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41. 发明授权

US07605327B2 Photovoltaic devices fabricated from nanostructured template 失效
标题翻译：由纳米结构模板制造的光伏器件
公开(公告)号：US07605327B2
公开(公告)日：2009-10-20
申请号：US10771092
申请日：2004-02-02
申请人： Martin R. Roscheisen , Brian M. Sager , Karl Pichler
发明人： Martin R. Roscheisen , Brian M. Sager , Karl Pichler
IPC分类号： H01L31/00
CPC分类号： B82Y10/00 , B82Y30/00 , H01L31/0352 , H01L31/03529 , H01L51/0036 , H01L51/0037 , H01L51/0038 , H01L51/0039 , H01L51/0047 , H01L51/0051 , H01L51/0052 , H01L51/0062 , H01L51/0064 , H01L51/0078 , H01L51/0094 , H01L51/4213 , H01L51/422 , H01L51/4226 , H01L51/4233 , H01L51/4253 , H01L51/447 , Y02E10/549 , Y02P70/521
摘要： Photovoltaic devices, such as solar cells, and methods for their manufacture are disclosed. A device may be characterized by an architecture having a nanostructured template made from an n-type first charge transfer material with template elements between about 1 nm and about 500 nm in diameter with about 1012 to 1016 elements/m2. A p-type second charge-transfer material optionally coats the walls of the template elements leaving behind additional space. A p-type third charge-transfer material fills the additional space volumetrically interdigitating with the second charge transfer material.
摘要翻译：公开了太阳能电池等光伏器件及其制造方法。器件的特征在于具有由n型第一电荷转移材料制成的纳米结构化模板的结构，其中模板元素的直径在约1nm至约500nm之间，具有约1012至1016个元素/ m 2。 p型第二电荷转移材料任选地涂覆模板元件的壁，留下额外的空间。 p型第三电荷转移材料填充与第二电荷转移材料体积相互交错的附加空间。

42. 发明申请

US20080305269A1 Formation of CIGS absorber layer materials using atomic layer deposition and high throughput surface treatment 审中-公开
标题翻译：使用原子层沉积和高通量表面处理形成CIGS吸收层材料
公开(公告)号：US20080305269A1
公开(公告)日：2008-12-11
申请号：US12044899
申请日：2008-03-07
申请人： Brian M. Sager , Martin R. Roscheisen , Craig Leidholm
发明人： Brian M. Sager , Martin R. Roscheisen , Craig Leidholm
IPC分类号： B05D3/02
CPC分类号： C23C16/45544 , C23C16/405 , C23C16/458 , C23C16/4581 , C23C16/545 , C25D7/0614 , C25D17/02 , H01L31/022425 , H01L31/0322 , H01L31/0392 , H01L31/03926 , H01L31/1864 , H01L31/1876 , Y02E10/541 , Y02P70/521
摘要： An absorber layer may be formed on a substrate using atomic layer deposition reactions. An absorber layer containing elements of groups IB, IIIA and VIB may be formed by placing a substrate in a treatment chamber and performing atomic layer deposition of a group IB element and/or one or more group IIIA elements from separate sources onto a substrate to form a film. A group VIA element is then incorporated into the film and annealed to form the absorber layer. The absorber layer may be greater than about 25 nm thick. The substrate may be coiled into one or more coils in such a way that adjacent turns of the coils do not touch one another. The coiled substrate may be placed in a treatment chamber where substantially an entire surface of the one or more coiled substrates may be treated by an atomic layer deposition process. One or more group IB elements and/or one or more group IIIA elements may be deposited onto the substrate in a stoichiometrically controlled ratio by atomic layer deposition using one or more self limiting reactions.
摘要翻译：可以使用原子层沉积反应在衬底上形成吸收层。包含IB，IIIA和VIB族元素的吸收层可以通过将基底放置在处理室中并且将IB族元素和/或一种或多种IIIA族元素从单独的源原子层沉积到基底上形成，以形成一个电影。然后将VIA族元素并入膜中并退火以形成吸收层。吸收层可以大于约25nm厚。衬底可以被卷绕成一个或多个线圈，使得线圈的相邻匝不彼此接触。卷绕的基板可以放置在处理室中，其中可以通过原子层沉积工艺来处理一个或多个卷绕的基板的基本上整个表面。可以通过使用一个或多个自限制反应的原子层沉积以化学计量控制的比例将一个或多个IB族元素和/或一个或多个IIIA族元素沉积到基底上。

43. 发明申请

US20080142081A1 SOLUTION-BASED FABRICATION OF PHOTOVOLTAIC CELL 失效
公开(公告)号：US20080142081A1
公开(公告)日：2008-06-19
申请号：US11933136
申请日：2007-10-31
申请人： Dong Yu , Jacqueline Fidanza , Brian M. Sager
发明人： Dong Yu , Jacqueline Fidanza , Brian M. Sager
IPC分类号： H01L31/0216 , C09D11/00 , B05C1/08
CPC分类号： H01L31/06 , B82Y5/00 , B82Y10/00 , B82Y30/00 , C23C18/1204 , C23C18/1266 , C23C18/1295 , H01L31/0322 , H01L31/0749 , H01L31/18 , Y02E10/541 , Y02P70/521
摘要： An ink for forming CIGS photovoltaic cell active layers is disclosed along with methods for making the ink, methods for making the active layers and a solar cell made with the active layer. The ink contains a mixture of nanoparticles of elements of groups IB, IIIA and (optionally) VIA. The particles are in a desired particle size range of between about 1 nm and about 500 nm in diameter, where a majority of the mass of the particles comprises particles ranging in size from no more than about 40% above or below an average particle size or, if the average particle size is less than about 5 nanometers, from no more than about 2 nanometers above or below the average particle size. The use of such ink avoids the need to expose the material to an H2Se gas during the construction of a photovoltaic cell and allows more uniform melting during film annealing, more uniform intermixing of nanoparticles, and allows higher quality absorber films to be formed.

44. 发明申请

US20080135812A1 SOLUTION-BASED FABRICATION OF PHOTOVOLTAIC CELL 有权
公开(公告)号：US20080135812A1
公开(公告)日：2008-06-12
申请号：US11933400
申请日：2007-10-31
申请人： Dong Yu , Jacqueline Fidanza , Brian M. Sager
发明人： Dong Yu , Jacqueline Fidanza , Brian M. Sager
IPC分类号： H01B1/02 , B05D1/00 , B05D1/02 , B01J19/10 , B41F31/00
CPC分类号： H01L31/06 , B82Y5/00 , B82Y10/00 , B82Y30/00 , C23C18/1204 , C23C18/1266 , C23C18/1295 , H01L31/0322 , H01L31/0749 , H01L31/18 , Y02E10/541 , Y02P70/521
摘要： An ink for forming CIGS photovoltaic cell active layers is disclosed along with methods for making the ink, methods for making the active layers and a solar cell made with the active layer. The ink contains a mixture of nanoparticles of elements of groups IB, IIIA and (optionally) VIA. The particles are in a desired particle size range of between about 1 nm and about 500 nm in diameter, where a majority of the mass of the particles comprises particles ranging in size from no more than about 40% above or below an average particle size or, if the average particle size is less than about 5 nanometers, from no more than about 2 nanometers above or below the average particle size. The use of such ink avoids the need to expose the material to an H2Se gas during the construction of a photovoltaic cell and allows more uniform melting during film annealing, more uniform intermixing of nanoparticles, and allows higher quality absorber films to be formed.

45. 发明申请

US20080135811A1 SOLUTION-BASED FABRICATION OF PHOTOVOLTAIC CELL 审中-公开
公开(公告)号：US20080135811A1
公开(公告)日：2008-06-12
申请号：US11933375
申请日：2007-10-31
申请人： Dong Yu , Jacqueline Fidanza , Brian M. Sager
发明人： Dong Yu , Jacqueline Fidanza , Brian M. Sager
IPC分类号： H01B1/02
CPC分类号： H01L31/06 , B82Y5/00 , B82Y10/00 , B82Y30/00 , C23C18/1204 , C23C18/1266 , C23C18/1295 , H01L31/0322 , H01L31/0749 , H01L31/18 , Y02E10/541 , Y02P70/521
摘要： An ink for forming CIGS photovoltaic cell active layers is disclosed along with methods for making the ink, methods for making the active layers and a solar cell made with the active layer. The ink contains a mixture of nanoparticles of elements of groups IB, IIIA and (optionally) VIA. The particles are in a desired particle size range of between about 1 nm and about 500 nm in diameter, where a majority of the mass of the particles comprises particles ranging in size from no more than about 40% above or below an average particle size or, if the average particle size is less than about 5 nanometers, from no more than about 2 nanometers above or below the average particle size. The use of such ink avoids the need to expose the material to an H2Se gas during the construction of a photovoltaic cell and allows more uniform melting during film annealing, more uniform intermixing of nanoparticles, and allows higher quality absorber films to be formed.

46. 发明授权

US07291782B2 Optoelectronic device and fabrication method 有权
公开(公告)号：US07291782B2
公开(公告)日：2007-11-06
申请号：US10290119
申请日：2002-11-05
申请人： Brian M. Sager , Martin R. Roscheisen , Klaus Petritsch , Greg Smestad , Jacqueline Fidanza , Gregory A. Miller , Dong Yu
发明人： Brian M. Sager , Martin R. Roscheisen , Klaus Petritsch , Greg Smestad , Jacqueline Fidanza , Gregory A. Miller , Dong Yu
IPC分类号： H01L31/0352
CPC分类号： H01L51/4226 , H01L51/0034 , H01L51/0035 , H01L51/0036 , H01L51/0038 , H01L51/0052 , H01L51/0053 , H01L51/0064 , H01L51/0078 , H01L51/4253 , Y02E10/549 , Y02P70/521
摘要： Charge-splitting networks, optoelectronic devices, methods for making optoelectronic devices, power generation systems utilizing such devices and method for making charge-splitting networks are disclosed. An optoelectronic device may include a porous nano-architected (e.g., surfactant-templated) film having interconnected pores that are accessible from both the underlying and overlying layers. A pore-filling material substantially fills the pores. The interconnected pores have diameters of about 1-100 nm and are distributed in a substantially uniform fashion with neighboring pores separated by a distance of about 1-100 nm. The nano-architected porous film and the pore-filling, material have complementary charge-transfer properties with respect to each other, i.e., one is an electron-acceptor and the other is a hole-acceptor. The nano-architected porous, film may be formed on a substrate by a surfactant temptation technique such as evaporation-induced self-assembly. A solar power generation system may include an array of such optoelectronic devices in the form of photovoltaic cells with one or more cells in the array having one or more porous charge-splitting networks disposed between an electron-accepting electrode and a hole-accepting electrode.

47. 发明授权

US07227066B1 Polycrystalline optoelectronic devices based on templating technique 有权
标题翻译：基于模板技术的多晶光电器件
公开(公告)号：US07227066B1
公开(公告)日：2007-06-05
申请号：US10829928
申请日：2004-04-21
申请人： Martin R. Roscheisen , Brian M. Sager
发明人： Martin R. Roscheisen , Brian M. Sager
IPC分类号： C30B23/00 , H01L31/00 , H01L29/08 , H01L21/00
CPC分类号： H01L31/0368 , H01L31/0296 , H01L31/0322 , H01L31/06 , H01L31/1824 , Y02E10/541 , Y02E10/545 , Y02P70/521 , Y10S977/742 , Y10S977/948
摘要： Methods for passivating crystalline grains in an active layer for an optoelectronic device and optoelectronic devices having active layers with passivated crystalline grains are disclosed. Crystalline grains of an active layer material and/or window layer material are formed within the nanotubes of an insulating nanotube template. The dimensions of the nanotubes correspond to the dimensions of a crystalline grain formed by the deposition technique used to form the grains. A majority of the surface area of these grains is in contact with the wall of the nanotube template rather than with other grains.
摘要翻译：公开了用于光电子器件的有源层钝化晶粒的方法和具有钝化晶粒的有源层的光电器件。在绝缘纳米管模板的纳米管内形成有源层材料和/或窗层材料的晶粒。纳米管的尺寸对应于通过用于形成晶粒的沉积技术形成的晶粒的尺寸。这些颗粒的大部分表面积与纳米管模板的壁接触而不是与其它颗粒接触。

48. 发明授权

US08969717B2 Thermoelectric stack coating for improved solar panel function 有权
标题翻译：用于改善太阳能电池板功能的热电叠层涂层
公开(公告)号：US08969717B2
公开(公告)日：2015-03-03
申请号：US13209360
申请日：2011-08-12
申请人： Brian M. Sager
发明人： Brian M. Sager
IPC分类号： H01L31/00 , H02N10/00 , H02S10/10 , H02N1/04
CPC分类号： H02S10/10 , H02N10/00 , Y02E10/50
摘要： Methods and devices for increase power output from solar devices. In one embodiment, the technique enables the front hot solar panel surface to be cooled by attachment of a thermoelectric multilayer stack to the back solar panel surface. The thermoelectric stack cools the solar panel front surface by drawing heat from the front to the back of the panel. That heat is transformed into mechanical vibrations using an inverse Peltier effect and that mechanical energy then transformed into electrical energy using a piezoelectric effect. Power output is first increased by lower operating temperature on front, resulting in a higher power conversion efficiency for the photovoltaic effect taking place in the CIGS/CdS active layers or other thin films, then from an additional power output from secondary electrical energy created from mechanical arising from the temperature-gradient driven occurrence of the thermoelectric effect.
摘要翻译：用于增加太阳能设备功率输出的方法和装置。在一个实施例中，该技术使得能够通过将热电多层堆叠附接到后太阳能电池板表面来冷却前部热太阳能电池板表面。热电叠层通过从面板的前面到后面的热量来冷却太阳能电池板前表面。使用反珀珀尔效应将热转化为机械振动，然后使用压电效应将机械能转化为电能。功率输出首先由前面的较低工作温度升高，导致在CIGS / CdS有源层或其他薄膜中发生的光电效应的更高的功率转换效率，然后来自从机械产生的次级电能的附加功率输出由温度梯度驱动发生的热电效应引起。

49. 发明授权

US08722160B2 Inorganic/organic hybrid nanolaminate barrier film 有权
标题翻译：无机/有机杂化纳米酸盐屏障膜
公开(公告)号：US08722160B2
公开(公告)日：2014-05-13
申请号：US10698988
申请日：2003-10-31
申请人： Brian M. Sager , Martin R. Roscheisen
发明人： Brian M. Sager , Martin R. Roscheisen
IPC分类号： B32B1/02 , B32B23/00
CPC分类号： B05D7/56 , B05D1/005 , B05D1/02 , B05D1/18 , B05D1/30 , B05D3/0254 , B05D5/083 , B82Y30/00 , H01L51/5256 , Y10T428/13 , Y10T428/1303 , Y10T428/1352 , Y10T428/1359 , Y10T428/139 , Y10T428/265 , Y10T428/2991 , Y10T428/2998
摘要： An inorganic/organic hybrid nanolaminate barrier film has a plurality of layers of an inorganic material that alternate with a plurality of layers of an organic material. Such a barrier film can be fabricated using nanocomposite self-assembly techniques based on sol-gel chemistry.
摘要翻译：无机/有机杂化的纳米酸盐阻隔膜具有与多层有机材料交替的多层无机材料。可以使用基于溶胶 - 凝胶化学的纳米复合自组装技术来制造这种阻挡膜。

50. 发明申请

US20130011958A1 PHOTOVOLTAIC DEVICES FABRICATED FROM NANOSTRUCTURED TEMPLATE 审中-公开
标题翻译：由纳米结构的模板制成的光电器件
公开(公告)号：US20130011958A1
公开(公告)日：2013-01-10
申请号：US13347023
申请日：2012-01-10
申请人： Martin R. Roscheisen , Brian M. Sager , Karl Pichler
发明人： Martin R. Roscheisen , Brian M. Sager , Karl Pichler
IPC分类号： H01L31/20
CPC分类号： B82Y10/00 , B82Y30/00 , H01L31/0352 , H01L31/03529 , H01L51/0036 , H01L51/0037 , H01L51/0038 , H01L51/0039 , H01L51/0047 , H01L51/0051 , H01L51/0052 , H01L51/0062 , H01L51/0064 , H01L51/0078 , H01L51/0094 , H01L51/4213 , H01L51/422 , H01L51/4226 , H01L51/4233 , H01L51/4253 , H01L51/447 , Y02E10/549 , Y02P70/521
摘要： Photovoltaic devices, such as solar cells, and methods for their manufacture are disclosed. A device may be characterized by an architecture having a nanostructured template made from an n-type first charge transfer material with template elements between about 1 nm and about 500 nm in diameter with about 1012 to 1016 elements/m2. A p-type second charge-transfer material optionally coats the walls of the template elements leaving behind additional space. A p-type third charge-transfer material fills the additional space volumetrically interdigitating with the second charge transfer material.
摘要翻译：公开了太阳能电池等光伏器件及其制造方法。器件的特征在于具有由n型第一电荷转移材料制成的纳米结构化模板的结构，其中模板元素的直径在约1nm至约500nm之间，具有约1012至1016个元素/ m 2。 p型第二电荷转移材料任选地涂覆模板元件的壁，留下额外的空间。 p型第三电荷转移材料填充与第二电荷转移材料体积相互交错的附加空间。

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