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41. 发明专利

JPH0317268A METHOD AND DEVICE FOR VACUUM TREATMENT 失效
公开(公告)号：JPH0317268A
公开(公告)日：1991-01-25
申请号：JP4542690
申请日：1990-02-28
申请人： HITACHI LTD
发明人： TANAKA SHIGERU , SETOYAMA HIDETSUGU , OIKAWA SHINZO , YAMAMURA SHIGEKI
IPC分类号： C23C14/50
摘要： PURPOSE:To improve the uniformity in the thickness and thickness distribution of a film by forming the film on a substrate stage while rotating the stage arranged in a vacuum vessel at each vacuum treating position. CONSTITUTION:The vacuum treating device is formed by the vacuum vessel 2 having a first treating position A and a second treating position B, the substrate stage 12, a substrate holding means 11, a driving means 9 and a substrate rotating means 7 for rotating the stage 12 at the second treating position B. The stage 12 is moved between the first treating position A and the second treating position B by the substrate holding means 11, and the stage 12 is revolved by the means 11 at the first treating position. The driving means 9 is linked to the holding means 11, and the stage 12 is moved between the first and second treating positions and revolved at the first treating position A by driving the means 9.

42. 发明专利

JPH01301870A ION BEAM MILLING DEVICE 失效
公开(公告)号：JPH01301870A
公开(公告)日：1989-12-06
申请号：JP13134588
申请日：1988-05-31
申请人： HITACHI LTD
发明人： TANAKA SHIGERU , HASHIMOTO ISAO
IPC分类号： C23F4/00
摘要： PURPOSE:To prevent temp. rise in substrates by a simplified constitution by disposing spare chambers capable of evacuation on both sides of a treatment chamber, moving holders to move objects of working into the treatment chamber, and providing means of cooling the holders in the spare chambers, respectively. CONSTITUTION:Gate valves 4a, 4b are closed and the inside of a treatment chamber 1 is evacuated to high vacuum. A substrate 11 is placed on a stand 8a3 of a holder 8a in a spare chamber 3a and the inside of the spare chamber 3a is reduced to high vacuum. The gate valve 4a is opened and the holder 8a is turned and allowed to reach the treatment chamber 1, and an ion beam from an ion source 2 irradiates the substrate 11 ion milling treatment to the substrate 11 is executed. In a spare chamber 3b also, a substrate 11 is introduced and the inside of the chamber 3b is reduced to high vacuum. In the course of alternately repeated ion milling operations, cooling water via cooling water-introducing pipes 9a1, 9b1 is allowed to flow through the tubes inserted in the holders 8a, 8b, respectively, by which the substrates 11 placed on the stand 8a3 and a stand 8b3, respectively, are cooled. By this method, temp. rise in the substrates 11 can be inhibited and the breakage of the substrates 11 can be prevented.

43. 发明专利

JPS53131582A GAS SAMPLING TUBE FOR CENTRIFUGAL SEPARATORS 失效
公开(公告)号：JPS53131582A
公开(公告)日：1978-11-16
申请号：JP4588677
申请日：1977-04-22
申请人： HITACHI LTD
发明人： TAKAGI YUUSUKE , TANAKA SHIGERU , MATSUMOTO MANABU
IPC分类号： B01D59/20
摘要： PURPOSE:In the gas sampling tube of the above title, to reduce the pressure loss at gas sampling port and to improve gas discharge and separation performances.

44. 发明专利

JPS52107681A CENTRIFUGAL GASSSEPARATING MACHINE 失效
公开(公告)号：JPS52107681A
公开(公告)日：1977-09-09
申请号：JP2326576
申请日：1976-03-05
申请人： HITACHI LTD
发明人： TANAKA SHIGERU , MATSUMOTO MANABU , TAKAGI YUUSUKE
IPC分类号： B01D59/20 , B04B5/08
摘要： PURPOSE:To provide a gas-separating centrifugal machine with improved gas-separating efficiency by elimianting ags agitating process and by properly setting radiuswise position of air supply.

45. 发明专利

JPS515675A ENSHINBUNRIKINO HAIKIKANONDOTO GASUONDONO SEIGYOSOCHI 失效
公开(公告)号：JPS515675A
公开(公告)日：1976-01-17
申请号：JP7631974
申请日：1974-07-05
申请人： HITACHI LTD
发明人： TAKAGI TAKENOBU , KOYAMA TAKAO , TANAKA SHIGERU
IPC分类号： B01D59/20 , B04B5/08

46. 发明专利

JP2001257104A NEUTRAL POINT GROUNDING RESISTOR AND GAS CIRCUIT BREAKER 失效
公开(公告)号：JP2001257104A
公开(公告)日：2001-09-21
申请号：JP2001013184
申请日：2001-01-22
申请人： HITACHI LTD
发明人： SHOJI MORITAKA , KITAMI CHIKASHI , YAMADA SEIICHI , TAKAHASHI KEN , SHIRAKAWA SHINGO , YAMAZAKI TAKEO , TANAKA SHIGERU , GENKIYO NARIHISA
IPC分类号： H01C7/00 , H01C7/02 , H01H33/16 , H01H33/70 , H02B1/16
摘要： PROBLEM TO BE SOLVED: To provide a neutral point grounding resistor and a gas circuit breaker which can be lessened in size. SOLUTION: A neutral point grounding resistor comprises a zinc oxide as a main component and an additive composed of aluminum oxide of 3.0 to 40 mol%, magnesium oxide of 2.0 to 40 mol%, silicon oxide of 0.1 to 40 mol%, and calcium oxide of 0.005 to 0.5 mol% as an integral component, or borosilicate glass which contains calcium oxide of 1.0 to 40.0 wt.%, and amounts to 0.03 to 3.0 wt.% of all the resistor is used as an additive instead of the above additive, the additive in which calcium oxide is limited in amount to 0.0043 to 0.43 wt.% of all the resistor serves as an integral component, and furthermore the resistor is formed of ceramic resistor whose temperature coefficient of electric resistance is positive. When a neutral point grounding resistor is formed of ceramic resistors of high endurance strength, necessary resistors can be lessened in number as compared with conventional resistors, so that a neutral point grounding resistor and a gas circuit breaker can be lessened in size.

47. 发明专利

JP2000235835A DRIVE METHOD FOR ION SOURCE FOR ION BEAM MACHINING APPARATUS AND DRIVE METHOD FOR ION BEAM MACHINING APPARATUS 失效
公开(公告)号：JP2000235835A
公开(公告)日：2000-08-29
申请号：JP35387799
申请日：1999-12-14
申请人： HITACHI LTD
发明人： TANAKA SHIGERU , HASHIMOTO ISAO
IPC分类号： H01J27/08 , C23C14/46 , C23C14/48 , H01J37/08 , H01J37/30
摘要： PROBLEM TO BE SOLVED: To reduce frequency of occurrence of breakdown due to particle and improve opening time of an apparatus by operating with stable condition of the apparatus for a long time and minimizing maintenance work such as cleaning work for the apparatus. SOLUTION: In an ion source 1 which introduces gas into a vacuum case and generates a plasma of the gas to provide electric field and extract ion in the plasma as ion beam, an ion power source is provided with an arc power source 7, an accelerating power source 8 apparatus positive electric potential to an accelerating electrode 2 for extracting the ion beam and a decelerating power source 9 applying negative electric potential for prevention of inflow of electrons. When the ion surface 1 is driven, the negative electric potential is applied to the electrode 3 after the positive potential is applied to the electrode 2.

48. 发明专利

JP2000218545A WATER JET PEENING DEVICE 失效
公开(公告)号：JP2000218545A
公开(公告)日：2000-08-08
申请号：JP1742399
申请日：1999-01-26
申请人： HITACHI LTD , HITACHI NUCLEAR ENG , HITACHI KISOU KK , HITACHI IBARAKI BUSINESS ENGIN
发明人： HIRANO KATSUHIKO , ENOMOTO KUNIO , HAYASHI EISAKU , SHIMIZU SADAHITO , MORINAKA TADASHI , ISHIKAWA TETSUYA , TANAKA SHIGERU , CHIBA NOBORU
IPC分类号： B24C1/10 , B24C3/04 , G21C19/00
摘要： PROBLEM TO BE SOLVED: To efficiently apply peening execution to a large bore cylindrical structure by injecting a jet containing cavitation bubbles to the cylindrical structure of a large bore at a low angle. SOLUTION: In a nozzle 2 introducing pressure water to generate in the water a jet 3 containing bubbles generated by cavitation and a water jet peening device injecting a jet containing bubbles to a cylindrical structure 1 arranged in the water to apply peening execution to a surface of the cylindrical structure, an injecting direction of the jet is 45 degrees or less relating to a tangent of the cylindrical structure.

49. 发明专利

JPH10284684A METHOD FOR MOUNTING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR CHIP 失效
公开(公告)号：JPH10284684A
公开(公告)日：1998-10-23
申请号：JP8518697
申请日：1997-04-03
申请人： HITACHI LTD , HITACHI VLSI ENG
发明人： TANAKA SHIGERU
IPC分类号： H01L21/60 , H01L25/065 , H01L25/07 , H01L25/18
摘要： PROBLEM TO BE SOLVED: To provide the mounting method for the semiconductor devices and the semiconductor chips for a module, a card or the like, which can improve high-density mounting and wiring freedom. SOLUTION: In a flash memory card used as an external memory device for a personal computer, a work station and the like, the device is constituted of a plurality of semiconductor chips 1, a mounting substrate 2 wherein these semiconductor chips 1 are mounted on both surfaces, and two tape base materials 3 for electrically connecting the semiconductor chip 1 and the mounting substrate 2. The specified range is sealed with a sealing body 4. The device is contained in a case 5 and handled at the same time. The semiconductor chips 1 consists of two kinds of semiconductor chips 6 and 7, which are cut and formed as a chip unit. These chips are directly mounted on the mounting substrate 2. At the same time, the connection of these semiconductor chips 6 and 7 and the mounting substrate 2 is performed through the tape base materials 3.

50. 发明专利

JPH10256002A MANUFACTURE OF CERAMIC RESISTOR 失效
公开(公告)号：JPH10256002A
公开(公告)日：1998-09-25
申请号：JP5461997
申请日：1997-03-10
申请人： HITACHI LTD
发明人： SHOJI MORITAKA , KITAMI HIROSHI , SHIRAKAWA SHINGO , TANAKA SHIGERU , TAKAHASHI KEN
IPC分类号： C04B35/453 , H01C7/00 , H01C7/10
摘要： PROBLEM TO BE SOLVED: To improve workability by reducing the solidification of slurry, and to provide a manufacturing method of a zinc oxide ceramic resistor having improved electric characteristics. SOLUTION: In the manufacturing method of a ceramic resistor which is formed by performing the processes of mixing, granulating, molding and firing, etc., of the power having zinc oxide as the main component and the aluminum oxide (3.0 to 40mol%), magnesium oxide (2.0 to 40mol%) and silicon oxide (0.1 to 10mol%) as additional components, the whole quantity or a part of magnesium oxide is replaced with magnesium nitrate, and the whole quantity of the magnesium oxide and the magnesium nitrate is made equivalent to the original magnesium oxide.

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