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41. 发明授权

US07803657B2 Method of manufacturing a variable resistance structure and method of manufacturing a phase-change memory device using the same 有权
标题翻译：制造可变电阻结构的方法以及使用其制造相变存储器件的方法
公开(公告)号：US07803657B2
公开(公告)日：2010-09-28
申请号：US12654714
申请日：2009-12-30
申请人： Suk-Hun Choi , Chang-Ki Hong , Yoon-Ho Son , Jang-Eun Heo
发明人： Suk-Hun Choi , Chang-Ki Hong , Yoon-Ho Son , Jang-Eun Heo
IPC分类号： H01L21/44 , H01L29/08 , H01L29/18
CPC分类号： H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/1253 , H01L45/143 , H01L45/144 , H01L45/1675 , H01L45/1683
摘要： In methods of manufacturing a variable resistance structure and a phase-change memory device, after forming a first insulation layer on a substrate having a contact region, a contact hole exposing the contact region is formed through the first insulation layer. After forming a first conductive layer on the first insulation layer to fill up the contact hole, a first protection layer pattern is formed on the first conductive layer. The first conductive layer is partially etched to form a contact and to form a pad on the contact. A second protection layer is formed on the first protection layer pattern, and then an opening exposing the pad is formed through the second protection layer and the first protection layer pattern. After formation of a first electrode, a phase-change material layer pattern and a second electrode are formed on the first electrode and the second protection layer.
摘要翻译：在制造可变电阻结构和相变存储器件的方法中，在具有接触区域的基板上形成第一绝缘层之后，通过第一绝缘层形成暴露接触区域的接触孔。在第一绝缘层上形成第一导电层以填充接触孔之后，在第一导电层上形成第一保护层图案。部分地蚀刻第一导电层以形成接触并在接触件上形成焊盘。在第一保护层图案上形成第二保护层，然后通过第二保护层和第一保护层图案形成露出焊盘的开口。在形成第一电极之后，在第一电极和第二保护层上形成相变材料层图案和第二电极。

42. 发明申请

US20100203725A1 Methods of fabricating semiconductor devices and semiconductor devices including a contact plug processed by rapid thermal annealing 有权
标题翻译：制造半导体器件和包括通过快速热退火处理的接触插塞的半导体器件的方法
公开(公告)号：US20100203725A1
公开(公告)日：2010-08-12
申请号：US12656673
申请日：2010-02-12
申请人： Suk-Hun Choi , Chang-Ki Hong , Jae-Hyoung Choi , Yoon-Ho Son , Min-Young Park , Yong-Suk Tak
发明人： Suk-Hun Choi , Chang-Ki Hong , Jae-Hyoung Choi , Yoon-Ho Son , Min-Young Park , Yong-Suk Tak
IPC分类号： H01L21/768
CPC分类号： H01L21/76877 , H01L21/321 , H01L21/3212 , H01L21/7684 , H01L21/76883
摘要： A method of fabricating a semiconductor device includes depositing tungsten on an insulating layer in which a contact hole is formed by chemical vapor deposition (CVD), performing chemical mechanical planarization (CMP) on the tungsten to expose the insulating layer and form a tungsten contact plug, and performing rapid thermal oxidation (RTO) on the tungsten contact plug in an oxygen atmosphere such that the tungsten expands volumetrically into tungsten oxide (WξOψ).
摘要翻译：制造半导体器件的方法包括在绝缘层上沉积钨，其中通过化学气相沉积（CVD）形成接触孔，在钨上进行化学机械平面化（CMP）以暴露绝缘层并形成钨接触插塞，并且在氧气氛中对钨接触塞进行快速热氧化（RTO），使得钨以体积方式膨胀成氧化钨（W＆Xgr;Oψ）。

43. 发明申请

US20100112752A1 Method of manufacturing a variable resistance structure and method of manufacturing a phase-change memory device using the same 有权
公开(公告)号：US20100112752A1
公开(公告)日：2010-05-06
申请号：US12654714
申请日：2009-12-30
申请人： Suk-Hun Choi , Chang-Ki Hong , Yoon-Ho Son , Jang-Eun Heo
发明人： Suk-Hun Choi , Chang-Ki Hong , Yoon-Ho Son , Jang-Eun Heo
IPC分类号： H01L21/06
CPC分类号： H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/1253 , H01L45/143 , H01L45/144 , H01L45/1675 , H01L45/1683
摘要： In methods of manufacturing a variable resistance structure and a phase-change memory device, after forming a first insulation layer on a substrate having a contact region, a contact hole exposing the contact region is formed through the first insulation layer. After forming a first conductive layer on the first insulation layer to fill up the contact hole, a first protection layer pattern is formed on the first conductive layer. The first conductive layer is partially etched to form a contact and to form a pad on the contact. A second protection layer is formed on the first protection layer pattern, and then an opening exposing the pad is formed through the second protection layer and the first protection layer pattern. After formation of a first electrode, a phase-change material layer pattern and a second electrode are formed on the first electrode and the second protection layer.

44. 发明申请

US20060037942A1 Slurry, chemical mechanical polishing method using the slurry, and method of forming a surface of a capacitor using the slurry 审中-公开
标题翻译：使用浆料的浆料，化学机械抛光方法，以及使用该浆料形成电容器表面的方法
公开(公告)号：US20060037942A1
公开(公告)日：2006-02-23
申请号：US11170061
申请日：2005-06-30
申请人： Seong-Kyu Yun , Kenichi Orui , Chang-Ki Hong , Jae-Dong Lee , Sung-Jun Kim , Haruki Nojo
发明人： Seong-Kyu Yun , Kenichi Orui , Chang-Ki Hong , Jae-Dong Lee , Sung-Jun Kim , Haruki Nojo
IPC分类号： C09K13/00 , C03C15/00 , H01L21/302
CPC分类号： C03C19/00 , C03C2218/328 , C09G1/02 , C09K3/1463 , H01L21/31053 , H01L21/3212
摘要： A slurry, chemical mechanical polishing (CMP) method using the slurry, and method of forming a surface of a capacitor using the slurry. The slurry may include an abrasive, an oxidizer, and at least one pH controller to control a pH of the slurry.
摘要翻译：使用浆料的浆料，化学机械抛光（CMP）方法以及使用该浆料形成电容器表面的方法。浆料可以包括研磨剂，氧化剂和至少一种pH控制剂以控制浆料的pH。

45. 发明授权

US08092698B2 Methods of forming semiconductor devices formed by processes including the use of specific etchant solutions 有权
标题翻译：通过包括使用特定蚀刻剂溶液的工艺形成半导体器件的方法
公开(公告)号：US08092698B2
公开(公告)日：2012-01-10
申请号：US12199928
申请日：2008-08-28
申请人： Yu-Kyung Kim , Chang-Ki Hong , Sang-Jun Choi , Jeong-Nam Han
发明人： Yu-Kyung Kim , Chang-Ki Hong , Sang-Jun Choi , Jeong-Nam Han
IPC分类号： B44C1/22
CPC分类号： C23F1/28 , B82Y25/00 , B82Y40/00 , C23F1/16 , C23F1/26 , C23F1/44 , H01F41/308 , H01F41/34 , H01L21/32134 , H01L43/12
摘要： The present invention provides etchant solutions including deionized water and an organic acid having a carboxyl radical and a hydroxyl radical. Methods of forming magnetic memory devices are also disclosed.
摘要翻译：本发明提供了包括去离子水和具有羧基和羟基自由基的有机酸的蚀刻剂溶液。还公开了形成磁存储器件的方法。

46. 发明授权

US07985999B2 Semiconductor device having capacitor 失效
标题翻译：具有电容器的半导体器件
公开(公告)号：US07985999B2
公开(公告)日：2011-07-26
申请号：US12659724
申请日：2010-03-18
申请人： Jung-Min Oh , Jeong-Nam Han , Chang-Ki Hong , Woo-Gwan Shim , Im-Soo Park
发明人： Jung-Min Oh , Jeong-Nam Han , Chang-Ki Hong , Woo-Gwan Shim , Im-Soo Park
IPC分类号： H01L27/108
CPC分类号： H01L28/91 , H01L21/31116 , H01L27/10817 , H01L27/10852
摘要： A semiconductor device having a capacitor and a method of fabricating the same may be provided. A method of fabricating a semiconductor device may include forming an etch stop layer and a mold layer sequentially on a substrate, patterning the mold layer to form a mold electrode hole exposing a portion of the etch stop layer, etching selectively the exposed etch stop layer by an isotropic dry etching process to form a contact electrode hole through the etch stop layer to expose a portion of the substrate, forming a conductive layer on the substrate and removing the conductive layer on the mold layer on the mold layer to form a cylindrical bottom electrode in the mold and contact electrode holes. The isotropic dry etching process may utilize a process gas including main etching gas and selectivity adjusting gas. The selectivity adjusting gas may increase an etch rate of the etch stop layer by more than an etch rate of the mold layer by the isotropic wet etching process.
摘要翻译：可以提供具有电容器的半导体器件及其制造方法。制造半导体器件的方法可以包括在衬底上顺序地形成蚀刻停止层和模制层，图案化模具层以形成露出蚀刻停止层的一部分的模具电极孔，通过以下步骤选择性地蚀刻暴露的蚀刻停止层：各向同性干蚀刻工艺，以形成通过蚀刻停止层的接触电极孔，以露出衬底的一部分，在衬底上形成导电层，并去除模层上的模层上的导电层，形成圆柱形底电极在模具和接触电极孔中。各向同性干蚀刻工艺可以利用包括主蚀刻气体和选择性调节气体的工艺气体。选择性调节气体可以通过各向同性湿蚀刻工艺增加蚀刻停止层的蚀刻速率超过模具层的蚀刻速率。

47. 发明授权

US07820508B2 Semiconductor device having capacitor and method of fabricating the same 有权
公开(公告)号：US07820508B2
公开(公告)日：2010-10-26
申请号：US11593067
申请日：2006-11-06
申请人： Jung-Min Oh , Jeong-Nam Han , Chang-Ki Hong , Woo-Gwan Shim , Im-Soo Park
发明人： Jung-Min Oh , Jeong-Nam Han , Chang-Ki Hong , Woo-Gwan Shim , Im-Soo Park
IPC分类号： H01L21/8242
CPC分类号： H01L28/91 , H01L21/31116 , H01L27/10817 , H01L27/10852
摘要： A semiconductor device having a capacitor and a method of fabricating the same may be provided. A method of fabricating a semiconductor device may include forming an etch stop layer and a mold layer sequentially on a substrate, patterning the mold layer to form a mold electrode hole exposing a portion of the etch stop layer, etching selectively the exposed etch stop layer by an isotropic dry etching process to form a contact electrode hole through the etch stop layer to expose a portion of the substrate, forming a conductive layer on the substrate and removing the conductive layer on the mold layer on the mold layer to form a cylindrical bottom electrode in the mold and contact electrode holes. The isotropic dry etching process may utilize a process gas including main etching gas and selectivity adjusting gas. The selectivity adjusting gas may increase an etch rate of the etch stop layer by more than an etch rate of the mold layer by the isotropic wet etching process.

48. 发明申请

US20090025755A1 Method for treating substrate 审中-公开
标题翻译：底物处理方法
公开(公告)号：US20090025755A1
公开(公告)日：2009-01-29
申请号：US12219562
申请日：2008-07-24
申请人： Dae-Hong Eom , Chang-Ki Hong , Woo-Gwan Shim , Young-Ok Kim
发明人： Dae-Hong Eom , Chang-Ki Hong , Woo-Gwan Shim , Young-Ok Kim
IPC分类号： B08B3/10
CPC分类号： B08B3/04 , B08B3/10 , H01L21/67034 , H01L21/67051
摘要： Example embodiments relate to a method of treating a substrate after performing a cleaning step with a liquid chemical in a single substrate spin cleaner. A method of treating a substrate according to example embodiments may include forming a film of deionized water on a surface of the substrate during rinsing, and drying the substrate by supplying a drying gas to the water film on the surface of the substrate. When rinsing the substrate, the rotating speed of the substrate may be reduced to about 50 rpm or less to form a film of water on the surface of the substrate. The film of water may shield the surface of the substrate from direct exposure to atmospheric air. The film of water may be maintained on the surface of the substrate when commencing the supply of the drying gas. Consequently, the number of water marks on the dried substrate may be reduced or prevented.
摘要翻译：示例性实施方案涉及在单个底物旋转清洁剂中用液体化学品进行清洁步骤之后处理基材的方法。根据示例性实施方案的处理基材的方法可以包括在漂洗期间在基材的表面上形成去离子水膜，并通过向基材表面上的水膜供应干燥气体来干燥基材。当冲洗基板时，基板的旋转速度可以降低到约50rpm或更小，以在基板的表面上形成水膜。水膜可以屏蔽衬底表面直接暴露于大气中。当开始供应干燥气体时，水膜可以保持在基板的表面上。因此，可以减少或防止干燥的基板上的水痕的数量。

49. 发明申请

US20080314868A1 METHODS OF FORMING SEMICONDUCTOR DEVICES FORMED BY PROCESSES INCLUDING THE USE OF SPECIFIC ETCHANT SOLUTIONS 有权
标题翻译：形成由包括使用特定溶剂解决方案的方法形成的半导体器件的方法
公开(公告)号：US20080314868A1
公开(公告)日：2008-12-25
申请号：US12199928
申请日：2008-08-28
申请人： Yu-Kyung Kim , Chang-Ki Hong , Sang-Jun Choi , Jeong-Nam Han
发明人： Yu-Kyung Kim , Chang-Ki Hong , Sang-Jun Choi , Jeong-Nam Han
IPC分类号： C23F1/00
CPC分类号： C23F1/28 , B82Y25/00 , B82Y40/00 , C23F1/16 , C23F1/26 , C23F1/44 , H01F41/308 , H01F41/34 , H01L21/32134 , H01L43/12
摘要： The present invention provides etchant solutions including deionized water and an organic acid having a carboxyl radical and a hydroxyl radical. Methods of forming magnetic memory devices are also disclosed.
摘要翻译：本发明提供了包括去离子水和具有羧基和羟基自由基的有机酸的蚀刻剂溶液。还公开了形成磁存储器件的方法。

50. 发明授权

US07314578B2 Slurry compositions and CMP methods using the same 失效
标题翻译：浆料组合物和使用其的CMP方法
公开(公告)号：US07314578B2
公开(公告)日：2008-01-01
申请号：US10807139
申请日：2004-03-24
申请人： Jaekwang Choi , Jaedong Lee , Chang-Ki Hong
发明人： Jaekwang Choi , Jaedong Lee , Chang-Ki Hong
IPC分类号： C09K5/00
CPC分类号： C09G1/02 , C09K3/1463 , H01L21/3212 , H01L21/7684
摘要： The exemplary embodiments of the present invention providing new slurry compositions suitable for use in processes involving the chemical mechanical polishing (CMP) of a polysilicon layer. The slurry compositions include one or more non-ionic polymeric surfactants that will selectively form a passivation layer on an exposed polysilicon surface in order to suppress the polysilicon removal rate relative to silicon oxide and silicon nitride and improve the planarity of the polished substrate. Exemplary surfactants include alkyl and aryl alcohols of ethylene oxide (EO) and propylene oxide (PO) block copolymers and may be present in the slurry compositions in an amount of up to about 5 wt %, although much smaller concentrations may be effective. Other slurry additives may include viscosity modifiers, pH modifiers, dispersion agents, chelating agents, and amine or imine surfactants suitable for modifying the relative removal rates of silicon nitride and silicon oxide.
摘要翻译：提供适用于涉及多晶硅层的化学机械抛光（CMP）的工艺的新的浆料组合物的本发明的示例性实施方案。浆料组合物包括一种或多种非离子聚合物表面活性剂，其将在暴露的多晶硅表面上选择性地形成钝化层，以便抑制相对于氧化硅和氮化硅的多晶硅去除速率并提高抛光的基材的平面度。示例性的表面活性剂包括环氧乙烷（EO）和环氧丙烷（PO）嵌段共聚物的烷基和芳基醇，并且可以以高达约5重量％的量存在于浆料组合物中，尽管更小的浓度可能是有效的。其它浆料添加剂可以包括粘度调节剂，pH调节剂，分散剂，螯合剂和适于改变氮化硅和氧化硅的相对去除速率的胺或亚胺表面活性剂。

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