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    • 42. 发明授权
    • Washer nozzle and washer apparatus
    • 洗衣机喷嘴和洗衣机设备
    • US07111793B2
    • 2006-09-26
    • US10478700
    • 2003-03-27
    • Akira MaruyamaKeisuke Kanazawa
    • Akira MaruyamaKeisuke Kanazawa
    • B05B1/10B05B1/14B05B1/08B60S1/46A62C31/02
    • B05B1/042B05B1/08B05B15/654B60S1/50B60S1/52
    • A washer nozzle includes a spread jet opening for basically jetting washer fluid in a predetermined direction of a vehicle; and a jet opening for accessorily and intensively jetting part of the washer fluid as a directional jet flow which is different from the spread flow basically jetted from the spread jet opening. The washer fluid is jetted and sprayed over a large area in a fan-shaped spread flow from the spread jet opening. Further, the washer fluid is intensively sprayed as the directional jet flow from the jet opening. Thus, sweeping performance of the washer nozzle and a washer apparatus is improved such that the directional jet flow is not substantially affected by airflow during high-speed driving so that the washer fluid is effectively utilized so as to be sprayed and supplied to areas that are prone to be left unwashed.
    • 洗衣机喷嘴包括用于基本上沿车辆的预定方向喷射洗涤剂流体的扩展喷射开口; 以及用于附着和集中地喷射洗涤液的一部分的喷射开口,作为与从扩展喷射口基本上喷射的扩散流不同的定向喷射流。 将洗涤液喷射并喷洒在来自扩散射流开口的扇形扩散流的大面积上。 另外,作为来自喷射口的定向喷射流,集中喷射洗涤液。 因此,洗涤器喷嘴和洗衣机装置的清扫性能得到改善,使得在高速驱动期间方向射流基本上不受气流的影响,从而有效地利用洗涤液,以便喷射和供应到 容易被遗弃。
    • 45. 发明授权
    • Absorption cooling apparatus
    • 吸收式冷却装置
    • US06202436B1
    • 2001-03-20
    • US09351289
    • 1999-07-12
    • Katsusuke IshiguroAkira MaruyamaHiroshi Kamiya
    • Katsusuke IshiguroAkira MaruyamaHiroshi Kamiya
    • F25B1500
    • F25B37/00F25B15/008F25B39/026Y02A30/277Y02B30/62
    • Dual pipe unit 40 is erected vertically and comprises cold water pipe 41 serving as a passageway of cold water and surrounded by coaxial outer pipe 42. The cold water pipe consists of evaporating pipe portion 41a sealed at the bottom and inner pipe portion 41b coaxially provided in its interior. The bottom of the inner pipe portion is open near the bottom of the evaporating pipe portion whereas its top penetrating the top of the evaporating pipe portion to project into the latter is fixed thereto in a liquid-tight manner. The cold water pipe penetrates the top of the outer pipe but it is fixed to the latter in a liquid-tight manner, with its bottom end being spaced from the bottom end of the outer pipe by a specified distance. Evaporating/absorbing compartment 43 is formed between the evaporating pipe and the outer pipe. The channel of cold water through the evaporating pipe portion is narrowed and the cold water collects toward its wall surface, flowing at an increased relative velocity. This contributes to enhance the efficiency of cooling the cold water.
    • 双管单元40垂直竖立并且包括用作冷水通道并被同轴外管42包围的冷水管41.冷水管由在底部密封的蒸发管部分41a和同轴地设置在其中的内管部分41b组成 它的内部。 内管部分的底部在蒸发管部分的底部附近打开,而其顶部蒸发管部分的顶部突入其中的顶部以液密方式固定在其上。 冷水管穿透外管的顶部,但是以液密方式固定在其上,其底端与外管的底端间隔一定距离。 在蒸发管和外管之间形成蒸发吸收室43。 通过蒸发管部分的冷水通道变窄,冷水向其壁表面收集,以增加的相对速度流动。 这有助于提高冷水冷却的效率。
    • 46. 发明授权
    • Semiconductor memory device, semiconductor device, and electronic apparatus using the semiconductor device
    • 半导体存储器件,半导体器件和使用该半导体器件的电子设备
    • US06178121B1
    • 2001-01-23
    • US09367053
    • 1999-09-28
    • Akira Maruyama
    • Akira Maruyama
    • G11C700
    • G11C11/4074
    • A memory cell (1) with a MOS transistor (5) and a data-storing capacitor (7). One of two input/output electrodes of the MOS transistor (5) is connected to a bit line (36) and a gate electrode is connected to a word line (38). A first electrode (6) of the data-storing capacitor (7) is connected to the other input/output electrode of the MOS transistor (5) and a second electrode (14) is connected to a potential control circuit (40). When the data stored in the memory cell (1) is “HIGH”, the potential control circuit (40) changes the potential of the second electrode (14) of the data-storing capacitor (7) from a precharge potential VCC/2 to a ground potential GND after data-writing and data-readout operations are completed. When the data stored in the memory cell (1) is “LOW”, the potential control circuit (40) changes the potential of the second electrode (14) of the data-storing capacitor (7) from the precharge potential VCC/2 to a power potential VCC after data-writing and data-readout operations are completed.
    • 具有MOS晶体管(5)和数据存储电容器(7)的存储单元(1)。 MOS晶体管(5)的两个输入/输出电极之一连接到位线(36),栅电极连接到字线(38)。 数据存储电容器(7)的第一电极(6)连接到MOS晶体管(5)的另一输入/输出电极,第二电极(14)连接到电位控制电路(40)。 当存储在存储单元(1)中的数据为“高”时,电位控制电路(40)将数据存储电容器(7)的第二电极(14)的电位从预充电电位VCC / 2变为 数据写入和数据读出操作完成后的地电位GND。 当存储在存储单元(1)中的数据为“低”时,电位控制电路(40)将数据存储电容器(7)的第二电极(14)的电位从预充电电位VCC / 2变为 数据写入和数据读出操作后的电源电位VCC完成。
    • 48. 发明授权
    • Data replacement system using high-speed clock for initialization
    • 数据替换系统采用高速时钟进行初始化
    • US5696886A
    • 1997-12-09
    • US693803
    • 1996-08-01
    • Akira MaruyamaHiroichi Nara
    • Akira MaruyamaHiroichi Nara
    • G06F1/24G06F13/00G06F15/177G06F1/08
    • G06F15/177
    • A data replacing unit replaces a data packet among a plurality of predetermined data packets in the data replacement manner, which manner is provided by a first control unit as is necessary. An initializing unit generates initializing data using a high-speed clock, clock speed of which is higher than that used by the first control unit, the initializing data being used for initializing the data replacing unit so as to refresh the replacing unit before the data replacement operation is started. A selecting unit, initially and until the initialization is completed, selects data so that the initializing data is provided to the data replacing unit but the control data is not provided thereto.
    • 数据替换单元以数据替换方式替换多个预定数据分组中的数据分组,根据需要由第一控制单元提供哪种方式。 初始化单元使用其时钟速度高于第一控制单元使用的高速时钟来生成初始化数据,初始化数据用于初始化数据替换单元,以便在数据替换之前刷新替换单元 操作开始。 初始化并且直到初始化完成为止,选择单元选择数据,使得初始化数据被提供给数据替换单元,但不提供控制数据。