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41. 发明申请

US20070296016A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20070296016A1
公开(公告)日：2007-12-27
申请号：US11769423
申请日：2007-06-27
申请人： Hajime Nagano , Takeo Furuhata
发明人： Hajime Nagano , Takeo Furuhata
IPC分类号： H01L29/76 , H01L21/8234
CPC分类号： H01L27/115 , H01L27/11521
摘要： A semiconductor device including a semiconductor substrate; an element isolation region having a trench filled with an insulating film defined or the semiconductor substrate; a memory cell transistor formed in an element forming region isolated by the element isolating regions of the semiconductor substrate; and the memory cell transistor includes a gate insulating film formed on a surface of the element forming region; a floating gate formed over the gate insulating film; an inter-gate insulating film formed integrally so as to cover the floating gate and the insulating film of the element isolation region and having high dielectric constant in a portion corresponding to the floating gate and low dielectric constant in a portion corresponding to the insulating film of the element isolation region; and a control gate stacked over the floating gate via the inter-gate insulating film.
摘要翻译：一种半导体器件，包括半导体衬底; 元件隔离区域，其具有填充有限定的绝缘膜的沟槽或半导体衬底; 形成在由所述半导体衬底的元件隔离区隔离的元件形成区域中的存储单元晶体管; 并且所述存储单元晶体管包括形成在所述元件形成区域的表面上的栅极绝缘膜; 形成在栅绝缘膜上的浮栅; 一体地形成栅绝缘膜，以覆盖元件隔离区域的浮栅和绝缘膜，并且在对应于浮栅的部分和低介电常数的部分中具有高介电常数元件隔离区; 以及通过栅极间绝缘膜堆叠在浮置栅极上的控制栅极。

42. 发明申请

US20060110304A1 Wet gas purification method and system for practicing the same 有权
标题翻译：湿气净化方法和系统实践相同
公开(公告)号：US20060110304A1
公开(公告)日：2006-05-25
申请号：US10523679
申请日：2003-08-06
申请人： Masahiro Harada , Shintaro Honjo , Makoto Susaki , Kazuo Ishida , Hajime Nagano , Susumu Okino
发明人： Masahiro Harada , Shintaro Honjo , Makoto Susaki , Kazuo Ishida , Hajime Nagano , Susumu Okino
IPC分类号： B01D53/58
CPC分类号： C10K1/101 , B01D53/14 , B01D2257/406
摘要： The present invention provides a wet gas purification method in which ammonia in the gas is removed, and a system for carrying out said method, characterized in that the method includes a washing step in which ammonia in the gas is absorbed in an absorbent for removal; and an ammonia treating step in which ammonia is stripped from the discharged absorbent at a following stage of the washing step, wherein the absorbent is divided into an off-gas containing ammonia and effluent. In the washing step makeup water is charged continuously or intermittently so that the concentration of ammonia in the gas having passed through the washing step is 10 ppm or lower. According to the present invention, a wet gas purification method can be performed in which the running costs involved in operation is reduced, the manipulation step and system are simple, operation is easy, and the reliability is high.
摘要翻译：本发明提供一种其中除去气体中的氨的湿气净化方法，以及用于实施所述方法的系统，其特征在于，所述方法包括洗涤步骤，其中所述气体中的氨被吸收剂吸收除去; 以及在洗涤步骤的后续阶段从排出的吸收剂中除去氨的氨处理步骤，其中吸收剂被分成含有氨和废水的废气。在洗涤步骤中，连续地或间歇地加入水，使得通过洗涤步骤的气体中的氨浓度为10ppm以下。根据本发明，可以进行操作中涉及的运行成本降低的操作步骤和系统简单，操作容易，可靠性高的湿气净化方法。

43. 发明授权

US07005115B2 Gas combustion treatment method and apparatus therefor 有权
公开(公告)号：US07005115B2
公开(公告)日：2006-02-28
申请号：US10245326
申请日：2002-09-18
申请人： Masahiro Harada , Makoto Susaki , Kazuo Ishida , Hajime Nagano , Masahiro Hirano , Hiroshi Suzumura , Shintaro Honjo , Yoshinori Koyama , Katsuhiko Yokohama , Mitsugi Suehiro
发明人： Masahiro Harada , Makoto Susaki , Kazuo Ishida , Hajime Nagano , Masahiro Hirano , Hiroshi Suzumura , Shintaro Honjo , Yoshinori Koyama , Katsuhiko Yokohama , Mitsugi Suehiro
IPC分类号： C01B17/16 , C01B31/20 , C01B21/00
CPC分类号： B01D53/58 , B01D53/52 , F23G7/065 , F23J7/00 , F23J15/006 , F23J2215/10
摘要： A gas combustion treatment method for the combustion treatment of an ammonia-containing gas and a hydrogen sulfide-containing gas, the method comprising a first combustion treatment step in which the ammonia-containing gas, together with a fuel, is introduced and burned; a nitrogen oxide reduction step downstream of the first combustion treatment step, in which a portion of the hydrogen sulfide-containing gas or the ammonia-containing gas is introduced and the nitrogen oxides produced in the first combustion treatment step are reduced in a reducing atmosphere; and a second combustion treatment step downstream of the nitrogen oxide reduction step, in which the remaining hydrogen sulfide-containing gas, together with air, is introduced and burned. The present invention provides a combustion apparatus suitable for use as a combustion furnace for off-gases resulting from the wet purification of coal gasification gas.

44. 发明授权

US07561859B2 Wireless communication terminal, transmission control method, and computer program 有权
标题翻译：无线通信终端，传输控制方法和计算机程序
公开(公告)号：US07561859B2
公开(公告)日：2009-07-14
申请号：US11536511
申请日：2006-09-28
申请人： Hajime Nagano
发明人： Hajime Nagano
IPC分类号： H04B1/04
CPC分类号： G06F1/206
摘要： A wireless communication terminal includes a transmitting unit transmitting data to a wireless base station, a temperature detecting unit detecting a terminal temperature of the inside of the wireless communication terminal, a transmission power detecting unit detecting a transmission power, a memory unit storing plural sets of terminal temperature variation information, and a control unit changing the transmission power based on a state of communication with a wireless base station. The control unit selects and reads one of the plural sets of terminal temperature variation information from a memory unit, based on an ambient temperature, a transmission power, and a changed one of predetermined transmission powers. The control unit controls the transmission state of the data based on the selected one of the plural sets of terminal temperature variation information, so as to prevent the terminal temperature from increasing over an upper limit of a predetermined operation guarantee temperature range.
摘要翻译：无线通信终端包括向无线基站发送数据的发送单元，检测无线通信终端内部的终端温度的温度检测单元，检测发送功率的发送功率检测单元，存储多个端子温度变化信息，以及控制单元，基于与无线基站的通信状态来改变发送功率。控制单元基于环境温度，发送功率和预定发送功率的改变中的一个，从存储单元中选择并读取多组终端温度变化信息中的一组。控制单元基于所选择的多组终端温度变化信息来控制数据的传输状态，以防止终端温度超过预定操作保证温度范围的上限。

45. 发明申请

US20080211006A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US20080211006A1
公开(公告)日：2008-09-04
申请号：US11965297
申请日：2007-12-27
申请人： Tomoharu HASHIGUCHI , Hajime Nagano
发明人： Tomoharu HASHIGUCHI , Hajime Nagano
IPC分类号： H01L27/115 , H01L21/28
CPC分类号： H01L27/115 , H01L27/11521 , H01L27/11524
摘要： A nonvolatile semiconductor memory including a semiconductor substrate having an upper surface; a plurality of memory cell transistors formed in the semiconductor substrate, each memory cell transistor including a gate electrode having a gate insulating layer on the upper surface of the semiconductor substrate, a floating gate electrode layer on the gate insulating layer, an inter-gate insulating layer on the floating gate electrode layer, and a control gate electrode layer on the inter-gate insulating layer; a first oxide-based insulating film formed above the upper surface of the semiconductor substrate between the gate electrodes, and including an upper surface as high or higher than that of the floating gate electrode layer but lower than that of the control gate electrode layer; a nitride-based insulating film containing boron formed on the first oxide-based insulating film and the control gate layer; and a second oxide-based insulating film formed on the nitride-based insulating film.
摘要翻译：一种非易失性半导体存储器，包括具有上表面的半导体衬底; 形成在半导体衬底中的多个存储单元晶体管，每个存储单元晶体管包括在半导体衬底的上表面上具有栅极绝缘层的栅极电极，栅极绝缘层上的浮置栅极电极层，栅极间绝缘层在栅极绝缘层上的控制栅极电极层，第一氧化物基绝缘膜，形成在栅电极之间的半导体衬底的上表面上方，并且包括高于浮栅电极层的上表面或高于控制栅电极层的上表面的上表面; 含有形成在第一氧化物系绝缘膜和控制栅极层上的硼的氮化物系绝缘膜; 以及形成在所述氮化物系绝缘膜上的第二氧化物系绝缘膜。

46. 发明授权

US07381389B2 Wet gas purification method and system for practicing the same 有权
标题翻译：湿气净化方法和系统实践相同
公开(公告)号：US07381389B2
公开(公告)日：2008-06-03
申请号：US10523679
申请日：2003-08-06
申请人： Masahiro Harada , Shintaro Honjo , Makoto Susaki , Kazuo Ishida , Hajime Nagano , Susumu Okino
发明人： Masahiro Harada , Shintaro Honjo , Makoto Susaki , Kazuo Ishida , Hajime Nagano , Susumu Okino
IPC分类号： B01D53/58 , B01J10/00
CPC分类号： C10K1/101 , B01D53/14 , B01D2257/406
摘要： A wet gas purification method is provided for removing ammonia from a heavy oil gasification gas, such as coal. The method principally involves a washing step during which absorbent is charged into the gas to absorb ammonia and an ammonia treating step wherein absorbent discharged from the washing step is separated into an effluent and an off-gas containing ammonia. The amount of absorbent charged during the washing step is controlled such that the ammonia concentration of gas exiting the washing step is 10 ppm or less.
摘要翻译：提供湿气净化方法，用于从重油气化气体如煤中除去氨。该方法主要涉及洗涤步骤，在该步骤中将吸收剂装入气体中以吸收氨和氨处理步骤，其中将从洗涤步骤排出的吸收剂分离成流出物和含有氨的废气。控制在洗涤步骤中加入的吸收剂的量使得离开洗涤步骤的气体的氨浓度为10ppm以下。

47. 发明申请

US20060270246A1 Method of manufacturing a semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20060270246A1
公开(公告)日：2006-11-30
申请号：US11414359
申请日：2006-05-01
申请人： Hajime Nagano
发明人： Hajime Nagano
IPC分类号： H01L21/31
CPC分类号： C23C16/481 , C23C16/52 , C23C16/54 , H01L22/12
摘要： A method of manufacturing a semiconductor device, includes preparing a film formation system including a film formation furnace and a heater heating a work piece placed in the furnace via a furnace wall of the furnace, acquiring a correlation between a first information value relevant to a thickness of a deposition film deposited using the film formation system and a second information value based on an adhesion film adhered to the furnace wall with respect to each kind of deposition film, adjusting a deposition condition of a deposition film to be deposited on a work piece based on the correlation, and depositing a deposition film on a work piece under the adjusted deposition condition.
摘要翻译：一种制造半导体器件的方法，包括制备成膜系统，其包括成膜炉和加热通过炉的炉壁放置在炉中的工件的加热器，获得与厚度相关的第一信息值之间的相关性使用成膜系统沉积的沉积膜和相对于每种沉积膜粘附到炉壁上的粘合膜的第二信息值，调整沉积在工件上的沉积膜的沉积条件并且在调整后的沉积条件下将沉积膜沉积在工件上。

48. 发明授权

US07095081B2 Semiconductor device and manufacturing method thereof 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07095081B2
公开(公告)日：2006-08-22
申请号：US11331316
申请日：2006-01-13
申请人： Takashi Yamada , Hajime Nagano , Takeshi Hamamoto
发明人： Takashi Yamada , Hajime Nagano , Takeshi Hamamoto
IPC分类号： H01L27/01 , H01L27/12 , H01L31/0392 , H01L29/00
CPC分类号： H01L21/823412 , H01L21/76264 , H01L21/823437 , H01L21/823481 , H01L21/84 , H01L27/105 , H01L27/10897 , H01L27/11526 , H01L27/11534 , H01L27/1203 , H01L27/1207 , H01L29/7841
摘要： A semiconductor device includes a substrate having first to fourth regions, a first insulating film formed on the substrate in the first region, a first epitaxial layer formed on the substrate in the second region and having an upper surface higher than an upper surface of the first insulating film, a first semiconductor layer formed on the first insulating film with a space provided with respect to the first epitaxial layer and having an upper surface set at substantially the same height as the upper surface of the first epitaxial layer, and an element isolation insulating film formed in the space and having an upper surface set at substantially the same height as the upper surface of the first epitaxial layer and the upper surface of the first semiconductor layer.
摘要翻译：半导体器件包括具有第一至第四区域的衬底，在第一区域中的衬底上形成的第一绝缘膜，形成在第二区域中的衬底上并具有高于第一区域的上表面的上表面的第一外延层绝缘膜，形成在所述第一绝缘膜上的第一半导体层，其具有相对于所述第一外延层设置的空间，并且具有设置在与所述第一外延层的上表面基本相同的高度的上表面;以及元件隔离绝缘膜膜形成在该空间中，并且具有设置在与第一外延层的上表面和第一半导体层的上表面大致相同高度的上表面。

49. 发明授权

US07075169B2 Semiconductor device having a hollow region and method of manufacturing the same 失效
标题翻译：具有中空区域的半导体器件及其制造方法
公开(公告)号：US07075169B2
公开(公告)日：2006-07-11
申请号：US10654030
申请日：2003-09-04
申请人： Yoshihiro Minami , Takashi Yamada , Yusuke Kohyama , Tsutomu Sato , Hajime Nagano
发明人： Yoshihiro Minami , Takashi Yamada , Yusuke Kohyama , Tsutomu Sato , Hajime Nagano
IPC分类号： H01L29/72
CPC分类号： H01L21/76289 , H01L21/764 , H01L21/84 , H01L27/0617 , H01L27/08 , H01L27/1203 , H01L29/0657
摘要： A hollow region is formed in a silicon substrate. A plurality of openings formed in the silicon layer on the hollow region is filled with a buried film. The bottom portion of the hollow region is formed with a plurality of silicon pillars, which support the silicon layer.
摘要翻译：在硅衬底中形成中空区域。形成在中空区域上的硅层中的多个开口填充有掩埋膜。中空区域的底部形成有支撑硅层的多个硅柱。

50. 发明申请

US20050045951A1 Semiconductor device and manufacturing method thereof 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050045951A1
公开(公告)日：2005-03-03
申请号：US10699676
申请日：2003-11-04
申请人： Takashi Yamada , Hajime Nagano , Takeshi Hamamoto
发明人： Takashi Yamada , Hajime Nagano , Takeshi Hamamoto
IPC分类号： H01L21/76 , H01L21/762 , H01L21/8234 , H01L21/8247 , H01L21/84 , H01L27/01 , H01L27/08 , H01L27/088 , H01L27/10 , H01L27/115 , H01L27/12 , H01L29/788 , H01L29/792
CPC分类号： H01L21/823412 , H01L21/76264 , H01L21/823437 , H01L21/823481 , H01L21/84 , H01L27/105 , H01L27/10897 , H01L27/11526 , H01L27/11534 , H01L27/1203 , H01L27/1207 , H01L29/7841
摘要： A semiconductor device includes a substrate having first to fourth regions, a first insulating film formed on the substrate in the first region, a first epitaxial layer formed on the substrate in the second region and having an upper surface higher than an upper surface of the first insulating film, a first semiconductor layer formed on the first insulating film with a space provided with respect to the first epitaxial layer and having an upper surface set at substantially the same height as the upper surface of the first epitaxial layer, and an element isolation insulating film formed in the space and having an upper surface set at substantially the same height as the upper surface of the first epitaxial layer and the upper surface of the first semiconductor layer.
摘要翻译：半导体器件包括具有第一至第四区域的衬底，在第一区域中的衬底上形成的第一绝缘膜，形成在第二区域中的衬底上并具有高于第一区域的上表面的上表面的第一外延层绝缘膜，形成在所述第一绝缘膜上的第一半导体层，其具有相对于所述第一外延层设置的空间，并且具有设置在与所述第一外延层的上表面基本相同的高度的上表面;以及元件隔离绝缘膜膜形成在该空间中，并且具有设置在与第一外延层的上表面和第一半导体层的上表面大致相同高度的上表面。

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