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41. 发明授权

US07713761B2 Doping apparatus, doping method, and method for fabricating thin film transistor 失效
标题翻译：掺杂装置，掺杂方法和制造薄膜晶体管的方法
公开(公告)号：US07713761B2
公开(公告)日：2010-05-11
申请号：US11798980
申请日：2007-05-18
申请人： Junichi Koezuka , Naoto Yamade
发明人： Junichi Koezuka , Naoto Yamade
IPC分类号： G01R31/26 , H01L21/66
CPC分类号： H01L22/24 , H01L27/12 , H01L27/1285 , H01L27/1292 , Y10S438/914
摘要： It is an object of the present invention to provide a doping apparatus, a doping method, and a method for fabricating a thin film transistor that can carry out doping to the carrier concentration which is optimum for obtaining the desired electric characteristic non-destructively and in an easy manner. In accordance with the present invention, an electric characteristic of a semiconductor element (threshold voltage in a transistor and the like) is correctly and precisely monitored by using a contact angle, and is controlled by controlling a doping method. In addition, the present invention can be momentarily acquired information by in-situ monitoring the characteristic and can be fed back without a time lag.
摘要翻译：本发明的目的是提供一种掺杂装置，掺杂方法和制造薄膜晶体管的方法，所述薄膜晶体管可以对载流子浓度进行掺杂，这对于非破坏性地获得所需的电特性是最佳的一个简单的方式。根据本发明，通过使用接触角正确且精确地监测半导体元件的电特性（晶体管等中的阈值电压），并且通过控制掺杂方法来控制。此外，本发明可以通过原位监测特性而瞬间获取信息，并且可以在没有时间延迟的情况下反馈。

42. 发明申请

US20100087044A1 METHOD FOR MANUFACTURING SOI SUBSTRATE 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US20100087044A1
公开(公告)日：2010-04-08
申请号：US12567993
申请日：2009-09-28
申请人： Takeshi Shichi , Junichi Koezuka , Hideto Ohnuma , Shunpei Yamazaki
发明人： Takeshi Shichi , Junichi Koezuka , Hideto Ohnuma , Shunpei Yamazaki
IPC分类号： H01L21/762
CPC分类号： H01L27/1266 , H01L21/76254 , H01L27/1214 , H01L29/66772
摘要： The present invention provides a method for manufacturing an SOI substrate, to improve planarity of a surface of a single crystal semiconductor layer after separation by favorably separating a single crystal semiconductor substrate even in the case where a non-mass-separation type ion irradiation method is used, and to improve planarity of a surface of a single crystal semiconductor layer after separation as well as to improve throughput. The method includes the steps of irradiating a single crystal semiconductor substrate with accelerated ions by an ion doping method while the single crystal semiconductor substrate is cooled to form an embrittled region in the single crystal semiconductor substrate; bonding the single crystal semiconductor substrate and a base substrate with an insulating layer interposed therebetween; and separating the single crystal semiconductor substrate along the embrittled region to form a single crystal semiconductor layer over the base substrate with the insulating layer interposed therebetween.
摘要翻译：本发明提供一种制造SOI衬底的方法，即使在非质量分离型离子照射方法为非质子分离型离子照射方法的情况下，通过有利地分离单晶半导体衬底来提高分离后的单晶半导体层的表面的平面性并且在分离之后提高单晶半导体层的表面的平面性以及提高生产量。该方法包括以下步骤：当单晶半导体衬底被冷却以在单晶半导体衬底中形成脆化区域时，通过离子掺杂方法照射具有加速离子的单晶半导体衬底; 将单晶半导体衬底和基底衬底之间插入绝缘层; 并且沿着脆化区域分离单晶半导体衬底，以在基底衬底上形成绝缘层，形成单晶半导体层。

43. 发明授权

US07538011B2 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07538011B2
公开(公告)日：2009-05-26
申请号：US11882907
申请日：2007-08-07
申请人： Shunpei Yamazaki , Osama Nakamura , Masayuki Kajiwara , Junichi Koezuka , Koji Dairiki , Toru Mitsuki , Toru Takayama , Hideto Ohnuma , Taketomi Asami , Mitsuhiro Ichijo
发明人： Shunpei Yamazaki , Osama Nakamura , Masayuki Kajiwara , Junichi Koezuka , Koji Dairiki , Toru Mitsuki , Toru Takayama , Hideto Ohnuma , Taketomi Asami , Mitsuhiro Ichijo
IPC分类号： H01L21/322
CPC分类号： H01L29/66757 , G02F1/13454 , H01L27/12 , H01L27/1277 , H01L29/78621 , H01L29/78624 , H01L29/78675 , H01L29/78678
摘要： An object is to reduce the number of high temperature (equal to or greater than 600° C.) heat treatment process steps and achieve lower temperature (equal to or less than 600° C.) processes, and to simplify the process steps and increase throughput in a method of manufacturing a semiconductor device. With the present invention, a barrier layer, a second semiconductor film, and a third semiconductor film containing a noble (rare) gas element are formed on a first semiconductor film having a crystalline structure. Gettering is performed and a metallic element contained in the first semiconductor film passes through the barrier layer and the second semiconductor film by a heat treatment process, and moves to the third semiconductor film. The second semiconductor film and the third semiconductor film are then removed, with the barrier layer used as an etching stopper.
摘要翻译：目的是减少高温（等于或高于600℃）的热处理工艺步骤，达到较低的温度（等于或小于600℃）的工艺，并简化工艺步骤并增加在制造半导体器件的方法中的吞吐量。通过本发明，在具有结晶结构的第一半导体膜上形成有阻挡层，第二半导体膜和含有贵重（稀有）气体元素的第三半导体膜。进行吸气，并且包含在第一半导体膜中的金属元素通过热处理工艺通过阻挡层和第二半导体膜，并移动到第三半导体膜。然后去除第二半导体膜和第三半导体膜，其中阻挡层用作蚀刻停止层。

44. 发明授权

US07250312B2 Doping method and method for fabricating thin film transistor 有权
标题翻译：用于制造薄膜晶体管的掺杂方法和方法
公开(公告)号：US07250312B2
公开(公告)日：2007-07-31
申请号：US10910623
申请日：2004-08-04
申请人： Junichi Koezuka , Naoto Yamade
发明人： Junichi Koezuka , Naoto Yamade
IPC分类号： H01L21/66 , G01R31/26
CPC分类号： H01L22/24 , H01L27/12 , H01L27/1285 , H01L27/1292 , Y10S438/914
摘要： It is an object of the present invention to provide a doping apparatus, a doping method, and a method for fabricating a thin film transistor that can carry out doping to the carrier concentration which is optimum for obtaining the desired electric characteristic non-destructively and in an easy manner. In accordance with the present invention, an electric characteristic of a semiconductor element (threshold voltage in a transistor and the like) is correctly and precisely monitored by using a contact angle, and is controlled by controlling a doping method. In addition, the present invention can be momentarily acquired information by in-situ monitoring the characteristic and can be fed back without a time lag.
摘要翻译：本发明的目的是提供一种掺杂装置，掺杂方法和制造薄膜晶体管的方法，所述薄膜晶体管可以对载流子浓度进行掺杂，这对于非破坏性地获得所需的电特性是最佳的一个简单的方式。根据本发明，通过使用接触角正确且精确地监测半导体元件的电特性（晶体管等中的阈值电压），并且通过控制掺杂方法来控制。此外，本发明可以通过原位监测特性而瞬间获取信息，并且可以在没有时间延迟的情况下反馈。

45. 发明申请

US20070023700A1 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20070023700A1
公开(公告)日：2007-02-01
申请号：US11474499
申请日：2006-06-26
申请人： Junichi Koezuka , Hiroshi Ohki , Taku Hasegawa , Mami Goto
发明人： Junichi Koezuka , Hiroshi Ohki , Taku Hasegawa , Mami Goto
IPC分类号： H01J37/08
CPC分类号： H01J37/3171 , H01J27/024 , H01J37/302 , H01J37/32357 , H01J37/32412 , H01J37/3266 , H01J2237/006 , H01J2237/08 , H01L21/2236 , H01L27/1214 , H01L27/127 , H01L29/66757 , H01L29/78621
摘要： Doping with suppressed filament deterioration can be performed even in the case of doping in various conditions with an ion doping apparatus having a filament. After ion doping is completed, supply of a material gas is stopped and hydrogen or a rare gas is kept to be supplied. After that, current of the filament is decreased and correspondingly, filament temperature is decreased. Accordingly, in decreasing the filament temperature, the material gas around the filament has been replaced with hydrogen or a rare gas.
摘要翻译：即使在具有灯丝的离子掺杂装置的各种条件下进行掺杂的情况下，也可以进行具有抑制的丝状劣化的掺杂。离子掺杂完成后，停止供给原料气体，并保持供给氢气或稀有气体。之后，灯丝的电流降低，灯丝温度降低。因此，在降低灯丝温度时，灯丝周围的原料气体被氢气或稀有气体置换。

46. 发明申请

US20060177996A1 Doping method and method of manufacturing field effect transistor 有权
标题翻译：掺杂方法和制造场效应晶体管的方法
公开(公告)号：US20060177996A1
公开(公告)日：2006-08-10
申请号：US11346378
申请日：2006-02-03
申请人： Junichi Koezuka , Naoki Suzuki
发明人： Junichi Koezuka , Naoki Suzuki
IPC分类号： H01L21/26 , H01L21/42
CPC分类号： H01L29/78621 , H01L21/26513 , H01L29/66757
摘要： A doping method comprising the steps of; obtaining a proportion X of ions of a compound including a donor or an acceptor impurity in total ions from mass spectrum by using a first source gas of a first concentration; analyzing a peak concentration Y of the compound in a first processing object which is doped by using a second source gas of a second concentration equal to or lower than the first concentration, referring to a dose amount of total ions as Do and setting an acceleration voltage at a value, obtaining a dose amount D1 of total ions from a expression, Y=(D1/D0)(aX+b), and doping a second processing object with the donor or the acceptor impurity by a ion doping apparatus using a third source gas, wherein a dose amount of total ions is set at D1, and an acceleration voltage is set at the value.
摘要翻译：一种掺杂方法，包括以下步骤：通过使用第一浓度的第一源气体从质谱获得包含供体或受体杂质的化合物的离子的比例X; 分析通过使用等于或低于第一浓度的第二浓度的第二源气体掺杂的第一处理对象中的化合物的峰浓度Y，参考总离子的剂量为Do并设定加速电压从表达式获得总离子的剂量D D 1，其中Y =（D 1 / D O 0）（aX + b），并且通过使用第三源气体的离子掺杂装置用施主或受体杂质掺杂第二处理对象，其中总离子的剂量量设定为D 1，加速度电压设定在该值。

47. 发明授权

US09260779B2 Light-transmitting conductive film, display device, electronic device, and manufacturing method of light-transmitting conductive film 有权
标题翻译：透光导电膜，显示装置，电子装置以及透光性导电膜的制造方法
公开(公告)号：US09260779B2
公开(公告)日：2016-02-16
申请号：US12781894
申请日：2010-05-18
申请人： Junichi Koezuka , Tetsunori Maruyama , Takayuki Saito , Yuki Imoto , Noriaki Uto , Yuta Endo , Hitomi Shionoya , Takuya Hirohashi , Shunpei Yamazaki
发明人： Junichi Koezuka , Tetsunori Maruyama , Takayuki Saito , Yuki Imoto , Noriaki Uto , Yuta Endo , Hitomi Shionoya , Takuya Hirohashi , Shunpei Yamazaki
IPC分类号： C23C14/08 , C23C14/34 , C23C14/06 , C23C14/58 , C23C14/54
CPC分类号： H01B1/02 , C23C14/0676 , C23C14/3414 , C23C14/541 , C23C14/5806
摘要： An object is to provide a transparent conductive film having favorable transparency and conductivity at low cost. Another object is to reduce the resistivity of a transparent conductive film formed using conductive oxynitride including zinc and aluminum. Another object is to provide a transparent conductive film that is formed using conductive oxynitride including zinc and aluminum. When aluminum and nitrogen are made to be included in a transparent conductive film formed using oxide including zinc to form a transparent conductive film that is formed using conductive oxynitride including zinc and aluminum, the transparent conductive film can have reduced resistivity. Heat treatment after the formation of the transparent conductive film that is formed using conductive oxynitride including zinc and aluminum enables reduction in resistivity of the transparent conductive film.
摘要翻译：本发明的目的是提供一种透明导电膜，其具有良好的透明性和低导电性。另一个目的是降低使用包括锌和铝的导电氮氧化物形成的透明导电膜的电阻率。另一个目的是提供使用包括锌和铝的导电氮氧化物形成的透明导电膜。当使用包含锌的氧化物形成的透明导电膜中包含铝和氮以形成使用包括锌和铝的导电氮氧化物形成的透明导电膜时，透明导电膜可以具有降低的电阻率。在形成使用包括锌和铝的导电氮氧化物形成的透明导电膜之后的热处理使得能够降低透明导电膜的电阻率。

48. 发明授权

US08709922B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US08709922B2
公开(公告)日：2014-04-29
申请号：US13448611
申请日：2012-04-17
申请人： Junichi Koezuka , Naoto Yamade , Kyoko Yoshioka , Yuhei Sato , Mari Terashima
发明人： Junichi Koezuka , Naoto Yamade , Kyoko Yoshioka , Yuhei Sato , Mari Terashima
IPC分类号： H01L29/786 , H01L29/66
CPC分类号： H01L29/66969 , H01L21/02667 , H01L29/78606 , H01L29/78693
摘要： A highly reliable semiconductor device which is formed using an oxide semiconductor and has stable electric characteristics is provided. A semiconductor device which includes an amorphous oxide semiconductor layer including a region containing oxygen in a proportion higher than that in the stoichiometric composition, and an aluminum oxide film provided over the amorphous oxide semiconductor layer is provided. The amorphous oxide semiconductor layer is formed as follows: oxygen implantation treatment is performed on a crystalline or amorphous oxide semiconductor layer which has been subjected to dehydration or dehydrogenation treatment, and then thermal treatment is performed on the oxide semiconductor layer provided with an aluminum oxide film at a temperature lower than or equal to 450° C.
摘要翻译：提供了使用氧化物半导体形成且具有稳定的电特性的高度可靠的半导体器件。提供一种半导体器件，其包括非晶氧化物半导体层，所述非晶氧化物半导体层包括含有比所述化学计量组成中高的比例的氧的区域和设置在所述非晶氧化物半导体层上的氧化铝膜。无定形氧化物半导体层如下形成：对已进行脱水或脱氢处理的结晶或非晶氧化物半导体层进行氧注入处理，然后对设置有氧化铝膜的氧化物半导体层进行热处理在低于或等于450℃的温度下

49. 发明授权

US08551824B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08551824B2
公开(公告)日：2013-10-08
申请号：US13029148
申请日：2011-02-17
申请人： Shunpei Yamazaki , Junichi Koezuka
发明人： Shunpei Yamazaki , Junichi Koezuka
IPC分类号： H01L21/84 , H01L21/00 , H01L21/331 , H01L21/322
CPC分类号： H01L21/385 , G02F1/134309 , G02F1/13439 , G02F1/1368 , G02F2201/123 , H01L27/1225 , H01L27/124 , H01L29/4908 , H01L29/4958 , H01L29/513 , H01L29/518 , H01L29/66969 , H01L29/7869 , H01L29/78696
摘要： In a transistor including an oxide semiconductor layer, an oxide insulating layer is formed so as to be in contact with the oxide semiconductor layer. Then, oxygen is introduced (added) to the oxide semiconductor layer through the oxide insulating layer, and heat treatment is performed. Through these steps of oxygen introduction and heat treatment, impurities such as hydrogen, moisture, a hydroxyl group, or hydride are intentionally removed from the oxide semiconductor layer, so that the oxide semiconductor layer is highly purified.
摘要翻译：在包括氧化物半导体层的晶体管中，形成与氧化物半导体层接触的氧化物绝缘层。然后，通过氧化物绝缘层将氧引入（添加）到氧化物半导体层，并进行热处理。通过氧气引入和热处理的这些步骤，有意地从氧化物半导体层除去诸如氢，水分，羟基或氢化物的杂质，使得氧化物半导体层被高度纯化。

50. 发明授权

US08445338B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08445338B2
公开(公告)日：2013-05-21
申请号：US13549540
申请日：2012-07-16
申请人： Keiichi Sekiguchi , Junichi Koezuka , Yasuyuki Arai , Shunpei Yamazaki
发明人： Keiichi Sekiguchi , Junichi Koezuka , Yasuyuki Arai , Shunpei Yamazaki
IPC分类号： H01L21/84
CPC分类号： H01L27/1214 , H01L27/1203 , H01L27/127 , H01L29/78624 , H01L29/78645 , H01L29/78675 , H01L29/78696 , H01L2224/05001 , H01L2224/05008 , H01L2224/05024 , H01L2224/05548 , H01L2224/05569 , H01L2224/05572 , H01L2224/16225 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014 , H01L2224/05599 , H01L2224/05099
摘要： The present invention provides a method for manufacturing a semiconductor device, by which a transistor including an active layer, a gate insulating film in contact with the active layer, and a gate electrode overlapping the active layer with the gate insulating film therebetween is provided; an impurity is added to a part of a first region overlapped with the gate electrode with the gate insulating film therebetween in the active layer and a second region but the first region in the active layer by adding the impurity to the active layer from one oblique direction; and the second region is situated in the one direction relative to the first region.
摘要翻译：本发明提供了一种制造半导体器件的方法，通过该方法，提供了包括有源层，与有源层接触的栅极绝缘膜和与有源层重叠的栅极与其间的栅极绝缘膜的晶体管。在有源层和第二区域之间，与栅电极重叠的第一区域的一部分添加杂质，而通过从有源层向一个倾斜方向添加杂质，而在有源层中添加杂质 ; 并且第二区域相对于第一区域位于一个方向上。

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