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41. 发明授权

US07268044B2 Non-volatile electromechanical field effect devices and circuits using same and methods of forming same 有权
公开(公告)号：US07268044B2
公开(公告)日：2007-09-11
申请号：US11541834
申请日：2006-10-02
申请人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal , Bernhard Vogeli , Darren K. Brock , Venkatachalam C. Jaiprakash
发明人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal , Bernhard Vogeli , Darren K. Brock , Venkatachalam C. Jaiprakash
IPC分类号： H01L21/336 , H01L21/8234
CPC分类号： H01L29/78 , B82Y10/00 , B82Y99/00 , G11C7/065 , G11C13/025 , G11C16/0416 , G11C17/16 , G11C17/165 , G11C23/00 , G11C2213/16 , G11C2213/17 , G11C2213/79 , H01H1/0094 , H01L27/10 , H01L27/1052 , H01L27/112 , H01L27/11206 , H01L27/115 , H01L27/286 , H01L29/0665 , H01L29/0673 , H01L29/42324 , H01L51/0048 , H01L51/0052 , H01L51/0508 , Y10S977/708 , Y10S977/724 , Y10S977/742 , Y10S977/762 , Y10S977/936 , Y10S977/938 , Y10S977/94 , Y10S977/943
摘要： Under one aspect, a field effect device includes a gate, a source, and a drain, with a conductive channel between the source and the drain; and a nanotube switch having a corresponding control terminal, said nanotube switch being positioned to control electrical conduction through said conductive channel. Under another aspect, a field effect device includes a gate having a corresponding gate terminal; a source having a corresponding source terminal; a drain having a corresponding drain terminal; a control terminal; and a nanotube switching element positioned between one of the gate, source, and drain and its corresponding terminal and switchable, in response to electrical stimuli at the control terminal and at least one of the gate, source, and drain terminals, between a first non-volatile state that enables current flow between the source and the drain and a second non-volatile state that disables current flow between the source and the drain.

42. 发明授权

US07075141B2 Four terminal non-volatile transistor device 有权
标题翻译：四端子非易失性晶体管器件
公开(公告)号：US07075141B2
公开(公告)日：2006-07-11
申请号：US10811191
申请日：2004-03-26
申请人： Thomas Rueckes , Brent M. Segal , Bernard Vogeli , Darren K. Brock , Venkatachalam C. Jaiprakash , Claude L. Bertin
发明人： Thomas Rueckes , Brent M. Segal , Bernard Vogeli , Darren K. Brock , Venkatachalam C. Jaiprakash , Claude L. Bertin
IPC分类号： H01L27/10 , H01L29/788
CPC分类号： G11C23/00 , B82Y10/00 , G11C13/025 , G11C16/0416 , G11C2213/17 , H01L27/115 , H01L29/7881 , Y10S977/708 , Y10S977/932
摘要： A four terminal non-volatile transistor device. A non-volatile transistor device includes a source region and a drain region of a first semiconductor type of material and each in electrical communication with a respective terminal. A channel region of a second semiconductor type of material is disposed between the source and drain region. A floating gate structure is made of at least one of semiconductive or conductive material and is disposed over the channel region. A control gate is made of at least one of semiconductive or conductive material and is in electrical communication with a respective terminal. An electromechanically-deflectable nanotube switching element is in electrical communication with one of the floating gate structure and the control gate structure, and is positioned to be electromechanically deflectable into contact with the other of the floating gate structure and the control gate structure. When the nanotube switching element is in communication with both the control gate and the floating gate, the control gate may be used to modulate the conductivity of the channel region. The nanotube switching element may be formed from a porous fabric of a monolayer of single-walled carbon nanotubes. Under certain embodiments, the nanotube article is suspended vertically in relation to the horizontal substrate. Under certain embodiments, a release gate and release node are positioned in spaced relation to the nanotube switching element, and, in response to a signal on the release node, the release gate electromechanically deflects the nanotube switching element out of contact with the one of the control gate and floating gate. Under certain embodiments, the contact between the nanotube switching element and the one of the control gate and floating gate is a non-volatile state. Under certain embodiments, the device occupies an area of 8F2.
摘要翻译：四端非易失性晶体管器件。非挥发性晶体管器件包括第一半导体类型的材料的源极区域和漏极区域，并且各自与相应的端子电连通。第二半导体类型的材料的沟道区域设置在源区和漏区之间。浮栅结构由半导体或导电材料中的至少一种制成，并且设置在沟道区域上。控制门由半导体或导电材料中的至少一种制成，并与相应的端子电连通。机电可偏转的纳米管开关元件与浮动栅极结构和控制栅极结构中的一个电连通，并且被定位成机电可偏转地与浮动栅极结构和控制栅极结构中的另一个接触。当纳米管开关元件与控制栅极和浮置栅极两者连通时，控制栅极可用于调制沟道区的导电性。纳米管切换元件可以由单壁碳纳米管单层的多孔织物形成。在某些实施例中，纳米管制品相对于水平基底垂直悬挂。在某些实施例中，释放栅极和释放节点以与纳米管开关元件隔开的关系定位，并且响应于释放节点上的信号，释放门电磁机械地使纳米管开关元件偏转与控制门和浮动门。在某些实施例中，纳米管开关元件与控制栅极和浮置栅极之间的接触是非易失性状态。在某些实施例中，该装置占据8F 2的面积。

43. 发明授权

US09911743B2 Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same 有权
公开(公告)号：US09911743B2
公开(公告)日：2018-03-06
申请号：US11835852
申请日：2007-08-08
申请人： Claude L. Bertin , Thomas Rueckes , X. M. Henry Huang , Ramesh Sivarajan , Eliodor G. Ghenciu , Steven L. Konsek , Mitchell Meinhold , Jonathan W. Ward , Darren K. Brock
发明人： Claude L. Bertin , Thomas Rueckes , X. M. Henry Huang , Ramesh Sivarajan , Eliodor G. Ghenciu , Steven L. Konsek , Mitchell Meinhold , Jonathan W. Ward , Darren K. Brock
IPC分类号： H01L27/102 , B82Y10/00 , G11C13/02 , H01L21/822 , H01L27/06 , H01L27/12
CPC分类号： H01L27/1021 , B82Y10/00 , G11C13/025 , G11C2213/19 , G11C2213/71 , G11C2213/72 , H01L21/8221 , H01L27/0688 , H01L27/1203
摘要： Under one aspect, a method of making a nanotube switch includes: providing a substrate having a first conductive terminal; depositing a multilayer nanotube fabric over the first conductive terminal; and depositing a second conductive terminal over the multilayer nanotube fabric, the nanotube fabric having a thickness, density, and composition selected to prevent direct physical and electrical contact between the first and second conductive terminals. In some embodiments, the first and second conductive terminals and the multilayer nanotube fabric are lithographically patterned so as to each have substantially the same lateral dimensions, e.g., to each have a substantially circular or rectangular lateral shape. In some embodiments, the multilayer nanotube fabric has a thickness from 10 nm to 200 nm, e.g., 10 nm to 50 nm. The structure may include an addressable diode provided under the first conductive terminal or deposited over the second terminal.

44. 发明授权

US09196615B2 Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same 有权
标题翻译：非挥发性纳米管二极管和非易失性纳米管块及使用其的系统及其制造方法
公开(公告)号：US09196615B2
公开(公告)日：2015-11-24
申请号：US11835865
申请日：2007-08-08
申请人： Claude L. Bertin , Thomas Rueckes , X. M. Henry Huang , Ramesh Sivarajan , Eliodor G. Ghenciu , Steven L. Konsek , Mitchell Meinhold
发明人： Claude L. Bertin , Thomas Rueckes , X. M. Henry Huang , Ramesh Sivarajan , Eliodor G. Ghenciu , Steven L. Konsek , Mitchell Meinhold
IPC分类号： G11C11/36 , H01L27/102 , B82Y10/00 , G11C13/02 , H01L21/822 , H01L23/525 , H01L27/06 , H01L27/12
CPC分类号： H01L27/1021 , B82Y10/00 , G11C13/025 , G11C2213/19 , H01L21/8221 , H01L23/5256 , H01L27/0688 , H01L27/1203 , H01L2924/0002 , H01L2924/00
摘要： Under one aspect, a nanotube diode includes: a cathode formed of a semiconductor material; and an anode formed of nanotubes. The cathode and anode are in fixed and direct physical contact, and are constructed and arranged such that sufficient electrical stimulus applied to the cathode and the anode creates a conductive pathway between the cathode and the anode. In some embodiments, the anode includes a non-woven nanotube fabric having a plurality of unaligned nanotubes. The non-woven nanotube fabric may have a thickness, e.g., of 0.5 to 20 nm. Or, the non-woven nanotube fabric may include a block of nanotubes. The nanotubes may include metallic nanotubes and semiconducting nanotubes, and the cathode may include an n-type semiconductor material. A Schottky barrier can form between the n-type semiconductor material and the metallic nanotubes and/or a PN junction can form between the n-type semiconductor material and the semiconducting nanotubes.
摘要翻译：在一个方面，纳米管二极管包括：由半导体材料形成的阴极; 和由纳米管形成的阳极。阴极和阳极是固定和直接的物理接触，并被构造和布置成使得施加到阴极和阳极的足够的电刺激在阴极和阳极之间产生导电通路。在一些实施方案中，阳极包括具有多个未对准纳米管的无纺布纳米管织物。无纺布纳米管织物可以具有例如0.5至20nm的厚度。或者，无纺布纳米管织物可以包括纳米管块。纳米管可以包括金属纳米管和半导体纳米管，并且阴极可以包括n型半导体材料。可以在n型半导体材料和金属纳米管之间形成肖特基势垒，和/或在n型半导体材料和半导体纳米管之间形成PN结。

45. 发明授权

US08809917B2 Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks 有权
标题翻译：存储元件和交叉点开关以及使用非易失性纳米管块的阵列
公开(公告)号：US08809917B2
公开(公告)日：2014-08-19
申请号：US12511779
申请日：2009-07-29
申请人： Claude L. Bertin , X. M. Henry Huang , Thomas Rueckes , Ramesh Sivarajan
发明人： Claude L. Bertin , X. M. Henry Huang , Thomas Rueckes , Ramesh Sivarajan
IPC分类号： H01L29/84
CPC分类号： G11C5/063 , B82Y10/00 , G11C13/0002 , G11C13/0021 , G11C13/025 , G11C17/16 , G11C17/165 , G11C2213/19 , G11C2213/77 , G11C2213/79 , H01L27/10 , H01L27/105 , H01L27/1052 , H01L27/112 , H01L29/0665 , H01L29/0669 , H01L29/0673 , H01L51/0048 , H01L51/0591 , Y10S977/943
摘要： Under one aspect, a covered nanotube switch includes: (a) a nanotube element including an unaligned plurality of nanotubes, the nanotube element having a top surface, a bottom surface, and side surfaces; (b) first and second terminals in contact with the nanotube element, wherein the first terminal is disposed on and substantially covers the entire top surface of the nanotube element, and wherein the second terminal contacts at least a portion of the bottom surface of the nanotube element; and (c) control circuitry capable of applying electrical stimulus to the first and second terminals. The nanotube element can switch between a plurality of electronic states in response to a corresponding plurality of electrical stimuli applied by the control circuitry to the first and second terminals. For each different electronic state, the nanotube element provides an electrical pathway of different resistance between the first and second terminals.
摘要翻译：在一个方面，覆盖的纳米管开关包括：（a）包括不对齐的多个纳米管的纳米管元件，所述纳米管元件具有顶表面，底表面和侧表面; （b）与纳米管元件接触的第一和第二端子，其中第一端子设置在并基本上覆盖纳米管元件的整个顶表面，并且其中第二端子接触纳米管的底表面的至少一部分元件; 和（c）能够向第一和第二端子施加电刺激的控制电路。纳米管元件可以响应于由控制电路施加到第一和第二端子的对应的多个电刺激而在多个电子状态之间切换。对于每个不同的电子状态，纳米管元件提供在第一和第二端子之间具有不同电阻的电路径。

46. 发明授权

US07985906B2 Nanotube-based switching elements and logic circuits 有权
标题翻译：基于纳米管的开关元件和逻辑电路
公开(公告)号：US07985906B2
公开(公告)日：2011-07-26
申请号：US12951896
申请日：2010-11-22
申请人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
发明人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
IPC分类号： H03K19/20 , H01L29/84
CPC分类号： H01L29/0665 , B82Y10/00 , G11C13/025 , G11C23/00 , G11C2213/16 , G11C2213/17 , H01H1/0094 , H01H1/027 , H01H2001/0005 , H01L27/28 , H01L29/0673 , H01L29/73 , H01L29/78 , H01L51/0048 , H01L51/0508 , Y10S977/762 , Y10S977/932 , Y10S977/94 , Y10T29/49002
摘要： Nanotube-based switching elements and logic circuits are disclosed. Under one embodiment of the invention, a Boolean logic circuit includes at least one input terminal and an output terminal, and a network of nanotube switching elements electrically disposed between said at least one input terminal and said output terminal. The network of nanotube switching elements effectuates a Boolean function transformation of Boolean signals on said at least one input terminal. The Boolean function transformation includes a Boolean inversion within the function, such as a NOT or NOR function.
摘要翻译：公开了基于纳米管的开关元件和逻辑电路。在本发明的一个实施例中，布尔逻辑电路包括至少一个输入端子和输出端子，以及电气设置在所述至少一个输入端子和所述输出端子之间的纳米管开关元件网络。纳米管切换元件的网络在所述至少一个输入端上实现布尔信号的布尔函数变换。布尔函数变换包括函数内的布尔反转，如NOT或NOR函数。

47. 发明授权

US07855403B2 Hybrid carbon nanotube FET (CNFET)-FET static RAM (SRAM) and method of making same 有权
标题翻译：混合碳纳米管FET（CNFET）-FET静态RAM（SRAM）及其制造方法
公开(公告)号：US07855403B2
公开(公告)日：2010-12-21
申请号：US12569460
申请日：2009-09-29
申请人： Claude L. Bertin , Mitchell Meinhold , Steven L. Konsek , Thomas Rueckes , Frank Guo
发明人： Claude L. Bertin , Mitchell Meinhold , Steven L. Konsek , Thomas Rueckes , Frank Guo
IPC分类号： H01L29/76
CPC分类号： G11C13/0033 , B82Y10/00 , G11C11/412 , G11C13/025 , G11C2213/17 , H01L27/0688 , H01L27/11 , H01L27/1104 , H01L27/1108 , H01L27/283 , H01L51/0048 , H01L51/0516 , H01L51/0545 , Y10S257/903 , Y10S977/762 , Y10S977/938
摘要： Hybrid carbon nanotube FET (CNFET), static ram (SRAM) and method of making same. A static ram memory cell has two cross-coupled semiconductor-type field effect transistors (FETs) and two nanotube FETs (NTFETs), each having a channel region made of at least one semiconductive nanotube, a first NTFET connected to the drain or source of the first semiconductor-type FET and the second NTFET connected to the drain or source of the second semiconductor-type FET.
摘要翻译：混合碳纳米管FET（CNFET），静态RAM（SRAM）及其制造方法。静态柱式存储单元具有两个交叉耦合半导体型场效应晶体管（FET）和两个纳米管FET（NTFET），每个具有由至少一个半导体纳米管制成的沟道区域，第一NTFET连接到漏极或源极连接到第二半导体型FET的漏极或源极的第一半导体型FET和第二NTFET。

48. 发明授权

US07839615B2 Nanotube ESD protective devices and corresponding nonvolatile and volatile nanotube switches 有权
标题翻译：纳米管ESD保护装置和相应的非易失性和挥发性纳米管开关
公开(公告)号：US07839615B2
公开(公告)日：2010-11-23
申请号：US12509993
申请日：2009-07-27
申请人： Claude L. Bertin , Brent M. Segal , Thomas Rueckes , Jonathan W. Ward
发明人： Claude L. Bertin , Brent M. Segal , Thomas Rueckes , Jonathan W. Ward
IPC分类号： H02H9/00
CPC分类号： H01L23/62 , B82Y10/00 , G11C13/025 , G11C17/16 , G11C17/165 , G11C23/00 , G11C2213/17 , H01H1/0094 , H01L23/60 , H01L27/0248 , H01L27/0251 , H01L51/0048 , H01L2224/16 , H01L2924/01019 , H01L2924/0102 , H01L2924/01025 , H01L2924/01046 , H01L2924/01066 , H01L2924/01068 , H01L2924/01077 , H01L2924/01079 , H01L2924/09701 , H01L2924/12044 , H01L2924/19103 , H01L2924/19104 , H01L2924/19105 , H01L2924/3011 , H05K1/0259 , Y10T29/49105 , Y10T29/49117 , Y10T29/49124 , Y10T29/49204
摘要： Nanotube ESD protective devices and corresponding nonvolatile and volatile nanotube switches. An electrostatic discharge (ESD) protection circuit for protecting a protected circuit is coupled to an input pad. The ESD circuit includes a nanotube switch electrically having a control. The switch is coupled to the protected circuit and to a discharge path. The nanotube switch is controllable, in response to electrical stimulation of the control, between a de-activated state and an activated state. The activated state creates a current path so that a signal on the input pad flows to the discharge path to cause the signal at the input pad to remain within a predefined operable range for the protected circuit. The nanotube switch, the input pad, and the protected circuit may be on a semiconductor chip. The nanotube switch may be on a chip carrier. The deactivated and activated states may be volatile or non-volatile depending on the embodiment. The ESD circuit may be repeatedly programmed between the activated and deactivated states so as to repeatedly activate and deactivate ESD protection of the protected circuit. The nanotube switch provides protection based on the magnitude of the signal on the input pad.
摘要翻译：纳米管ESD保护装置和相应的非易失性和挥发性纳米管开关。用于保护受保护电路的静电放电（ESD）保护电路耦合到输入焊盘。 ESD电路包括电子控制的纳米管开关。开关耦合到保护电路和放电路径。纳米管开关可以响应于控制的电刺激而被控制在去激活状态和激活状态之间。激活状态产生电流路径，使得输入焊盘上的信号流到放电路径，使输入焊盘处的信号保持在受保护电路的预定可操作范围内。纳米管开关，输入焊盘和受保护电路可以在半导体芯片上。纳米管开关可以在芯片载体上。根据实施例，去激活状态和激活状态可以是易失性的或非易失性的。可以在激活和去激活状态之间重复地编程ESD电路，以便重复激活和去激活受保护电路的ESD保护。纳米管开关基于输入焊盘上的信号幅度提供保护。

49. 发明授权

US07839176B2 Methods of making nanotube-based switching elements and logic circuits 有权
标题翻译：制作纳米管开关元件和逻辑电路的方法
公开(公告)号：US07839176B2
公开(公告)日：2010-11-23
申请号：US12476808
申请日：2009-06-02
申请人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
发明人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
IPC分类号： H03K19/20
CPC分类号： H01L29/0665 , B82Y10/00 , G11C13/025 , G11C23/00 , G11C2213/16 , G11C2213/17 , H01H1/0094 , H01H1/027 , H01H2001/0005 , H01L27/28 , H01L29/0673 , H01L29/73 , H01L29/78 , H01L51/0048 , H01L51/0508 , Y10S977/762 , Y10S977/932 , Y10S977/94 , Y10T29/49002
摘要： Nanotube-based switching elements and logic circuits. Under one embodiment of the invention, a switching element includes an input node, an output node, a nanotube channel element having at least one electrically conductive nanotube, and a control electrode. The control electrode is disposed in relation to the nanotube channel element to controllably form an electrically conductive channel between the input node and the output node. The channel at least includes said nanotube channel element. The output node is constructed and arranged so that channel formation is substantially unaffected by the electrical state of the output node. Under another embodiment of the invention, the control electrode is arranged in relation to the nanotube channel element to form said conductive channel by causing electromechanical deflection of said nanotube channel element. Under another embodiment of the invention, the output node includes an isolation structure disposed in relation to the nanotube channel element so that channel formation is substantially invariant from the state of the output node. Under another embodiment of the invention, the isolation structure includes electrodes disposed on opposite sides of the nanotube channel element and said electrodes produce substantially the same electric field. Under another embodiment of the invention, a Boolean logic circuit includes at least one input terminal and an output terminal, and a network of nanotube switching elements electrically disposed between said at least one input terminal and said output terminal. The network of nanotube switching elements effectuates a Boolean function transformation of Boolean signals on said at least one input terminal. The Boolean function transformation includes a Boolean inversion within the function, such as a NOT or NOR function.
摘要翻译：基于纳米管的开关元件和逻辑电路。在本发明的一个实施例中，开关元件包括输入节点，输出节点，具有至少一个导电纳米管的纳米管通道元件和控制电极。控制电极相对于纳米管通道元件设置，以在输入节点和输出节点之间可控制地形成导电通道。通道至少包括所述纳米管通道元件。输出节点的构造和布置使得通道形成基本上不受输出节点的电气状态的影响。在本发明的另一实施例中，控制电极相对于纳米管通道元件布置，以通过引起所述纳米管通道元件的机电偏转而形成所述导电通道。在本发明的另一个实施例中，输出节点包括相对于纳米管通道元件设置的隔离结构，使得通道形成从输出节点的状态基本上是不变的。在本发明的另一个实施例中，隔离结构包括设置在纳米管通道元件的相对侧上的电极，所述电极产生基本上相同的电场。在本发明的另一个实施例中，布尔逻辑电路包括至少一个输入端子和输出端子，以及电气地布置在所述至少一个输入端子和所述输出端子之间的纳米管开关元件网络。纳米管切换元件的网络在所述至少一个输入端上实现布尔信号的布尔函数变换。布尔函数变换包括函数内的布尔反转，如NOT或NOR函数。

50. 发明授权

US07824946B1 Isolated metal plug process for use in fabricating carbon nanotube memory cells 有权
标题翻译：用于制造碳纳米管记忆单元的隔离金属塞工艺
公开(公告)号：US07824946B1
公开(公告)日：2010-11-02
申请号：US11429069
申请日：2006-05-05
申请人： Richard J. Carter , Peter A. Burke , Verne C. Hornback , Claude L. Bertin , Thomas Rueckes
发明人： Richard J. Carter , Peter A. Burke , Verne C. Hornback , Claude L. Bertin , Thomas Rueckes
IPC分类号： H01L21/00 , H01L21/64
CPC分类号： H01H1/0094 , Y10S977/724 , Y10S977/732 , Y10S977/943
摘要： The present invention is directed to structures and methods of fabricating electromechanical memory cells having nanotube crossbar elements. Such memory cells include a substrate having transistor with a contact that electrically contacts with the transistor. A first support layer is formed over the substrate with an opening that defines a lower chamber above the electrical contact. A nanotube crossbar element is arranged to span the lower chamber. A second support layer is formed with an opening that defines a top chamber above the lower chamber, the top chamber including an extension region that extends beyond an edge of the lower chamber to expose a portion of the top surface of the first support layer. A roof layer covers the top of the top chamber and includes an aperture that exposes a portion of the extension region of the top chamber and includes a plug that extends into the aperture in the roof layer to seal the top and bottom chambers. The memory cell further includes an electrode that overlies the crossbar element such that electrical signals can activate the electrode to attract or repel the crossbar element to set a memory state for the transistor.
摘要翻译：本发明涉及制造具有纳米管横杆元件的机电存储器单元的结构和方法。这种存储单元包括具有与晶体管电接触的接触的晶体管的衬底。第一支撑层形成在衬底上，其开口限定了电触点上方的下腔室。纳米管横杆元件布置成跨越下室。第二支撑层形成有开口，所述开口限定在所述下腔室上方的顶部腔室，所述顶部腔室包括延伸超出所述下部腔室的边缘以暴露所述第一支撑层的顶部表面的一部分的延伸区域。屋顶层覆盖顶部室的顶部，并且包括露出顶部室的延伸区域的一部分并且包括延伸到顶部层中的孔中以密封顶部和底部室的插塞的孔。存储单元还包括覆盖在横杆元件上的电极，使得电信号可以激活电极以吸引或排斥交叉开关元件以设置晶体管的存储状态。

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