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    • 41. 发明申请
    • MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC HEAD, AND MAGNETIC REPRODUCING APPARATUS
    • 磁阻效应元件,磁头和磁力再生装置
    • US20070259213A1
    • 2007-11-08
    • US11741900
    • 2007-04-30
    • Susumu HASHIMOTOKatsuhiko KouiMasashi SahashiHitoshi Iwasaki
    • Susumu HASHIMOTOKatsuhiko KouiMasashi SahashiHitoshi Iwasaki
    • G11B5/39
    • H01L43/08G11B5/3906H01L43/12Y10T428/1121
    • A magnetoresistance effect element comprises: a magnetoresistance effect film, a pair of electrodes, and a phase separation layer. The magnetoresistance effect film includes a first ferromagnetic layer whose direction of magnetization is pinned substantially in one direction, a second ferromagnetic layer whose direction of magnetization changes in response to an external magnetic field, and an intermediate layer provided between the first and second ferromagnetic layers. The pair of electrodes are electrically coupled to the magnetoresistance effect film and configured to supply a sense current perpendicularly to a film plane of the magnetoresistance effect film. The phase separation layer is provided between the pair of electrodes. The phase separation layer has a first phase and a second phase formed by a phase separation in a solid phase from an alloy including a plurality of elements. One of the first and second phases includes at least one element selected from the group consisting of oxygen, nitrogen, fluorine and carbon in higher concentration than other of the first and second phases.
    • 磁阻效应元件包括:磁阻效应膜,一对电极和相分离层。 磁阻效应膜包括其磁化方向基本上被固定在一个方向上的第一铁磁层,其磁化方向响应于外部磁场而变化的第二铁磁性层和设置在第一和第二铁磁层之间的中间层。 一对电极电耦合到磁阻效应膜并且被配置为提供垂直于磁阻效应膜的膜平面的感测电流。 相分离层设置在该对电极之间。 相分离层具有通过从包含多个元素的合金固相中相分离而形成的第一相和第二相。 第一和第二相中的一个包括选自氧,氮,氟和碳中的至少一种元素,其浓度高于第一相和第二相中的其它相。
    • 42. 发明授权
    • Magnetoresistance effect element, magnetic head, and magnetic reproducing apparatus
    • 磁阻效应元件,磁头和磁再现装置
    • US07218484B2
    • 2007-05-15
    • US10659299
    • 2003-09-11
    • Susumu HashimotoKatsuhiko KouiMasashi SahashiHitoshi Iwasaki
    • Susumu HashimotoKatsuhiko KouiMasashi SahashiHitoshi Iwasaki
    • G11B5/39
    • H01L43/08G11B5/3906H01L43/12Y10T428/1121
    • A magnetoresistance effect element comprises: a magnetoresistance effect film, a pair of electrodes, and a phase separation layer. The magnetoresistance effect film includes a first ferromagnetic layer whose direction of magnetization is pinned substantially in one direction, a second ferromagnetic layer whose direction of magnetization changes in response to an external magnetic field, and an intermediate layer provided between the first and second ferromagnetic layers. The pair of electrodes are electrically coupled to the magnetoresistance effect film and configured to supply a sense current perpendicularly to a film plane of the magnetoresistance effect film. The phase separation layer is provided between the pair of electrodes. The phase separation layer has a first phase and a second phase formed by a phase separation in a solid phase from an alloy including a plurality of elements. One of the first and second phases includes at least one element selected from the group consisting of oxygen, nitrogen, fluorine and carbon in higher concentration than other of the first and second phases.
    • 磁阻效应元件包括:磁阻效应膜,一对电极和相分离层。 磁阻效应膜包括其磁化方向基本上被固定在一个方向上的第一铁磁层,其磁化方向响应于外部磁场而变化的第二铁磁性层和设置在第一和第二铁磁层之间的中间层。 一对电极电耦合到磁阻效应膜并且被配置为提供垂直于磁阻效应膜的膜平面的感测电流。 相分离层设置在该对电极之间。 相分离层具有通过从包含多个元素的合金固相中相分离而形成的第一相和第二相。 第一和第二相中的一个包括选自氧,氮,氟和碳中的至少一种元素,其浓度高于第一相和第二相中的其它相。