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    • 42. 发明授权
    • Optical sensor
    • 光学传感器
    • US06194740B1
    • 2001-02-27
    • US09115840
    • 1998-07-15
    • Hongyong ZhangMasayuki Sakakura
    • Hongyong ZhangMasayuki Sakakura
    • H01L2904
    • H01L31/1129
    • Disposing the light absorption layer formed in contact with a polycrystal silicon layer of a bottom gate type polycrystal silicon TFT allows a depletion layer formed between drain and channel forming regions to extend further into the inside of the light absorption layer, resulting in collection of photo carriers produced in the depletion layer into the channel forming region. The photo carriers collected into the channel forming region are subsequently collected into the source region to be output as large photocurrents by high mobility of the polycrystal silicon.
    • 配置与底栅型多晶硅TFT的多晶硅层接触形成的光吸收层允许在漏极和沟道形成区域之间形成的耗尽层进一步延伸到光吸收层的内部,导致光载体的收集 在耗尽层中产生进入通道形成区域。 收集到通道形成区域中的光载体随后通过多晶硅的高迁移率被收集到源区域中作为大光电流输出。
    • 50. 发明授权
    • Optical sensor
    • 光学传感器
    • US06787808B1
    • 2004-09-07
    • US09712286
    • 2000-11-15
    • Hongyong ZhangMasayuki Sakakura
    • Hongyong ZhangMasayuki Sakakura
    • H01L31036
    • H01L31/1129
    • Disposing the light absorption layer formed in contact with a polycrystal silicon layer of a bottom gate type polycrystal silicon TFT allows a depletion layer formed between drain and channel forming regions to extend further into the inside of the light absorption layer, resulting in collection of photo carriers produced in the depletion layer into the channel forming region. The photo carriers collected into the channel forming region are subsequently collected into the source region to be output as large photocurrents by high mobility of the polycrystal silicon.
    • 配置与底栅型多晶硅TFT的多晶硅层接触形成的光吸收层允许在漏极和沟道形成区域之间形成的耗尽层进一步延伸到光吸收层的内部,导致光载体的收集 在耗尽层中产生进入通道形成区域。 收集到通道形成区域中的光载体随后通过多晶硅的高迁移率被收集到源区域中作为大光电流输出。