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41. 发明申请

WO2013119882A1 TRANSITION METAL OXIDE BILAYERS 审中-公开
标题翻译：过渡金属氧化物双层
公开(公告)号：WO2013119882A1
公开(公告)日：2013-08-15
申请号：PCT/US2013/025238
申请日：2013-02-07
申请人： INTERMOLECULAR, INC.
发明人： PHAM, Hieu , GOPAL, Vidyut , HASHIM, Imran , WANG, Yun , YANG, Hong Sheng
IPC分类号： H01L47/00
CPC分类号： H01L45/08 , H01L27/2409 , H01L27/2463 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/16 , H01L45/1616 , H01L45/1625 , H01L45/1641
摘要： Embodiments of the invention include nonvolatile memory elements and memory devices comprising the nonvolatile memory elements. Methods for forming the nonvolatile memory elements are also disclosed. The nonvolatile memory element comprises a first electrode layer, a second electrode layer, and a plurality of layers of an oxide disposed between the first and second electrode layers. One of the oxide layers has linear resistance and substoichiometric composition, and the other oxide layer has bistable resistance and near-stoichiometric composition. Preferably, the sum of the two oxide layer thicknesses is between about 20 and about 100, and the oxide layer with bistable resistance has a thickness between about 25% and about 75% of the total thickness. In one embodiment, the oxide layers are formed using reactive sputtering in an atmosphere with controlled flows of argon and oxygen.
摘要翻译：本发明的实施例包括非易失性存储器元件和包括非易失性存储元件的存储器件。还公开了形成非易失性存储元件的方法。非易失性存储元件包括第一电极层，第二电极层和设置在第一和第二电极层之间的多个氧化物层。氧化物层中的一个具有线性电阻和亚化学计量组成，另一个氧化物层具有双稳态电阻和近化学计量组成。优选地，两个氧化物层厚度的总和在约20和约100之间，并且具有双稳态电阻的氧化物层具有在总厚度的约25％至约75％之间的厚度。在一个实施例中，氧化物层在具有受控的氩气和氧气的气氛中使用反应溅射形成。

42. 发明申请

WO2013063617A1 METHOD FOR FORMING RESISTIVE SWITCHING MEMORY ELEMENTS WITH IMPROVED SWITCHING BEHAVIOR 审中-公开
标题翻译：形成具有改进的开关行为的电阻式开关元件的方法
公开(公告)号：WO2013063617A1
公开(公告)日：2013-05-02
申请号：PCT/US2012/063221
申请日：2012-11-02
申请人： INTERMOLECULAR, INC. , KABUSHIKI KAISHA TOSHIBA , SANDISK 3D LLC
发明人： WANG, Yun , CHIANG, Tony, P. , GOPAL, Vidyut , HASHIM, Imram , MINVIELLE, Tim , YAMAGUCHI, Takeshi
IPC分类号： H01L21/469
CPC分类号： H01L45/06 , H01L45/065 , H01L45/1233 , H01L45/146 , H01L45/1641
摘要： Methods for producing RRAM resistive switching elements having optimal switching behavior include crystalline phase structural changes. Structural changes indicative of optimal switching behavior include hafnium oxide phases in an interfacial region between a resistive switching layer and an electrode.
摘要翻译：具有最佳切换行为的RRAM电阻式开关元件的制造方法包括晶相结构变化。指示最佳切换行为的结构变化包括在电阻式开关层和电极之间的界面区域中的氧化铪相。

43. 发明申请

WO2016085665A1 ELECTRON BARRIER HEIGHT CONTROLLED INTERFACES OF RESISTIVE SWITCHING LAYERS IN RESISTIVE RANDOM ACCESS MEMORY CELLS 审中-公开
标题翻译：电阻式随机存取存储器电容栅极高度控制电阻开关层的界面
公开(公告)号：WO2016085665A1
公开(公告)日：2016-06-02
申请号：PCT/US2015/060368
申请日：2015-11-12
申请人： INTERMOLECULAR, INC.
发明人： WANG, Yun , NARDI, Federico
IPC分类号： H01L29/51
CPC分类号： H01L45/12 , H01L27/2463 , H01L27/2481 , H01L45/06 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/148 , H01L45/1608 , H01L45/1625
摘要： Provided are resistive switching memory cells and method of forming such cells. A memory cell includes a resistive switching layer disposed between two buffer layers. The electron barrier height of the material used for each buffer layer is less than the electron barrier height of the material used for the resistive switching layer. Furthermore, the thickness of each buffer layer may be less than the thickness of the resistive switching layer. The buffer layers reduce diffusion between the resistive switching layer and electrodes. Furthermore, the buffer layers improve data retention and prevent unintentional resistive switching when a reading signal is applied to the memory cell. The reading signal uses a low voltage and most of the electron tunneling is blocked by the buffer layers during this operation. On the other hand, the buffer layers allow electrode tunneling at higher voltages used for forming and switching signals.
摘要翻译：提供了电阻式开关存储单元和形成这种单元的方法。存储单元包括设置在两个缓冲层之间的电阻式开关层。用于每个缓冲层的材料的电子势垒高度小于用于电阻式开关层的材料的电子势垒高度。此外，每个缓冲层的厚度可以小于电阻式开关层的厚度。缓冲层减少电阻式开关层和电极之间的扩散。此外，当读取信号被施加到存储器单元时，缓冲层改善数据保持并防止无意的电阻性切换。读取信号使用低电压，并且在该操作期间大部分电子隧道被缓冲层阻挡。另一方面，缓冲层允许用于形成和切换信号的较高电压下的电极隧穿。

44. 发明申请

WO2015006104A1 ALL AROUND ELECTRODE FOR NOVEL 3D RRAM APPLICATIONS 审中-公开
标题翻译：用于新型3D RRAM应用的所有环绕电极
公开(公告)号：WO2015006104A1
公开(公告)日：2015-01-15
申请号：PCT/US2014/045111
申请日：2014-07-01
申请人： INTERMOLECULAR, INC.
发明人： NARDI, Federico , BARABASH, Sergey , WANG, Yun
IPC分类号： G11C13/02
CPC分类号： G11C13/004 , G11C13/0007 , G11C13/003 , G11C2213/52 , H01L45/08 , H01L45/1206 , H01L45/146 , H01L45/1675
摘要： A resistive switching memory device can include three or more electrodes interfacing a switching layer, including a top electrode, a bottom electrode, and a side electrode. The top and bottom electrodes can be used for forming conductive filaments and for reading the memory device. The side electrode can be used to control the resistance state of the switching layer.
摘要翻译：电阻式开关存储器件可以包括与包括顶电极，底电极和侧电极在内的开关层接口的三个或更多个电极。顶部和底部电极可用于形成导电细丝并用于读取存储器件。侧电极可用于控制开关层的电阻状态。

45. 发明申请

WO2013055951A1 SOL-GEL BASED ANTIREFLECTIVE COATINGS USING ALKYLTRIALKOXYSILANE BINDERS HAVING LOW REFRACTIVE INDEX AND HIGH DURABILITY 审中-公开
标题翻译：使用具有低折射率的碱金属氧化物粘合剂和高耐久性的基于溶胶凝胶的抗反射涂层
公开(公告)号：WO2013055951A1
公开(公告)日：2013-04-18
申请号：PCT/US2012/059801
申请日：2012-10-11
申请人： INTERMOLECULAR, INC.
发明人： KALYANKAR, Nikhil , LEWIS, Mark , LIANG, Liang , SUN, Zhi-wen , WANG, Yun
IPC分类号： B05D5/00
CPC分类号： C09D1/00 , C03C17/008 , C03C17/22 , C03C17/30 , C08K3/36 , C09D5/006 , C09D7/61 , C09D7/67 , G02B1/115
摘要： Methods and compositions for forming porous low refractive index coatings on substrates are provided. The method comprises coating a substrate with a sol-formulation comprising silica based nanoparticles and an alkyltrialkoxysilane based binder. Use of the alkyltrialkoxysilane based binder results in a porous low refractive index coating having bimodal pore distribution including mesopores formed from particle packing and micropores formed from the burning off of organics including the alkyl chain covalently bonded to the silicon. The mass ratio of binder to particles may vary from 0.1 to 20. Porous coatings formed according to the embodiments described herein demonstrate good optical properties (e.g. a low refractive index) while maintaining good mechanical durability due to the presence of a high amount of binder and a close pore structure.
摘要翻译：提供了在基底上形成多孔低折射率涂层的方法和组合物。该方法包括用包含二氧化硅基纳米颗粒和烷基三烷氧基硅烷基粘合剂的溶胶制剂涂覆基材。使用烷基三烷氧基硅烷基粘合剂导致具有双峰孔分布的多孔低折射率涂层，包括由颗粒填充形成的介孔和由共价键接到硅的有机物的烧结形成的微孔。粘合剂与颗粒的质量比可以在0.1至20之间变化。根据本文所述实施方案形成的多孔涂层表现出良好的光学性能（例如低折射率），同时由于存在大量的粘合剂而保持良好的机械耐久性，密闭孔结构。

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