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    • 41. 发明授权
    • Liquid crystal display panel and fabricating method thereof
    • 液晶显示面板及其制造方法
    • US07470932B2
    • 2008-12-30
    • US11715889
    • 2007-03-09
    • Soon Sung YooYoun Gyoung ChangHeung Lyul Cho
    • Soon Sung YooYoun Gyoung ChangHeung Lyul Cho
    • H01L29/04
    • H01L27/1288G02F1/133707G02F1/13394G02F1/13458G02F2001/136231H01L27/1214
    • A liquid crystal display (LCD) panel is fabricated in a simplified process. The LCD panel includes a thin film transistor (TFT) array substrate with a gate and data lines crossing each other to define a pixel area, a TFT at the crossings of the gate and data lines, a protective film, and a pixel electrode connected to the TFT and formed within a pixel opening that is arranged at the pixel area and formed through the protective film and a gate insulating film. A color filter array substrate is joined to the TFT array substrate. A pattern spacer is between the TFT and color filter array substrate and overlaps at least one of the gate line, the data line, and the thin film transistor. A rib is formed from the same layer as the pattern spacer and overlaps the pixel electrode. Liquid crystal material is provided within the LCD panel.
    • 以简化的工艺制造液晶显示器(LCD)面板。 LCD面板包括薄膜晶体管(TFT)阵列基板,栅极和数据线彼此交叉以限定像素区域,在栅极和数据线的交叉处的TFT,保护膜和连接到 TFT形成在像素区域内,并形成在像素区域并形成在保护膜和栅极绝缘膜上的像素开口内。 滤色器阵列基板连接到TFT阵列基板。 图案间隔物位于TFT和滤色器阵列基板之间,并与栅极线,数据线和薄膜晶体管中的至少一个重叠。 肋由与图案间隔物相同的层形成,并且与像素电极重叠。 液晶材料设置在LCD面板内。
    • 44. 发明授权
    • Thin film transistor substrate of fringe field switching type and fabricating method thereof
    • 边缘场开关型薄膜晶体管基板及其制造方法
    • US07528918B2
    • 2009-05-05
    • US11256092
    • 2005-10-24
    • Soon Sung YooYoun Gyoung ChangHeung Lyul Cho
    • Soon Sung YooYoun Gyoung ChangHeung Lyul Cho
    • G02F1/1343
    • G02F1/134363G02F2001/134372G02F2001/13629
    • A fringe field switching type thin film transistor substrate includes a double layered structure gate line; a data line crossing the gate line, wherein a gate insulating film is formed therebetween; a thin film transistor having a gate electrode connected to the gate line, a source electrode connected to the data line, and a drain electrode opposing the source electrode; a double layered structure common line parallel to the gate line; a common electrode plate integrated with the transparent conductive layer of the common line and formed in a pixel area defined by the crossing of the gate line and the data line; a pixel electrode slit covering the drain electrode of the thin film transistor and overlapping the common electrode plate, wherein the gate insulating film is formed therebetween in the pixel area; and a data protection pattern covering the data line and the source electrode.
    • 条纹场开关型薄膜晶体管基板包括双层结构栅极线; 与栅极线交叉的数据线,其间形成有栅极绝缘膜; 薄膜晶体管,具有连接到栅极线的栅电极,连接到数据线的源电极和与源电极相对的漏电极; 平行于栅极线的双层结构公共线; 与公共线的透明导电层集成并形成在由栅极线与数据线的交叉限定的像素区域中的公共电极板; 覆盖所述薄膜晶体管的漏电极且与所述公共电极板重叠的像素电极狭缝,其中,在所述像素区域中形成所述栅极绝缘膜; 以及覆盖数据线和源电极的数据保护图案。
    • 46. 发明授权
    • Manufacturing method of a thin film transistor array substrate
    • 薄膜晶体管阵列基板的制造方法
    • US07078279B2
    • 2006-07-18
    • US10950493
    • 2004-09-28
    • Soon Sung YooHeung Lyul Cho
    • Soon Sung YooHeung Lyul Cho
    • H01L21/336H01L29/41G02F1/1343
    • G02F1/13458G02F1/1368G02F2001/136231G02F2201/50H01L27/12H01L27/124H01L27/1288Y10S438/951
    • A method of manufacturing a thin film transistor capable of simplifying a substrate structure and a manufacturing process is disclosed. The method of manufacturing a thin film transistor array substrate includes involves a three-round mask process, which includes: forming a gate pattern on a substrate; forming a gate insulating film on the substrate having the gate pattern thereon; forming a source/drain pattern and a semiconductor pattern; forming a passivation film to protect the thin film transistor on an entire surface of the substrate; forming a photo-resist pattern on the passivation film; patterning the passivation film using the photo-resist pattern to form a passivation film pattern; and forming a transparent electrode pattern being extended from a lateral surface of the passivation film pattern and formed at an area except for the passivation film pattern.
    • 公开了一种能够简化衬底结构和制造工艺的制造薄膜晶体管的方法。 制造薄膜晶体管阵列基板的方法包括三向掩模工艺,其包括:在基板上形成栅极图案; 在其上具有栅极图案的衬底上形成栅极绝缘膜; 形成源极/漏极图案和半导体图案; 形成钝化膜,以在衬底的整个表面上保护薄膜晶体管; 在钝化膜上形成光刻胶图案; 使用光致抗蚀剂图案来图案化钝化膜以形成钝化膜图案; 以及形成从钝化膜图案的侧表面延伸并形成在除了钝化膜图案之外的区域的透明电极图案。
    • 49. 发明授权
    • Shadow mask and manufacturing method thereof
    • 荫罩及其制造方法
    • US08007967B2
    • 2011-08-30
    • US11475110
    • 2006-06-27
    • Soon Sung YooOh Nam Kwon
    • Soon Sung YooOh Nam Kwon
    • H01J29/07
    • H05B33/10
    • Disclosed is a shadow mask having a fine slit that can improve precision and resolution of a pattern by reducing side etching during an etching process of a mask substrate, and a manufacturing method thereof. The shadow mask includes a mask substrate, a slit region formed by penetrating through the mask substrate, the slit region having a plurality of undercut portions at respective sides thereof, each undercut portion having a unit thickness, and a shadow region provided in the mask substrate, the shadow region corresponding to a region other than the slit region.
    • 公开了一种荫罩,其具有能够通过在掩模基板的蚀刻处理期间减少侧蚀刻而提高图案的精度和分辨率的细小狭缝及其制造方法。 荫罩包括掩模基板,穿过掩模基板形成的狭缝区域,狭缝区域各自具有多个底切部分,每个底切部分具有单位厚度,以及设置在掩模基板中的阴影区域 ,对应于除狭缝区域以外的区域的阴影区域。