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41. 发明申请

US20120326103A1 FUNCTIONALIZED TRIPLET EMITTERS FOR ELECTRO-LUMINESCENT DEVICES 审中-公开
标题翻译：用于电致发光器件的功能性三极管发射体
公开(公告)号：US20120326103A1
公开(公告)日：2012-12-27
申请号：US13512111
申请日：2010-11-26
申请人： Shuk Kwan Mak , Wai Kin Chan , Tobias Fischer , Hartmut Yersin
发明人： Shuk Kwan Mak , Wai Kin Chan , Tobias Fischer , Hartmut Yersin
IPC分类号： C07F15/00 , F21V9/00 , C09K11/06
CPC分类号： C07F15/0033 , C09K11/06 , C09K2211/185 , H01L51/0061 , H01L51/0085 , H01L51/0095 , H01L51/5016 , H05B33/14 , Y02E10/549
摘要： Organo-metallic complexes for opto-electronic and sensory devices and their use in such devices are provided. The organo-metallic complex (triplet emitter) consists of a metal center and chelate ligands. At least one of chelate ligands comprises an aromatic or fused aromatic ring(s). Each ligand is covalently substituted with at least one, preferably two charge transport groups (ctg). The metal center can be coordinated by a spectator ligand. Presence of two ctgs at each ligand is advantageous for applications in organic light emitting diodes (OLEDs). Charge transport units facilitate hole and/or electron transport to the molecular center and allow for efficient exciton formation directly on the complex. Presence of ctgs on each ligand provides good shielding with respect to interactions with the environment. Emission quenching is strongly reduced and materials with high emission quantum yields are obtained. Presence of ctgs on each ligand reduces undesired quenching by triplet-triplet annihilation or self-quenching effects.
摘要翻译：提供了用于光电和感官装置的有机金属配合物及其在这些装置中的应用。有机金属络合物（三线态发射体）由金属中心和螯合配体构成。至少一种螯合配体包括芳族或稠合芳环。每个配体被至少一个，优选两个电荷转运基团（ctg）共价取代。金属中心可由旁观者配体协调。在每个配体上存在两个ctg对于在有机发光二极管（OLED）中的应用是有利的。电荷传输单元促进空穴和/或电子传递到分子中心，并允许在复合物上直接形成有效的激子。每个配体上的ctgs的存在在与环境的相互作用方面提供良好的屏蔽。发射猝灭强烈降低，并获得具有高发射量子产率的材料。每个配体上的ctgs存在通过三重态三重态湮灭或自熄效应减少不期望的猝灭。

42. 发明授权

US08115379B2 Use of metal complexes as emitter in an organic light-emitting component and such a component 有权
标题翻译：在有机发光组分和这种组分中使用金属络合物作为发射体
公开(公告)号：US08115379B2
公开(公告)日：2012-02-14
申请号：US12159520
申请日：2006-12-22
申请人： Horst Hartmann , Hartmut Yersin
发明人： Horst Hartmann , Hartmut Yersin
IPC分类号： H01L51/50 , C07F15/00
CPC分类号： C09K11/06 , C09K2211/1029 , C09K2211/1092 , C09K2211/185 , H01L51/0083 , H01L51/0084 , H01L51/0085 , H01L51/0086 , H01L51/0087 , H01L51/0088 , H01L51/5016 , H05B33/14
摘要： Electronic components are provided that include a metal complex containing 2-(3-thienyl)-pyridine ligands. The metal complex may be used as a triplet emitter, and the electronic components include organic light-emitting diodes (OLEDs). The OLEDs may contain 2-20% of the metal complex, by weight.
摘要翻译：提供包括含有2-（3-噻吩基） - 吡啶配体的金属络合物的电子元件。金属络合物可以用作三线态发射体，并且电子部件包括有机发光二极管（OLED）。 OLED可以含有2-20重量％的金属络合物。

43. 发明申请

US20090318698A1 Use of Metal Complexes as Emitter in an Organic Light-Emitting Component and such a Component 有权
标题翻译：在有机发光组件和这种组分中使用金属络合物作为发射体
公开(公告)号：US20090318698A1
公开(公告)日：2009-12-24
申请号：US12159520
申请日：2006-01-24
申请人： Horst Hartmann , Hartmut Yersin
发明人： Horst Hartmann , Hartmut Yersin
IPC分类号： C07F15/00
CPC分类号： C09K11/06 , C09K2211/1029 , C09K2211/1092 , C09K2211/185 , H01L51/0083 , H01L51/0084 , H01L51/0085 , H01L51/0086 , H01L51/0087 , H01L51/0088 , H01L51/5016 , H05B33/14
摘要： A HEMT device including a GaN channel structure including a very thin (Al, In, Ga)N subchannel layer (14) that is disposed between a first GaN channel layer (12) and a second GaN channel layer (16), to effect band bending induced from the piezoelectric and spontaneous charges associated with the (Al, In, Ga)N subchannel layer. This GaN channel/(Al, In, Ga)N subchannel arrangement effectively disperses the 2DEG throughout the channel of the device, thereby rendering the device more linear in character (relative to a corresponding device lacking the subchannel (Al5In3Ga)N sub-layer), without substantial loss of electron mobility.
摘要翻译：包括设置在第一GaN沟道层（12）和第二GaN沟道层（16）之间的非常薄（Al，In，Ga）N子沟道层（14）的GaN沟道结构的HEMT器件，以实现带由与（Al，In，Ga）N子通道层相关联的压电和自发电荷引起的弯曲。该GaN沟道/（Al，In，Ga）N子通道布置有效地将2DEG分散在器件的整个通道中，从而使器件的性质更加线性（相对于缺少子沟道（Al5In3Ga）N子层的相应器件），没有电子迁移率的实质损失。

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