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    • 45. 发明申请
    • DRAM CONTROLLER FOR VARIABLE REFRESH OPERATION TIMING
    • DRAM控制器,用于不同的刷新操作时序
    • US20150347036A1
    • 2015-12-03
    • US14823094
    • 2015-08-11
    • International Business Machines Corporation
    • Hillery C. HunterKyu-hyoun KimJanani Mukundan
    • G06F3/06G11C11/4076G11C11/406
    • G06F3/0613G06F3/0653G06F3/0659G06F3/0673G06F13/1636G11C11/40607G11C11/40611G11C11/4076G11C2211/4061
    • A method for selection of a DRAM refresh timing in a DRAM memory system is disclosed. The method may include running a workload for a first number of refresh intervals using a first DRAM refresh timing and making a first workload throughput measurement for the first number of refresh intervals. The method may also include running the workload for a second number of refresh intervals using a second DRAM refresh timing and making a second workload throughput measurement for the second number of refresh intervals. The method may further include deciding if the first throughput measurement is greater than the second throughput measurement, and then selecting the first DRAM refresh timing as a selected DRAM refresh timing, or deciding if the second throughput measurement is greater than the first throughput measurement, then selecting the second DRAM refresh timing as the selected DRAM refresh timing.
    • 公开了一种在DRAM存储器系统中选择DRAM刷新定时的方法。 该方法可以包括使用第一DRAM刷新定时运行第一数量的刷新间隔的工作负载,并且对第一次刷新间隔进行第一工作负载吞吐量测量。 该方法还可以包括使用第二DRAM刷新定时对第二数量的刷新间隔运行工作负荷,并且对第二数量的刷新间隔进行第二工作负载吞吐量测量。 该方法还可以包括:决定第一吞吐量测量是否大于第二吞吐量测量,然后选择第一DRAM刷新定时作为所选DRAM刷新定时,或者决定第二吞吐量测量是否大于第一吞吐量测量值,则 选择第二DRAM刷新定时作为所选择的DRAM刷新定时。
    • 46. 发明授权
    • DRAM controller for variable refresh operation timing
    • DRAM控制器,用于可变刷新操作时序
    • US09196347B2
    • 2015-11-24
    • US13827691
    • 2013-03-14
    • International Business Machines Corporation
    • Hillery C. HunterKyu-hyoun KimJanani Mukundan
    • G11C11/406G06F13/16
    • G06F3/0613G06F3/0653G06F3/0659G06F3/0673G06F13/1636G11C11/40607G11C11/40611G11C11/4076G11C2211/4061
    • A method for selection of a DRAM refresh timing in a DRAM memory system is disclosed. The method may include running a workload for a first number of refresh intervals using a first DRAM refresh timing and making a first workload throughput measurement for the first number of refresh intervals. The method may also include running the workload for a second number of refresh intervals using a second DRAM refresh timing and making a second workload throughput measurement for the second number of refresh intervals. The method may further include deciding if the first throughput measurement is greater than the second throughput measurement, and then selecting the first DRAM refresh timing as a selected DRAM refresh timing, or deciding if the second throughput measurement is greater than the first throughput measurement, then selecting the second DRAM refresh timing as the selected DRAM refresh timing.
    • 公开了一种在DRAM存储器系统中选择DRAM刷新定时的方法。 该方法可以包括使用第一DRAM刷新定时运行第一数量的刷新间隔的工作负载,并且对第一次刷新间隔进行第一工作负载吞吐量测量。 该方法还可以包括使用第二DRAM刷新定时对第二数量的刷新间隔运行工作负荷,并且对第二数量的刷新间隔进行第二工作负载吞吐量测量。 该方法还可以包括:决定第一吞吐量测量是否大于第二吞吐量测量,然后选择第一DRAM刷新定时作为所选DRAM刷新定时,或者决定第二吞吐量测量是否大于第一吞吐量测量值,则 选择第二DRAM刷新定时作为所选择的DRAM刷新定时。
    • 49. 发明授权
    • Error-correcting code distribution for memory systems
    • 内存系统的错误纠正代码分配
    • US09189327B2
    • 2015-11-17
    • US14084043
    • 2013-11-19
    • International Business Machines Corporation
    • Paul W. CoteusHillery C. HunterCharles A. KilmerKyu-hyoun KimWarren E. MauleKenneth L. Wright
    • G11C29/00G06F11/10
    • G06F11/1008G06F11/1012G06F11/108G06F2211/109
    • According to one embodiment, a memory system includes a plurality of memory devices and a memory controller operatively coupled to the memory devices. The memory controller is configured to partition write data into a plurality of data blocks, where each data block is associated with one of the memory devices. The memory controller is further configured to generate an instance of a local error-correcting code (ECC) corresponding to each data block, and merge each data block with the corresponding instance of the local ECC to form an encoded data block for each memory device. Additionally, the memory controller is configured to write each encoded data block to the memory devices such that each memory device stores one of the data blocks with the corresponding instance of the local ECC. A global ECC and a local ECC of the global ECC can also be included in the memory system.
    • 根据一个实施例,存储器系统包括多个存储器件和可操作地耦合到存储器件的存储器控​​制器。 存储器控制器被配置为将写入数据分割成多个数据块,其中每个数据块与存储器件之一相关联。 存储器控制器还被配置为生成对应于每个数据块的本地纠错码(ECC)的实例,并且将每个数据块与本地ECC的对应实例合并,以形成每个存储器设备的编码数据块。 另外,存储器控制器被配置为将每个编码的数据块写入存储器件,使得每个存储器件将数据块中的一个与本地ECC的对应实例一起存储。 全局ECC的全局ECC和本地ECC也可以包含在内存系统中。