专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明申请

US20130076954A1 DARK REFERENCE IN CCD IMAGE SENSORS 有权
标题翻译： CCD图像传感器中的深刻参考
公开(公告)号：US20130076954A1
公开(公告)日：2013-03-28
申请号：US13599063
申请日：2012-08-30
申请人： John P. McCarten , Eric J. Meisenzahl
发明人： John P. McCarten , Eric J. Meisenzahl
IPC分类号： H04N5/335
CPC分类号： H01L27/14843 , H01L27/14818
摘要： In various embodiments, image sensors include an imaging array of optically active pixels, a dark-reference region of optically inactive pixels, and two light shields disposed over the dark-reference region and having openings therein.
摘要翻译：在各种实施例中，图像传感器包括光学有源像素的成像阵列，光学非活动像素的暗参考区域和设置在暗参考区域上并且在其中具有开口的两个光屏蔽。

42. 发明申请

US20110115957A1 BACKSIDE ILLUMINATED IMAGE SENSOR WITH REDUCED DARK CURRENT 审中-公开
标题翻译：背光照明图像传感器，具有降低的电流
公开(公告)号：US20110115957A1
公开(公告)日：2011-05-19
申请号：US13012843
申请日：2011-01-25
申请人： Frederick T. Brady , John P. McCarten
发明人： Frederick T. Brady , John P. McCarten
IPC分类号： H04N5/335 , H01L31/14
CPC分类号： H01L27/1203 , H01L21/84 , H01L27/14601 , H01L27/1464 , H01L27/14683
摘要： A backside illuminated image sensor comprises a sensor layer implementing a plurality of photosensitive elements of a pixel array, and an oxide layer adjacent a backside surface of the sensor layer. The sensor layer comprises a seed layer and an epitaxial layer formed over the seed layer, with the seed layer having a cross-sectional doping profile in which a designated dopant is substantially confined to a pixel array area of the sensor layer. The doping profile advantageously reduces dark current generated at an interface between the sensor layer and the oxide layer. The image sensor may be implemented in a digital camera or other type of digital imaging device.
摘要翻译：背面照明图像传感器包括实现像素阵列的多个感光元件的传感器层和邻近传感器层的背面的氧化物层。传感器层包括种子层和形成在种子层上的外延层，种子层具有横截面掺杂分布，其中指定的掺杂剂基本上限制在传感器层的像素阵列区域。掺杂分布有利地减少了在传感器层和氧化物层之间的界面处产生的暗电流。图像传感器可以在数字照相机或其他类型的数字成像装置中实现。

43. 发明申请

US20130075792A1 METAL-STRAPPED CCD IMAGE SENSORS 有权
标题翻译：金属条形CCD图像传感器
公开(公告)号：US20130075792A1
公开(公告)日：2013-03-28
申请号：US13623317
申请日：2012-09-20
申请人： John P. McCarten
发明人： John P. McCarten
IPC分类号： H01L27/148
CPC分类号： H01L27/14843
摘要： In various embodiments, image sensors include strapping grids of vertical and horizontal strapping lines conducting phase-control signals to underlying gate conductors that control transfer of charge within the image sensor.
摘要翻译：在各种实施例中，图像传感器包括垂直和水平捆扎带的捆扎网格，其将相位控制信号传导到控制图像传感器内的电荷转移的底层栅极导体。

44. 发明申请

US20130027597A1 IMAGE SENSOR WITH CONTROLLABLE VERTICALLY INTEGRATED PHOTODETECTORS 有权
公开(公告)号：US20130027597A1
公开(公告)日：2013-01-31
申请号：US13193677
申请日：2011-07-29
申请人： John P. McCarten , Robert Michael Guidash
发明人： John P. McCarten , Robert Michael Guidash
IPC分类号： H04N5/335
CPC分类号： H01L27/1461 , H01L27/14621 , H01L27/14647 , H01L27/14656
摘要： An image sensor includes front-side and backside photodetectors of a first conductivity type disposed in a substrate layer of the first conductivity type. A front-side pinning layer of a second conductivity type is connected to a first contact. The first contact receives a predetermined potential. A backside pinning layer of the second conductivity type is connected to a second contact. The second contact receives an adjustable and programmable potential.

45. 发明授权

US07508432B2 CCD with improved substrate voltage setting circuit 有权
标题翻译： CCD具有改进的基板电压设置电路
公开(公告)号：US07508432B2
公开(公告)日：2009-03-24
申请号：US11488961
申请日：2006-07-19
申请人： Christopher Parks , John P. McCarten
发明人： Christopher Parks , John P. McCarten
IPC分类号： H04N3/14 , H04N5/335 , H04N9/64 , H01L21/00
CPC分类号： H04N5/335 , H01L27/14843 , H01L27/14887 , H04N5/343 , H04N5/347 , H04N5/3592 , H04N5/3728
摘要： An image sensor includes a plurality of pixels for converting incident photons into electrical charge; an overflow drain to draw off excess charge from at one or more of the pixels; a mechanism for summing charge from two or more of the pixels; a first network of resistive devices generating a first overflow drain voltage where at least one of the resistive devices has, in parallel, a fuse that can be opened in response to an external stimulus to provide the optimum overflow drain voltage for pixel anti-blooming protection and saturation signal level for when a plurality of pixels are summed together; and a second network of resistive devices connected to the first network of resistive devices generating a second overflow drain voltage where the second overflow drain voltage is a fraction of the first overflow drain voltage and the second overflow drain voltage provides the optimum overflow drain voltage for pixel anti-blooming and saturation signal level for when none or substantially none of the plurality of pixels are summed together.
摘要翻译：图像传感器包括用于将入射光子转换成电荷的多个像素; 溢出漏极，以从一个或多个像素抽出多余的电荷; 用于从两个或更多个像素求和电荷的机构; 电阻器件的第一网络产生第一溢出漏极电压，其中至少一个电阻器件具有并联的并联的熔丝，其可以响应于外部刺激而被打开以提供用于像素防起霜保护的最佳溢出漏极电压以及当多个像素相加在一起时的饱和度信号电平; 以及连接到第一电阻器件网络的电阻器件的第二网络，其产生第二溢出漏极电压，其中第二溢出漏极电压是第一溢出漏极电压的一部分，并且第二溢出漏极电压为像素提供最佳溢出漏极电压当没有或基本上没有多个像素被相加在一起时，防起霜和饱和信号电平。

46. 发明申请

US20080204585A1 IMAGE SENSOR WITH VARIABLE RESOLUTION AND SENSITIVITY 有权
标题翻译：具有可变分辨率和灵敏度的图像传感器
公开(公告)号：US20080204585A1
公开(公告)日：2008-08-28
申请号：US11680078
申请日：2007-02-28
申请人： Eric J. Meisenzahl , John P. McCarten
发明人： Eric J. Meisenzahl , John P. McCarten
IPC分类号： H04N5/335
CPC分类号： H04N9/045 , H01L27/14831 , H04N5/3458 , H04N5/347 , H04N5/372
摘要： A charge-coupled device image sensor includes (a) a two-dimensional array of pixels having a plurality of rows and columns, the two-dimensional array includes: (i) a plurality of gates arranged as a charge-coupled device; wherein the array further includes a plurality of charge-coupled devices that are arranged to be clocked by one or more common timing signals; (ii) a transition region, electrically connected to the array, having a first and second row of gates in which the second row is electrically mated into a plurality of first and second pairs of gates in which first pairs of gates are clocked by a first common timing signal and second pairs of gates are clocked by a second common timing signal; wherein the first row of gates are all clocked with a third common timing signal; and (b) a horizontal shift register adjacent the second row of gates for receiving charge from the second row of gates.
摘要翻译：电荷耦合器件图像传感器包括：（a）具有多个行和列的像素的二维阵列，所述二维阵列包括：（i）布置为电荷耦合器件的多个栅极; 其中所述阵列还包括多个电荷耦合器件，其被布置成由一个或多个公共定时信号计时; （ii）电连接到所述阵列的过渡区域，具有第一和第二排栅极，其中所述第二行电配配成多个第一和第二对栅极，其中第一对栅极由第一和第二栅极公共定时信号和第二对门由第二公共定时信号计时; 其中所述第一行门全部用第三公共定时信号计时; 和（b）与所述第二排栅极相邻的水平移位寄存器，用于从所述第二排栅极接收电荷。

47. 发明授权

US08339494B1 Image sensor with controllable vertically integrated photodetectors 有权
标题翻译：具有可控垂直集成光电检测器的图像传感器
公开(公告)号：US08339494B1
公开(公告)日：2012-12-25
申请号：US13193722
申请日：2011-07-29
申请人： John P. McCarten , Robert Michael Guidash
发明人： John P. McCarten , Robert Michael Guidash
IPC分类号： H04N3/14 , H01L21/00 , H01L31/062
CPC分类号： H01L27/14609 , H01L27/1463 , H01L27/1464 , H01L27/14643
摘要： An image sensor includes front-side and backside photodetectors of a first conductivity type disposed in a substrate layer of the first conductivity type. A front-side pinning layer of a second conductivity type is connected to a first contact. The first contact receives a predetermined potential. A backside pinning layer of the second conductivity type is connected to a second contact. The second contact receives an adjustable and programmable potential.
摘要翻译：图像传感器包括设置在第一导电类型的衬底层中的第一导电类型的前侧和后侧光电检测器。第二导电类型的前侧钉扎层连接到第一触点。第一个触点接收到预定的电位。第二导电类型的背面钉扎层连接到第二触点。第二个触点接收可调节和可编程的电位。

48. 发明申请

US20100006970A1 BACKSIDE ILLUMINATED IMAGE SENSOR WITH REDUCED DARK CURRENT 有权
标题翻译：背光照明图像传感器，具有降低的电流
公开(公告)号：US20100006970A1
公开(公告)日：2010-01-14
申请号：US12169723
申请日：2008-07-09
申请人： Frederick T. Brady , John P. McCarten
发明人： Frederick T. Brady , John P. McCarten
IPC分类号： H01L31/101 , H01L31/18
CPC分类号： H01L27/1203 , H01L21/84 , H01L27/14601 , H01L27/1464 , H01L27/14683
摘要： A backside illuminated image sensor comprises a sensor layer implementing a plurality of photosensitive elements of a pixel array, and an oxide layer adjacent a backside surface of the sensor layer. The sensor layer comprises a seed layer and an epitaxial layer formed over the seed layer, with the seed layer having a cross-sectional doping profile in which a designated dopant is substantially confined to a pixel array area of the sensor layer. The doping profile advantageously reduces dark current generated at an interface between the sensor layer and the oxide layer. The image sensor may be implemented in a digital camera or other type of digital imaging device.
摘要翻译：背面照明图像传感器包括实现像素阵列的多个感光元件的传感器层和邻近传感器层的背面的氧化物层。传感器层包括种子层和形成在种子层上的外延层，种子层具有横截面掺杂分布，其中指定的掺杂剂基本上限制在传感器层的像素阵列区域。掺杂分布有利地减少了在传感器层和氧化物层之间的界面处产生的暗电流。图像传感器可以在数字照相机或其他类型的数字成像装置中实现。

49. 发明申请

US20080017892A1 CCD with improved substrate voltage setting circuit 有权
标题翻译： CCD具有改进的基板电压设置电路
公开(公告)号：US20080017892A1
公开(公告)日：2008-01-24
申请号：US11488961
申请日：2006-07-19
申请人： Christopher Parks , John P. McCarten
发明人： Christopher Parks , John P. McCarten
IPC分类号： H01L27/148
CPC分类号： H04N5/335 , H01L27/14843 , H01L27/14887 , H04N5/343 , H04N5/347 , H04N5/3592 , H04N5/3728
摘要： An image sensor includes a plurality of pixels for converting incident photons into electrical charge; an overflow drain to draw off excess charge from at one or more of the pixels; a mechanism for summing charge from two or more of the pixels; a first network of resistive devices generating a first overflow drain voltage where at least one of the resistive devices has, in parallel, a fuse that can be opened in response to an external stimulus to provide the optimum overflow drain voltage for pixel anti-blooming protection and saturation signal level for when a plurality of pixels are summed together; and a second network of resistive devices connected to the first network of resistive devices generating a second overflow drain voltage where the second overflow drain voltage is a fraction of the first overflow drain voltage and the second overflow drain voltage provides the optimum overflow drain voltage for pixel anti-blooming and saturation signal level for when none or substantially none of the plurality of pixels are summed together.
摘要翻译：图像传感器包括用于将入射光子转换成电荷的多个像素; 溢出漏极，以从一个或多个像素抽出多余的电荷; 用于从两个或更多个像素求和电荷的机构; 电阻器件的第一网络产生第一溢出漏极电压，其中至少一个电阻器件具有并联的并联的熔丝，其可以响应于外部刺激而被打开以提供用于像素防起霜保护的最佳溢出漏极电压以及当多个像素相加在一起时的饱和度信号电平; 以及连接到第一电阻器件网络的电阻器件的第二网络，其产生第二溢出漏极电压，其中第二溢出漏极电压是第一溢出漏极电压的一部分，并且第二溢出漏极电压为像素提供最佳溢出漏极电压当没有或基本上没有多个像素被相加在一起时，防起霜和饱和信号电平。

50. 发明授权

US08946612B2 Image sensor with controllable vertically integrated photodetectors 有权
公开(公告)号：US08946612B2
公开(公告)日：2015-02-03
申请号：US13193745
申请日：2011-07-29
申请人： John P. McCarten , Robert Michael Guidash
发明人： John P. McCarten , Robert Michael Guidash
IPC分类号： H01L27/00 , H01L27/146
CPC分类号： H01L27/14603 , H01L27/1463 , H01L27/1464 , H01L27/14643
摘要： An image sensor includes front-side and backside photodetectors of a first conductivity type disposed in a substrate layer of the first conductivity type. A front-side pinning layer of a second conductivity type is connected to a first contact. The first contact receives a predetermined potential. A backside pinning layer of the second conductivity type is connected to a second contact. The second contact receives an adjustable and programmable potential.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式