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41. 发明申请

US20070045655A1 Nitride semiconductor light emitting device 审中-公开
标题翻译：氮化物半导体发光器件
公开(公告)号：US20070045655A1
公开(公告)日：2007-03-01
申请号：US11508145
申请日：2006-08-23
申请人： Keun Song , Dong Lee , Sun Kim , Je Kim
发明人： Keun Song , Dong Lee , Sun Kim , Je Kim
IPC分类号： H01L29/00
CPC分类号： H01L33/32 , H01L33/04 , H01L33/14 , H01S5/305 , H01S5/3215 , H01S5/3216 , H01S5/32341
摘要： The invention relates to a high-output, high-efficiency nitride semiconductor light emitting device with low operating voltage and high resistance to electrostatic discharge. The nitride semiconductor light emitting device includes an n-contact layer formed on a substrate and a current spreading layer formed on the n-contact layer. The nitride semiconductor light emitting device also includes an active layer formed on the current spreading layer and a p-clad layer formed on the active layer. The current spreading layer comprises at least three multiple layers composed of at least one first nitride semiconductor layer made of InxGa(1−x)N, where 0
摘要翻译：本发明涉及一种具有低工作电压和高静电放电性的高输出，高效氮化物半导体发光器件。氮化物半导体发光器件包括形成在衬底上的n接触层和形成在n接触层上的电流扩散层。氮化物半导体发光器件还包括形成在电流扩散层上的有源层和形成在有源层上的p覆盖层。电流扩展层包括由至少一个由In x Ga（1-x）N制成的至少一个第一氮化物半导体层组成的至少三个多层，其中0

42. 发明申请

US20060211607A1 Somatostatin-dopamine chimeric analogs 有权
标题翻译：生长抑素 - 多巴胺嵌合类似物
公开(公告)号：US20060211607A1
公开(公告)日：2006-09-21
申请号：US11434273
申请日：2006-05-15
申请人： Michael Culler , Zheng Dong , Sun Kim , Jacques-Pierre Moreau
发明人： Michael Culler , Zheng Dong , Sun Kim , Jacques-Pierre Moreau
IPC分类号： A61K38/31 , C07K14/655
CPC分类号： C07D471/04 , A61K38/00 , C07D471/06 , C07K14/6555
摘要： Disclosed is a series of somatostatin-dopamine chimeric analogs which retain both somatostatin and dopamine activity in vivo. An example is: 6-n-propyl-8β-ergolinglmethylthioacetyl-D-Phe-c(Cys-Tyr-D-Trp-Lys-Abu-Cys)-Thr-NH2
摘要翻译：公开了一系列在体内保持生长抑素和多巴胺活性的生长抑素 - 多巴胺嵌合类似物。一个例子是：6-正丙基-8β-麦角酰甲基硫代乙酰基-D-Phe-c（Cys-Tyr-D-Trp-Lys-Abu-Cys）-Thr-NH 2

43. 发明申请

US20060158716A1 Apparatus and method for realizing all-optical nor logic device using gain saturation characteristics of a semiconductor optical amplifier 失效
标题翻译：使用半导体光放大器的增益饱和特性实现全光或逻辑器件的装置和方法
公开(公告)号：US20060158716A1
公开(公告)日：2006-07-20
申请号：US11039692
申请日：2005-01-20
申请人： Young Byun , Jae Kim , Young Jhon , Seok Lee , Deok Woo , Sun Kim , Jong Yi
发明人： Young Byun , Jae Kim , Young Jhon , Seok Lee , Deok Woo , Sun Kim , Jong Yi
IPC分类号： H01S3/00
CPC分类号： H01S5/50 , G02F1/3515 , G02F3/00 , G02F2203/70 , H01S5/509
摘要： The present invention relates to an apparatus and a method for realizing all-optical NOR logic device using the gain saturation characteristics of a semiconductor optical amplifier (SOA). More particularly, the invention relates to a 10 Gbit/s all-optical NOR logic device among all-optical logic devices, in which a signal transmitted from a given point of an optical circuit such as an optical computing circuit is used as a pump signal and a probe signal. The method for realizing an all-optical NOR logic device using the gain saturation characteristics of the SOA according to the present invention comprises the steps of: utilizing A+B signal which couples together an input signal pattern A (1100) and an input signal pattern B (0110) as a pump signal (1110); utilizing a probe signal (1111) by generating a clock signal out of said input signal pattern A (1100); and obtaining a Boolean equation {overscore (A+B)} by making said probe signal and said pump signal incident upon the SOA simultaneously from the opposite direction. The all-optical logic device according to the present invention has a simple construction since it is realized through the XGM (Cross Gain Modulation) method which utilizes the gain saturation characteristics. Also, it is expected that the method employed in the present invention could be used for realizing other all-optical logic circuits and devices. Key Words 10 Gbit/s, All-optical NOR logic device (10 Gbit/s All-optical NOR logic device), Semiconductor Optical Amplifiers, Gain Saturation
摘要翻译：本发明涉及使用半导体光放大器（SOA）的增益饱和特性实现全光NOR逻辑器件的装置和方法。更具体地说，本发明涉及全光逻辑器件中的10Gbit / s全光NOR逻辑器件，其中从诸如光计算电路的光电路的给定点发送的信号用作泵信号和探测信号。使用根据本发明的SOA的增益饱和特性来实现全光NOR逻辑器件的方法包括以下步骤：利用将输入信号模式A（1100）和输入信号模式（1100）耦合在一起的A + B信号 B（0110）作为泵浦信号（1110）; 通过从所述输入信号模式A（1100）产生时钟信号来利用探测信号（1111）; 并通过使所述探针信号和所述泵浦信号从相反方向同时入射到SOA上而获得布尔方程（A + B）。根据本发明的全光逻辑器件具有简单的结构，因为它通过利用增益饱和特性的XGM（交叉增益调制）方法，预计本发明采用的方法可用于实现其他全光逻辑电路和器件。关键词10 Gbit / s，全部 - 光学NOR逻辑器件（10 Gbit / s全光NOR逻辑器件），半导体光放大器，增益饱和度

44. 发明申请

US20060086932A1 Nitride based semiconductor device 有权
标题翻译：氮化物基半导体器件
公开(公告)号：US20060086932A1
公开(公告)日：2006-04-27
申请号：US11098278
申请日：2005-04-04
申请人： Sun Kim , Dong Cho , Je Kim , Kyu Lee , Jeong Oh , Dong Kim
发明人： Sun Kim , Dong Cho , Je Kim , Kyu Lee , Jeong Oh , Dong Kim
IPC分类号： H01L29/06
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/0213 , H01S5/3216 , H01S5/34333 , H01S2304/12
摘要： The present invention provides a nitride based semiconductor device comprising an active layer having a quantum well layer and a quantum barrier layer, wherein the device includes an electron emitting layer formed of at least two repeats of a first nitride semiconductor layer and a second nitride semiconductor layer having different compositions between a n-type nitride semiconductor layer and the active layer, the first nitride semiconductor layer has an energy band gap greater than that of the quantum well layer, smaller than that of the quantum barrier layer, and decreasing closer to the active layer, and the second nitride semiconductor layer has an energy band gap at least higher than that of the adjacent first nitride semiconductor layer(s) and has a thickness capable of tunneling electrons.
摘要翻译：本发明提供了一种氮化物基半导体器件，其包括具有量子阱层和量子势垒层的有源层，其中该器件包括由至少两个重复的第一氮化物半导体层和第二氮化物半导体层形成的电子发射层在n型氮化物半导体层和有源层之间具有不同的组成，第一氮化物半导体层的能带隙大于量子阱层的能带隙，小于量子势垒层的能带隙，并且更接近于活性层层，并且第二氮化物半导体层具有至少比相邻的第一氮化物半导体层的能带隙高的能带隙，并且具有能够隧穿电子的厚度。

45. 发明申请

US20060006407A1 Nitride semiconductor device and method of manufacturing the same 有权
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US20060006407A1
公开(公告)日：2006-01-12
申请号：US11052103
申请日：2005-02-08
申请人： Je Kim , Sun Kim , Dong Kim
发明人： Je Kim , Sun Kim , Dong Kim
IPC分类号： H01L29/24
CPC分类号： H01L33/14 , H01L33/20 , H01L33/32 , Y10S438/962 , Y10S438/964
摘要： The present invention provides a nitride semiconductor device. The nitride semiconductor device comprises an n-type nitride semiconductor layer formed on a nitride crystal growth substrate. An active layer is formed on the n-type nitride semiconductor layer. A first p-type nitride semiconductor layer is formed on the active layer. A micro-structured current diffusion pattern is formed on the first p-type nitride semiconductor layer. The current diffusion pattern is made of an insulation material. A second p-type nitride semiconductor layer is formed on the first p-type nitride semiconductor layer having the current diffusion pattern formed thereon.
摘要翻译：本发明提供一种氮化物半导体器件。氮化物半导体器件包括形成在氮化物晶体生长衬底上的n型氮化物半导体层。在n型氮化物半导体层上形成有源层。在有源层上形成第一p型氮化物半导体层。在第一p型氮化物半导体层上形成微结构化的电流扩散图案。电流扩散图案由绝缘材料制成。在其上形成有电流扩散图案的第一p型氮化物半导体层上形成第二p型氮化物半导体层。

46. 发明申请

US20050224816A1 Nitride based semiconductor having improved external quantum efficiency and fabrication method thereof 审中-公开
标题翻译：具有改进的外部量子效率的氮化物基半导体及其制造方法
公开(公告)号：US20050224816A1
公开(公告)日：2005-10-13
申请号：US10873239
申请日：2004-06-23
申请人： Sun Kim , Jeong Oh , Kyu Lee , Je Kim
发明人： Sun Kim , Jeong Oh , Kyu Lee , Je Kim
IPC分类号： H01L27/15 , H01L33/22 , H01L33/32
CPC分类号： H01L33/32 , H01L33/22
摘要： A surface treated nitride semiconductor in use for a light emitting diode, in which an n-cladding layer is formed on a substrate. An active layer having a multiple quantum well structure is formed on the n-cladding layer. A p-cladding layer is formed on the active layer. A p-capping layer is formed on the p-cladding layer in a low temperature range in which single crystal growth does not take place. The p-capping layer has a nanoscale roughened structure formed in an upper surface thereof via heat treatment in a high temperature range in which at least partial crystallization takes place. The nanoscale roughened structure reduces total internal reflection of the nitride semiconductor thereby improving external quantum efficiency thereof.
摘要翻译：用于发光二极管的表面处理氮化物半导体，其中在基板上形成n包层。在n包层上形成具有多量子阱结构的有源层。在活性层上形成p-p层。 p型覆盖层在不发生单晶生长的低温范围内形成在p型覆层上。 p覆盖层具有通过在至少发生部分结晶的高温范围内的热处理而在其上表面形成的纳米级粗糙结构。纳米级粗糙结构减少氮化物半导体的全内反射，从而提高其外部量子效率。

47. 发明申请

US20050210926A1 Control panel assembly for washing machine 有权
标题翻译：洗衣机控制面板组件
公开(公告)号：US20050210926A1
公开(公告)日：2005-09-29
申请号：US11034826
申请日：2005-01-14
申请人： Ik Kwon , Sun Kim
发明人： Ik Kwon , Sun Kim
IPC分类号： D06F39/00 , D06F39/12
CPC分类号： D06F39/005 , D06F39/12
摘要： A control panel assembly for a washing machine is provided. The control panel assembly is installed at a case of the washing machine so that a user can handle the washing machine. The control panel assembly includes a circuit board, a cover and a member. The circuit board includes a given area having one or more displays densely attached thereon. The cover is attached on a case of the washing machine so as to cover the circuit board, and includes one window for showing all of the displays. The member is configured to be detachable from the window to thereby divide the window into several areas. The control panel assembly may further include a member attached on the window to thereby divide the window into several areas or cover boundaries between the displays.
摘要翻译：提供了一种用于洗衣机的控制面板组件。控制面板组件安装在洗衣机的壳体上，使得用户可以处理洗衣机。控制面板组件包括电路板，盖和构件。电路板包括具有密集地附着在其上的一个或多个显示器的给定区域。盖子安装在洗衣机的外壳上以覆盖电路板，并且包括一个用于显示所有显示器的窗口。构件被构造成可从窗口拆卸，从而将窗户分成几个区域。控制面板组件还可以包括附接在窗户上的构件，从而将窗户划分成几个区域或覆盖显示器之间的边界。

48. 发明申请

US20050026827A1 Octapeptide bombesin analogs 审中-公开
标题翻译：八肽铃蟾肽类似物
公开(公告)号：US20050026827A1
公开(公告)日：2005-02-03
申请号：US10788563
申请日：2004-02-27
申请人： David Coy , Jacques-Pierre Moreau , Sun Kim
发明人： David Coy , Jacques-Pierre Moreau , Sun Kim
IPC分类号： A61K38/00 , C07K7/02 , C07K7/08 , C07K7/18 , C07K14/575 , C07K14/685 , A61K38/17
CPC分类号： C07K7/086 , A61K38/00 , C07K7/02 , C07K7/18 , C07K14/57572 , C07K14/685
摘要： A linear (i.e., non-cyclic) analog of biologically active amphibian bombesin, mammalian gastrin-releasing peptide (GRP), or mammalian growth hormone releasing factor (GRF), having an active site and a binding site responsible for the binding of the peptide to a receptor on a target cell. Cleavage of a peptide bond in the active site of naturally occurring bombesin, GRP, or GRF is unnecessary for in vivo biological activity. The analog has one of the following modifications: (a) a deletion of an amino acid residue within the active site and a modification of an amino acid residue outside of the active site, (b) a replacement of two amino acid residues within the active site with a synthetic amino acid, a β-amino acid, or a γ-amino acid residue, or (c) a non-peptide bond. instead of a peptide bond between an amino acid residue of the active site and an adjacent amino acid residue.
摘要翻译：具有活性位点和负责肽结合的结合位点的生物活性水陆两栖铃蟾肽，哺乳动物胃泌素释放肽（GRP）或哺乳动物生长激素释放因子（GRF）的线性（即非循环）类似物到目标细胞上的受体。在天然存在的铃蟾肽，GRP或GRF的活性位点中肽键的切割对于体内生物活性是不必要的。类似物具有以下修饰之一：（a）活性位点内的氨基酸残基的缺失和活性位点之外的氨基酸残基的修饰，（b）在活性位点内置换两个氨基酸残基具有合成氨基酸，β-氨基酸或γ-氨基酸残基的位点，或（c）非肽键。而不是活性位点的氨基酸残基与相邻氨基酸残基之间的肽键。

49. 发明申请

US20130024878A1 SPINDLE MOTOR 审中-公开
标题翻译：主轴电机
公开(公告)号：US20130024878A1
公开(公告)日：2013-01-24
申请号：US13299516
申请日：2011-11-18
申请人： Yong Kwan Lee , Sun Kim , Dae Hyun Kwon , Hyun Su Kim
发明人： Yong Kwan Lee , Sun Kim , Dae Hyun Kwon , Hyun Su Kim
IPC分类号： G11B17/03
CPC分类号： G11B19/2009
摘要： Disclosed herein is a spindle motor including: a turn table made of a deformable iron based material; a turn table inner diameter part provided at the center of the turn table, having a hollow part, and including a coupling part formed in an inner peripheral surface thereof; and a shaft inserted into the hollow part of the turn table inner diameter part to thereby contact the coupling part and rotate in an axial direction.
摘要翻译：本文公开了一种主轴电动机，包括：由可变形铁基材料制成的转台; 转台内径部分设置在转台的中心，具有中空部分，并且包括形成在其内周表面中的联接部分; 以及插入转台内径部分的中空部分中的轴，从而接触联接部并沿轴向旋转。

50. 发明申请

US20080001138A1 NITRIDE BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：基于氮化物的半导体发光器件
公开(公告)号：US20080001138A1
公开(公告)日：2008-01-03
申请号：US11380415
申请日：2006-04-26
申请人： Je Kim , Jeong Oh , Dong Kim , Sun Kim , Jin Park , Kyu Lee
发明人： Je Kim , Jeong Oh , Dong Kim , Sun Kim , Jin Park , Kyu Lee
IPC分类号： H01L33/00
CPC分类号： H01L33/04 , B82Y20/00 , H01L33/06 , H01L33/32
摘要： Disclosed herein is a nitride-based semiconductor light-emitting device. The nitride-based semiconductor light-emitting device comprises an n-type clad layer made of n-type Alx1Iny1Ga(1-x1-y1)N (where 0≦x1≦1, 0≦y1≦1, and 0≦x1+y1≦1), a multiple quantum well-structured active layer made of undoped InAGa1-AN (where 0
摘要翻译：本文公开了一种氮化物基半导体发光器件。氮化物系半导体发光元件包括由n型Al x In 1（1-x1-y1）构成的n型覆盖层， N（其中0 <= X 1 <= 1，0 <= Y 1 <= 1，AND 0 <= X 1 1-y2 N（其中0 <= Y2-2 <1）和由p型Al < （1-x3-y3）N（其中0

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