与源极/漏极区重叠。

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