会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 43. 发明专利
    • Micropump and minimum liquid transfer method
    • JP2004036471A
    • 2004-02-05
    • JP2002194139
    • 2002-07-03
    • Hitachi Ltd株式会社日立製作所
    • SUZUKI ATSUSHI
    • B81B1/00F04B9/00F04B43/12F04F1/04
    • PROBLEM TO BE SOLVED: To provide a liquid driving mechanism, namely, a micropump producing an increase in a driving flow rate and having improved energy converting efficiency.
      SOLUTION: AC power is input to thermoelectric elements 10 for alternately repeating heat absorption from surroundings and heat release to the surroundings on heat transmission faces to cause periodic boiling/condensation of an operating liquid 21 in a channel 23 to drive the liquid with a volume change of the liquid as a driving source. The micropump uses heater means for heating the minimum liquid to be carried, the heater means consisting of the plurality of thermoelectric elements each having two heat transmission faces, a heat absorbing face and a heat releasing face, an AC power supply for charging phase-different AC power into the thermoelectric elements and electric insulating layers provided on the heat absorbing faces and the heat releasing faces. It comprises the channel thermally connected to the heat absorbing faces and the heat releasing faces for carrying the minimum liquid therethrough and a heat release means provided in the channel.
      COPYRIGHT: (C)2004,JPO
    • 47. 发明专利
    • POWER-CONVERTING DEVICE
    • JPH11340393A
    • 1999-12-10
    • JP14539398
    • 1998-05-27
    • HITACHI LTD
    • SUZUKI ATSUSHISASAKI KANAMEKUWABARA HEIKICHI
    • H01L23/473H02M7/04H02M7/12H02M7/42
    • PROBLEM TO BE SOLVED: To improve radiation performance to reduce the size, and to improve the reliability of a semiconductor mounting structure in a power-converting device. SOLUTION: In semiconductor module 101, a semiconductor switching element 1 and a diode 2 are soldered to a heat reception member 6 that is made of copper as a material with solder 4 and 5 through an insulating substrate 3. The heat reception member 6 is composed of a base thickness part and a fin 7, and nickel plating or tin plating is preferably performed at least at a side for mounting the element. On each of six insulating substrates 3, a main circuit part corresponding to the upper or lower arm of two phases out of three ones is mounted. In this embodiment, two semiconductor switching elements and two diodes are mounted onto one insulating substrate 3. Six insulating substrates with such a configuration are mounted to one heat reception member 6, and a three-phase inverter main circuit is constituted to reduce the size. On the lower surface of the heat reception member 6, the fin 7 is formed in a direction vertical to the element-mounting surface.