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41. 发明申请

US20100072470A1 DISPLAY DEVICE 有权
标题翻译：显示设备
公开(公告)号：US20100072470A1
公开(公告)日：2010-03-25
申请号：US12556695
申请日：2009-09-10
申请人： Shunpei Yamazaki , Kengo Akimoto , Shigeki Komori , Hideki Uochi , Tomoya Futamura , Takahiro Kasahara
发明人： Shunpei Yamazaki , Kengo Akimoto , Shigeki Komori , Hideki Uochi , Tomoya Futamura , Takahiro Kasahara
IPC分类号： H01L33/00
CPC分类号： H01L29/7869 , H01L27/0266 , H01L27/1225 , H01L27/124
摘要： A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate electrode over the gate insulating layer, a channel protective layer overlapping with a channel formation region of the first oxide semiconductor layer, and a pair of a first wiring layer and a second wiring layer whose end portions overlap with the gate electrode over the channel protective layer and in which a conductive layer and a second oxide semiconductor layer are stacked. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be reduced and the characteristics of the non-linear element can be improved.
摘要翻译：保护电路包括非线性元件，其包括栅电极，覆盖栅电极的栅极绝缘层，与栅绝缘层上的栅电极重叠的第一氧化物半导体层，与沟道形成区重叠的沟道保护层的第一氧化物半导体层，以及一对第一布线层和第二布线层，其端部与沟道保护层上的栅电极重叠，并且其中层叠有导电层和第二氧化物半导体层。在栅极绝缘层上，具有不同性质的氧化物半导体层彼此结合，由此可以进行与肖特基结的稳定操作。因此，可以降低结漏电，提高非线性元件的特性。

42. 发明授权

US07541213B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07541213B2
公开(公告)日：2009-06-02
申请号：US11822924
申请日：2007-07-11
申请人： Kengo Akimoto
发明人： Kengo Akimoto
IPC分类号： H01L21/00
CPC分类号： H01L27/12 , H01L27/105 , H01L27/11293 , H01L27/1214 , H01L27/1266
摘要： The semiconductor device includes a thin film transistor; a first interlayer insulating film over the thin film transistor; a first electrode electrically connected to one of a source region and a drain region, over the first interlayer insulating film; a second electrode electrically connected to the other of the source region and the drain region; a second interlayer insulating film formed over the first interlayer insulating film, the first electrode, and the second electrode; a first wiring electrically connected to one of the first electrode and the second electrode, on the second interlayer insulating film; and a second wiring not electrically connected to the other of the first electrode and the second electrode, on the second interlayer insulating film; in which the second wiring is not electrically connected to the other of the first electrode and the second electrode by a separation region formed in the second interlayer insulating film.
摘要翻译：半导体器件包括薄膜晶体管; 薄膜晶体管上的第一层间绝缘膜; 在所述第一层间绝缘膜上方电连接到源区和漏区之一的第一电极; 电源地连接到所述源极区域和所述漏极区域中的另一个的第二电极; 形成在第一层间绝缘膜，第一电极和第二电极上的第二层间绝缘膜; 在第二层间绝缘膜上电连接到第一电极和第二电极之一的第一布线; 以及在所述第二层间绝缘膜上不与所述第一电极和所述第二电极中的另一个电连接的第二布线; 其中第二布线不通过形成在第二层间绝缘膜中的分离区域而电连接到第一电极和第二电极中的另一个。

43. 发明授权

US07538238B2 Production method of oil or fat containing polyunsaturated fatty acid-containing triglyceride 有权
标题翻译：含有多不饱和脂肪酸的甘油三酸酯的油脂的生产方法
公开(公告)号：US07538238B2
公开(公告)日：2009-05-26
申请号：US10482373
申请日：2002-07-02
申请人： Kengo Akimoto , Motoo Sumida , Kenichi Higashiyama , Shigeaki Fujikawa
发明人： Kengo Akimoto , Motoo Sumida , Kenichi Higashiyama , Shigeaki Fujikawa
IPC分类号： A23D9/00
CPC分类号： C12P7/6472 , A23C9/1528 , A23C11/04 , A23K20/158 , A23L33/115 , A23L33/12 , C11C3/08 , C11C3/10
摘要： The present invention relates to a production method of an oil containing triglyceride in which medium chain fatty acids are bound to the 1- and 3-positions of the triglyceride and polyunsaturated fatty acid is bound to the 2 position by allowing lipase, which specifically acts on ester bonds at the 1- and 3-positions that has been immobilized on a porous ion exchange resin support having a pore size of about 100 Angstroms or more, to act on a mixture of medium-chain fatty acids and raw material oil containing at least one polyunsaturated fatty acid selected from the group consisting of ω6 series polyunsaturated fatty acid having 18 or more carbon atoms and 3 or more double bonds and ω9 series polyunsaturated fatty acid having 18 or more carbon atoms and 2 or more double bonds, but not containing ω3 series polyunsaturated fatty acid, oils and fats or triglycerides obtained by that method, and the use of the oils and fats or triglycerides in a food, beverage or pharmaceutical composition.
摘要翻译：本发明涉及含有甘油三酯的油的制备方法，其中中链脂肪酸与甘油三酯的1位和3位结合，多不饱和脂肪酸通过使脂肪酶特异性地作用于2位而结合到2位上在固定在孔径为约100埃以上的多孔离子交换树脂载体上的1-位和3-位的酯键作用于中链脂肪酸和至少含有至少一种选自具有18个或更多个碳原子的ω-6系多不饱和脂肪酸和3个或更多个双键的多不饱和脂肪酸和具有18个或更多个碳原子和2个或更多个双键但不含ω3的ω-系列多不饱和脂肪酸系列多不饱和脂肪酸，通过该方法获得的油和脂肪或甘油三酯，以及在食品，饮料或药物中使用油和脂肪或甘油三酸酯 l组成。

44. 发明授权

US07492090B2 Display device and method for manufacturing the same 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US07492090B2
公开(公告)日：2009-02-17
申请号：US10937904
申请日：2004-09-10
申请人： Shunpei Yamazaki , Toru Takayama , Naoya Sakamoto , Kengo Akimoto , Keiji Sato , Tetsunori Maruyama
发明人： Shunpei Yamazaki , Toru Takayama , Naoya Sakamoto , Kengo Akimoto , Keiji Sato , Tetsunori Maruyama
IPC分类号： H01J63/04 , H01J1/62 , H05B33/04
CPC分类号： H01L51/5206 , H01L27/3244 , H01L27/3246 , H01L27/3281 , H01L27/3295 , H01L51/5215 , Y10S428/917
摘要： According to one aspect of the present invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide is applied as an electrode on the side of injecting a hole (a hole injection electrode; an anode) instead of the conventional conductive transparent oxide layer such as ITO. In addition, according to another aspect of the invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide, each of which content is different, is applied as a hole injection electrode. Preferably, silicon or a silicon oxide concentration of the conductive layer on the side where it is connected to a TFT ranges from 1 atomic % to 6 atomic % and a silicon or silicon oxide concentration on the side of a layer containing an organic compound ranges from 7 atomic % to 15 atomic %.
摘要翻译：根据本发明的一个方面，在注入孔（空穴注入电极，阳极）的一侧，代替传统的导电透明氧化物，涂覆含有硅或氧化硅的导电透明氧化物层的叠层结构作为电极层如ITO。此外，根据本发明的另一方面，作为空穴注入电极，施加含有硅或氧化硅的导电性透明氧化物层（其含量不同）的叠层结构。优选地，在与TFT连接的一侧上的导电层的硅或氧化硅浓度范围为1原子％至6原子％，并且在含有机化合物的层侧的硅或氧化硅浓度范围为 7原子％至15原子％。

45. 发明申请

US20090042326A1 DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20090042326A1
公开(公告)日：2009-02-12
申请号：US12239248
申请日：2008-09-26
申请人： Shunpei Yamazaki , Toru Takayama , Naoya Sakamoto , Kengo Akimoto , Keiji Sato , Tetsunori Maruyama
发明人： Shunpei Yamazaki , Toru Takayama , Naoya Sakamoto , Kengo Akimoto , Keiji Sato , Tetsunori Maruyama
IPC分类号： H01L33/00
CPC分类号： H01L51/5206 , H01L27/3244 , H01L27/3246 , H01L27/3281 , H01L27/3295 , H01L51/5215 , Y10S428/917
摘要： According to one aspect of the present invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide is applied as an electrode on the side of injecting a hole (a hole injection electrode; an anode) instead of the conventional conductive transparent oxide layer such as ITO. In addition, according to another aspect of the invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide, each of which content is different, is applied as a hole injection electrode. Preferably, silicon or a silicon oxide concentration of the conductive layer on the side where it is connected to a TFT ranges from 1 atomic % to 6 atomic % and a silicon or silicon oxide concentration on the side of a layer containing an organic compound ranges from 7 atomic % to 15 atomic %.
摘要翻译：根据本发明的一个方面，在注入孔（空穴注入电极，阳极）的一侧，代替传统的导电透明氧化物，涂覆含有硅或氧化硅的导电透明氧化物层的叠层结构作为电极层如ITO。此外，根据本发明的另一方面，作为空穴注入电极，施加含有硅或氧化硅的导电性透明氧化物层（其含量不同）的叠层结构。优选地，在与TFT连接的一侧上的导电层的硅或氧化硅浓度范围为1原子％至6原子％，并且在含有机化合物的层侧的硅或氧化硅浓度范围为 7原子％至15原子％。

46. 发明申请

US20080308796A1 Semiconductor Device and Manufacturing Method Thereof 有权
公开(公告)号：US20080308796A1
公开(公告)日：2008-12-18
申请号：US12184401
申请日：2008-08-01
申请人： Kengo Akimoto , Tatsuya Honda , Norihito Sone
发明人： Kengo Akimoto , Tatsuya Honda , Norihito Sone
IPC分类号： H01L29/10 , H01L21/00
CPC分类号： H01L29/78696 , H01L21/02164 , H01L21/0217 , H01L21/02178 , H01L21/02266 , H01L21/02565 , H01L21/02631 , H01L21/428 , H01L21/465 , H01L21/477 , H01L27/1225 , H01L27/1285 , H01L29/04 , H01L29/045 , H01L29/7869
摘要： An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

47. 发明申请

US20080153039A1 Manufacturing Method of Semiconductor Device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20080153039A1
公开(公告)日：2008-06-26
申请号：US11957884
申请日：2007-12-17
申请人： Kengo Akimoto
发明人： Kengo Akimoto
IPC分类号： G03F7/00
CPC分类号： H01L27/1266 , G02F2001/136295 , H01L21/263 , H01L21/76802 , H01L21/76838 , H01L27/1214
摘要： A light absorption layer is formed over a substrate, the light absorption layer is selectively irradiated with a laser beam, and a region of the light absorption layer, which is irradiated with the laser beam, is removed. By adding an impurity element imparting one conductivity type or an inert element to a remaining part of the light absorption layer, a tensile stress of the light absorption layer is made lower than that before irradiation with the laser beam.
摘要翻译：在基板上形成光吸收层，用激光束选择性地照射光吸收层，去除照射激光的光吸收层的区域。通过向光吸收层的剩余部分添加赋予一种导电型或惰性元素的杂质元素，使得光吸收层的拉伸应力低于用激光束照射之前的拉伸应力。

48. 发明申请

US20070072439A1 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070072439A1
公开(公告)日：2007-03-29
申请号：US11524549
申请日：2006-09-21
申请人： Kengo Akimoto , Tatsuya Honda , Norihito Sone
发明人： Kengo Akimoto , Tatsuya Honda , Norihito Sone
IPC分类号： H01L21/00
CPC分类号： H01L29/78696 , H01L21/02164 , H01L21/0217 , H01L21/02178 , H01L21/02266 , H01L21/02565 , H01L21/02631 , H01L21/428 , H01L21/465 , H01L21/477 , H01L27/1225 , H01L27/1285 , H01L29/04 , H01L29/045 , H01L29/7869
摘要： An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.
摘要翻译：本发明的目的是提供一种半导体器件，其制造工艺不复杂并且可以通过以氧化锌为代表的氧化物半导体膜形成薄膜晶体管来制造成本。对于半导体器件，在基板上形成栅电极; 形成覆盖栅电极的栅极绝缘膜; 在栅绝缘膜上形成氧化物半导体膜; 并且在氧化物半导体膜上形成第一导电膜和第二导电膜。氧化物半导体膜在沟道区域中至少具有结晶化区域。

49. 发明申请

US20060255719A1 METHOD FOR MANUFACTURING DISPLAY DEVICE 有权
标题翻译：制造显示装置的方法
公开(公告)号：US20060255719A1
公开(公告)日：2006-11-16
申请号：US11382420
申请日：2006-05-09
申请人： Yoshiaki Oikawa , Kengo Akimoto
发明人： Yoshiaki Oikawa , Kengo Akimoto
IPC分类号： H05B33/14 , H01L51/50
CPC分类号： H01L27/3258 , H01L27/3248 , H01L51/506 , H01L51/5076 , H01L51/5206 , H01L51/5215 , H01L51/5218 , H01L51/5221 , H01L51/5234 , H01L2227/323 , H01L2251/306 , H01L2251/308 , H05B33/10
摘要： It is an object of the present invention to provide a technique for manufacturing a highly reliable display device at low cost with high yield. A first electrode layer is formed by a sputtering method using a gas containing hydrogen or H2O, an electroluminescent layer is formed over the first electrode layer, and a second electrode layer is formed over the electroluminescent layer. According to one aspect of the present invention, a display device is manufactured to include a first electrode layer including indium zinc oxide containing silicon oxide and tungsten oxide, an electroluminescent layer over the first electrode layer, and a second electrode layer over the electroluminescent layer, where the electroluminescent layer includes a layer containing an organic compound and an inorganic compound to be in contact with the first electrode layer.
摘要翻译：本发明的一个目的是提供一种以高成本低成本制造高度可靠的显示装置的技术。通过使用含有氢或H 2 O 2的气体的溅射法形成第一电极层，在第一电极层上形成电致发光层，在电致发光层上形成第二电极层。根据本发明的一个方面，制造显示装置包括：包含含氧化硅和氧化钨的氧化铟锌的第一电极层，第一电极层上的电致发光层，以及电致发光层上的第二电极层，其中电致发光层包括含有有机化合物的层和与第一电极层接触的无机化合物。

50. 发明申请

US20060252736A1 Process for producing unsaturated fatty acid-containing oils 有权
公开(公告)号：US20060252736A1
公开(公告)日：2006-11-09
申请号：US11482901
申请日：2006-07-10
申请人： Kenichi Higashiyama , Kengo Akimoto , Sakayu Shimizu
发明人： Kenichi Higashiyama , Kengo Akimoto , Sakayu Shimizu
IPC分类号： C12P7/64 , A61K31/56
CPC分类号： C12P7/6472 , A23D9/00 , A23K20/158 , A23L33/12 , A23L33/40 , A23V2002/00 , C12P7/64 , Y10S426/801 , Y10S426/807 , A23V2250/54252 , A23V2250/1874 , A23V2250/1868 , A23V2250/1862 , A23V2250/187 , A23V2250/612 , A23V2250/28 , A23V2250/70 , A23V2250/156
摘要： An edible oil obtained by culturing a microorganism belong to the genus Mortierella subgenus Mortierella in a medium containing a nitrogen source derived from soybean is discussed. The oils obtained have a low 24,25-methylenecholest-5-en-3β-ol content.

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