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    • 43. 发明授权
    • Deposition tool cleaning process having a moving plasma zone
    • 具有移动等离子体区域的沉积工具清洁工艺
    • US07815738B2
    • 2010-10-19
    • US11459819
    • 2006-07-25
    • Ignacio BlancoJin ZhaoNathan Kruse
    • Ignacio BlancoJin ZhaoNathan Kruse
    • C23C16/455H01L21/306
    • H01J37/32082B08B7/0035C23C16/4405H01J2237/335Y10S438/905
    • The present invention provides, in one embodiment, a process for cleaning a deposition chamber (100). The process includes a step (100) of forming a reactive plasma cleaning zone by dissociating a gaseous fluorocompound introduced into a deposition chamber having an interior surface and in a presence of a plasma. The process (100) further includes a step (120) of ramping a flow rate of said gaseous fluorocompound to move the reactive plasma cleaning zone throughout the deposition chamber, thereby preventing a build-up of localized metal compound deposits on the interior surface. Other embodiments advantageously incorporate the process (100) into a system (200) for cleaning a deposition chamber (205) and a method of manufacturing semiconductor devices (300).
    • 在一个实施例中,本发明提供了一种用于清洁沉积室(100)的方法。 该方法包括通过使引入到具有内表面并且存在等离子体的沉积室中的气态氟化合物离解形成反应性等离子体清洗区的步骤(100)。 方法(100)还包括使所述气体氟化合物的流速升高以使整个沉积室中的反应性等离子体清洗区域移动的步骤(120),从而防止局部金属化合物沉积在内表面上。 其他实施例有利地将工艺(100)并入到用于清洁沉积室(205)的系统(200)和制造半导体器件(300)的方法中。
    • 48. 发明申请
    • Deposition tool cleaning process having a moving plasma zone
    • 具有移动等离子体区域的沉积工具清洁工艺
    • US20050045213A1
    • 2005-03-03
    • US10653661
    • 2003-09-02
    • Ignacio BlancoJin ZhaoNathan Kruse
    • Ignacio BlancoJin ZhaoNathan Kruse
    • B08B7/00C23C16/44B08B9/00
    • H01J37/32082B08B7/0035C23C16/4405H01J2237/335Y10S438/905
    • The present invention provides, in one embodiment, a process for cleaning a deposition chamber (100). The process includes a step (100) of forming a reactive plasma cleaning zone by dissociating a gaseous fluorocompound introduced into a deposition chamber having an interior surface and in a presence of a plasma. The process (100) further includes a step (120) of ramping a flow rate of said gaseous fluorocompound to move the reactive plasma cleaning zone throughout the deposition chamber, thereby preventing a build-up of localized metal compound deposits on the interior surface. Other embodiments advantageously incorporate the process (100) into a system (200) for cleaning a deposition chamber (205) and a method of manufacturing semiconductor devices (300).
    • 在一个实施例中,本发明提供了一种用于清洁沉积室(100)的方法。 该方法包括通过使引入到具有内表面并且存在等离子体的沉积室中的气态氟化合物离解形成反应性等离子体清洗区的步骤(100)。 方法(100)还包括使所述气体氟化合物的流速升高以使整个沉积室中的反应性等离子体清洗区域移动的步骤(120),从而防止局部金属化合物沉积在内表面上。 其他实施例有利地将工艺(100)并入到用于清洁沉积室(205)的系统(200)和制造半导体器件(300)的方法中。