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    • 43. 发明授权
    • Antireflective hardmask composition and methods for using same
    • 防反射硬掩模组​​合物及其使用方法
    • US07378217B2
    • 2008-05-27
    • US11324950
    • 2006-01-04
    • Chang Il OhDong Seon UhDo Hyeon KimJin Kuk LeeIrina NamHui Chan YunJong Seob Kim
    • Chang Il OhDong Seon UhDo Hyeon KimJin Kuk LeeIrina NamHui Chan YunJong Seob Kim
    • G03C1/73G03C1/76G03F7/095
    • G03F7/091
    • Hardmask compositions having antireflective properties useful in lithographic processes, methods of using the same, and semiconductor devices fabricated by such methods, are provided. Antireflective hardmask compositions of the invention include: (a) a polymer component including at least one polymer having a monomeric unit of Formula (I) wherein R1 and R2 may each independently be hydrogen, hydroxyl, alkyl, aryl, allyl, halo, or any combination thereof; R3 and R4 may each independently be hydrogen, a crosslinking functionality, a chromophore, or any combination thereof; R5 and R6 may each independently be hydrogen or an alkoxysilane group; R7 may each independently be hydrogen, alkyl, aryl, allyl, or any combination thereof; and n may be a positive integer; (b) a crosslinking component; and (c) an acid catalyst.
    • 提供了具有抗平滑印刷工艺中有用的抗反射性能的硬掩模组合物,其使用方法以及通过这些方法制造的半导体器件。 本发明的抗反射硬掩模组​​合物包括:(a)包含至少一种具有式(I)的单体单元的聚合物的聚合物组分,其中R 1和R 2各自 独立地是氢,羟基,烷基,芳基,烯丙基,卤素或其任何组合; R 3和R 4可各自独立地为氢,交联官能团,发色团或其任何组合; R 5和R 6可各自独立地为氢或烷氧基硅烷基; R 7可各自独立地为氢,烷基,芳基,烯丙基或其任何组合; n可以是正整数; (b)交联组分; 和(c)酸催化剂。