专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明申请

US20100319851A1 PLASMA REACTOR WITH FEED FORWARD THERMAL CONTROL SYSTEM USING A THERMAL MODEL FOR ACCOMMODATING RF POWER CHANGES OR WAFER TEMPERATURE CHANGES 有权
标题翻译：具有前馈热控制系统的等离子体反应器，使用热模型来适应RF功率变化或波形温度变化
公开(公告)号：US20100319851A1
公开(公告)日：2010-12-23
申请号：US12855674
申请日：2010-08-12
申请人： Douglas A. Buchberger, JR. , Paul Lukas Brillhart , Richard Fovell , Hamid Tavassoli , Douglas H. Burns , Kallol Bera , Daniel J. Hoffman
发明人： Douglas A. Buchberger, JR. , Paul Lukas Brillhart , Richard Fovell , Hamid Tavassoli , Douglas H. Burns , Kallol Bera , Daniel J. Hoffman
IPC分类号： C23F1/08 , H01L21/306
CPC分类号： H01L21/67248 , F25B49/02 , F25B2400/0401 , F25B2400/0403 , F25B2400/0411 , F25B2700/21174 , F25B2700/21175 , H01J37/32091 , H01J37/32183 , H01J37/32724 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L21/6831 , H05H2001/4682
摘要： A plasma reactor having a reactor chamber and an electrostatic chuck with a surface for holding a workpiece inside the chamber includes a backside gas pressure source coupled to the electrostatic chuck for applying a thermally conductive gas under a selected pressure into a workpiece-surface interface formed whenever a workpiece is held on the surface and an evaporator inside the electrostatic chuck and a refrigeration loop having an expansion valve for controlling flow of coolant through the evaporator. The reactor further includes a temperature sensor in the electrostatic chuck and a memory storing a schedule of changes in RF power or wafer temperature. The reactor further includes a thermal model capable of simulating heat transfer between the evaporator and the surface based upon measurements from the temperature sensor, and a control processor coupled to the thermal model and to the memory and governing the backside gas pressure source in response to a prediction from the model of a change in the selected pressure that would compensate for the next scheduled change in RF power or implement the next scheduled change in wafer temperature.
摘要翻译：具有反应室和具有用于将工件保持在室内的表面的静电卡盘的等离子体反应器包括耦合到静电卡盘的背侧气体压力源，用于在选定压力下将导热气体施加到每次形成的工件表面界面中工件被保持在表面上，蒸发器在静电卡盘内部，制冷回路具有用于控制通过蒸发器的冷却剂流动的膨胀阀。反应器还包括静电卡盘中的温度传感器和存储RF功率或晶片温度变化计划的存储器。反应器还包括热模型，其能够基于来自温度传感器的测量来模拟蒸发器和表面之间的热传递，以及耦合到热模型和存储器的控制处理器，并且响应于所述温度传感器控制背侧气体压力源从所选压力的变化的模型中预测将补偿下一次调频的功率变化或实现下一个预定的晶片温度的变化。

42. 发明申请

US20090179085A1 HEATED SHOWERHEAD ASSEMBLY 有权
标题翻译：加热淋浴组件
公开(公告)号：US20090179085A1
公开(公告)日：2009-07-16
申请号：US11972072
申请日：2008-01-10
申请人： JAMES D. CARDUCCI , Olga Regelman , Kallol Bera , Douglas A. Buchberger , Paul Brillhart
发明人： JAMES D. CARDUCCI , Olga Regelman , Kallol Bera , Douglas A. Buchberger , Paul Brillhart
IPC分类号： B05B1/24 , B05B1/14
CPC分类号： H01J37/3244 , B32B43/00 , C23C16/4412 , C23C16/45565 , C23C16/4557 , C23C16/45591 , H01J37/32449 , H01J37/32724 , H01J2237/3343 , Y10T29/49815
摘要： The present invention generally comprises a heated showerhead assembly that may be used to supply processing gases into a processing chamber. The processing chamber may be an etching chamber. When processing gas is evacuated from the processing chamber, the uniform processing of the substrate may be difficult. As the processing gas is pulled away from the substrate and towards the vacuum pump, the plasma, in the case of etching, may not be uniform across the substrate. Uneven plasma may lead to uneven etching. To prevent uneven etching, the showerhead assembly may be separated into two zones each having independently controllable gas introduction and temperature control. The first zone corresponds to the perimeter of the substrate while the second zone corresponds to the center of the substrate. By independently controlling the temperature and the gas flow through the showerhead zones, etching uniformity of the substrate may be increased.
摘要翻译：本发明通常包括可用于将处理气体供应到处理室中的加热喷头组件。处理室可以是蚀刻室。当处理气体从处理室排出时，衬底的均匀处理可能是困难的。当处理气体从衬底被拉离并且朝向真空泵时，在蚀刻的情况下，等离子体在衬底上可能不均匀。不均匀的等离子体可能导致不均匀的蚀刻。为了防止不均匀的蚀刻，喷头组件可以分成两个区域，每个区域具有独立可控的气体引入和温度控制。第一区域对应于衬底的周边，而第二区域对应于衬底的中心。通过独立地控制温度和通过喷头区域的气体流动，可以增加基板的蚀刻均匀性。

43. 发明申请

US20090159213A1 Plasma reactor gas distribution plate having a path splitting manifold immersed within a showerhead 审中-公开
标题翻译：等离子体反应器气体分配板，其具有浸入淋浴喷头内的路径分流歧管
公开(公告)号：US20090159213A1
公开(公告)日：2009-06-25
申请号：US12004472
申请日：2007-12-19
申请人： Kallol Bera , Shahid Rauf
发明人： Kallol Bera , Shahid Rauf
IPC分类号： C23F1/08
CPC分类号： H01J37/3244
摘要： A showerhead of a plasma reactor has an internal plenum comprising a showerhead floor and a plurality of gas injection holes through the floor of the showerhead. A path splitting manifold is immersed inside the plenum and comprises a gas supply inlet, plural gas outlets, and a plurality of channels comprising plural paths of equal lengths between the inlet and respective ones of the plural outlets.
摘要翻译：等离子体反应器的喷头具有内部增压室，其包括喷头底板和穿过喷头底部的多个气体注入孔。路径分流歧管浸入增压室内，包括气体供应入口，多个气体出口，以及多个通道，其包括多个入口与多个出口中相应长度的相同长度的通道。

44. 发明申请

US20090159002A1 Gas distribution plate with annular plenum having a sloped ceiling for uniform distribution 审中-公开
标题翻译：具有环形增压室的气体分配板，其具有用于均匀分布的倾斜天花板
公开(公告)号：US20090159002A1
公开(公告)日：2009-06-25
申请号：US12004448
申请日：2007-12-19
申请人： Kallol Bera , Shahid Rauf
发明人： Kallol Bera , Shahid Rauf
IPC分类号： C23C16/44 , B05B1/18
CPC分类号： C23C16/45585 , H01J37/3244
摘要： A gas distribution plate for a plasma reactor has an annular gas distribution plenum with an array of gas injection holes and a gas injection port at one end of the annular plenum, the plenum being progressively constricted in cross-sectional area along its azimuthal path by a sloping ceiling.
摘要翻译：用于等离子体反应器的气体分配板具有环形气体分配气室，其具有气体注入孔阵列和在环形增压室的一端处的气体注入口，所述增压室沿着其方位角路径的横截面积逐渐收缩，倾斜的天花板

45. 发明授权

US07540971B2 Plasma etch process using polymerizing etch gases across a wafer surface and additional polymer managing or controlling gases in independently fed gas zones with time and spatial modulation of gas content 有权
标题翻译：使用在晶片表面上聚合蚀刻气体的等离子体蚀刻工艺，以及在独立供气气体区域中管理或控制气体的另外的聚合物，其中气体含量随时间和空间调制
公开(公告)号：US07540971B2
公开(公告)日：2009-06-02
申请号：US11414015
申请日：2006-04-28
申请人： Kallol Bera , Xiaoye Zhao , Kenny L. Doan , Ezra Robert Gold , Paul Lukas Brillhart , Bruno Geoffrion , Bryan Pu , Daniel J. Hoffman
发明人： Kallol Bera , Xiaoye Zhao , Kenny L. Doan , Ezra Robert Gold , Paul Lukas Brillhart , Bruno Geoffrion , Bryan Pu , Daniel J. Hoffman
IPC分类号： H01L21/00 , C23F1/00
CPC分类号： H01L21/31116 , H01J37/321 , H01J37/32449 , H01J2237/3347
摘要： A plasma etch process etches high aspect ratio openings in a dielectric film on a workpiece in a reactor having a ceiling electrode overlying the workpiece and an electrostatic chuck supporting the workpiece. The process includes injecting a polymerizing etch process gas through an annular zone of gas injection orifices in the ceiling electrode, and evacuating gas from the reactor through a pumping annulus surrounding an edge of the workpiece. The high aspect ratio openings are etched in the dielectric film with etch species derived from the etch process gas while depositing a polymer derived from the etch process gas onto the workpiece, by generating a plasma in the reactor by applying VHF source power and/or HF and/or LF bias power to the electrodes at the ceiling and/or the electrostatic chuck. The process further includes slowing the deposition rate of the polymer, minimizing etch stop and/or increasing the etch rate in a region of the workpiece typically the center by injecting oxygen or nitrogen and/or high-fluorine containing gas through gas injection orifice in the corresponding region of the ceiling electrode, and adjusting the flow rate of the oxygen or nitrogen and/or high-fluorine containing gas through the gas injection orifice to minimize the difference between profiles and etch depths at the workpiece center and the workpiece periphery.
摘要翻译：等离子体蚀刻工艺在具有覆盖在工件上的天花板电极的反应器中的工件上的电介质膜中蚀刻高纵横比孔，以及支撑工件的静电卡盘。该方法包括将聚合蚀刻工艺气体注入天花板电极中的气体注入孔的环形区域，以及通过围绕工件边缘的泵送环从反应器排出气体。通过在蚀刻工艺气体中衍生出蚀刻物质，同时将从蚀刻工艺气体衍生的聚合物沉积到工件上，通过在反应器中产生等离子体，通过施加VHF源功率和/或HF来在电介质膜中蚀刻高纵横比开口和/或LF偏压电力到天花板和/或静电卡盘上的电极。该方法进一步包括减缓聚合物的沉积速率，通过在气体喷射孔中注入氧或氮和/或高含氟气体，在工件的区域中通常为中心使蚀刻停止和/或增加蚀刻速率最小化并且通过气体注入孔调节氧气或氮气和/或高含氟气体的流量，以最小化工件中心和工件外围处的轮廓和蚀刻深度之间的差异。

46. 发明授权

US07431859B2 Plasma etch process using polymerizing etch gases with different etch and polymer-deposition rates in different radial gas injection zones with time modulation 有权
标题翻译：在具有时间调制的不同径向气体注入区域中使用不同蚀刻和聚合物沉积速率的聚合蚀刻气体的等离子体蚀刻工艺
公开(公告)号：US07431859B2
公开(公告)日：2008-10-07
申请号：US11414017
申请日：2006-04-28
申请人： Kallol Bera , Xiaoye Zhao , Kenny L. Doan , Ezra Robert Gold , Paul Lukas Brillhart , Bruno Geoffrion , Bryan Pu , Daniel J. Hoffman
发明人： Kallol Bera , Xiaoye Zhao , Kenny L. Doan , Ezra Robert Gold , Paul Lukas Brillhart , Bruno Geoffrion , Bryan Pu , Daniel J. Hoffman
IPC分类号： H01L21/00 , C23F1/00
CPC分类号： H01L21/31116 , H01J37/321 , H01J37/32449
摘要： A plasma etch process includes injecting process gases with different compositions of chemical species through different radial gas injection zones of an overhead electrode to establish a desired distribution of chemical species among the plural gas injection zones.
摘要翻译：等离子体蚀刻工艺包括通过塔顶电极的不同径向气体注入区域注入具有不同组成的化学物质的工艺气体，以在多个气体注入区域之间建立所需的化学物质分布。

47. 发明申请

US20080179011A1 PLASMA REACTOR WITH WIDE PROCESS WINDOW EMPLOYING PLURAL VHF SOURCES 审中-公开
标题翻译：等离子体反应器，具有采用多个VHF源的宽过程窗口
公开(公告)号：US20080179011A1
公开(公告)日：2008-07-31
申请号：US11734040
申请日：2007-04-11
申请人： KENNETH S. COLLINS , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
发明人： KENNETH S. COLLINS , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： C23C16/45574 , C23C16/5096 , H01J37/32091 , H01J37/32165 , H01J37/32174 , H01L21/67069 , H01L21/6831
摘要： A plasma reactor includes an electrostatic chuck in the chamber for supporting the workpiece, a ceiling electrode facing the electrostatic chuck and an ESC electrode in the electrostatic chuck with an electrostatic clamping voltage supply coupled to the ESC electrode. The reactor further includes at least a first RF bias source of an LF or HF frequency coupled to the pedestal electrode, and first and second VHF power sources of different frequencies coupled to the same or to different ones of the electrodes. The first and second VHF power sources are of sufficiently high and sufficiently low frequencies, respectively, to produce center-high and center-low plasma distribution non-uniformities, respectively, in the chamber.
摘要翻译：等离子体反应器包括用于支撑工件的室中的静电卡盘，面向静电卡盘的天花板电极和静电卡盘中的ESC电极，其具有耦合到ESC电极的静电钳位电压源。反应器还包括耦合到基座电极的LF或HF频率的至少第一RF偏置源，以及耦合到相同或不同电极的不同频率的第一和第二VHF电源。第一和第二VHF电源分别具有足够高和足够低的频率，以分别在腔室中产生中心高和中心低等离子体分布不均匀性。

48. 发明申请

US20070251917A1 Plasma etch process using polymerizing etch gases across a wafer surface and additional polymer managing or controlling gases in independently fed gas zones with time and spatial modulation of gas content 有权
标题翻译：使用在晶片表面上聚合蚀刻气体的等离子体蚀刻工艺，以及在独立供气气体区域中管理或控制气体的另外的聚合物，其中气体含量随时间和空间调制
公开(公告)号：US20070251917A1
公开(公告)日：2007-11-01
申请号：US11414015
申请日：2006-04-28
申请人： Kallol Bera , Xiaoye Zhao , Kenny Doan , Ezra Gold , Paul Brillhart , Bruno Geoffrion , Bryan Pu , Daniel Hoffman
发明人： Kallol Bera , Xiaoye Zhao , Kenny Doan , Ezra Gold , Paul Brillhart , Bruno Geoffrion , Bryan Pu , Daniel Hoffman
IPC分类号： C03C25/68 , C23F1/00
CPC分类号： H01L21/31116 , H01J37/321 , H01J37/32449 , H01J2237/3347
摘要： A plasma etch process etches high aspect ratio openings in a dielectric film on a workpiece in a reactor having a ceiling electrode overlying the workpiece and an electrostatic chuck supporting the workpiece. The process includes injecting a polymerizing etch process gas through an annular zone of gas injection orifices in the ceiling electrode, and evacuating gas from the reactor through a pumping annulus surrounding an edge of the workpiece. The high aspect ratio openings are etched in the dielectric film with etch species derived from the etch process gas while depositing a polymer derived from the etch process gas onto the workpiece, by generating a plasma in the reactor by applying VHF source power and/or HF and/or LF bias power to the electrodes at the ceiling and/or the electrostatic chuck. The process further includes slowing the deposition rate of the polymer, minimizing etch stop and/or increasing the etch rate in a region of the workpiece typically the center by injecting oxygen or nitrogen and/or high-fluorine containing gas through gas injection orifice in the corresponding region of the ceiling electrode, and adjusting the flow rate of the oxygen or nitrogen and/or high-fluorine containing gas through the gas injection orifice to minimize the difference between profiles and etch depths at the workpiece center and the workpiece periphery.
摘要翻译：等离子体蚀刻工艺在具有覆盖在工件上的天花板电极的反应器中的工件上的电介质膜中蚀刻高纵横比孔，以及支撑工件的静电卡盘。该方法包括将聚合蚀刻工艺气体注入天花板电极中的气体注入孔的环形区域，以及通过围绕工件边缘的泵送环从反应器排出气体。通过在蚀刻工艺气体中衍生出蚀刻物质，同时将从蚀刻工艺气体衍生的聚合物沉积到工件上，通过在反应器中产生等离子体，通过施加VHF源功率和/或HF来在电介质膜中蚀刻高纵横比开口和/或LF偏压电力到天花板和/或静电卡盘上的电极。该方法进一步包括减缓聚合物的沉积速率，通过在气体喷射孔中注入氧或氮和/或高含氟气体，在工件的区域中通常为中心使蚀刻停止和/或增加蚀刻速率最小化并且通过气体注入孔调节氧气或氮气和/或高含氟气体的流量，以最小化工件中心和工件外围处的轮廓和蚀刻深度之间的差异。

49. 发明申请

US20070097580A1 Method of cooling a wafer support at a uniform temperature in a capacitively coupled plasma reactor 有权
标题翻译：在电容耦合等离子体反应器中以均匀的温度冷却晶片载体的方法
公开(公告)号：US20070097580A1
公开(公告)日：2007-05-03
申请号：US11410782
申请日：2006-04-24
申请人： Paul Brillhart , Richard Fovell , Douglas Buchberger , Douglas Burns , Kallol Bera , Daniel Hoffman
发明人： Paul Brillhart , Richard Fovell , Douglas Buchberger , Douglas Burns , Kallol Bera , Daniel Hoffman
IPC分类号： H02H5/04
CPC分类号： H01L21/67109
摘要： A method of transferring heat from or to a workpiece support in an RF coupled plasma reactor includes placing coolant in an internal flow channel that is located inside the workpiece support and transferring heat from or to the coolant by circulating the coolant through a refrigeration loop in which the internal flow channel of the workpiece support constitutes an evaporator of the refrigeration loop. The method further includes maintaining thermal conditions of the coolant inside the evaporator within a range in which heat exchange between the workpiece support and the coolant is primarily or exclusively through the latent heat of vaporization of the coolant.
摘要翻译：在RF耦合的等离子体反应器中将热量传递到工件支架的方法包括：将冷却剂放置在位于工件支架内部的内部流动通道中，并通过使冷却剂循环通过制冷循环来将热量传递或传递给冷却剂，工件支撑件的内部流动通道构成制冷回路的蒸发器。该方法还包括将蒸发器内部的冷却剂的热条件保持在工件支承件和冷却剂之间的热交换主要或仅通过冷却剂的潜热潜热的范围内。

50. 发明申请

US20180374684A1 PROCESSING TOOL WITH ELECTRICALLY SWITCHED ELECTRODE ASSEMBLY 审中-公开
公开(公告)号：US20180374684A1
公开(公告)日：2018-12-27
申请号：US16015074
申请日：2018-06-21
申请人： Kenneth S. Collins , Kartik Ramaswamy , Shahid Rauf , Kallol Bera , James D. Carducci , Michael R. Rice , Yue Guo
发明人： Kenneth S. Collins , Kartik Ramaswamy , Shahid Rauf , Kallol Bera , James D. Carducci , Michael R. Rice , Yue Guo
IPC分类号： H01J37/32 , H01L21/02 , C23C16/455
摘要： A plasma reactor includes a chamber body having an interior space that provides a plasma chamber, a gas distributor, a pump coupled to the plasma chamber, a workpiece support to hold a workpiece, an intra-chamber electrode assembly comprising a plurality of filaments extending laterally through the plasma chamber, each filament including a conductor surrounded by a cylindrical insulating shell, the plurality of filaments including a first multiplicity of filaments and a second multiplicity of filaments arranged in an alternating pattern with the first multiplicity of filaments, a first bus coupled to the first multiplicity of filaments and a second bus coupled to the second multiplicity of filaments, an RF power source to apply RF signal the intra-chamber electrode assembly, and at least one RF switch configured to controllably electrically couple and decouple the first bus from one of i) ground, ii) the RF power source, or iii) the second bus.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式