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41. 发明授权

US08994139B2 Lateral overflow drain and channel stop regions in image sensors 有权
标题翻译：图像传感器中的横向溢出漏极和通道停止区域
公开(公告)号：US08994139B2
公开(公告)日：2015-03-31
申请号：US13415021
申请日：2012-03-08
申请人： Edmund K. Banghart , Eric G. Stevens , Hung Q. Doan
发明人： Edmund K. Banghart , Eric G. Stevens , Hung Q. Doan
IPC分类号： H01L27/146 , H01L27/148
CPC分类号： H01L27/14887 , H01L27/14656 , H01L27/14674 , H01L27/14683 , H01L27/1485
摘要： A lateral overflow drain and a channel stop are fabricated using a double mask process. Each lateral overflow drain is formed within a respective channel stop. Due to the use of two mask layers, one edge of each lateral overflow drain is aligned, or substantially aligned, with an edge of a respective channel stop.
摘要翻译：使用双掩模工艺制造横向溢流漏斗和通道停止。每个横向溢流排水口形成在相应的通道停止件内。由于使用两个掩模层，每个横向溢出漏极的一个边缘与相应的通道停止件的边缘对准或基本对准。

42. 发明授权

US08378398B2 Photodetector isolation in image sensors 有权
标题翻译：图像传感器中的光电检测器隔离
公开(公告)号：US08378398B2
公开(公告)日：2013-02-19
申请号：US12966224
申请日：2010-12-13
申请人： Hung Q. Doan , Eric G. Stevens , Robert M. Guidash
发明人： Hung Q. Doan , Eric G. Stevens , Robert M. Guidash
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/1463 , H01L27/14643
摘要： Shallow trench isolation regions are disposed in an n-type silicon semiconductor layer laterally adjacent to a collection region of a photodetector and laterally adjacent to a charge-to-voltage conversion region. The shallow trench isolation regions each include a trench disposed in the silicon semiconductor layer and a first dielectric structure disposed along an interior bottom and sidewalls of each trench. A second dielectric structure is disposed over the pinning layer. The dielectric structures include a silicon nitride layer disposed over an oxide layer. An n-type isolation layer is disposed along only a portion of the exterior bottom of the trench and the exterior sidewall of the trench immediately adjacent to the photodetector. The n-type isolation layer is not disposed along the remaining portion of the bottom or the opposing exterior sidewall of the trench.
摘要翻译：浅沟槽隔离区设置在与光电检测器的收集区域相邻并且横向邻近电荷 - 电压转换区域的n型硅半导体层中。浅沟槽隔离区域各自包括设置在硅半导体层中的沟槽和沿着每个沟槽的内部底部和侧壁设置的第一介电结构。第二电介质结构设置在钉扎层之上。电介质结构包括设置在氧化物层上的氮化硅层。 n型隔离层仅沿着沟槽的外部底部的一部分和紧邻光电检测器的沟槽的外侧壁设置。 n型隔离层不沿着沟槽的底部或相对的外侧壁的剩余部分设置。

43. 发明授权

US08048711B2 Method for forming deep isolation in imagers 有权
标题翻译：在成像器中形成深度隔离的方法
公开(公告)号：US08048711B2
公开(公告)日：2011-11-01
申请号：US12942507
申请日：2010-11-09
申请人： Hung Q. Doan , Eric G. Stevens
发明人： Hung Q. Doan , Eric G. Stevens
IPC分类号： H01L31/18
CPC分类号： H01L27/1463 , H01L21/2253 , H01L27/14683
摘要： An image sensor having an imaging area that includes a substrate layer and a plurality of pixels formed therein. Multiple pixels each include a photodetector formed in the substrate layer. Isolation layers are formed in the substrate layer by performing a series of implants of one or more dopants of a first conductivity type into the substrate layer. Each isolation layer implant is performed with a different energy than the other isolation layer implants in the series and each implant implants the one or more dopants into the entire imaging area. The photodetectors are formed in the substrate layer by performing a series of implants of one or more dopants of a second conductivity type into each pixel in the substrate layer. Each photodetector implant is performed with a different energy than the other photodetector implants in the series.
摘要翻译：一种图像传感器，其具有包括基板层和形成在其中的多个像素的成像区域。多个像素各自包括形成在基底层中的光电检测器。通过将一种或多种第一导电类型的掺杂剂的一系列植入物进入衬底层，在衬底层中形成隔离层。每个隔离层植入物以与串联中的其它隔离层植入物不同的能量来执行，并且每个植入物将一种或多种掺杂剂植入整个成像区域。通过在衬底层中的每个像素中执行一系列对第二导电类型的掺杂剂的一种或多种注入物，在衬底层中形成光电检测器。每个光电探测器植入物以与该系列中的其它光电检测器植入物不同的能量来执行。

44. 发明申请

US20110156112A1 IMAGE SENSOR WITH DOPED TRANSFER GATE 有权
标题翻译：带传输门的图像传感器
公开(公告)号：US20110156112A1
公开(公告)日：2011-06-30
申请号：US12942517
申请日：2010-11-09
申请人： Hung Q. Doan , Eric G. Stevens
发明人： Hung Q. Doan , Eric G. Stevens
IPC分类号： H01L31/113 , H01L31/18
CPC分类号： H01L27/14689 , H01L27/14603 , H01L27/14609 , H01L27/14612 , H01L27/14806
摘要： An image sensor includes an array of pixels, with at least one pixel including a photodetector formed in a substrate layer and a transfer gate disposed adjacent to the photodetector. The substrate layer further includes multiple charge-to-voltage conversion regions. A single photodetector can transfer collected charge to a single charge-to-voltage conversion region, or alternatively multiple photodetectors can transfer collected charge to a common charge-to-voltage conversion region shared by the photodetectors. An implant region formed when dopants are implanted into the substrate layer to form source/drain implant regions is disposed in only a portion of each transfer gate while each charge-to-voltage conversion region is substantially devoid of the implant region.
摘要翻译：图像传感器包括像素阵列，其中至少一个像素包括形成在基底层中的光电检测器和邻近光电检测器设置的传输栅极。衬底层还包括多个电荷 - 电压转换区域。单个光电检测器可以将收集的电荷转移到单个电荷至电压转换区域，或者多个光电检测器可以将收集的电荷转移到由光电检测器共享的公共电荷 - 电压转换区域。当掺杂剂注入到衬底层中以形成源极/漏极注入区域时形成的注入区域仅设置在每个传输栅极的一部分中，而每个电荷 - 电压转换区域基本上没有植入区域。

45. 发明授权

US07875916B2 Photodetector and n-layer structure for improved collection efficiency 有权
标题翻译：光电检测器和n层结构，提高收集效率
公开(公告)号：US07875916B2
公开(公告)日：2011-01-25
申请号：US11453354
申请日：2006-06-15
申请人： Eric G. Stevens , David N. Nichols
发明人： Eric G. Stevens , David N. Nichols
IPC分类号： H01L31/062
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14643 , H01L31/035236
摘要： An image sensor with an image area having a plurality of photodetectors of a first conductivity type includes a substrate of the second conductivity type; a first layer of the first conductivity type spanning the image area; a second layer of the second conductivity type; wherein the first layer is between the substrate and the second layer, and the plurality of photodetectors is disposed in the second layer and abut the first layer.
摘要翻译：具有第一导电类型的多个光电检测器的具有图像区域的图像传感器包括第二导电类型的基板; 跨越图像区域的第一导电类型的第一层; 第二导电类型的第二层; 其中所述第一层位于所述衬底和所述第二层之间，并且所述多个光电检测器设置在所述第二层中并邻接所述第一层。

46. 发明申请

US20100140729A1 LATERAL OVERFLOW DRAIN AND CHANNEL STOP REGIONS IN IMAGE SENSORS 有权
标题翻译：图像传感器中的横向溢流漏斗和通道停止区域
公开(公告)号：US20100140729A1
公开(公告)日：2010-06-10
申请号：US12609296
申请日：2009-10-30
申请人： Edmund K. Banghart , Eric G. Stevens , Hung Q. Doan
发明人： Edmund K. Banghart , Eric G. Stevens , Hung Q. Doan
IPC分类号： H01L21/265 , H01L31/10
CPC分类号： H01L27/14887 , H01L27/14656 , H01L27/14674 , H01L27/14683 , H01L27/1485
摘要： A lateral overflow drain and a channel stop are fabricated using a double mask process. Each lateral overflow drain is formed within a respective channel stop. Due to the use of two mask layers, one edge of each lateral overflow drain is aligned, or substantially aligned, with an edge of a respective channel stop.
摘要翻译：使用双掩模工艺制造横向溢流漏斗和通道停止。每个横向溢流排水口形成在相应的通道停止件内。由于使用两个掩模层，每个横向溢出漏极的一个边缘与相应的通道停止件的边缘对准或基本对准。

47. 发明授权

US07492404B2 Fast flush structure for solid-state image sensors 有权
标题翻译：用于固态图像传感器的快速齐平结构
公开(公告)号：US07492404B2
公开(公告)日：2009-02-17
申请号：US11052347
申请日：2005-02-07
申请人： Eric G. Stevens , John P. Shepherd , David N. Nichols
发明人： Eric G. Stevens , John P. Shepherd , David N. Nichols
IPC分类号： H04N3/14
CPC分类号： H01L27/1485 , H01L27/14887
摘要： An image sensor includes a substrate; a plurality of pixels on the substrate, one or more of the pixels comprises (i) first and second charge-storage regions having at least one photosensitive area; (ii) a lateral overflow drain; (iii) a first lateral overflow gate adjacent the first charge-storage regions that passes substantially all charges from the first charge-storage region to the lateral overflow drain; and (iv) a second lateral gate adjacent the second charge-storage region that passes excess photo-generated charge into the lateral overflow drain for blooming control.
摘要翻译：图像传感器包括基板; 基板上的多个像素，一个或多个像素包括（i）具有至少一个感光区域的第一和第二电荷存储区域; （ii）横向溢流排水管; （iii）与所述第一电荷存储区相邻的第一横向溢出门，所述第一电荷存储区基本上将所有电荷从所述第一电荷存储区域传递到所述横向溢流漏极; 和（iv）邻近第二电荷存储区域的第二横向栅极，其将过量的光生电荷传递到横向溢流漏极中以进行开花控制。

48. 发明授权

US07402787B2 Method of thin lightshield process for solid-state image sensors 有权
标题翻译：固态图像传感器薄透镜方法
公开(公告)号：US07402787B2
公开(公告)日：2008-07-22
申请号：US11927870
申请日：2007-10-30
申请人： David N. Nichols , Eric G. Stevens , Stephen L. Kosman
发明人： David N. Nichols , Eric G. Stevens , Stephen L. Kosman
IPC分类号： H01L21/00
CPC分类号： H01L27/14623 , H01L27/14636 , H01L27/14685
摘要： An image sensor includes a substrate having photosensitive areas; an insulator spanning at least a portion of the substrate; and a first and second layer of a multi-layer metallization structure, wherein the first layer forms light shield regions over selected portions of the photosensitive area as well forming circuit interconnections and barrier regions to prevent spiking into the substrate or gates at contacts in the non-imaging area; and the second layer spanning the interconnections and barrier regions of the first layer only over the non-imaging areas and the second layer overlays edges of the first layer.
摘要翻译：图像传感器包括具有感光区域的基板; 跨越所述基板的至少一部分的绝缘体; 以及多层金属化结构的第一和第二层，其中所述第一层在所述感光区域的选定部分上形成光屏蔽区域，并形成电路互连和阻挡区域，以防止尖端进入衬底或在非接触的接触处的栅极成像面积并且第二层仅在非成像区域上跨越第一层的互连和阻挡区域，并且第二层覆盖第一层的边缘。

49. 发明申请

US20080057612A1 METHOD FOR ADDING AN IMPLANT AT THE SHALLOW TRENCH ISOLATION CORNER IN A SEMICONDUCTOR SUBSTRATE 审中-公开
标题翻译：用于在半导体衬底中的浅层分离器角上添加植入物的方法
公开(公告)号：US20080057612A1
公开(公告)日：2008-03-06
申请号：US11840299
申请日：2007-08-17
申请人： Hung Q. Doan , Eric G. Stevens
发明人： Hung Q. Doan , Eric G. Stevens
IPC分类号： H01L21/76 , H01L21/00
CPC分类号： H01L21/76237 , H01L21/823481 , H01L27/1463 , H01L27/14689
摘要： A method for fabricating corner implants in the shallow trench isolation regions of an image sensor includes the steps of forming a photoresist layer on a first hard mask layer overlying an etch-stop layer on a semiconductor substrate. The photoresist mask is patterned to create an opening and the portion of the first hard mask layer exposed in the opening is etched down to the etch-stop layer. A first dopant is implanted into the semiconductor substrate through the exposed etch-stop layer. The photoresist mask is removed and a second hard mask layer is formed on the remaining structure and etched to create sidewall spacers along the side edges of the first hard mask layer. The etch stop layer and the semiconductor substrate positioned between the sidewall spacers are etched to create a trench and a second dopant implanted into the side and bottom walls of the trench.
摘要翻译：用于在图像传感器的浅沟槽隔离区域中制造拐角植入物的方法包括以下步骤：在覆盖半导体衬底上的蚀刻停止层的第一硬掩模层上形成光致抗蚀剂层。图案化光致抗蚀剂掩模以产生开口，并且暴露在开口中的第一硬掩模层的部分被蚀刻到蚀刻停止层。通过暴露的蚀刻停止层将第一掺杂剂注入到半导体衬底中。去除光致抗蚀剂掩模，并且在剩余结构上形成第二硬掩模层，并蚀刻以沿着第一硬掩模层的侧边缘产生侧壁间隔物。蚀刻停止层和位于侧壁间隔物之间的半导体衬底被蚀刻以产生沟槽，并且第二掺杂剂注入到沟槽的侧壁和底壁中。

50. 发明授权

US06624453B2 Lateral overflow drain, anti-blooming structure for CCD devices having improved breakdown voltage 有权
标题翻译：具有改善的击穿电压的CCD器件的横向溢出漏极，防喷射结构
公开(公告)号：US06624453B2
公开(公告)日：2003-09-23
申请号：US09945034
申请日：2001-08-31
申请人： Edmund K. Banghart , Eric G. Stevens
发明人： Edmund K. Banghart , Eric G. Stevens
IPC分类号： H01L31062
CPC分类号： H01L27/14887
摘要： An image sensor having an anti-blooming structure, where the image sensor comprises a substrate of a first conductivity type; a dielectric having a first thin portion and a second thick portion; a buried channel of the second conductivity type within the substrate substantially spanning the first thin portion; and a lateral overflow drain region of the second conductivity type disposed substantially in its entirety spanning a portion of the second thick portion for collecting excess photogenerated charges for preventing blooming.
摘要翻译：一种具有抗晕花结构的图像传感器，其中所述图像传感器包括第一导电类型的衬底; 具有第一薄部分和第二厚部分的电介质; 衬底内的第二导电类型的掩埋沟道，基本跨越第一薄部分; 以及第二导电类型的横向溢出漏极区域，其基本上整体上跨越第二厚部分的一部分，用于收集用于防止起霜的过量光生电荷。

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