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41. 发明授权

US4928107A Signal receiving method for a user's device in a global positioning system 失效
标题翻译：全球定位系统中用户设备的信号接收方法
公开(公告)号：US4928107A
公开(公告)日：1990-05-22
申请号：US367665
申请日：1989-06-19
申请人： Hiroshi Kuroda , Atsushi Watanabe
发明人： Hiroshi Kuroda , Atsushi Watanabe
IPC分类号： G01S1/00 , G01S19/28
CPC分类号： G01S19/28 , G01S19/426
摘要： In a user's device of a GPS, the calculation of GDOP values for determining satellites to be used for the positioning is initiated periodically with a predetermined operation period. Once they are determined in a certain operation period, the processing for the positioning is repeatedly executed on the basis of signals from the determined satellites through the operation period, until satellites to be used are determined in a succeeding operation period. Plural times of the positioning can be executed for every time of the calculation of a GDOP value. If, therefore, a frequency of executing the positioning are made almost as equal as conventionally, a frequency of carrying out the time-consuming calculation of GDOP values is decreased, whereby the load of a microprocessor in the user's device can be remarkably reduced.

42. 发明授权

US4762588A Method of manufacturing calcium carbonate single crystal 失效
标题翻译：碳酸钙单晶的制造方法
公开(公告)号：US4762588A
公开(公告)日：1988-08-09
申请号：US924402
申请日：1986-10-29
申请人： Shinichi Hirano , Ryo Toyokuni , Hiroshi Kuroda
发明人： Shinichi Hirano , Ryo Toyokuni , Hiroshi Kuroda
IPC分类号： C30B29/10 , C30B7/00 , C30B7/10
CPC分类号： C30B29/22 , C30B7/00 , Y10S117/918 , Y10T117/1096
摘要： A starting material composed of calcium carbonate is dissolved in a nitrate aqueous solution containing alkali nitrate under application of heat and pressure. The starting material is hydrothermally synthesized within the nitrate aqueous solution to effect the rapid growth of calcium carbonate single crystal.
摘要翻译：将由碳酸钙组成的原料在加热和加压下在含有硝酸碱的硝酸盐水溶液中溶解。将原料在硝酸盐水溶液中水热合成，以实现碳酸钙单晶的快速生长。

43. 发明授权

US4687649A Flue gas desulfurization process 失效
标题翻译：烟气脱硫工艺
公开(公告)号：US4687649A
公开(公告)日：1987-08-18
申请号：US571065
申请日：1984-01-16
申请人： Hiroshi Kuroda , Tsukasa Nishimura , Masakatsu Nishimura , Taiki Hashimoto , Osamu Kanda , Shigeru Nozawa , Kenji Shibata
发明人： Hiroshi Kuroda , Tsukasa Nishimura , Masakatsu Nishimura , Taiki Hashimoto , Osamu Kanda , Shigeru Nozawa , Kenji Shibata
IPC分类号： B01D53/50 , B01D53/68 , B01D53/77 , B01D61/44 , C01F11/46 , F28D15/02 , C01B17/00
CPC分类号： F28D15/0266 , B01D53/501 , B01D53/508 , B01D53/68 , B01D61/44 , C01F11/464 , C02F2103/18 , C02F2201/46115
摘要： A flue gas desulfurization process by which gypsum can be recovered; the amount of water used therein is small, the effluent is treated in a closed system, the equipment used is minimized, and no scaling occurs; and an apparatus therefor are provided, the process including the following first process and second process: the first process comprising a cooling step of cooling and dedusting a SO.sub.2 -containing flue gas and removing acidic gases, an absorption step of contacting the cooled gas with a slurry containing limestone and lime to absorb and remove SO.sub.x and form CaSO.sub.3, a pH-adjusting step of adding H.sub.2 SO.sub.4 to the resulting slurry, an oxidation step of blowing an oxygen-containing gas in the pH-adjusted slurry to form gypsum, a step of concentrating the resulting gypsum slurry, a step of adjusting the concentration of the resulting slurry, a step of centrifugally separating gypsum, and a step of treating the effluent discharged from the cooling step, and the second process comprising, in the first process, further feeding the slurry of the absorption step to the cooling step where unreacted limestone is reacted with SO.sub.2 to form CaSO.sub.3 .

44. 发明授权

US4307978A Method of relieving earth pressure in a working area 失效
标题翻译：减轻工作区土压的方法
公开(公告)号：US4307978A
公开(公告)日：1981-12-29
申请号：US94975
申请日：1979-11-16
申请人： Osamu Kimura , Hiroshi Kuroda
发明人： Osamu Kimura , Hiroshi Kuroda
IPC分类号： E21D19/00 , E21C41/00 , E21C41/18 , E21D19/02 , E21F17/18 , E21F17/00
CPC分类号： E21C41/18 , E21F17/185
摘要： The earth pressure in the underground working area is effectively alleviated by injecting high-pressure liquid into a weak ground stratum underlying the ore bed being excavated thereby to enlarge the stress envelope formed around the working face. The liquid injection hole is formed as by drill means to extend from the working face or a neighboring gateway through an intermediate layer into the weak stratum preferably at a point outside of the stress envelope initially formed.
摘要翻译：通过将高压液体注入到被挖掘的矿床下面的弱地层中，有效地减轻了地下工作区的土压，从而扩大了在工作面周围形成的应力包络。液体注入孔通过钻孔装置形成，优选地在最初形成的应力包络外的位置处，从工作面或相邻的通道延伸穿过中间层进入弱层。

45. 发明授权

US4177640A Internal combustion engine system 失效
标题翻译：内燃机系统
公开(公告)号：US4177640A
公开(公告)日：1979-12-11
申请号：US793492
申请日：1977-05-04
申请人： Hiroshi Kuroda , Yasuo Nakajima , Yoshimasa Hayashi
发明人： Hiroshi Kuroda , Yasuo Nakajima , Yoshimasa Hayashi
IPC分类号： F02B75/20 , F01N3/34 , F02B23/08 , F02B47/08 , F02B75/18 , F02D21/08 , F02D37/00 , F02F1/24 , F02F1/42 , F02M25/07 , F02P5/10 , F02P15/08 , F02M25/06
CPC分类号： F02F1/242 , F01N3/34 , F02B23/08 , F02D21/08 , F02B2023/085 , F02B2075/1812 , Y02T10/125 , Y02T10/146 , Y02T10/20
摘要： Hemispherical combustion chambers of a cross flow type cylinder head, having symmetrically disposed and synchronously sparked plugs are fed a near stoichiometric air fuel mixture containing up to 40% EGR gas which after combustion is exhausted through individual ports, mixed with secondary air supplied by a simple reed valve and oxidized in a catalytic converter.
摘要翻译：具有对称设置和同步火花塞的横流式气缸盖的半球形燃烧室供给近似化学计量的空气燃料混合物，其含有高达40％的EGR气体，其在燃烧通过各个端口排出之后，与由简单的簧片阀，并在催化转化器中氧化。

46. 发明授权

US08574963B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08574963B2
公开(公告)日：2013-11-05
申请号：US13196171
申请日：2011-08-02
申请人： Hiroshi Kuroda
发明人： Hiroshi Kuroda
IPC分类号： H01L21/00
CPC分类号： H01L21/561 , H01L21/563 , H01L21/565 , H01L23/3128 , H01L23/49838 , H01L24/05 , H01L24/06 , H01L24/13 , H01L24/16 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/743 , H01L24/78 , H01L24/83 , H01L24/85 , H01L24/92 , H01L24/97 , H01L25/0655 , H01L25/50 , H01L2224/0346 , H01L2224/0401 , H01L2224/04042 , H01L2224/05124 , H01L2224/05554 , H01L2224/05571 , H01L2224/05644 , H01L2224/05655 , H01L2224/06165 , H01L2224/13144 , H01L2224/16225 , H01L2224/16237 , H01L2224/27013 , H01L2224/27312 , H01L2224/2919 , H01L2224/32225 , H01L2224/45144 , H01L2224/48137 , H01L2224/48227 , H01L2224/48465 , H01L2224/48479 , H01L2224/48644 , H01L2224/48655 , H01L2224/49175 , H01L2224/73204 , H01L2224/73265 , H01L2224/743 , H01L2224/7555 , H01L2224/78301 , H01L2224/83191 , H01L2224/83192 , H01L2224/83385 , H01L2224/85051 , H01L2224/85203 , H01L2224/85207 , H01L2224/85986 , H01L2224/92125 , H01L2224/97 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/0665 , H01L2924/12043 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/3641 , H01L2224/85 , H01L2224/83 , H01L2224/48471 , H01L2224/92247 , H01L2224/85186 , H01L2924/00012 , H01L2924/00 , H01L2924/01032 , H01L2224/4554
摘要： Occurrence of a void is suppressed when mounting semiconductor chips over a wiring substrate via a paste-like adhesive material. A die bonding step is provided which mounts semiconductor chips over a chip-mounting region of the wiring substrate via the adhesive material. The wiring substrate includes a plurality of wirings (first wirings) and dummy wirings (second wirings) formed on an upper surface of a core layer. The chip-mounting region is provided over the first wirings and the second wirings. In addition, the die bonding step includes a step of applying the adhesive material over an adhesive material application region over the chip-mounting region. Each of the second wirings is extended along a direction in which the adhesive material spreads in the die bonding step.
摘要翻译：通过糊状粘合剂将半导体芯片安装在布线基板上时，抑制了空隙的发生。提供了通过粘合材料将半导体芯片安装在布线基板的芯片安装区域上的芯片焊接步骤。布线基板包括形成在芯层的上表面上的多条布线（第一布线）和虚拟布线（第二布线）。芯片安装区域设置在第一布线和第二布线之上。此外，芯片接合步骤包括将粘合剂材料涂覆在芯片安装区域上的粘合材料施加区域上的步骤。每个第二布线沿着粘合剂材料在芯片接合步骤中扩展的方向延伸。

47. 发明授权

US08558393B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08558393B2
公开(公告)日：2013-10-15
申请号：US13442247
申请日：2012-04-09
申请人： Hiroshi Kuroda
发明人： Hiroshi Kuroda
IPC分类号： H01L25/065
CPC分类号： H01L25/18 , H01L23/3128 , H01L23/5386 , H01L25/0652 , H01L25/0657 , H01L2224/04042 , H01L2224/06155 , H01L2224/48091 , H01L2224/48227 , H01L2224/49171 , H01L2224/73265 , H01L2224/92247 , H01L2225/0651 , H01L2924/10253 , H01L2924/00014 , H01L2924/00
摘要： Miniaturization and acceleration of the operating speed of a System In Package (SIP) type semiconductor device in which a memory chip and a microcomputer chip are mounted over a wiring board are promoted. When mounting a microcomputer chip and a memory chip over an upper surface of a wiring board, the memory chip is disposed such that second conductive pads of the wiring board arranged along a first chip side (a side along which data system electrode pads are arranged) of the memory chip are positioned, in the plan view, in a region between an extended line of a third chip side of the microcomputer chip and an extended line of a fourth chip side of the microcomputer chip. Thus, a length of a data system wiring for coupling a data system electrode pad of the microcomputer chip with the data system electrode pad of the memory chip is minimized.
摘要翻译：促进将存储芯片和微型计算机芯片安装在布线板上的系统级封装（SIP）型半导体器件的操作速度的小型化和加速。当将微计算机芯片和存储芯片安装在布线板的上表面上时，存储芯片被布置成沿着第一芯片侧（布置有数据系统电极焊盘的一侧）布置的布线板的第二导电焊盘，在平面图中，位于微型计算机芯片的第三芯片侧的延长线与微型计算机芯片的第四芯片侧的延长线之间的区域。因此，将微型计算机芯片的数据系统电极焊盘与存储芯片的数据系统电极焊盘耦合的数据系统布线的长度最小化。

48. 发明授权

US08232914B2 Radar apparatus 失效
标题翻译：雷达装置
公开(公告)号：US08232914B2
公开(公告)日：2012-07-31
申请号：US12187093
申请日：2008-08-06
申请人： Hiroshi Kuroda , Kazuo Matsuura
发明人： Hiroshi Kuroda , Kazuo Matsuura
IPC分类号： G01S13/32 , G01S7/35 , G01S13/00 , G01S13/93
CPC分类号： G01S13/34 , G01S7/354 , G01S13/24 , G01S2007/356
摘要： A distance measuring apparatus comprising a transmission antenna to radiate a transmission radio wave; a reception antenna to receive a reflected signal from a target; an analog-to-digital converter to perform an analog-to-digital conversion for converting a reception signal; and a signal processing unit to process the converted signal and to detect the target, in which a transmission frequency of the transmission radio wave to be radiated is switched at a timing synchronized with a sampling frequency of the analog-to-digital conversion, the transmission frequency is switched in accordance with an arbitrary pattern within a frequency band, and the reception signal is rearranged in order on the basis of the arbitrary pattern at a time of the transmission to then be subject to a radar signal processing.
摘要翻译：一种距离测量装置，包括：发射天线，用于辐射发射无线电波; 接收天线，用于从目标接收反射信号; 模拟数字转换器，用于执行用于转换接收信号的模数转换; 以及信号处理单元，用于处理转换的信号并检测目标，其中在与模数转换的采样频率同步的定时切换要发射的发送无线电波的发送频率，发送频率根据频带内的任意图形被切换，并且接收信号在发送时基于任意模式依次重新排列，然后进行雷达信号处理。

49. 发明授权

US08138611B2 Semiconductor device having shifted stacked chips 有权
标题翻译：半导体器件已经移位了堆叠的芯片
公开(公告)号：US08138611B2
公开(公告)日：2012-03-20
申请号：US12780395
申请日：2010-05-14
申请人： Hiroshi Kuroda , Katsuhiko Hashizume
发明人： Hiroshi Kuroda , Katsuhiko Hashizume
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L25/0657 , H01L24/06 , H01L24/48 , H01L24/49 , H01L24/80 , H01L24/83 , H01L24/85 , H01L2224/05553 , H01L2224/05554 , H01L2224/05599 , H01L2224/32145 , H01L2224/48091 , H01L2224/48137 , H01L2224/48145 , H01L2224/48227 , H01L2224/49113 , H01L2224/4917 , H01L2224/49171 , H01L2224/4918 , H01L2224/83121 , H01L2224/85399 , H01L2225/06506 , H01L2225/0651 , H01L2225/06586 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/01082 , H01L2924/14 , H01L2924/181 , H01L2224/78 , H01L2224/45099 , H01L2924/00 , H01L2924/00012
摘要： A first semiconductor chip and a second semiconductor chip which form a stack are mounted on a module substrate by deflecting a center position of the semiconductor chips from the module substrate. In the side where the distance from the edge of the deflected semiconductor chip to the edge of a module substrate is shorter, the electrode pad on the first semiconductor chip and the electrode pad on the second semiconductor chip are directly connected with a wire. In the side where the distance from the edge of the deflected semiconductor chip to the edge of a module substrate is longer, the electrode pad on the first semiconductor chip and the electrode pad on the second semiconductor chip are combined with the corresponding bonding lead on the module substrate with a wire.
摘要翻译：通过使半导体芯片的中心位置偏离模块基板，形成堆叠的第一半导体芯片和第二半导体芯片安装在模块基板上。在偏转的半导体芯片的边缘到模块基板的边缘的距离较短的一侧，第一半导体芯片上的电极焊盘和第二半导体芯片上的电极焊盘与导线直接连接。在从偏转的半导体芯片的边缘到模块基板的边缘的距离较长的一侧，第一半导体芯片上的电极焊盘和第二半导体芯片上的电极焊盘与相应的焊接引线带有线的模块基板。

50. 发明授权

US07858809B2 Process for production of pyrazole-fused ring derivatives 失效
标题翻译：吡唑稠环衍生物的制备方法
公开(公告)号：US07858809B2
公开(公告)日：2010-12-28
申请号：US11578134
申请日：2005-04-08
申请人： Shigeto Negi , Toshikazu Shimizu , Hiroshi Kuroda , Naoyuki Shimomura , Manabu Sasho , Yorihisa Hoshino , Manabu Kuboto
发明人： Shigeto Negi , Toshikazu Shimizu , Hiroshi Kuroda , Naoyuki Shimomura , Manabu Sasho , Yorihisa Hoshino , Manabu Kuboto
IPC分类号： C07D231/54
CPC分类号： C07D471/04
摘要： Intermediates useful for the synthesis of pyrazole-fused ring derivatives, such as 7-phenylpyrazolo [1,5-a]pyridine derivatives, and method for producing the same. Method for producing compound represented by the general formula (II), wherein Z1 and Z2 each independently represents a methine group or a nitrogen atom; Rl represents an ethyl group or the like; R5 represents a hydrogen atom or the like; R2 and R3 each independently represents a C1-6 alkyl group or the like, salts thereof, or solvates of both, comprising the step of: reacting a compound represented by the general formula (I), wherein Z1, Z2, R5, R1, R2 and R3 each has the same definition as described above, with an organometallic reagent; and then reacting the resulting product with pentafluoroiodobenzene.
摘要翻译：用于合成吡唑稠合环衍生物如7-苯基吡唑并[1,5-a]吡啶衍生物的中间体及其制备方法。制备由通式（II）表示的化合物的方法，其中Z1和Z2各自独立地表示次甲基或氮原子; R1表示乙基等; R5表示氢原子等; R 2和R 3各自独立地表示C 1-6烷基等，其盐或两者的溶剂合物，包括以下步骤：使通式（I）表示的化合物与其反应，其中Z1，Z2，R5，R1， R2和R3各自具有与上述相同的定义，与有机金属试剂; 然后使所得产物与五氟碘苯反应。

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