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    • 41. 发明申请
    • Read sensors of the CPP type having nitrogenated hard bias layers and method of making the same
    • 读取具有氮化硬偏置层的CPP型的传感器及其制造方法
    • US20070253123A1
    • 2007-11-01
    • US11784733
    • 2007-04-09
    • James FreitagMustafa Pinarbasi
    • James FreitagMustafa Pinarbasi
    • G11B5/127
    • G11B5/3932G11B5/3163G11B5/3909G11B2005/3996
    • A read sensor of the current-perpendicular-to-the-planes (CPP) type includes a sensor stack structure formed in a central region between first and second shield layers which serve as leads for the read sensor; insulator layers formed in side regions adjacent the central region; seed layer structures formed over the insulator layers in the side regions; and hard bias layers formed over the seed layer structures in the side regions. The hard bias layers are made of a nitrogenated cobalt-based alloy, such as nitrogenated cobalt-platinum (CoPt). Suitable if not exemplary coercivity and squareness properties are exhibited using the nitrogenated cobalt-based alloy. The hard bias layers may be formed by performing an ion beam deposition of cobalt-based materials using a sputtering gas (e.g. xenon) and nitrogen as a reactive gas.
    • 电流垂直平面(CPP)类型的读取传感器包括形成在用作读取传感器的引线的第一和第二屏蔽层之间的中心区域中的传感器堆叠结构; 形成在邻近中心区域的侧面区域中的绝缘体层; 种子层结构形成在侧面区域上的绝缘体层上; 以及在侧面区域上形成在种子层结构上的硬偏压层。 硬偏压层由氮化钴基合金如氮化钴 - 铂(CoPt)制成。 使用含氮钴基合金表现出适当的矫顽力和矩形特性。 可以通过使用溅射气体(例如氙)和氮作为反应气体进行钴基材料的离子束沉积来形成硬偏置层。
    • 42. 发明申请
    • Oblique angle etched underlayers for improved exchange biased structures in a magnetoresitive sensor
    • 斜角蚀刻底层,用于改进磁阻传感器中的交换偏置结构
    • US20070109692A1
    • 2007-05-17
    • US11283033
    • 2005-11-17
    • Matthew CareyJeffrey ChildressJames FreitagStefan MaatMustafa Pinarbasi
    • Matthew CareyJeffrey ChildressJames FreitagStefan MaatMustafa Pinarbasi
    • G11B5/127
    • G11B5/3909B82Y10/00B82Y25/00G01R33/093G11B5/3932G11B2005/3996
    • A magnetoresistive sensor having improved pinning field strength. The sensor includes a pinned layer structure pinned by exchange coupling with an antiferromagnetic (AFM) layer. The AFM layer is constructed upon an under layer having treated surface with an anisotropic roughness. The anisotropic roughness, produced by an angled ion etch, results in improved pinning strength. The underlayer may include a seed layer and a thin layer of crystalline material such as PtMn formed over the seed layer. The magnetic layer may include a first sub-layer of NiFeCr and a second sub-layer of NiFe formed there over. The present invention also includes a magnetoresistive sensor having a magnetic layer deposited on an underlayer (such as a non-magnetic spacer) having a surface treated with an anisotropic texture. An AFM layer is then deposited over the magnetic layer. The magnetic layer is then strongly pinned by a combination of exchange coupling with the AFM layer and a strong anisotropy provided by the surface texture of the underlayer. Such a structure can be used for example in a sensor having a pinned layer structure formed above the free layer, or in a sensor having an in stack bias structure.
    • 具有改善的钉扎场强的磁阻传感器。 传感器包括通过与反铁磁(AFM)层的交换耦合固定的钉扎层结构。 AFM层被构造在具有各向异性粗糙度的处理表面的底层上。 通过角度离子蚀刻产生的各向异性粗糙度导致改善的钉扎强度。 底层可以包括种子层和在种子层上形成的诸如PtMn的薄层结晶材料。 磁性层可以包括NiFeCr的第一子层和在其上形成的NiFe的第二子层。 本发明还包括具有沉积在具有用各向异性纹理处理的表面的底层(例如非磁性间隔物)上的磁性层的磁阻传感器。 然后将AFM层沉积在磁性层上。 然后通过与AFM层的交换耦合的组合强烈地钉住磁性层,并且由底层的表面纹理提供强烈的各向异性。 这种结构可以用于例如具有形成在自由层上方的钉扎层结构的传感器中,或者在具有堆叠偏压结构的传感器中。