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    • 46. 发明授权
    • Semiconductor memory device, semiconductor device, and method for production thereof
    • 半导体存储器件,半导体器件及其制造方法
    • US07432165B2
    • 2008-10-07
    • US11464711
    • 2006-08-15
    • Yuzo FukuzakiHiroshi Takahashi
    • Yuzo FukuzakiHiroshi Takahashi
    • H01L21/336
    • H01L27/10832H01L21/84H01L27/10867H01L27/1203
    • Disclosed are a semiconductor memory device, a semiconductor device, and a method for production thereof. The semiconductor memory device and semiconductor device do not need for a distance for alignment of lithography to make the contact hole with lithography to form the gate electrode. Hence the resulting devices have a reduced area for the cell array. The semiconductor memory device is composed of a substrate having trenches formed side by side, a plate electrode which is formed to a prescribed depth from the surface of the inner wall of the trench, a capacitor insulating film which covers the surface of the inner wall of the trench, a memory node electrode MN which fills the trench, with the capacitor insulating film interposed between them, and a memory node contact plug which is buried in a contact hole which is so made as to reach the memory node electrode from the surface of the semiconductor layer. A metallized region is integrally formed to connect at least part of the surface of the semiconductor layer and at least part of the surface of the contact plug to each other.
    • 公开了半导体存储器件,半导体器件及其制造方法。 半导体存储器件和半导体器件不需要用于光刻对准的距离以通过光刻形成接触孔以形成栅电极。 因此,所得到的器件具有减小的单元阵列的面积。 半导体存储器件由具有并排形成的沟槽的基板,从沟槽的内壁的表面形成规定深度的板电极构成,电容绝缘膜覆盖内壁的内壁的表面 沟槽,填充沟槽的存储器节点电极MN和介于其间的电容器绝缘膜,以及埋入接触孔中的存储器节点接触插塞,所述接触孔被制成从存储器节点电极的表面 半导体层。 金属化区域整体地形成,以将半导体层的表面的至少一部分和接触插塞的表面的至少一部分彼此连接。