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41. 发明公开

EP0221531A3 High heat conductive insulated substrate and method of manufacturing the same 失效
标题翻译：高导热绝缘基板及其制造方法
公开(公告)号：EP0221531A3
公开(公告)日：1992-02-19
申请号：EP86115233.8
申请日：1986-11-04
申请人： KANEGAFUCHI KAGAKU KOGYO KABUSHIKI KAISHA
发明人： Yamamoto, Kenji , Nakayama, Takehisa , Tawada, Yoshihisa
IPC分类号： H01L21/48 , H01L23/14 , H01L23/36 , C23C16/50
CPC分类号： H01L23/147 , H01L21/4803 , H01L23/142 , H01L23/3732 , H01L2924/0002 , H05K1/053 , Y10T428/265 , Y10T428/30 , Y10T428/31678 , H01L2924/00
摘要： A high heat conductive insulated substrate comprising a substrate of which heat conductivity is not less than 50 W/mok, and a high heat conductive insulating layer coated on the substrate; and a method of producing a high heat conductive insulated substrate characterized in that an insulating layer is formed on a substrate by applying DC voltage and RF power to the substrate and providing magnetic field parallel to the surface of the substrate. The insulated substrate of the present invention has good heat conductivity, thermal resistance and smooth surface, whereby exfoliation of the film can be prevented.

42. 发明授权

EP0235785B1 Semiconductor device 失效
公开(公告)号：EP0235785B1
公开(公告)日：1991-10-23
申请号：EP87102929.4
申请日：1987-03-02
申请人： KANEGAFUCHI KAGAKU KOGYO KABUSHIKI KAISHA
发明人： Kobayashi, Kenji , Kondo, Masataka , Tsuge, Kazunori , Tawada, Yoshihisa
IPC分类号： H01L31/02 , H01L21/285
CPC分类号： H01L31/022425 , H01L31/03762 , H01L31/075 , Y02E10/548

43. 发明授权

EP0190710B1 Electric discharge machining electrode and method for producing the same 失效
标题翻译：电动放电加工电极及其制造方法
公开(公告)号：EP0190710B1
公开(公告)日：1990-05-02
申请号：EP86101393.6
申请日：1986-02-04
申请人： KANEGAFUCHI KAGAKU KOGYO KABUSHIKI KAISHA
发明人： Yamamoto, Kenji , Nakayama, Takehisa , Tawada, Yoshihisa
IPC分类号： B23H1/04 , B23H7/22 , B23H1/06
CPC分类号： B23H1/06

44. 发明公开

EP0309000A3 Amorphous semiconductor and amorphous silicon photovoltaic device 有权
标题翻译：非晶半导体和非晶硅光电器件
公开(公告)号：EP0309000A3
公开(公告)日：1989-05-31
申请号：EP88117644.0
申请日：1982-07-14
申请人： KANEGAFUCHI KAGAKU KOGYO KABUSHIKI KAISHA
发明人： Hamakawa, Yoshihiro , Tawada, Yoshihisa
IPC分类号： H01L31/02 , H01L31/06
CPC分类号： H01L31/202 , H01L31/022466 , H01L31/022475 , H01L31/0376 , H01L31/075 , H01L31/20 , Y02E10/548 , Y02P70/521 , Y10S420/903
摘要： An amorphous silicon conductor of the general formula: a-Si (1-x-y) C x N y containing hydrogen and/or fluorine, which provides an amorphous silicon PIN junction photovoltaic device having an improved conversion efficiency when it is used as a P-type or N-type semiconductor in the layer on the light impinging side of the PIN junction photovoltaic device. Also, the conversion efficiency of an amorphous silicon PIN junction photovoltaic device is improved by using a film of ITO and SnO₂ two layer structure as a transparent electrode for the photovoltaic device with the SnO₂ layer contacting the P or N layer, and the improvement is particularly marked in the heterojunction photovoltaic device.

45. 发明公开

EP0235785A3 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：EP0235785A3
公开(公告)日：1989-03-22
申请号：EP87102929.4
申请日：1987-03-02
申请人： KANEGAFUCHI KAGAKU KOGYO KABUSHIKI KAISHA
发明人： Kobayashi, Kenji , Kondo, Masataka , Tsuge, Kazunori , Tawada, Yoshihisa
IPC分类号： H01L31/02 , H01L21/285
CPC分类号： H01L31/022425 , H01L31/03762 , H01L31/075 , Y02E10/548
摘要： A semiconductor device comprising an amorphous semiconductor which might contain microcrystals and a metal electrode electrically connected to the amorphous semiconductor and containing Al as a first component wherein at least one element selected from the group consisting of (i)Ag, (ii)Au, (iii)Ca, Mg, Mn, W, Cr or Cu, (iv)Zn or Ge, and (v)Fe, Mo, Ni, Pd, Pt, Ti, V or Zr is added as an additional component of the metal electrode to the first component. According to the present invention, one can prevent the diffusion of an element of a metal electrode into a semiconductor layer during the production and the use of a semiconductor device. In this way, the degradation of the properties of the semiconductor device can be substantially prevented. Further, the yield of products can be improved and their lifetime greatly lengthened.

46. 发明公开

EP0193820A3 Method for forming a thin film pattern 失效
标题翻译：形成薄膜图案的方法
公开(公告)号：EP0193820A3
公开(公告)日：1988-01-07
申请号：EP86102335
申请日：1986-02-22
申请人： KANEGAFUCHI KAGAKU KOGYO KABUSHIKI KAISHA
发明人： Hiroe, Akihiko , Takamatsu, Osamu , Nakayama, Takehisa , Tawada, Yoshihisa , Tsuge, Kazunori
IPC分类号： H01L31/18 , H01L31/02 , H01L21/00
CPC分类号： H01L31/022425 , H01L21/0272 , H01L31/0224 , H01L31/046 , Y02E10/50
摘要： A method for forming a thin film pattern comprising the steps in sequence of forming a lift-off layer directly on a substrate wherein a pattern of the lift-off layer is reverse to a desired thin film pattern, forming a thin film on the substrate, removing an undesirable portion of the thin film together with the lift-off layer; and a method for producing a semiconductor device comprising the steps in sequence of forming a first electrode on an insulated substrate, removing a part of the first electrode, forming a semiconductor including amorphous material on the first electrode, forming a lift-off layer on the semiconductor including amorphous material at such a place whereon a second electrode is not desired to be formed, and forming a second electrode on the semiconductor. According to the present invention, a thin film pattern can be formed at low production cost, with high productivity and accuracy, and with less danger during the process.

47. 发明公开

EP0235785A2 Semiconductor device 失效
标题翻译：半导体设备。
公开(公告)号：EP0235785A2
公开(公告)日：1987-09-09
申请号：EP87102929.4
申请日：1987-03-02
申请人： KANEGAFUCHI KAGAKU KOGYO KABUSHIKI KAISHA
发明人： Kobayashi, Kenji , Kondo, Masataka , Tsuge, Kazunori , Tawada, Yoshihisa
IPC分类号： H01L31/02 , H01L21/285
CPC分类号： H01L31/022425 , H01L31/03762 , H01L31/075 , Y02E10/548
摘要： A semiconductor device comprising an amorphous semiconductor which might contain microcrystals and a metal electrode electrically connected to the amorphous semiconductor and containing Al as a first component wherein at least one element selected from the group consisting of (i)Ag, (ii)Au, (iii)Ca, Mg, Mn, W, Cr or Cu, (iv)Zn or Ge, and (v)Fe, Mo, Ni, Pd, Pt, Ti, V or Zr is added as an additional component of the metal electrode to the first component.
According to the present invention, one can prevent the diffusion of an element of a metal electrode into a semiconductor layer during the production and the use of a semiconductor device. In this way, the degradation of the properties of the semiconductor device can be substantially prevented. Further, the yield of products can be improved and their lifetime greatly lengthened.

48. 发明公开

EP0165570A3 Heat-resistant thin film photoelectric converter 有权
标题翻译：耐热薄膜光电转换器
公开(公告)号：EP0165570A3
公开(公告)日：1986-10-22
申请号：EP85107371
申请日：1985-06-14
申请人： KANEGAFUCHI KAGAKU KOGYO KABUSHIKI KAISHA
发明人： Takada, Jun , Yamaguchi, Minori , Tawada, Yoshihisa
IPC分类号： H01L31/02 , H01L31/18 , H01L31/06
CPC分类号： H01L31/022425 , H01L31/075 , Y02E10/548
摘要： A heat-resistant thin film photoelectric converter comprising a semiconductor, an electrode and a diffusion-blocking layer, the diffusion-blocking layer being provided between the semiconductor and at least one electrode, and its preparation. The converter can avoid the fall-down of the quality owing to the diffusion of metal or metalic compound from the electrode into the semiconductor.

49. 发明公开

EP0193820A2 Method for forming a thin film pattern 失效
标题翻译：赫尔斯特伦·赫尔斯特伦（Dénnschichtmusters）。
公开(公告)号：EP0193820A2
公开(公告)日：1986-09-10
申请号：EP86102335.6
申请日：1986-02-22
申请人： KANEGAFUCHI KAGAKU KOGYO KABUSHIKI KAISHA
发明人： Hiroe, Akihiko , Takamatsu, Osamu , Nakayama, Takehisa , Tawada, Yoshihisa , Tsuge, Kazunori
IPC分类号： H01L31/18 , H01L31/02 , H01L21/00
CPC分类号： H01L31/022425 , H01L21/0272 , H01L31/0224 , H01L31/046 , Y02E10/50
摘要： A method for forming a thin film pattern comprising the steps in sequence of forming a lift-off layer directly on a substrate wherein a pattern of the lift-off layer is reverse to a desired thin film pattern, forming a thin film on the substrate, removing an undesirable portion of the thin film together with the lift-off layer; and a method for producing a semiconductor device comprising the steps in sequence of forming a first electrode on an insulated substrate, removing a part of the first electrode, forming a semiconductor including amorphous material on the first electrode, forming a lift-off layer on the semiconductor including amorphous material at such a place whereon a second electrode is not desired to be formed, and forming a second electrode on the semiconductor.
According to the present invention, a thin film pattern can be formed at low production cost, with high productivity and accuracy, and with less danger during the process.
摘要翻译：一种用于形成薄膜图案的方法，包括以下步骤：直接在基板（1）上形成剥离层（2），其中剥离层的图案与期望的薄膜图案相反，形成薄膜（3），与剥离层（2）一起去除薄膜（3）的不希望的部分; 以及一种半导体器件（8）的制造方法，包括以下步骤：在绝缘基板（4）上形成第一电极（5），去除第一电极（5）的一部分，形成包含非晶材料的半导体 6）在第一电极（5）上，在半导体上形成第二电极（7）的半导体的半导体层上形成剥离层，所述半导体包括无定形材料，其中不希望形成第二电极。根据本发明，可以以低生产成本，高生产率和精确度地形成薄膜图案，并且在该过程中具有较小的危险。

50. 发明公开

EP0140130A2 Process and apparatus for preparing semiconductor layer 有权
标题翻译： Verfahren und Vorrichtung zur Herstellung einer Halbleiterschicht。
公开(公告)号：EP0140130A2
公开(公告)日：1985-05-08
申请号：EP84111152.9
申请日：1984-09-19
申请人： KANEGAFUCHI KAGAKU KOGYO KABUSHIKI KAISHA
发明人： Tawada, Yoshihisa , Okamoto, Takeo , Tsuge, Kazunori c/o Kanegafuchi Kagaku Kogyo K.K.
IPC分类号： H01L21/20 , H01L21/205
CPC分类号： H01J37/32082 , C23C16/517 , H01J37/32623 , H01J37/3266 , H01J2237/332 , H01L21/02422 , H01L21/02425 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： For preparing a semiconductor layer by means of high frequency glow discharge generated between a ground electrode (2) and a RF electrode (1) a DC potential difference between the electrodes is controlled at a voltage of not more than 10 V. The semiconductor layer formed on the RF electrode (1) side is satisfactory in electrical and electronical properties, and can be practically used.
摘要翻译：为了通过在接地电极（2）和RF电极（1）之间产生的高频辉光放电制备半导体层，电极之间的DC电位差被控制在不大于10V的电压。形成的半导体层在RF电极（1）侧的电气和电子性能是令人满意的，并且可以被实际使用。

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